Patents
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
06/2010
06/29/2010US7745074 Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method
06/29/2010US7745073 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same
06/29/2010US7745072 Forming shielding patterns on the transparent substrate to form a photomask; detecting critical dimension (CD) error region of the shielding patterns; forming a correction film to vary th2 intensity ofthe incident light in the CD error region to correct CDs of circuit patterns formed by the shieldi
06/29/2010US7745071 Synthetic quartz glass substrate for large-sized photomask; diagonal length= > 500 mm, flatness/diagonal length ratio = < 6.0x10-6,(no prior art); highparallelness,high flatness; dimensional stability; enhancedexposure accuracy, particularly register/resolution; liquid crystalstransistors (TFT)
06/29/2010US7745070 Structure of a lithography mask
06/29/2010US7745069 A single machine methodology for photomasks having regionsthat repeat and do not repeat; placing copies of clear and opaqueregions within the clear bar regions of a photomask disposed withinan opaque frame surrounding the cell region; copies' clear andopaque regions compared to the corresponding ones
06/29/2010US7745068 Improved resolution; a transmission-prevention pattern formed on substrate defining a circuit pattern; compensation layer configured to change light transmitted through the binaryphotomask based on the topology of the compensation layer; arranged on the transmission-prevention layer and/or substrate
06/29/2010US7745067 virtual features need not actually be patterned onto the mask or the substrate, however, can have SRAFs (sub-resolution assist feature) patterned thereon to allow the designer to account for and cope with forbidden pitch problems, thereby allowing accurate patterning of contact holes on the surbstrate
06/24/2010WO2010071086A1 Low expansion glass substrate for reflection type mask and method for processing same
06/24/2010WO2010071005A1 Method for cleaning object and system for cleaning object
06/24/2010WO2010070988A1 Method for forming projected pattern, exposure apparatus and photomask
06/24/2010US20100159709 Mask pattern correcting method, mask pattern inspecting method, photo mask manufacturing method, and semiconductor device manufacturing method
06/24/2010US20100159701 Exposure mask and method for manufacturing semiconductor device using the same
06/24/2010US20100159696 Microlens mask of image sensor and method for forming microlens using the same
06/24/2010US20100159690 Method of manufacturing semiconductor device that uses both a normal photomask and a phase shift mask for defining interconnect patterns
06/24/2010US20100159371 Pigment dispersion solution, pigment photoresist and color filter
06/24/2010US20100159370 Method for forming microscopic structures on a substrate
06/24/2010US20100159369 Phase shift mask and method for manufacturing the same, and method for manufacturing integrated circuit
06/24/2010US20100159368 Optically semitransmissive film, photomask blank and photomask, and method for designing optically semitransmissive film
06/24/2010US20100159367 A half tone mask having multi-half permeation part and a method of manufacturing the same
06/24/2010US20100159227 Synthetic quartz glass body, process for producing the same, optical element, and optical apparatus
06/24/2010US20100157046 Method and apparatus for analyzing a group of photolithographic masks
06/24/2010US20100154521 Determining a Repairing Form of a Defect at or Close to an Edge of a Substrate of a Photo Mask
06/23/2010CN1722366B Method for manufacturing semiconductor device
06/23/2010CN101752305A Semiconductor apparatus and method of manufacturing the same
06/23/2010CN101751502A Method and system for correcting window maximized optic proximity effect in photoetching process
06/23/2010CN101750902A Atomization effect compensation method of exposure conditions of diverse electron beams and exposure method thereof
06/23/2010CN101750899A Lithography layout and method for measuring lithography deformation thereof
06/23/2010CN101750882A Method for determining manufacturability of lithographic mask
06/23/2010CN101750881A Method and system for determining manufacturability of lithographic mask
06/23/2010CN101750880A Method and system for determining manufacturability of lithographic mask
06/23/2010CN101750879A Exposure mask and method for manufacturing semiconductor device using the same
06/23/2010CN101750878A Optical proximity correction method
06/23/2010CN101750877A Method of determining graphic outer contour for optical proximity correction
06/23/2010CN101750876A Optical proximity correction method
06/23/2010CN101750875A Method for monitoring photoetching quality
06/23/2010CN101750874A Extreme ultraviolet photomask and methods and apparatuses for manufacturing the extreme ultraviolet photomask
06/23/2010CN101750873A Phase shifting mask
06/23/2010CN101750872A Mask cassette
06/23/2010CN101750871A Masking film with exposure compensation for probe manufacturing
06/23/2010CN101249937B Method for processing micron/submicron sized block sample
06/23/2010CN101241517B Method, device and system for a pattern layout split
06/22/2010US7742162 Mask defect inspection data generating method, mask defect inspection method and mask production method
06/22/2010US7742131 Touch panel, color filter substrate and fabricating method thereof
06/22/2010US7741016 Method for fabricating semiconductor device and exposure mask
06/22/2010US7740994 Method for selecting photomask substrate, method for manufacturing photomask, and method for manufacturing semiconductor device
06/22/2010US7740992 detecting a distance between the exposure mask and the object to be exposed, before the exposure, and controlling the distance between the exposure mask and the object to be exposed, to control the amount of flexure of the exposure mask; lithographic exposure based on near-field light
06/17/2010US20100153905 Pattern layout designing method, semiconductor device manufacturing method, and computer program product
06/17/2010US20100153901 Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask
06/17/2010US20100151644 Semiconductor device and method for manufacturing the same
06/17/2010US20100151364 Method for identifying and using process window signature patterns for lithography process control
06/17/2010US20100149535 Method of measuring numerical aperture of exposure machine, control wafer, photomask, and method of monitoring numerical aperture of exposure machine
06/17/2010US20100149503 Method of structuring a photosensitive material
06/17/2010US20100148235 Semiconductor integrated circuit, standard cell, standard cell library, semiconductor integrated circuit designing method, and semiconductor integrated circuit designing equipment
06/17/2010DE102009004305A1 Verfahren zur Herstellung von plattenförmigen Körpern mit mikro- und/oder nanostrukturierten Oberflächen oder von mikro- und/oder nanogroß durchbrochenen Folien Process for the preparation of plate-shaped bodies with micro- and / or nano-structured surfaces or micro- and / or nano large perforated sheets
06/17/2010DE102006022722B4 Verfahren und Vorrichtung zur Oberflächenstrukturierung eines Pressbleches oder eines Endlosbandes Method and device for structuring the surface of a press plate or an endless belt
06/16/2010CN201508458U Bearing bar of photomask bearing rack
06/16/2010CN1800985B Method for correcting mask pattern, photomask, semiconductor device, and method for fabricating the same
06/16/2010CN101740325A Cleaning device for semiconductor base material
06/16/2010CN101738874A Method for simulating photoresist development
06/16/2010CN101738851A Method of manufacturing photomask, lithography apparatus, method and apparatus for inspecting photomask
06/16/2010CN101738850A Method for collecting optical proximity corrected parameters
06/16/2010CN101738849A Method for amending mark layout graph
06/16/2010CN101738848A Method for establishing OPC model based on variable light acid diffusion length
06/16/2010CN101738847A Method of manufacturing photomask and pattren transfer method using the smae
06/16/2010CN101738846A Mask plate and manufacture method thereof
06/16/2010CN101738845A Mask and design method thereof
06/16/2010CN101738844A Shadow type photomask structure and manufacturing method thereof
06/16/2010CN101211106B Sensitive light shield
06/16/2010CN101063808B Method of forming a mask layout and layout formed by the same
06/16/2010CN101047090B Image correction device and coating unit thereof
06/15/2010US7739651 Method and apparatus to determine if a pattern is robustly manufacturable
06/15/2010US7739649 Design and layout of phase shifting photolithographic masks
06/15/2010US7737040 Method of reducing critical dimension bias during fabrication of a semiconductor device
06/15/2010US7736844 photoresists; photomasks; photolithography; vapor deposition; semiconductors
06/15/2010US7736839 employing linearly polarized illumination to perform exposure along a mask pattern including mask patterns used to form the first and second wiring patterns, subsequently forming the first and second wiring patterns (different in geometry) having a geometry along the mask patterns
06/15/2010US7736824 photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition
06/15/2010US7736823 Method and system for providing optical proximity correction for structures such as a PMR nose
06/15/2010US7736821 A substrate with a conductive film to be used for production of a reflective mask blank for EUV lithography, characterized in that the chief material of the conductive film is at least one member selected from the group consisting of Cr, Ti, Zr, Nb, Ni and V, and the conductive film contains B (boron)
06/15/2010US7736820 An extreme ultraviolet mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, covered by a patterned absorber layer; antireflection effect of absorber layer is a function of the aperture sizes in the pattern; enlarging a ratio of desired and undesired radiation; lithography
06/15/2010US7736819 shading elements attenuate light passing through the regions, so as to compensate for the critical dimensio (CD) variations on the wafer and hence provide and improved CD tolerance wafer; computer program uses a reference calibration list to determine the parameters of the shading elements
06/10/2010WO2010065094A2 Flexographic element and method of imaging
06/10/2010WO2010063418A1 Method and device for measuring the relative local position error of one of the sections of an object that is exposed section by section
06/10/2010US20100143850 Method of Manufacturing a Semiconductor Device
06/10/2010US20100143831 Photomask blank and photomask
06/10/2010US20100143830 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process
06/10/2010US20100143829 Use of soft adhesive to attach pellicle to reticle
06/10/2010US20100143828 Method of mask forming and method of three-dimensional microfabrication
06/10/2010DE102009053586A1 Photomaskenrohling, Herstellungsverfahren für Photomaskenrohling und Herstellungsverfahren für Photomaske Photomask blank, method of making photographic mask blank and method of making photographic mask
06/10/2010DE102008060293A1 Verfahren und Vorrichtung zur Messung des relativen lokalen Lagefehlers eines der Abschnitte eines abschnittsweise belichteten Objektes Method and device for measuring the relative local position error of the portions of a partially exposed object
06/09/2010EP1412817B1 Damascene extreme ultraviolet lithography (euvl) photomask and method of making
06/09/2010CN201503858U Maskplate replacing device
06/09/2010CN1902501B Method and apparatus for calibrating a metrology tool
06/09/2010CN1892418B Method for verifying phase-shift angle of phase-shift photomask, photoengraving technology and phase-shift photomask
06/09/2010CN1800991B Scanning exposure method and scanning exposure apparatus manufacture method
06/09/2010CN1781826B Reticle-carrying container
06/09/2010CN1519955B Thin film transistor array panel, its manufacture method and mask for such panel
06/09/2010CN101728332A Method of forming patterns for semiconductor device
06/09/2010CN101728295A Gas filling bearing piece, gas filling bearing piece set and gas filling equipment
06/09/2010CN101728278A Method for manufacturing semiconductor device
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