| Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849) |
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| 12/19/2002 | US20020192575 Forming printable features on a reticle substrate; forming sub-resolution connecting structure on reticle substrate, sub-resolution connecting structure connecting printable reticle features |
| 12/19/2002 | US20020192574 For fabricating large scale integrated semiconductor circuits |
| 12/19/2002 | US20020192573 Exposure mask, method for manufacturing the mask, and exposure method |
| 12/19/2002 | US20020192572 Masks |
| 12/19/2002 | US20020192571 Method for fabricating a lithographic reflection mask in particular for the patterning of a semiconductor wafer, and a reflection mask |
| 12/19/2002 | US20020192570 Optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features |
| 12/19/2002 | CA2454892A1 Optical element with full complex modulation |
| 12/18/2002 | EP1267209A1 Maskless exposure system using mems devices |
| 12/18/2002 | EP1266265A1 Platemaking system and method using an imaging mask made from photochromic film |
| 12/18/2002 | CN1386300A Method of producing semiconductor integrated circuit device and method of producion multi-chip module |
| 12/18/2002 | CN1385758A Method for making microstructured unit, method for making electronic device and equipment for making same |
| 12/18/2002 | CN1096625C Pattern structure of photomask |
| 12/17/2002 | US6495870 Semiconductor device and method for patterning the semiconductor device in which line patterns terminate at different lengths to prevent the occurrence of a short or break |
| 12/17/2002 | US6495297 Type mask for combining off axis illumination and attenuating phase shifting mask patterns |
| 12/17/2002 | US6495296 Method for limiting particle aggregation in a mask deposited by a colloidal suspension |
| 12/17/2002 | US6494966 Rinsing a substrate with a pattern in water to remove active materials; rinsing in an acid having an acid concentration below that which attacks the substrate to dissolve surface contaminants; chrome photomasks; phase-shift masks |
| 12/12/2002 | WO2002099856A1 Electron beam exposure-use mask and electron beam exposure method |
| 12/12/2002 | WO2002099818A1 Reflecting device for electromagnetic waves |
| 12/12/2002 | WO2002099533A2 Alternating phase-shift mask inspection method and apparatus |
| 12/12/2002 | WO2002099532A1 Method for making mask by using wasted mask |
| 12/12/2002 | US20020188925 Pattern-creating method, pattern-processing apparatus and exposure mask |
| 12/12/2002 | US20020188924 Optical proximity correction for phase shifting photolithographic masks |
| 12/12/2002 | US20020187636 Exposure control for phase shifting photolithographic masks |
| 12/12/2002 | US20020187573 Method of deforming a pattern and semiconductor device formed by utilizing deformed pattern |
| 12/12/2002 | US20020187434 Process for device fabrication in which the size of lithographically produced features is subsequently reduced |
| 12/12/2002 | US20020187433 Process for patterning a membrane |
| 12/12/2002 | US20020187431 Using two masks; stripe shapes |
| 12/12/2002 | US20020187429 Flexography printing plates; drawing images; using ester solvents |
| 12/12/2002 | US20020187411 Charged-particle-beam microlithography methods exhibiting reduced coulomb effects |
| 12/12/2002 | US20020187407 Using ultraviolet radiation; prevention polarization; lithography patterns |
| 12/12/2002 | US20020187406 Amplification of pattern segments; writing on substrate using electron beams |
| 12/12/2002 | US20020187405 Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks |
| 12/12/2002 | US20020186879 Alternating phase-shift mask inspection method and apparatus |
| 12/12/2002 | US20020186356 Optical proximity correction method utilizing gray bars as sub-resolution assist features |
| 12/12/2002 | DE10127689A1 Generating integrated electrical circuit manufacturing mask structure scatter bars involves generating bars near edges or between edge pairs, checking and correcting separations |
| 12/12/2002 | DE10126130A1 Producing contact holes in integrated circuit involves using optical lithography with mask with elongated, slit-shaped openings for producing essentially circular and/or elongated holes |
| 12/11/2002 | EP1264213A2 Method and apparatus for mixed-mode optical proximity correction |
| 12/11/2002 | CN1384540A Topological process of wiring diagram, semiconductor device and optical patter-correcting method |
| 12/11/2002 | CN1384532A Ordering method of photomask for semiconductor circuit manufacture |
| 12/11/2002 | CN1384530A Image forming method, exposure mask for forming image and its making process |
| 12/10/2002 | US6493866 Phase-shift lithography mapping and apparatus |
| 12/10/2002 | US6493865 Method of producing masks for fabricating semiconductor structures |
| 12/10/2002 | US6493082 Inspection method, apparatus and system for circuit pattern |
| 12/10/2002 | US6492729 Configuration and method for connecting conductor tracks |
| 12/10/2002 | US6492189 Method of arranging exposed areas including a limited number of test element group (TEG) regions on a semiconductor wafer |
| 12/10/2002 | US6492097 Photolithography; forming positive photoresist layer; first photomask with opaque main lines and scattering bars on either side; second photomask having light pervious isolines |
| 12/10/2002 | US6492078 Simple operation for adjusting optical proximity effect of a light shielding film pattern and data processing |
| 12/10/2002 | US6492074 Substrate for damping the beam; metallic filme for interrupting the beam; main patern with openings bored through the supstrate; auxiliary pattern with at least one window partion |
| 12/10/2002 | US6492073 Removal of line end shortening in microlithography and mask set for removal |
| 12/10/2002 | US6492072 Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass |
| 12/10/2002 | US6492070 Electron beam exposure mask and method for manufacturing electron beam exposure mask |
| 12/10/2002 | US6492069 Utilizing single undeveloped photoresist layer; avoiding extra exposure and development; higher yield, lower cost |
| 12/10/2002 | US6492067 Removable pellicle for lithographic mask protection and handling |
| 12/10/2002 | US6492066 Characterization and synthesis of OPC structures by fourier space analysis and/or wavelet transform expansion |
| 12/05/2002 | WO2002097486A2 Hybrid optical component for x ray applications and method associated therewith |
| 12/05/2002 | WO2002097485A2 Method for controlled modification of the reflective qualities of a multi-layer |
| 12/05/2002 | WO2002097326A1 Antistatic optical pellicle |
| 12/05/2002 | WO2002097156A1 Advanced method for covering a support, device and structure associated therewith |
| 12/05/2002 | WO2002079875A3 Extreme ultraviolet mask with improved absorber |
| 12/05/2002 | WO2002061489A3 Lithographic fabrication of phase mask for fiber bragg gratings |
| 12/05/2002 | WO2001057496A3 Straight line defect detection |
| 12/05/2002 | US20020182895 Method for fabricating positionally exact surface-wide membrane masks |
| 12/05/2002 | US20020182830 Method of forming a resist pattern for blocking implantation of an impurity into a semiconductor substrate |
| 12/05/2002 | US20020182550 Optical mask correction method |
| 12/05/2002 | US20020182549 Providing a substrate having a layer of photoresist formed thereon; providing a plurality of reticles havingpatterns with a second pitch; exposure to form exposure regions; performing a development ofphotoresist layer |
| 12/05/2002 | US20020182545 Exposing a partial area of a resist film formed on a surface of a substrate to light of different intensities; developing the resist film exposed |
| 12/05/2002 | US20020182523 Scatter bar is applied on a mask to image the main structure from the mask onto a substrate by exposure; correction value for the OPC is selected in dependence upon a spacing between two parts of the main structure |
| 12/05/2002 | US20020182521 Method of manufacturing semiconductor device |
| 12/05/2002 | US20020182519 For use in projecting a circuit pattern on a photosensitive resist covered wafer having a transparent substrate with a reflective or dielectric layer thereon. |
| 12/05/2002 | US20020182518 High reflectance areas for reflecting radiation of an alignment beam of radiation, and low reflectance areas for reflecting less radiation of the alignment beam, comprising scattering structures for scattering and absorbing radiation |
| 12/05/2002 | US20020182516 Needle comb reticle pattern for critical dimension and registration measurements using a registration tool and methods for using same |
| 12/05/2002 | US20020182515 Three dimensional mask |
| 12/05/2002 | US20020182514 Organic bottom antireflective coating for high performance mask making using optical imaging |
| 12/05/2002 | US20020181092 Antistatic optical pellicle |
| 12/05/2002 | US20020180947 Multiple image reticle for forming layers |
| 12/05/2002 | US20020180133 Method and apparatus for processing workpiece by using X-Y stage capable of improving position accuracy |
| 12/05/2002 | US20020179856 Charged particle beam lithography apparatus for forming pattern on semi-conductor |
| 12/05/2002 | US20020179576 Glass substrate and leveling thereof |
| 12/05/2002 | US20020179333 Circuit board and manufacturing method therefor |
| 12/05/2002 | DE10127086A1 Reflector for electromagnetic waves in wavelength range below 200 mm |
| 12/05/2002 | DE10124736A1 Test reticle for proximity characterizing of scanner lenses in lithography technology |
| 12/05/2002 | DE10123768A1 Production of lithographic reflection mask used in production of semiconductor chips comprises applying absorber layer and reflection layer on substrate, and forming structures and trenches on mask |
| 12/05/2002 | DE10121179A1 Determining image distortions of optical illuminated devices comprises applying photo-active layer on substrate, and forming latent image in photo-active layer |
| 12/05/2002 | DE10121178A1 Determining image distortions of photomasks comprises applying photo-active layer on substrate, and forming latent image of mask in photo-active layer |
| 12/04/2002 | EP1263028A1 Exposure mask, method for manufacturing the mask, and exposure method |
| 12/04/2002 | EP1261752A1 Method and apparatus for repairing lithography masks using a charged particle beam system |
| 12/04/2002 | EP0996547B1 The production of microstructures for use in assays |
| 12/04/2002 | CN1383188A Pattern correction method of exposed mask and mfg. method for semiconductor device |
| 12/04/2002 | CN1383187A Mfg. method for semiconductor device |
| 12/03/2002 | US6489627 Method for inspecting a reticle and apparatus for use therein |
| 12/03/2002 | US6489083 Selective sizing of features to compensate for resist thickness variations in semiconductor devices |
| 12/03/2002 | US6489067 Mask used in reduction projection exposure in photolithography |
| 12/03/2002 | US6489066 Mitigation of substrate defects in reflective reticles using sequential coating and annealing |
| 11/28/2002 | WO2002095498A2 Lithographic method of manufacturing a device |
| 11/28/2002 | WO2001096955A3 A method and apparatus for etching metal layers on substrates |
| 11/28/2002 | US20020177082 Self-aligned aperture masks having high definition apertures |
| 11/28/2002 | US20020177078 Forming sub-wavelength size contact openings using attenuated phase-shift photomasks |
| 11/28/2002 | US20020177076 Exposure method suitable for use in projection exposure process for printing patterns of various sizes and shapes onto resist-coated substrate by projection exposure |
| 11/28/2002 | US20020177055 Charged particle processing for forming pattern boundaries at a uniform thickness |
| 11/28/2002 | US20020177054 Projection lens exposes pattern to illumination; for fabrication of semiconductor chips, integrated circuits |