Patents
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
01/2003
01/14/2003US6507390 Method and apparatus for a reticle with purged pellicle-to-reticle gap
01/14/2003US6506544 Exposure method and exposure apparatus and mask
01/14/2003US6506526 Exposure to wavelengths; reflective mask
01/14/2003US6506525 Etching; applying correcting film; radiation transparent substrate
01/09/2003WO2003003119A1 Repair of amplitude defects in a multilayer coating
01/09/2003WO2003003118A2 Mask repair with electron beam-induced chemical etching
01/09/2003WO2003001869A2 Method and apparatus for use of plasmon printing in near-field lithography
01/09/2003WO2002069037A3 Attenuated embedded phase shift photomask blanks
01/09/2003US20030009739 Pattern data generation system, method and program for pattern data generation, reticle fabricating method, and semiconductor device manufacturing method using the pattern data
01/09/2003US20030008222 Includes identifying features for which phase shifting can be applied, automatically mapping the phase shifting regions for implementation of such features, resolving phase conflicts, applying sub-resolution assist features
01/09/2003US20030008221 Photomask frame modification to eliminate process induced critical dimension control variation
01/09/2003US20030008220 Method to control nested to isolated line printing
01/09/2003US20030008219 Phase shift film is a multilayer film made of at least two types of layer alternately, each haivng a different composition and containing atleast one element selected from among metals, silicon, oxygen and nitrogen
01/09/2003US20030008218 Alternating phase mask
01/09/2003US20030008217 Preparing a substrate for a pattern-formed structure having a characteristic-modifiable layer whose characteristic at a surface thereof can be modified by the action of a photocatalyst
01/09/2003US20030008216 Assist features for contact hole mask patterns
01/09/2003US20030008215 Method for correcting optical proximity effects in a lithographic process using the radius of curvature of shapes on a mask
01/09/2003US20030007596 Method for adjusting gap between two objects and exposure method using the same, gap adjusting apparatus, and exposure apparatus
01/09/2003US20030007139 Aligner
01/09/2003US20030006214 Method to repair localized amplitude defects in a EUV lithography mask blank
01/09/2003US20030006212 Method of making phase mask for machining optical fiber and optical fiber having bragg diffraction grating produced using the phase mask for machining optical fiber
01/08/2003EP1274287A1 Debris removing system for use in X-ray source
01/08/2003EP1273877A2 Method and measuring device for the detection of an object
01/08/2003EP1272903A2 Apparatus for generating a laser pattern on a photomask and associated methods
01/08/2003EP0974074B1 Highly transparent, colour-pigmented high molecular weight material
01/08/2003CN1389902A Method for manufacturing exposure mask and its application
01/07/2003US6504644 Modulator design for pattern generator
01/07/2003US6504609 Inspection method, apparatus and system for circuit pattern
01/07/2003US6503852 Manufacturing process for semiconductor device, photomask, and manufacturing apparatus for semiconductor device
01/07/2003US6503693 UV assisted chemical modification of photoresist
01/07/2003US6503685 Heat-sensitive composition comprising a substance which absorbs light and generates heat, an anionic self water-dispersible resin particle, and a fluorine base surfactant
01/07/2003US6503671 Lithography system for accomplishing a smaller size and higher performance of a semiconductor device
01/07/2003US6503669 Photomask blank, photomask and method of manufacture
01/07/2003US6503668 Phase shift mask blank, phase shift mask, and method of manufacture
01/07/2003US6503667 Method for fabricating mask
01/07/2003US6503666 Phase shift masking for complex patterns
01/07/2003US6503665 Phase shift mask and semiconductor device fabricated with the phase shift mask
01/07/2003US6503664 Thin film materials for the preparation of attenuating phase shift masks
01/07/2003US6502426 VUV transmitting silicon oxyfluoride glass, said silicon oxyfluoride glass containing a plurality of doped O2 molecules with absorption bands: excimer laser exposure of at least 9.92 E6 pulses at 2 mJ/cm2- pulse. supplying an oxygen doping
01/03/2003WO2002041076A3 Photolithographic mask
01/02/2003US20030005390 Pattern correction method, apparatus, and program
01/02/2003US20030003739 Method of producing large-area membrane masks by dry etching
01/02/2003US20030003393 Photoresist, photolithography method using the same, and method for producing photoresist
01/02/2003US20030003385 Carrying out the correction for each region of the image field making use of the corresponding set of rules.
01/02/2003US20030003383 Device manufacturing method, device manufactured thereby and a mask for use in the method
01/02/2003US20030003377 Repair structures are applied on the exposure mask substrate material which have a lower phase shift compared to the dummy structures; preferably repair structure is arranged laterally offset with respect to the defect in the dummy structure
01/02/2003US20030003376 Avoiding charging effects of isolated chromium structures during the structuring of a second level of attenuated phase shift masks, a previous chromium etching step is preferably carried out in a time-controlled manner
01/02/2003US20030003375 Block mask making method, block mask and exposure apparatus
01/02/2003US20030003374 Generating a plasma of a processing gas comprising carbon monoxide and a chlorine containing gas, and etching exposed portions of the metal layer of a metal photomask
01/02/2003US20030003373 Multilayer mirror having alternating layers of a first material with a high index of refraction and a second material with a low index of refraction, the second region having a compound of the first and second material
01/02/2003US20030003372 Each reflector comprising: a first mirror; and a second mirror separated from said first mirror by a gap.
01/02/2003US20030003371 Removed by employing methods which provide a gradual sloped region in the transparent or semi-transparent substrate which is formed in an area of the substrate opposite to that of the opaque image which is formed thereon.
01/02/2003US20030002147 High NA system for multiple mode imaging
01/02/2003US20030001155 Pattern forming method and semiconductor device manufactured by ussing said pattern forming method
01/02/2003US20030000921 Mask repair with electron beam-induced chemical etching
01/02/2003EP1270222A2 Imaging apparatus and printing plate mounting surface having registration detection
01/02/2003EP1269266A1 A method of improving photomask geometry
01/02/2003EP1269264A2 Method for evaluation of reticle image using aerial image simulator
01/02/2003EP0759192B1 Process control strip and a method of recording
01/02/2003DE10127540C1 Mask for manufacture of semiconductor device has imaging region and second region with second exposure mask obtained by replication of part of exposure mask in imaging region
01/01/2003CN1388918A Method of forming optical images, mask for use in this method, method of manufacturing a device using this method, and apparatus for carrying out this method
12/2002
12/31/2002US6501824 X-ray mask with a micro-actuator
12/31/2002US6501083 Methods for calculating cumulative dose of exposure energy from regions of a microlithography reticle for use in correcting proximity effects
12/31/2002US6500588 Reticle cleaning without damaging pellicle
12/31/2002US6500587 Binary and attenuating phase-shifting masks for multiple wavelengths
12/27/2002WO2002103413A1 Optical member, process for producing the same, and projection aligner
12/27/2002WO2002071153A3 Method for uniformly coating a substrate
12/27/2002WO2002065482A3 Collector with an unused area for lighting systems having a wavelength of ≤ 193 nm
12/26/2002US20020199157 Mixed-mode optical proximity correction
12/26/2002US20020197567 Method of manufacturing a semiconductor device and designing a mask pattern
12/26/2002US20020197565 Method of transferring photomask patterns
12/26/2002US20020197546 Phase shift masking for "double-T" intersecting lines
12/26/2002US20020197545 X-ray transmission film is held by the holding frame with an even step-like structure defined at its peripheral portion.
12/26/2002US20020197544 Halftone phase shift mask and its manufacturing method
12/26/2002US20020197543 Identifying cutting areas for phase shift regions based upon characteristics of said pattern; assigning phase values to phase shift windows in the phase shift regions by cutting the phase shift regions in selected ones of the cutting areas
12/26/2002US20020197542 Phase error monitor pattern and application
12/26/2002US20020197541 Two areas phase shifted relative to the other two areas to create unexposed areas that are have polarizations orthogonal to each other, are frequency shifted relative to the two other areas, or are exposed at a different time
12/26/2002US20020197540 Photosensitive flexographic device with associated thermally addressable mask
12/26/2002US20020197509 Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
12/26/2002US20020196968 Review work supporting system
12/26/2002US20020196896 Exposure method, exposure apparatus, X-ray mask, semiconductor device and microstructure
12/26/2002US20020196464 Image processing device
12/26/2002US20020196416 Projection exposure method and apparatus
12/25/2002CN1387636A UV-absorbing support layers and flexographic printing elements comprising same
12/24/2002US6499003 Method and apparatus for application of proximity correction with unitary segmentation
12/24/2002US6498105 Method of forming fine patterns of a semiconductor device
12/19/2002WO2002101803A1 Mask and production method therefor and production method for semiconductor device
12/19/2002WO2002101602A1 Apparatus and methods for modeling process effects and imaging effects in scanning electron microscopy
12/19/2002WO2002101468A2 Design and layout of phase shifting photolithographic masks
12/19/2002WO2002101466A2 Exposure control for phase shifting photolithographic masks
12/19/2002WO2002101465A2 Phase conflict resolution for photolithographic masks
12/19/2002WO2002101464A2 Optical proximity correction for phase shifting photolithographic masks
12/19/2002WO2002101419A2 Optical element with full complex modulation
12/19/2002WO2002043139A3 Two mask via pattern to improve pattern definition
12/19/2002US20020194576 Method of evaluating the exposure property of data to wafer
12/19/2002US20020192958 Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures containing monofluoromethane and oxygen
12/19/2002US20020192598 Defining multiple position-measurement marks on the reticle; using a reticle-inspection device detecting respective positional coordinates of marks on the reticle; mounting reticle in the microlithography apparatus and detecting
12/19/2002US20020192579 Gas purge method and exposure apparatus
12/19/2002US20020192578 Using same inspection wavelength as an exposure wavelength for use in exposure apparatus and using detection optical system of inspection apparatus having a numerical aperture larger than a numerical aperture of projection optical system
12/19/2002US20020192576 Method for forming color filter, method for forming light emitting element layer, method for manufacturing color display device comprising them, or color display device