Patents
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
09/2002
09/19/2002DE10206143A1 Reflektierender Maskenrohling und reflektierende Maske für EUV-Belichtung und Verfahren zum Herstellen der Maske Reflective mask blank and reflective mask for EUV exposure and method of manufacturing the mask
09/19/2002DE10051466C2 Anordnung als Maske für Lithographie Arrangement as a mask for lithography
09/18/2002EP1241525A2 An optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features
09/18/2002EP1241524A2 Photomask blank, Photomask and method of manufacture
09/18/2002EP1241523A1 Photomask, method of producing photomask, and method of making pattern using photomask
09/18/2002EP1240557A1 Imaging method using phase boundary masking with modified illumination
09/18/2002EP1240556A1 Photolithography method, photolithography mask blanks, and method of making
09/18/2002EP1240551A2 Lithography device which uses a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band in this range
09/18/2002CN1369747A Exposure method and exposure device
09/18/2002CN1369745A Correction method of photomask and mfg. method of semiconductor element
09/18/2002CN1091262C 相移掩模 Phase shift mask
09/18/2002CN1091261C Phase shift mask and method for fabricating same
09/17/2002US6453458 System and method for generating a flat mask design for projecting a circuit pattern to a spherical semiconductor device
09/17/2002US6453457 Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
09/17/2002US6453274 Method of forming a pattern using proximity-effect-correction
09/17/2002US6453000 Exposure method, exposure device and semiconductor device manufacturing method
09/17/2002US6451680 Method for reducing borderless contact leakage by OPC
09/17/2002US6451513 Phase shifting lithography mask
09/17/2002US6451505 Imageable element and method of preparation thereof
09/17/2002US6451490 Method to overcome image shortening by use of sub-resolution reticle features
09/17/2002US6451489 Phase shift photomask
09/17/2002US6451488 Single-level masking with partial use of attenuated phase-shift technology
09/17/2002US6451176 Electrostatic particle trap for ion beam sputter deposition
09/12/2002WO2002071466A1 Metal pattern formation
09/12/2002WO2002071154A2 Method of uniformly coating a substrate
09/12/2002WO2002071153A2 Method for uniformly coating a substrate
09/12/2002WO2002071105A2 Method of fabricating reflection-mode euv diffraction elements
09/12/2002US20020129327 Phase shifting design and layout for static random access memory
09/12/2002US20020127889 Forming hardmask by applying electric field to fluoro-organosilane and oxidizing gas
09/12/2002US20020127881 Step mask
09/12/2002US20020127493 Providing a substrate; forming a first metal layer on the substrate; forming a photo-resist; exposing and developing the photo-resist using an exposure system and only a single mask such that the photo-resist has a pattern having comb shape
09/12/2002US20020127483 For use in semiconductor device
09/12/2002US20020127480 Method for producing an alternating phase mask
09/12/2002US20020127479 Phase shift masking for complex patterns with proximity adjustments
09/12/2002US20020127477 Durable or stable than conventional materials; optimized for use in deep ultraviolet radiation applications or advanced lithography; integrated circuits
09/12/2002US20020127360 Pellicle, producing method thereof and adhesive
09/12/2002US20020127352 Irradiating focused ion beam and depositing a film on a narrowly limited strip shape region from ends of sample; sequentially shifting irradiation region in a tip end direction to cause a thin deposition layer to extend
09/12/2002US20020127334 Mounting substrate inside enclosed housing and passing a control gas; controlling a solvent vapor concentration of a control gas; extruding polymer solution onto surface of substrate in housing; spinning the substrate; exhausting gas
09/12/2002US20020126267 Illumination device for projection system and method for fabricating
09/12/2002US20020125443 Dual layer reticle blank and manufacturing process
09/12/2002US20020125230 Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed laser beam
09/12/2002US20020125127 Magnetron sputtering system and photomask blank production method based on the same
09/12/2002DE10108827A1 Messverfahren zur Bestimmung der Breite einer Struktur auf einer Maske Techniques to determine the width of a structure on a mask
09/12/2002CA2435755A1 Metal pattern formation
09/11/2002EP1239331A2 Illumination optimization for specific mask patterns
09/11/2002EP1239329A2 A process for making a flexographic printing plate and a photosensitive element for use in the process
09/11/2002EP1238310A1 Ultraviolet and vacuum ultraviolet transparent polymer compositions and their uses
09/11/2002EP1238309A1 Ultraviolet and vacuum ultraviolet transparent polymer compositions and their uses
09/11/2002CN1368759A Non-grounding technology and optical approximatino correcting method for generating optical mask pattern
09/11/2002CN1368661A Optical nearby correcting method based on contact hole model
09/11/2002CN1090812C Method for detecting phase error of phase shift mask
09/11/2002CN1090767C Photoenhanced diffusion patterning for organic polymer films
09/10/2002US6449758 Apparatus for and method of automatically placing and routing
09/10/2002US6449387 Method for analyzing light intensity distribution
09/10/2002US6449386 Patterned figure resolution verification method and semiconductor pattern forming method
09/10/2002US6449332 Exposure apparatus, and device manufacturing method
09/10/2002US6448999 Method for microlithographic writing with improved precision
09/10/2002US6447983 Maskless photolithography method where photosensitizer is selectively applied to portion of film in desired pattern prior to exposure
09/10/2002US6447962 Identifying defect by scanning with optical inspection tool; coating with layer of resist; exposing defect area and then removing via dry etch; depositing carbon film and exposing to ion beam; clean up with sodium hydroxide
09/10/2002US6447961 Optical proximity correction methods, and methods forming radiation-patterning tools
09/10/2002US6447960 Electron beam exposure mask and pattern designing method thereof
09/10/2002US6447959 Amplitude mask for writing long-period gratings
09/10/2002US6447688 Method for fabricating a stencil mask
09/06/2002WO2002069390A2 Grating test patterns and methods for overlay metrology
09/06/2002WO2002069379A1 X-ray reflective mask, method of protecting the reflective mask, x-ray exposure device, and method of manufacturing semiconductor device
09/06/2002WO2002069054A1 Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
09/06/2002WO2002069037A2 Attenuated embedded phase shift photomask blanks
09/06/2002WO2002068350A1 Oxygen doping of silicon oxyfluoride glass
09/05/2002US20020124235 Method of forming mask for charged particle beam exposure and processing program of pattern data for forming mask for charged particle beam exposure
09/05/2002US20020123866 Optical proximity correction algorithm for pattern transfer
09/05/2002US20020123168 Apparatus and methods for blocking highly scattered charged particles in a patterned beam in a charged-particle-beam microlithography system
09/05/2002US20020122994 Identifying features in layout to be defined using phase shifting, placing shifter shapes to edges of of features; assigning phase to shifter shapes according to phase dependencies and costs to create a of phase shifters; refining
09/05/2002US20020122993 Stencil reticles for charged-particle-beam microlithography, and fabrication methods for making same
09/05/2002US20020122992 Preparing a photomask substrate with a mask pattern; forming a reference hole; applying an ion beam to release charged particles; position of the reference hole; calculating a positional relationship; correcting the defect
09/05/2002US20020122991 Halftone phase shift mask and mask blank
09/05/2002US20020122990 For inspecting the presence of the defect of the pattern formed on, for example, photomask
09/05/2002US20020122989 Method for fabricating reticles for EUV lithography without the use of a patterned absorber
09/05/2002US20020122626 Lithographic fabrication of phase mask for fiber bragg gratings
09/05/2002US20020122255 Method of manufacturing diffractive optical element
09/05/2002US20020121109 Glass substrate processing method
09/04/2002EP1237046A2 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
09/04/2002EP1237041A2 Method of fabricating mask for extreme ultraviolet radiation
09/04/2002EP1075672B1 Protection of lithographic components from particle contamination
09/04/2002EP0782719B1 Protective mask for pellicle
09/04/2002CN1090341C Colour scanner
09/04/2002CN1090340C Rewinder
09/03/2002US6446252 Photomask method for making the same capacitor cell area near outmost cell arrays
09/03/2002US6444483 A full area of a semiconductor integrated circuit is divided into unit areas, a mask data file for use in a beam exposure system or an inspection apparatus is produced based on cad data of the full area, full-area header information in which a
09/03/2002US6444399 Methods for achieving reduced effects of overlayer and subfield-stitching errors in charged-particle-beam microlithography, and device manufacturing methods comprising such microlithography methods
09/03/2002US6444398 Method for manufacturing a semiconductor wafer using a mask that has several regions with different scattering ability
09/03/2002US6444382 Straight line defect detection tool
09/03/2002US6444381 Electron beam flood exposure technique to reduce the carbon contamination
09/03/2002US6444375 Increasing integration of semiconductor devices via narrowing the width of the pattern formed in the mask pattern and the distance between; photolithography; semiconductors; integrated circuits
09/03/2002US6444374 Dividing the mask into partial areas, forming partial masks which have apertures with patterns identical with plurality of partial areas, exposing the patterns of masks on a mask substrate by electron beam proximity exposure method
09/03/2002US6444373 Modification of mask layout data to improve mask fidelity
09/03/2002US6444372 Non absorbing reticle and method of making same
09/03/2002US6443302 Pellicle and storage case therefor having chemical traps
08/2002
08/29/2002WO2002014846A3 Multiple beam inspection apparatus and method
08/29/2002US20020119380 Method of manufacturing photomasks by plasma etching with resist stripped
08/29/2002US20020119379 Simplification of lithography