Patents
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
12/2010
12/02/2010US20100300623 Plasma etching apparatus
12/02/2010DE102010017089A1 Lithographiemasken, -systeme und Herstellungsverfahren Lithography masks, systems and manufacturing processes
12/01/2010EP2256789A1 Reflective mask blank for euv lithography
12/01/2010EP2256554A2 Multicolored mask process for making display circuitry
12/01/2010EP2256552A1 Negative resist composition and patterning process using the same
12/01/2010CN1983026B Polymer for hardmask of semiconductor device and composition containing the same
12/01/2010CN1808267B Mask, manufacturing method and application thereof
12/01/2010CN1758138B Multi-exposure semiconductor fabrication mask sets and methods of fabricating such multi-exposure mask sets
12/01/2010CN1749853B Transparent substrate for mask blank and mask blank
12/01/2010CN101900939A Negative resist composition and patterning process using the same
12/01/2010CN101900934A Method for correcting end terminal by polygonal optical approximation
12/01/2010CN101900933A Base plate based on mask plate exposure process and aligning method thereof
12/01/2010CN101900932A Multi-gradation photomask and method of manufacturing the same, and pattern transfer method
12/01/2010CN101898276A 激光照射装置 Laser irradiation apparatus
12/01/2010CN101393386B Reticle mask making method by FPD mask making equipment
12/01/2010CN101154031B Method of forming hardmask pattern of semiconductor device
11/2010
11/30/2010US7844940 Mask set for microarray, method of fabricating mask set, and method of fabricating microarray using mask set
11/30/2010US7844939 Mask pattern correction program and system
11/30/2010US7844934 Method for designing a semiconductor integrated circuit layout capable of reducing the processing time for optical proximity effect correction
11/30/2010US7843552 Lithographic apparatus, device manufacturing method, and mask having a pellicle attached hereto
11/30/2010US7842525 Method and apparatus for personalization of semiconductor
11/30/2010US7842451 Method of forming pattern
11/30/2010US7842439 Calibration of optical line shortening measurements
11/30/2010US7842438 masks comprise lower mirror covering substrate, and two types of reflecting zones Z1 and Z2 in order to form phase shift mask; an etch stop layer is interposed between lower mirror and an upper reflective structure, this layer having a thickness such that it behaves like a reflective resonant cavity
11/30/2010US7842436 for semiconductor integrated circuits; improved contrast; forming a small pattern under the same exposure conditions without depending on the shape and the density of the pattern
11/30/2010CA2549625C Flow nozzle assembly
11/25/2010WO2010134779A2 Half tone mask having multi half permeation part and manufacturing method of the same
11/25/2010WO2010134774A2 Half tone mask and manufacturing method of the same
11/25/2010WO2010134449A1 Method for producing tio2-sio2 glass body, method for heat-treating tio2-sio2 glass body, tio2-sio2 glass body, and optical base for euvl
11/25/2010US20100297542 Sulphonium salt initiators
11/25/2010US20100297541 Sulphonium salt initiators
11/25/2010US20100297540 Sulphonium salt initiators
11/25/2010US20100297539 Antireflective hard mask compositions
11/25/2010US20100297538 Holographic Reticle and Patterning Method
11/25/2010US20100297362 Method for processing an object with miniaturized structures
11/25/2010US20100296069 Pattern division method, pattern division processing apparatus and information storage medium on which is stored a program
11/25/2010US20100294651 Process for producing gray tone mask
11/24/2010CN201654450U Metal mask applied to SMT
11/24/2010CN201654449U Photolithography mask cleaning frame
11/24/2010CN201654448U Mask storage clean device
11/24/2010CN1512273B Mask box and method for transport light etched mask in box and scanning mask in box
11/24/2010CN101894756A Groove formation method, metal wire formation method, photoetching method and equipment
11/24/2010CN101893821A Method for optical proximity correction of database
11/24/2010CN101893820A Method of optical proximity correction
11/24/2010CN101893819A Method for improving graphics critical dimension uniformity in mask
11/24/2010CN101893818A Method for repairing anti-reflection layer damage of binary mask
11/24/2010CN101268349B System and method for automatically mounting a pellicle assembly on a photomask
11/24/2010CN101221902B Mask used for continuous side direction crystal growing technology and laser crystallization method
11/23/2010US7840057 Simultaneous computation of multiple points on one or multiple cut lines
11/23/2010US7838209 forming a design on a semiconductor devices, integrated circuits; at least two irradiation steps; second irradiation step are defocused compared to the first irradiation
11/23/2010US7838208 forming multi-component patterns via defining regions of localized magnetic field maxima and minima on a substrate; lithographic applications; use in electronics, photonics, genome analysis, drug discovery, and cellular systems
11/23/2010US7838204 forming a large mask with a random pattern of transmissive apertures, by illuminating the mask with light to selectively photopolymerize the layer of photopolymerizable material containing ethoxylated (6) trimethylolpropane triacrylate
11/23/2010US7838203 alters the cross sectional shape of the floating gate to enable the deposition of a thicker oxide layer at the edge of the floating gate; reduced charge leakage from the floating gate and increased retention reliability of the memory cell; cost efficiency
11/23/2010US7838183 Multi-layer, attenuated phase-shifting mask
11/23/2010US7838182 thin film of forming a mask pattern is deposited on a substrate, an atmosphere from which an acid substance inhibiting a chemical amplification effect of a chemically amplified resist is removed is supplied into an environment for forming the resist film, thus chemically amplified resist film is formed
11/23/2010US7838181 Photo mask and method for manufacturing semiconductor device using the same
11/23/2010US7838180 Patterning thin film by dry etching using oxygen-free etching gas containing chlorine compound; exterior protective coating
11/23/2010US7838179 Forming first resist patterns over a transparent substrate on which a light blocking layer is formed, measuring line widths of the first resist patterns to define a defective pattern region having a line width larger than a desired critical dimension
11/23/2010US7838178 Masks for microlithography and methods of making and using such masks
11/23/2010US7838177 Photolithography using extreme ultraviolet radiation especially light having wavelength in a soft X-ray region, a reflection type photomask and a reflection type photomask blank
11/23/2010US7838176 Substrate, a frame pattern along a contour of a target pattern transcribed to a wafer, a first pattern arranged in an aperture orientation of an illuminating system and a second pattern arranged perpendicularly to the aperture orientation a third pattern in an inner region of the frame pattern
11/23/2010US7838175 a wafer lithographic mask and an multi-project wafer (MPW) reticle being disposed on a light transmission path from a lithographic light source to a photoresist coated wafer, so as to prevent some undesired chips from being fabricated on the wafer using the MPW reticle, and decreasing the cost
11/23/2010US7838174 Method of fabricating grayscale mask using smart cut® wafer bonding process
11/23/2010US7838173 Structure design and fabrication on photomask for contact hole manufacturing process window enhancement
11/23/2010CA2387427C Composite relief image printing elements
11/23/2010CA2387424C Uv-absorbing support layers and flexographic printing elements comprising same
11/18/2010WO2010131662A1 Method for producing tio2-sio2 glass body, method for heat-treating tio2-sio2 glass body, tio2-sio2 glass body, and optical base for euvl
11/18/2010WO2010131632A1 Liquid crystal polymer compound and photomask for use in lithography
11/18/2010WO2010131414A1 Purging apparatus and purging method
11/18/2010WO2010098352A9 Process for producing porous quartz glass object, and optical member for euv lithography
11/18/2010US20100291478 Etching method and photomask blank processing method
11/18/2010US20100291477 Pattern forming method, pattern designing method, and mask set
11/18/2010US20100291476 Patterning A Single Integrated Circuit Layer Using Automatically-Generated Masks And Multiple Masking Layers
11/18/2010US20100291475 Silicone Coating Compositions
11/18/2010US20100290737 Optical wavelength division multiplexed multiplexer/demultiplexer for an optical printed circuit board and a method of manufacturing the same
11/18/2010US20100290023 Method for detecting substrate position of charged particle beam photolithography apparatus and charged particle beam photolithography apparatus
11/17/2010EP2251741A2 Etching method and photomask blank processing method
11/17/2010CN101887846A Process for producing pellicle
11/17/2010CN101887215A Mask system employing substantially circular optical proximity correction target and method of manufacture thereof
11/17/2010CN101887214A Method for preparing fine metal mask bushing by wet etching
11/17/2010CN101266402B Mask pattern and its forming method
11/16/2010US7835565 System and method of providing mask defect printability analysis
11/16/2010US7833682 Formation of a diffusion layer between a protective layer and a silicon layer as the outermost layer of a reflective multilayer film during Extreme ultraviolet (EUV) exposure can be suppressed by using an amorphous, solid-solution film of ruthenium and boron and/or zirconium; semiconductors
11/16/2010US7833681 thin films that form masking patterns, formed on substrates and a chemically amplified photoresist film, having a protective film that prevents movement of substances that inhibits chemical amplification of the photoresist films
11/16/2010US7833598 Splittable sheet structure
11/16/2010US7833387 Thin film patterning; metal film is formed on side wall of sputtering target to prevent bonding agent from being exposed
11/16/2010US7833000 Optical modeling apparatus
11/11/2010US20100283052 Metrology Systems and Methods for Lithography Processes
11/11/2010DE102008043324B4 Optische Anordnung zur dreidimensionalen Strukturierung einer Materialschicht Optical arrangement for three-dimensional structure of a material layer
11/10/2010EP1446813B1 Reflective x-ray microscope for examining objects with wavelengths of = 100nm in reflection
11/10/2010CN101881924A Mask design method
11/10/2010CN101458444B Method for producing photo mask and graphic method
11/10/2010CN101393387B Mask and method for manufacturing same
11/10/2010CN101295130B Light shield detecting method
11/10/2010CN101204851B Optical modeling apparatus
11/10/2010CN101162363B Alternating phase shift mask inspection method and system
11/10/2010CN101013173B Chromatic color filter base plate and mask plate for its production and formed organic electroluminescent component
11/09/2010US7831939 Semiconductor integrated circuit device featuring processed minimum circuit pattern, and design method therefor
11/09/2010US7831085 Method of manufacturing photo mask, mask pattern shape evaluation apparatus, method of judging photo mask defect corrected portion, photo mask defect corrected portion judgment apparatus, and method of manufacturing a semiconductor device
11/09/2010US7830497 System and method for using a two part cover and a box for protecting a reticle
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