Patents
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
07/2001
07/24/2001US6265121 Method of optical proximity correction
07/24/2001US6265120 Geometry design of active region to improve junction breakdown and field isolation in STI process
07/24/2001US6265115 Projection lithography photomask blanks, preforms and methods of making
07/24/2001US6265114 Method of generating mask data in fabricating semiconductor devices
07/24/2001US6265113 Stress adjustment method of X-ray mask
07/24/2001US6264773 Apparatus and method for temporary and permanent attachment of pellicle frame to photomask substrate
07/19/2001US20010008809 Forming a resist layer on a target layer and patterning the resist layer to form original openings and a slit in the resist layer, reflowing resist layer patterned under heat to cause deformation of original openings and the slit
07/19/2001US20010008737 Exposure apparatus with a pulsed laser
07/19/2001US20010008137 Hydrogen gas dissolving in water
07/18/2001EP1117009A2 Method of making resist pattern
07/18/2001EP1117008A2 UV-assisted chemical modification of photoresist images
07/18/2001EP1117001A2 Photolithographic process and mask therefor
07/18/2001EP1117000A2 Phase shift mask blank, phase shift mask, and method of manufacture
07/18/2001EP1116999A1 Phase shift mask blank, phase shift mask and method of manufacture
07/18/2001EP1116998A2 Blank for halftone phase shift photomask and halftone phase shift photomask
07/18/2001EP1116072A1 Low thermal distortion extreme-uv lithography reticle
07/18/2001EP1116071A1 Mask for high resolution optical lithography
07/18/2001EP1116053A2 Multilayer optical element
07/18/2001EP0713586B1 Ablation transfer onto intermediate receptors
07/17/2001US6263292 High accuracy particle dimension measurement system
07/17/2001US6262428 Charged particle beam lithography apparatus for forming pattern on semi-conductor
07/17/2001US6261938 Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
07/17/2001US6261728 Mask image scanning exposure method
07/17/2001US6261726 Projection electron-beam lithography masks using advanced materials and membrane size
07/17/2001US6261725 Phase angle modulation of PSM by chemical treatment method
07/17/2001US6261724 Method of modifying a microchip layout data set to generate a predicted mask printed data set
07/17/2001US6261723 Transfer layer repair process for attenuated masks
07/17/2001US6261427 System for fabricating lithographic stencil masks
07/12/2001WO2001050506A1 Mask recycle process
07/12/2001US20010007732 Forming plurality of exposure openings; overcoating with photoresist; patterning
07/12/2001US20010007731 Phase shift mask blank, phase shift mask, and method of manufacture
07/11/2001EP0943119B1 Reticle that compensates for lens error in a photolithographic system
07/10/2001US6259567 Microlens structure having two anamorphic surfaces on opposing ends of a single high index substances and method of fabricating the same
07/10/2001US6258734 Method for patterning semiconductor devices on a silicon substrate using oxynitride film
07/10/2001US6258513 Phase shifting
07/10/2001US6258511 Dividing pattern to be transferred; forming stripes; masking; exposuring zones; transferring light source
07/10/2001US6258493 Phase shifting circuit manufacture method and apparatus
07/10/2001US6258492 X-ray mask structure and method of making the same
07/10/2001US6258491 Membrane on support substrate
07/10/2001US6258490 Forming patterns on semiconductor wafer with photoresist
07/10/2001US6258489 Photolithography
07/10/2001US6258446 Printing masking sheet and manufacturing method therefor
07/05/2001WO2000067291A3 Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography
07/05/2001US20010006766 Method for patterning thin films
07/05/2001US20010006754 Phase shift mask blank, phase shift mask and method of manufacture
07/05/2001US20010006753 Photomask substrate and a light-impermeable film patterned into a semiconductor integrated circuit and a second pattern adjusting a numerical aperture of the first pattern
07/05/2001US20010006722 Substrate having repaired metallic pattern and method and device for repairing metallic pattern on substrate
07/05/2001DE19958906A1 Herstellung von integrierten Schaltungen Manufacture of integrated circuits
07/05/2001DE19957542A1 Alternierende Phasenmaske Alternating phase mask
07/04/2001CN1302081A Electronic beam mask and method for producing mask and exposing method
07/04/2001CN1068123C Polyester precoated photosensitive plate and mfg. method thereof
07/03/2001US6255041 Method for formation of patterned resist layer
07/03/2001US6255024 Photolithography using attenuated phase-shifting masks. a semiconductor wafer manufactured using a process that includes the photolithographic method.
07/03/2001US6255023 Method of manufacturing binary phase shift mask
07/03/2001US6254942 Pellicle case having chemical traps
07/03/2001US6253464 Method for protection of lithographic components from particle contamination
06/2001
06/28/2001WO2001046706A2 Design-based reticle defect prioritization
06/28/2001WO2001046680A2 Reticle for use in photolithography and methods for making same and inspecting
06/28/2001WO2001046489A1 Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes
06/28/2001US20010005619 Method of forming photomask and method of manufacturing semiconductor device
06/28/2001US20010005566 Mask pattern correction method, mask pattern creation system using the correction method, and computer-readable recording medium
06/28/2001US20010005565 Exposing the photoresist layer to a first pattern-defining light using a first mask; and exposing the photoresist layer to a second pattern defining light using a second mask; forming two dimensional random pattern
06/28/2001US20010005564 Comprising a transparent substrate and a halftone phase shift film provided on the substrate, which has a multilayer construction in which first layer is capable of being etched with chlorinated gas and second layer with a fluorinated gas
06/28/2001US20010004871 Method of attaching a group to a pigment
06/28/2001US20010004864 Apparatus for producing printing plates
06/28/2001DE19961867A1 Einrichtung zur Herstellung von Druckformen Means for the production of printing plates
06/28/2001DE10051584A1 Photolithographic mask for manufacture of semiconductor circuits has pattern edges distributed on corresponding monitoring markings
06/26/2001US6252651 Exposure method and exposure apparatus using it
06/26/2001US6252647 Projection exposure apparatus
06/26/2001US6252226 Nanometer scale data storage device and associated positioning system
06/26/2001US6251549 Generic phase shift mask
06/26/2001US6251547 Simplified process for making an outrigger type phase shift mask
06/26/2001US6251546 Method of fabricating devices using an attenuated phase-shifting mask and an attenuated phase-shifting mask
06/26/2001US6251545 Applying antireflection coating on substrate; attenuation film
06/26/2001US6251544 Positioning a mask; exposure to light; calibration of pattern
06/26/2001US6251543 Accuracy fitting of cover
06/26/2001US6251541 Shaping a charged particle beam
06/26/2001US6251217 Reticle adapter for a reactive ion etch system
06/21/2001US20010004765 Method of checking exposure patterns formed over photo-mask
06/21/2001US20010004508 Light exposure method, light exposure apparatus, pellicle and method for relieving warpage of pellicle membrane
06/21/2001US20010004122 Semiconductor device having dummy gates and its manufacturing method
06/21/2001DE19958201A1 Lithographic process for structuring layers during the manufacture of integrated circuits comprises guiding radiation emitted by a radiation source and lying in the extreme UV range onto photosensitive layers via a mask
06/21/2001DE10050068A1 Method of analyzing factors responsible for errors in wafer patterns during the manufacture of semiconductor device, involves placing first and second masks in etching chamber to form an overlapping zone between the two masks
06/20/2001CN1300384A Retaining device for photo blanks
06/19/2001US6249904 Method and apparatus for submicron IC design using edge fragment tagging to correct edge placement distortion
06/19/2001US6249900 Method of designing an LSI pattern to be formed on a specimen with a bent portion
06/19/2001US6249597 Method of correcting mask pattern and mask, method of exposure, apparatus thereof, and photomask and semiconductor device using the same
06/19/2001US6249452 Semiconductor device having offset twisted bit lines
06/19/2001US6249335 Photo-mask and method of exposing and projection-exposing apparatus
06/19/2001US6249297 Process for continuously printing a plastic film, device for carrying out the process and printed plastic film obtained by the process
06/19/2001US6249036 Stepper alignment mark formation with dual field oxide process
06/19/2001US6248486 Method of detecting aberrations of an optical imaging system
06/14/2001WO2001042996A2 Design of photomasks for semiconductor device fabrication
06/14/2001WO2001042964A2 Method and apparatus for structure prediction based on model curvature
06/14/2001WO2001042857A1 Photosensitive resin print plate material and production method for photosensitive resin print plate
06/14/2001WO2001042855A2 Lithography device which uses a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band in this range
06/14/2001WO2001042854A1 Platemaking system and method using an imaging mask made from photochromic film
06/14/2001US20010003673 Etch bias tuning for enhancement of stepper life
06/14/2001US20010003263 Modified pigments having improved dispersing properties
06/13/2001EP1107313A2 On-chip test circuit to control the succession of exposure masks