G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
11/2002
11/05/2002	US6475575 Pellicle and method for manufacture thereof
11/05/2002	US6475399 Method for fabricating a stencil mask
10/2002
10/31/2002	WO2002086962A1 Method and apparatus for improving resolution of objects in a semiconductor wafer
10/31/2002	WO2002086627A1 Prioritizing the application of resolution enhancement techniques
10/31/2002	WO2002086622A2 Ion-beam deposition process for manufacturing binary photomask blanks
10/31/2002	WO2002086621A2 Ion-beam deposition process for manufacturing multilayered attenuated phase shift photomask blanks
10/31/2002	WO2002086620A2 Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks
10/31/2002	WO2001084235A3 Multiple exposure process for formation of dense rectangular arrays
10/31/2002	US20020162079 Automated wiring pattern layout method
10/31/2002	US20020161665 Method for placing orders for masks used to fabricate semiconductor devices
10/31/2002	US20020161534 Method and apparatus for inspecting a substrate
10/31/2002	US20020160281 Determination variations; calibration
10/31/2002	US20020160280 Method and layout for high density reticle
10/31/2002	US20020160279 Pattern formation method, mask for exposure used for pattern formation, and method of manufacturing the same
10/31/2002	US20020160278 Method for designing photolithographic reticle layout, reticle, and photolithographic process
10/31/2002	US20020160277 Dividing pattern into zones; drawing
10/31/2002	US20020160276 Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
10/31/2002	US20020160275 Photoresist mask; multizone configuration
10/31/2002	US20020159049 Measuring method of illuminance unevenness of exposure apparatus, correcting method of illuminance unevennes, manufacturing method of semiconductor device, and exposure apparatus
10/31/2002	US20020158198 Charged particle beam apparatus
10/31/2002	US20020157485 Mask for evaluating selective epitaxial growth process
10/31/2002	US20020157421 Method for producing titania-doped fused silica glass
10/31/2002	DE10214092A1 Half tone phase shift mask blank has phase shift membranes with high and low refractive indexes, alternately laminated to adjust phase shift and transmittance of light
10/31/2002	DE10115290A1 Manufacturing method for integrated circuit photomask e.g. for microlithography, requires non-imaging transmission zone of first transmission type for reducing space between projection image of first- and second-mask zones
10/30/2002	EP1253117A1 Glass substrate for photomasks and preparation method
10/30/2002	CN1376999A Device and method to select manufactures of photomask by received data
10/29/2002	US6473882 Method of layout compaction
10/29/2002	US6473520 Pellicle, identification system of the same, and method of identifying the same
10/29/2002	US6472766 Step mask
10/29/2002	US6472123 Photolithography devices such as reticles and semiconductor masks, clear fields by electron-beam processing; exposing a first portion of a photoresist layer over said preform with an electron beam in accordance with a first writing pattern
10/29/2002	US6472122 Very thin layer of alumina, zerconia, or other ceramic, less than 25 microns thick,
10/29/2002	US6472121 Photocurable elements
10/29/2002	US6472112 Method for measuring reticle leveling in stepper
10/29/2002	US6472108 Optical proximity correction method
10/29/2002	US6472107 Disposable hard mask for photomask plasma etching
10/24/2002	WO2002084832A1 Protection of reticles from electrostatic charges
10/24/2002	WO2002084671A1 Multi-layered film reflector manufacturing method
10/24/2002	WO2002084400A2 Preparation of photomasks
10/24/2002	WO2002084399A1 Opc mask manufacturing method, opc mask, and chip
10/24/2002	WO2001061409A9 Apparatus and method of cleaning reticles for use in a lithography tool
10/24/2002	US20020157083 Exposure mask pattern correction method, pattern formation method, and a program product for operating a computer
10/24/2002	US20020157081 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
10/24/2002	US20020157068 Data management method for reticle/mask writing
10/24/2002	US20020155725 Method and apparatus for etching photomasks
10/24/2002	US20020155723 Dry-etching method and apparatus, photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereof
10/24/2002	US20020155656 Connecting contactor apertures; adjustment tolerance patterns; overcoating substrate with dielectrics; phase shifting
10/24/2002	US20020155635 Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes
10/24/2002	US20020155395 Method for formation of semiconductor device pattern, method for designing photo mask pattern, photo mask and process for photo mask
10/24/2002	US20020155387 Optical masking; uniform pattern
10/24/2002	US20020155385 Controlling transmission light
10/24/2002	US20020155363 Forming libraries of cells; phase shifting masking
10/24/2002	US20020155362 Exposure of photoresist segemnts to radiation; phase shifting
10/24/2002	US20020155361 Having patterned light shielding film; calibrating variations; plasma etching
10/24/2002	US20020155360 Water solution containing ozone
10/24/2002	US20020155359 Protective coatings during photomasking
10/24/2002	US20020155358 Hinged pellicles and methods of use
10/24/2002	US20020155357 Prioritizing the application of resolution enhancement techniques
10/24/2002	US20020155356 Mask for measuring optical aberration and method of measuring optical aberration
10/24/2002	US20020154285 Mechanized retractable pellicles and methods of use
10/24/2002	US20020153104 Plasma etching chamber and method for manufacturing photomask using the same
10/24/2002	DE10148209A1 Herstellung von optisch abgebildeten Strukturen mit einer Phasenschiebung von transmittierten Lichtanteilen Preparation of optically imaged structures with a phase shift of the transmitted light components
10/24/2002	DE10115888A1 Individual mark calibration method for photo-masks used in semiconductor integrated circuit production where an offset value is first determined by measurement of the same structure optically and using an SEM or AFM
10/24/2002	DE10114861A1 Verfahren und Vorrichtung zum Entlacken eines Bereiches auf einem Maskensubstrat Method and apparatus for stripping paint an area on a mask substrate
10/23/2002	EP1251398A2 Method for printing etch masks using phase-change materials
10/23/2002	EP1251397A2 Production of photoimaged structures with a phase shift of transmitted light portions
10/23/2002	EP1251108A1 Glass substrate and leveling thereof
10/23/2002	CN1376276A A photolithography mask having a subresolution alignment mark window
10/22/2002	US6470489 Design rule checking system and method
10/22/2002	US6469429 Color selection mask for a cathode-ray tube
10/22/2002	US6468701 Stencil mask and method of forming the same
10/22/2002	US6468700 Minimal tensile stress; silicon doped with boron; annealed in nitrogen
10/22/2002	US6467426 Photomask correction device
10/17/2002	WO2002082512A1 Method for forming exposure pattern and exposure pattern
10/17/2002	WO2002082182A2 Alleviating line end shortening in transistor endcaps by extending phase shifters
10/17/2002	WO2002081212A1 Chemical imaging of a lithographic printing plate
10/17/2002	WO2002050612A3 Method and system for improving stability of photomasks
10/17/2002	US20020152454 Design data format and hierarchy management for processing
10/17/2002	US20020152452 Illumination optimization for specific mask patterns
10/17/2002	US20020152451 Method and apparatus for minimizing optical proximity effects
10/17/2002	US20020151157 Mask for correcting optical proximity effect and method of manufacturing the same
10/17/2002	US20020150844 Method for formation of semiconductor device pattern, method for designing photo mask pattern, photo mask and process for photo mask
10/17/2002	US20020150843 Masking; plasma etching; photoresists; one-step
10/17/2002	US20020150841 Photomask set for photolithographic operation
10/17/2002	US20020150824 Mask for adjusting transmittance of a light and method for manufacturing the same
10/17/2002	US20020149783 Method for determining the distance between periodic structures on an integrated circuit or a photomask
10/17/2002	US20020149122 Alignment mark and aligning method using the same
10/17/2002	US20020148978 Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography
10/17/2002	CA2442832A1 Chemical imaging of a lithographic printing plate
10/16/2002	EP1249733A2 Exposure method for forming pattern for IC chips on reticle by use of master masks
10/16/2002	EP1248963A1 Mitigation of substrate defects in reticles using multilayer buffer layers
10/16/2002	CN1375077A Photomask original form having layer for protecting film surface and method for preparing the same, and protective layer-forming liquid for photomask original form
10/16/2002	CN1374561A Exposure method and exposure apparatus
10/15/2002	US6467076 Method and apparatus for submicron IC design
10/15/2002	US6466714 Method of producing phase mask for fabricating optical fiber and optical fiber with bragg's diffraction grating produced by using the phase mask
10/15/2002	US6466373 Trimming mask with semitransparent phase-shifting regions
10/15/2002	US6466315 Method and system for reticle inspection by photolithography simulation
10/15/2002	US6466314 Reticle design inspection system
10/15/2002	US6466304 Illumination device for projection system and method for fabricating
10/15/2002	US6465272 Extreme ultraviolet soft x-ray projection lithographic method and mask devices
10/15/2002	US6465160 After exposure, before development, photoresist is baked for a period of time sufficient to increase the resist contrast value of the resist pattern and thereby suppress the generation of side-lobes

1 ... 173 174 175 176 177 178 179 180 181 182 183 184 185 186 187 188 189 190 191 192 193 ... 249