Patents
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
10/2003
10/07/2003US6630273 Etching silicon layer; forming silicide
10/02/2003WO2003081649A1 Circuit pattern dividing method, stencil mask manufacturing method, stencil mask, and exposure method
10/02/2003WO2003081339A2 Patterning semiconductor layers using phase shifting and assist features
10/02/2003US20030188289 LSI mask manufacturing system, LSI mask manufacturing method and LSI mask manufacturing program
10/02/2003US20030188288 Mask data generating apparatus, a computer implemented method for generating mask data and a computer program for controlling the mask data generating apparatus
10/02/2003US20030188283 Method and apparatus for identifying an identical cell in an IC layout with an existing solution
10/02/2003US20030187750 Photomask supply system with photomask production period shortened
10/02/2003US20030186624 Method of determining a flatness of an electronic device substrate, method of producing the substrate, method of producing a mask blank, method of producing a transfer mask, polishing method, electronic device substrate, mask blank, transfer mask, and polishing apparatus
10/02/2003US20030186557 Fabrication method for lines of semiconductor device
10/02/2003US20030186473 Electrical print resolution test die
10/02/2003US20030186142 Directing optical radiation on the optical medium; propagating a test beam; capturing and measuring a defined characteristic associated with initial grating; comparing; performing grating correction
10/02/2003US20030186138 Resolution of a stepper
10/02/2003US20030186137 Disposable hard mask for phase shift photomask plasma etching
10/02/2003US20030186135 Halftone phase shift photomask and blank for halftone phase shift photomask
10/02/2003US20030186132 Optical alignment test structure patterns on photomasks used to determine field-to-field alignment of a stepper in lithography
10/02/2003US20030186131 For keeping contaminants away from a vicinity of a mask during exposure
10/02/2003US20030186130 Forming repairing pattern as to make obtainable a graytone effect equal to the graytone effect of a regular pattern without restoring the same form as that of the regular pattern in the defective portion
10/02/2003US20030184722 Laser repair system and glass mask used for the same
10/02/2003US20030184721 Mask substrate and its manufacturing method
10/01/2003EP1349091A2 LSI mask manufacturing system, LSI mask manufacturing method and LSI mask manufacturing program
10/01/2003EP1349004A1 Preparation of a flexographic printing plate
10/01/2003EP1349003A2 Method and apparatus for performing rule-based gate shrink utilizing dipole illumination
10/01/2003EP1349002A2 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography
10/01/2003CN1445848A Semiconductor device and its manufacturing method and phase-shift mask
10/01/2003CN1445604A Low cost photo etching technique
10/01/2003CN1122876C Photomask blanks
09/2003
09/30/2003US6628456 Ultraviolet and vacuum ultraviolet antireflection substrate
09/30/2003US6628409 Method for determining the distance between periodic structures on an integrated circuit or a photomask
09/30/2003US6627885 Method of focused ion beam pattern transfer using a smart dynamic template
09/30/2003US6627392 Method of transferring a pattern of high structure density by multiple exposure of less dense partial patterns
09/30/2003US6627365 Photomask and projection exposure apparatus
09/30/2003US6627363 Utilizing vacuum ultraviolet (VUV) exposure to remove halos of carbon deposition in clear reticle repair
09/30/2003US6627362 Correction reduces effects of the mask blank defect on the operation of the mask
09/30/2003US6627361 An illuminated annulus including an inner edge for producing intermediate level of illumination in a pattern area, an outer edge for producing intermediate level of illumination to generate assist feature separated from pattern area
09/30/2003US6627359 Phase-shift photomask manufacturing method and phase-shift photomask
09/30/2003US6627358 Mask repair in resist image
09/30/2003US6627357 Reticle
09/30/2003US6627356 Radiation transparent substrate; forming pattern
09/30/2003US6627355 Providing photomask substrate; applying an opaque material to photomask substrate, wherein a reflection of light at an interface between substrate and opaque material is at least 45 percent and absorption by opaque material is reduced
09/25/2003WO2003079419A1 Mask storage device, exposure device, and device manufacturing method
09/25/2003WO2003079117A1 Full phase shifting mask in damascene process
09/25/2003WO2003079112A1 Method of producing an etch-resistant polymer structure using electron beam lithography
09/25/2003WO2003079111A1 A method and system of lithography using masks having gray-tone features
09/25/2003WO2002054115A3 A self-cleaning optic for extreme ultraviolet lithography
09/25/2003US20030181033 Masks and method for contact hole exposure
09/25/2003US20030180670 Surface treatment of a semiconductor wafer by photomasking, using a metal shields; materials handling
09/25/2003US20030180668 Forming reduced size openings, by flowing the photoresist layer to reduce the size of the opening images; materials handling
09/25/2003US20030180655 Process for making a flexographic printing plate and a photosensitive element for use in the process
09/25/2003US20030180632 Mask for use in lithography, method of making a mask, lithographic apparatus, and device manufacturing method
09/25/2003US20030180631 For use in short-wavelength exposure light source/excimer laser
09/25/2003US20030180630 Halftone type phase shift mask blank and phase shift mask thereof
09/25/2003US20030180629 Comprises phase shift layer of molybdenum silicide oxynitride; semiconductors; photolithography
09/25/2003US20030180628 Comprises controllable transmittance photomask vertically divided into regions having both transparent and dark blocks
09/25/2003US20030180627 Method of producing an etch-resistant polymer structure using electron beam lithography
09/25/2003US20030179251 Preparation of a flexographic printing plate
09/25/2003US20030178703 Patterning semiconductor layers using phase shifting and assist features
09/25/2003DE29924532U1 Photographic illumination apparatus for biological matter has a perforated mask between the light source and the DNA chip with micro shutters operated by electronic control
09/24/2003EP1346262A1 Self-compensating mark arangement for stepper alignment
09/24/2003CN1444097A Mask element, method for preparing mask by using said element and method for preparing photosensitive resin printing plate by sing said mask
09/23/2003US6625802 Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography
09/23/2003US6625801 Dissection of printed edges from a fabrication layout for correcting proximity effects
09/23/2003US6625800 Machine readable medium having stored instructions for simulating inspection of mask patterned according to patterns in design file through mask inspection tool optical channel, and simulating passing of region of light through mask
09/23/2003US6623895 Optically transferring lithography patterns
09/23/2003US6623893 Pellicle for use in EUV lithography and a method of making such a pellicle
09/23/2003US6622547 System and method for facilitating selection of optimized optical proximity correction
09/18/2003WO2003077292A1 Mask, semiconductor device manufacturing method, and semiconductor device
09/18/2003WO2003077038A2 Reduced striae extreme ultraviolegt lithographic elements, a method of manufacturing the same and a method of measuring striae
09/18/2003WO2002075454A3 Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
09/18/2003US20030177467 Opc mask manufacturing method, opc mask, and chip
09/18/2003US20030175623 Method for forming resist pattern
09/18/2003US20030175600 Photomask, method for manufacturing the same, and method for measuring optical characteristics of wafer exposure system using the photomask during operation
09/18/2003US20030174876 Local bias map using line width measurements
09/18/2003US20030174805 X-ray exposure method and semiconductor device manufactured using this X-ray exposure method as well as X-ray mask, X-ray exposure unit and resist material
09/18/2003US20030173675 Semiconductor device, method of manufacturing the same, and phase shift mask
09/18/2003US20030173529 Mask pattern inspection system and mask pattern-inspecting method
09/17/2003EP1344110A1 Mitigation of radiation induced surface contamination
09/17/2003EP1344107A2 Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
09/17/2003CN1442884A Manufacturing method of electron device
09/17/2003CN1442756A Inert gas displacement method and device, exposure device and graticule sheet device
09/16/2003US6622297 Pattern correcting method and pattern verifying method
09/16/2003US6622296 Exposure mask pattern correction method, pattern formation method, and a program product for operating a computer
09/16/2003US6622295 Network-based photomask data entry interface and instruction generator for manufacturing photomasks
09/16/2003US6622288 Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features
09/16/2003US6620561 Method for designing photolithographic reticle layout, reticle, and photolithographic process
09/16/2003US6620559 Photomask, method of lithographically structuring a photoresist layer with the photomask, and method of producing magnetic memory elements
09/16/2003US6620558 Strength, rigidity
09/16/2003US6620557 A main object of the present invention is to provide a photo-mask improved to ensure dimension with high accuracy. An actual pattern is provided on a substrate. A monitor mark for ensuring dimension of the actual pattern is also provided on
09/16/2003US6620556 Cyclic pattern, exposure, devlopment
09/16/2003US6620555 Transmits ultraviolet rays and, particularly, vacuum ultraviolet rays, does not lose the film thickness thereof that stems from the photolysis and, hence, exhibits excellent light resistance. The pellicle is obtained by using, as a
09/16/2003US6619903 System and method for reticle protection and transport
09/16/2003US6619359 Pellicle mounting apparatus
09/15/2003CA2377081A1 Method of producing an etch-resistant polymer structure using electron beam lithography
09/12/2003WO2002088844A3 Alternating phase shift mask
09/12/2003WO2002086622A3 Ion-beam deposition process for manufacturing binary photomask blanks
09/12/2003WO2002086621A3 Ion-beam deposition process for manufacturing multilayered attenuated phase shift photomask blanks
09/12/2003WO2002086620A3 Ion-beam deposition process for manufacturing attenuated phase shift photomask blanks
09/12/2003WO2002054150A3 Optical assist feature for two-mask exposure lithography
09/11/2003US20030170572 Photomasking
09/11/2003US20030170565 Method of removing assist features utilized to improve process latitude
09/11/2003US20030170551 Proximity effect correction apparatus, proximity effect correction method, storage medium , and computer program product