Patents
Sitemap › G03 - Photography; Cinematography; Analogous techniques using waves other than optical waves; Electrography; Holography › G03F - Photomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices; Materials therefor; Originals therefor; Apparatus specially adapted therefor › G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
10/2010
10/14/2010US20100258820 Manufacturing method for contact pads of a thin film transistor array panel, and a thin film transistor array panel having such contact pads
10/13/2010EP2238622A1 Three-dimensional hexagonal matrix memory array and method of manufacturing the same
10/13/2010CN201607608U 防静电光罩 Anti-static mask
10/13/2010CN101856805A Method for producing large-size synthetic quartz glass substrate
10/13/2010CN101596694B Masking film chamfering edge edger and machining process thereof
10/13/2010CN101192252B Method and apparatus for designing mask
10/12/2010US7812972 Reticle, apparatus for monitoring optical system, method for monitoring optical system, and method for manufacturing reticle
10/12/2010US7811746 photolithography methods for exposing semiconductor substrates; enhancing lithographic printing image resolution, reducing mask error factor and line edge roughness
10/12/2010US7811743 rubbing to remove the surface protective layer and exposing a photosensitive layer containing a sensitizing dye, a polymerization initiator, a polymerizable dipentaerythritol pentaacrylate compound and a hydrophobic methacrylic copolymer binder, and hardening; hydrophilic or highly water-permeable
10/12/2010US7811723 Phase-shift mask and method for forming a pattern
10/12/2010US7811722 Photomask and method for fabricating the same
10/12/2010US7811721 Mask for crystallizing silicon, apparatus having the mask and method of crystallizing with the mask
10/12/2010US7811720 Orthogonal corners produced in a semiconductor device pattern to include one edge defined by a first mask and an orthogonal edge defined by a second mask; alleviate proximity effects
10/07/2010WO2010115027A1 Methods of patterning substrates using microcontact printed polymer resists and articles prepared therefrom
10/07/2010WO2010114117A1 Method and device for creating composite image
10/07/2010WO2010114085A1 Member for masking film, process for producing masking film using same, and process for producing photosensitive resin printing plate
10/07/2010WO2010113787A1 Mask blank and method for manufacturing transfer mask
10/07/2010WO2010113700A1 Reflective photomask and reflective photomask blank
10/07/2010WO2010113475A1 Mask blank and transfer mask
10/07/2010WO2010113474A1 Mask blank and transfer mask
10/07/2010US20100255761 Method for producing large-size synthetic quartz glass substrate
10/07/2010US20100255423 Pattern forming method, semiconductor device manufacturing method and phase shift photomask having dummy gate patterns
10/07/2010US20100255412 Photo-imaging Hardmask with Negative Tone for Microphotolithography
10/07/2010US20100255411 Mask blank and method of manufacturing an imprint mold
10/07/2010US20100255410 Alkali-type nonionic surfactant composition
10/07/2010US20100255409 Attenuated phase-shift photomasks, method of fabricating the same and method of fabricating semiconductor using the same
10/07/2010US20100254591 Verification method for repairs on photolithography masks
10/07/2010US20100253938 Optical inspection method and optical inspection apparatus
10/07/2010DE112007002735B4 EUV-Pellikel mit erhöhter EUV-Lichtdurchlässigkeit EUV pellicle with increased EUV light transmittance
10/07/2010DE102009005972A1 Creating a periodic pattern on or in a processing substrate, comprises exposing the processing substrate to an interfering radiation field, which forms itself in a space area by interacting partial fields of different diffraction orders
10/06/2010EP2237109A2 Method for inspecting and judging photomask blank or intermediate thereof
10/06/2010EP2237108A2 Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photmask blank
10/06/2010EP2237107A2 Photomask blank and photomask
10/06/2010EP2236246A1 Method for producing large-size synthetic quartz glass substrate
10/06/2010EP1402316B1 Mask repair with electron beam-induced chemical etching
10/06/2010CN201600550U 一种掩膜装置 One kind of mask device
10/06/2010CN1808268B Metal hard mask method and structure for strained silicon MOS transistor
10/06/2010CN1808266B Optical mask and manufacturing method of thin film transistor array panel using the optical mask
10/06/2010CN1731278B EUV magnetic contrast lithography mask and manufacture thereof
10/06/2010CN1669121B Transfer mask for exposure and pattern exchanging method of the same
10/06/2010CN101852984A Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photomask blank
10/06/2010CN101852983A Method for inspecting and judging photomask blank or intermediate thereof
10/05/2010US7810066 Irradiation pattern data generation method, mask fabrication method, and plotting system
10/05/2010US7809181 Pattern inspection apparatus, image alignment method, displacement amount estimation method, and computer-readable recording medium with program recorded thereon
10/05/2010US7807343 Using alternating phase-shift implementation in lithography; electronic design automation (EDA); computer readable medium
10/05/2010US7807342 transparent support glass with light attenuators, ultraviolet light exposure of photoresist layer is effectuated in predetermined patterns through exposure photomask having light-transmissive openings
10/05/2010US7807339 depositing pattern target layer on surface of substrate, providing printing plate with concaves in side of transparent substrate and opaque layer on side except in concaves, filling photresists therein, positioning substrate, transferring resists onto pattern target layer exposing rear surface to harden
10/05/2010US7807322 comprises mask substrate divided into first and second regions equally arranged to upper and lower sides on different sides, respectively, first mask pattern formed on first region of mask substrate,and second mask pattern formed on second region of mask substrate; minimizes yield reduction, cycle time
10/05/2010US7807321 and optical density; Black matrix for color filter in a liquid crystal display; cured coating containing a modified carbon black pigment having attached nonpolymer organic group; sulfanilic acid and aminobenzoic acid are modifiers
10/05/2010US7807319 Photomask including contrast enhancement layer and method of making same
10/05/2010US7807318 Reflective photomask and method of fabricating the same
09/2010
09/30/2010WO2010110237A1 Substrate provided with multilayer reflection film for reflective mask, reflective mask blank, and methods for manufacturing the substrate and the mask blank
09/30/2010WO2010110139A1 Manufacturing method for substrate for mask blank, mask blank, photo mask, and semiconductor device
09/30/2010US20100248493 Photomask blank, processing method, and etching method
09/30/2010US20100248095 Colored curable composition for color filter, color filter and method for producing the same, and solid state imaging device
09/30/2010US20100248094 Methods Of Forming And Using Reticles
09/30/2010US20100248093 Reticle Constructions
09/30/2010US20100248092 Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method
09/30/2010US20100248091 Method for inspecting photomask blank or intermediate thereof, method for determining dosage of high-energy radiation, and method for manufacturing photomask blank
09/30/2010US20100248090 Photomask blank and photomask
09/30/2010US20100248089 Method for optical proximity correction
09/30/2010US20100247813 Injection molded product and manufacturing method thereof
09/30/2010US20100247085 Automatic focus adjusting mechanism and optical image acquisition apparatus
09/30/2010US20100246978 Data verification method, data verification device, and data verification program
09/30/2010US20100246932 Method for inspecting and judging photomask blank or intermediate thereof
09/29/2010EP2233975A2 Photomask blank, processing method, and etching method
09/29/2010EP2233974A2 Apparatus and method of inspecting mask
09/29/2010CN1987643B The photo mask and method of fabricating the array substrate for liquid crystal display device using the same
09/29/2010CN101846888A Exposure machine, array substrate, patterned film, photoresist layer and formation method
09/29/2010CN101846886A Delta TCC (transmission cross coefficient) for high-speed sensibility model calculation
09/29/2010CN101846878A Large-size film master mask design and combination method thereof
09/29/2010CN101846877A Method for manufacturing transparent substrate for mask blank, method for manufacturing mask blank, and method for manufacturing mask
09/29/2010CN101846876A Photomask blank, processing method, and etching method
09/29/2010CN101846875A Gray-scale photomask for defining patterns of source electrode, drain electrode and semiconductor layer of TFT
09/29/2010CN101846874A X-ray photolithographic mask with through hole
09/29/2010CN101625528B Mask clamp
09/29/2010CN101458454B Method for simultaneously monitoring photolithography exposure condition and registration photoetching precision
09/29/2010CN101452204B Weighting type distance-measuring optical approximate correcting method
09/29/2010CN101281359B Method for manufacturing attenuation type phase displacement light shield
09/29/2010CN101246306B Optical proximity amending method
09/29/2010CN101046634B Method for etching quartz on photomask plasma
09/29/2010CN101021680B Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device
09/28/2010US7804648 Multilayer reflective film coated substrate, manufacturing method thereof, reflective mask blank, and reflective mask
09/28/2010US7803517 to align the contact hole with a lower pattern; photolithography
09/28/2010US7803505 Method of fabricating a mask for a semiconductor device
09/28/2010US7803504 assistance pattern is disposed on at least one of an end portion and a middle portion of each of the main patterns and has a line width greater than that of the main pattern
09/28/2010US7803503 Includes translucent film patterns for forming a middle gradation area and light blocking film patterns disposed to an entire periphery of the translucent film patterns
09/28/2010US7803502 Photomask and method of manufacturing semiconductor device using the photomask
09/28/2010US7803501 photoresists; liquid crystal display panels
09/28/2010US7803500 Photomask, photomask fabrication method, and semiconductor device fabrication method
09/23/2010US20100241261 Pattern generating method, method of manufacturing semiconductor device, and computer program product
09/23/2010US20100240211 Semiconductor device, method of manufacturing the same, and phase shift mask
09/23/2010US20100240192 Alignment mark, method of manufacturing semiconductor device, and mask set
09/23/2010US20100239964 Test Structures and Methods
09/23/2010US20100239963 Exposure mask, exposure method, and method of manufacturing optical element
09/23/2010US20100239833 Elastomeric mask and use in fabrication of devices
09/23/2010US20100237469 Photomask, semiconductor device, and charged beam writing apparatus
09/23/2010US20100237256 Charged particle beam writing method, method for detecting position of reference mark for charged particle beam writing, and charged particle beam writing apparatus
09/23/2010DE102005048107B4 Verfahren zum Bestimmen einer optimalen Absorber-Schichtenstapelgeometrie für eine lithographische Reflexionsmaske A method for determining an optimum absorber layer stack geometry for a lithographic reflection mask
09/22/2010EP2229346A1 Optical member for euvl and surface treatment method thereof
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