| Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849) |
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| 05/25/2000 | WO2000019272B1 Methods of reducing proximity effects in lithographic processes |
| 05/24/2000 | EP1003078A2 Replicating a nanoscale pattern |
| 05/24/2000 | CN1254180A Method for correcting photo-adjacency effect in course of production of semiconductor device |
| 05/23/2000 | US6067375 Correction method and correction apparatus of mask pattern |
| 05/23/2000 | US6066418 Provide an x-ray mask having oxidation resistance comprising an x-ray transmissive film and an x-ray absorber selectively formed on the film and being formed entirely of an oxide of tantalum, tungsten and/or rhenium or nitride |
| 05/23/2000 | US6066180 Automatic generation of phase shift masks using net coloring |
| 05/18/2000 | WO2000028380A1 Exposure method and exposure apparatus |
| 05/18/2000 | WO1999049346A8 High na system for multiple mode imaging |
| 05/17/2000 | EP1001311A1 Patterning device |
| 05/17/2000 | EP1000371A2 Ultra-broadband uv microscope imaging system with wide range zoom capability |
| 05/16/2000 | US6064517 High NA system for multiple mode imaging |
| 05/16/2000 | US6064485 Method of optical proximity correction |
| 05/16/2000 | US6064477 Method of and apparatus for inspecting reticle for defects |
| 05/16/2000 | US6064466 Planarization method and system using variable exposure |
| 05/16/2000 | US6063546 Parts of the plate having different screen densities are exposed in a single exposure using mask having opaque and nonopaque areas which have corresponding first and second optical densities; exposure to ultraviolet light |
| 05/16/2000 | US6063246 Membrane is used in ion projection lithography, by itself or as part of a lithography stencil mask |
| 05/16/2000 | US6063208 Reticle cleaning without damaging pellicle |
| 05/10/2000 | EP0999472A2 Method and apparatus for dry-etching half-tone phase-shift films, half-tone phase-shift photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereof |
| 05/10/2000 | EP0999440A1 System and method for inspecting matter |
| 05/09/2000 | US6060716 Electron beam lithography method |
| 05/09/2000 | US6060368 Mask pattern correction method |
| 05/04/2000 | WO2000025351A1 Method and device for producing mask |
| 05/04/2000 | WO2000025181A1 Method for fabricating semiconductor device and method for forming mask suitable therefor |
| 05/03/2000 | EP0997781A1 Exposure method |
| 05/03/2000 | EP0997779A1 Exposure method and x-ray mask structure for use with the same |
| 05/03/2000 | EP0996547A2 The production of microstructures for use in assays |
| 05/03/2000 | CN1252135A Highly transparent, color-pigmented high molecular weight material |
| 05/02/2000 | US6058203 Correction method and correction apparatus of mask pattern |
| 05/02/2000 | US6057249 Method for improving optical proximity effect in storage node pattern |
| 05/02/2000 | US6057066 Method of producing photo mask |
| 05/02/2000 | US6057065 Lithographic system having diffraction grating and attenuated phase shifters |
| 05/02/2000 | US6057064 Double-alternating phase-shifting mask |
| 05/02/2000 | US6057063 Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith |
| 05/02/2000 | US6056785 Electron-beam data generating apparatus |
| 04/26/2000 | EP0995148A1 Method for producing active or passive components on a polymer basis for integrated optical devices |
| 04/25/2000 | US6055040 Pellicle frame |
| 04/20/2000 | DE19949478A1 Imaging element, e.g. silver halide photographic material, has electroconductive layer of sulfonated film-forming polyurethane binder and electroconductive polymer |
| 04/20/2000 | DE19946447A1 Particle-optical imaging system for lithographical purposes has lens arrangement with ring pre-electrode facing mask holder to form grid lens having negative refractive index with mask foil |
| 04/20/2000 | DE19942484A1 Inspection procedure for exposure of pattern data, involves computing error corresponding to predicted value of pattern width |
| 04/19/2000 | EP0993963A1 Plastic film continuous printing process, apparatus therefore and plastic film printed by the same |
| 04/19/2000 | EP0993627A2 Device for transferring structures |
| 04/19/2000 | EP0993490A1 Method for producing fine pigment dispersions |
| 04/19/2000 | EP0993489A1 Pigment dispersions containing c.i. pigment red 222 |
| 04/18/2000 | US6052478 Automated photomask inspection apparatus |
| 04/18/2000 | US6052238 Near-field scanning optical microscope having a sub-wavelength aperture array for enhanced light transmission |
| 04/18/2000 | US6051346 Process for fabricating a lithographic mask |
| 04/18/2000 | US6051345 Damage to the transparent substrate due to etching is prevented. phase errors caused by defective regions in the phase shifting mask can be removed, easily resulting in the formation of a defect-free mask. |
| 04/18/2000 | US6051344 Very small size patterns can be created even though a larger pattern starting reticle is used. |
| 04/13/2000 | WO2000020928A1 Photomask for projection lithography at or below about 160 nm and a method |
| 04/13/2000 | DE19846529A1 Photopolymerisierbare Druckformen zur Herstellung von Reliefdruckplatten für den Druck mit UV-härtbaren Druckfarben Photopolymerizable printing plates for the production of relief printing plates for printing with UV-curable printing inks |
| 04/12/2000 | EP0992849A1 Photopolymerizable printing forms for the production of relief printing plates suitable for printing with UV-curable printing inks |
| 04/12/2000 | EP0992846A1 Use of an ink jet image as prepress intermediate |
| 04/12/2000 | EP0991982A1 Transferring a programmable pattern by photon lithography |
| 04/12/2000 | EP0886806B1 2-substituted malondialdehyde compounds as co-developers for black-and-white photothermographic and thermographic elements |
| 04/11/2000 | US6048671 Ultra-fine microfabrication method using an energy beam |
| 04/11/2000 | US6048652 Backside polish EUV mask and method of manufacture |
| 04/11/2000 | US6048651 Photomasking |
| 04/11/2000 | US6048650 Half tone phase shift mask comprising second pattern layer on backside of substrate |
| 04/11/2000 | US6048649 Programmed defect mask with defects smaller than 0.1 μm |
| 04/11/2000 | US6048648 Mask including optical shield layer having variable light transmittance |
| 04/11/2000 | US6048647 Masking of attenuation type and semitransparent filns |
| 04/06/2000 | WO2000019272A1 Methods of reducing proximity effects in lithographic processes |
| 04/06/2000 | WO2000019271A1 Photomask and exposure method |
| 04/06/2000 | WO2000019247A2 Multilayer optical element |
| 04/06/2000 | DE19945170A1 Pattern mask, for ion beam, electron beam, x-ray or scanning angular limited electron beam lithography, is produced using a subdivided silicon nitride film as mask for mask substrate structuring |
| 04/05/2000 | EP0991261A2 Motion artifact correction in exposure systems |
| 04/05/2000 | EP0927381A4 Phase shifting circuit manufacture method and apparatus |
| 04/04/2000 | US6047116 Method for generating exposure data for lithographic apparatus |
| 04/04/2000 | US6045979 Method of photolithographically metallizing at least the inside of holes arranged in accordance with a pattern in a plate of an electrically insulating material |
| 04/04/2000 | US6045954 Subjecting a mixture of a nitrogen bearing gas, such as nitrogen and/or ammonia, with a silicon bearing gas, such as silane, to a plasma discharge, forming a layer of nitrogen rich silicon nitride through vapor deposition |
| 03/30/2000 | WO2000017710A1 Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography |
| 03/30/2000 | CA2342195A1 Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography |
| 03/29/2000 | EP0989457A2 Pellicle, method of preparing the same and exposure method |
| 03/29/2000 | EP0988647A1 Shaped shadow projection for an electron beam column |
| 03/28/2000 | US6044007 Modification of mask layout data to improve writeability of OPC |
| 03/28/2000 | US6043547 Circuit structure with an anti-reflective layer |
| 03/28/2000 | US6043437 Alumina insulation for coating implantable components and other microminiature devices |
| 03/28/2000 | US6043000 Method for manufacturing a semiconductor device |
| 03/28/2000 | US6042996 Photoresist layer is formed on the dielectric layer; exposure using a mask that has a region light completely passes over, a transmissive region and a opaque region; method uses one photolithography step, decreases cost |
| 03/28/2000 | US6042995 Multilayer film has thickness such that a portion of the ultraviolet radiation is transmitted through the inspection film, reflected from the multilayer film and back into the inspection film; the inspection film is developed, analyzed |
| 03/28/2000 | US6042977 Method and apparatus for manufacturing photomask and method of manufacturing a semiconductor device |
| 03/28/2000 | US6042973 Subresolution grating for attenuated phase shifting mask fabrication |
| 03/28/2000 | US6042972 Opaque material on substrate surface, reflective material configured to provide first alignment detection indication on portion of surface, second alignment detection indication is distributed among spaced regions on a second surface |
| 03/28/2000 | US6042971 Extracting patterns for forming mask from design data stored; calculating an aperture area of an aperture section requested in an eb mask using the data; generating cell data for aperture creation using the value and forming the pattern |
| 03/28/2000 | US6042738 Pattern film repair using a focused particle beam system |
| 03/28/2000 | US6042257 Correction method and correction apparatus of mask pattern |
| 03/23/2000 | WO2000016162A1 Method of using a modulated exposure mask |
| 03/23/2000 | WO1999065803A9 Automated opening and closing of ultra clean storage containers |
| 03/23/2000 | DE19944039A1 Blank for a phase shift photomask, useful in photolithographic circuit pattern transfer onto wafers, is produced by thin film reactive sputter deposition on a substrate moved repeatedly past a target |
| 03/22/2000 | CA2282924A1 Pellicle, method of preparing the same and exposure method |
| 03/21/2000 | US6040892 Multiple image reticle for forming layers |
| 03/21/2000 | US6040119 Exposing through a mask a dried photoresist coated onto substrate to actinic radiation, then baking for a time at a low temperature prior to final development of photoresist to provide accurate image |
| 03/21/2000 | US6040096 Measuring thermal expansion of mask substrate loosely supported to allow free thermal expansion, adjusting alignment of the mask substrate and the photosensitive substrate in response to the expansion amount |
| 03/21/2000 | US6040095 Mask having measurement marks throughout the area of an e-beam projection mask on a grid of struts extending between sub-field membrane mask areas, the marks having been applied concurrently with patterning sub-field membrane mask areas |
| 03/16/2000 | WO2000014601A1 Method of production of a negative photomechanical film, substrate and ink composition for carrying out such a method |
| 03/16/2000 | WO2000013916A1 Three-dimensional microstructure |
| 03/16/2000 | DE19938072A1 Self-aligned structure, especially for semiconductor, micro-optical or micromechanical devices, is produced using an existing substrate structure as mask for back face resist layer exposure |
| 03/15/2000 | EP0985643A2 Method for producing synthetic quartz glass for the use in ArF excimer laser lithography |
| 03/14/2000 | US6038020 Mask pattern verification apparatus employing super-resolution technique, mask pattern verification method employing super-resolution technique, and medium with program thereof |
| 03/14/2000 | US6038019 Method for monitoring defects of semiconductor device |