Patents
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
04/2004
04/13/2004US6720114 Combining both circuitry pattern data biasing of masking layer and wet undercut etching of light transmissive substrate material adjacent phase shift regions of mask in fabrication, forming some openings in mask larger than feature to be made
04/08/2004WO2004029716A2 Composition which forms an electrically-conducting protective coat and a method for structuring a photoresist using the protective layer
04/08/2004WO2003107398A3 Techniques to characterize iso-dense effects for microdevice manufacture
04/08/2004WO2003067330A3 Radiation patterning tools, and methods of forming radiation patterning tools
04/08/2004US20040068712 Integrated lithographic layout optimization
04/08/2004US20040067443 Reduce or eliminate ridges at the edges of printing plate, by reducing UV exposure to the edges, spraying masking material, automatic control the spray movement by computer, materials handling
04/08/2004US20040067439 A two laminated layers on an aluminum support, oleophilic top layer is interlayer chemically bonded to the hydrophilic underlayer; photothermography, wear resistance, nonsoilants
04/08/2004US20040067424 Protective device for lithographic masks and method of using lithographic masks
04/08/2004US20040067423 Non-critical feature on a mask utilizing a low-transmission phase-shift mask pattern and a non-phase shifting mask pattern and a critical feature on a mask utilizing a high transmission phase shift mask pattern
04/08/2004US20040067422 Photomask having a transparency-adjusting layer, method of manufacturing the photomask, and exposure method using the photomask
04/08/2004US20040067421 Apparatus and method to improve the resolution of photolithography systems by improving the temperature stability of the reticle
04/08/2004US20040067420 Reduced-stress, electrostatically chuckable reticles for use in extreme ultraviolet and soft X-ray microlithography apparatus and methods
04/08/2004US20040066963 Method of inspecting a mask
04/08/2004US20040065976 Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability
04/08/2004US20040065907 Narrow wire; reducing contactor defects ; using automatic layout tools
04/08/2004US20040065825 Pattern width measuring apparatus, pattern width measuring method, and electron beam exposure apparatus
04/08/2004US20040065817 Collector having unused region for illumination systems using a wavelength less than or equal to 193 nm
04/08/2004DE10244197A1 Zusammensetzung, die eine elektrisch leitfähige Lackschicht bildet und ein Verfahren zur Strukturierung eines Fotoresists unter Verwendung der Lackschicht Composition which forms an electrically conductive coating layer and a method for patterning a photoresist using the varnish layer
04/07/2004EP1406121A1 Reduced-stress, electrostatically chuckable reticles for use in extreme ultraviolet and soft X-ray microlithography apparatus and methods
04/07/2004CN1488085A Fused silica pellicle
04/07/2004CN1487363A Method for designing phase grating pattern, and methodfor producing photomask system
04/07/2004CA2407381A1 Edge treatment of flexographic printing elements
04/06/2004US6717157 Mask inspecting apparatus
04/06/2004US6717097 Data path for high performance pattern generator
04/06/2004US6716558 Resolution enhancement phase shift mask for semiconductors
04/06/2004US6716362 Method for thin film laser reflectance correlation for substrate etch endpoint
04/01/2004WO2004027830A2 Method and system detecting phase defects in phptomasks and wafers
04/01/2004WO2004027684A2 Photolithography mask repair
04/01/2004WO2004027519A2 Dummy patterns for reducing proximity effects and method of using same
04/01/2004WO2004003814A3 Method and system for electronic order entry and automatic processing of photomask orders
04/01/2004WO2003104896A3 Photomask and method for repairing defects
04/01/2004WO2003091949A3 Switched fabric based inspection system
04/01/2004US20040063037 Irradiating far ultraviolet or vacuum ultraviolet exposure light from a second major surface side of a mask substrate; reduction-projecting, by a projection optical system, exposure light which has transmitted through mask substrate
04/01/2004US20040063004 Substrates for in particular microlithography
04/01/2004US20040063002 Photomask having line end phase anchors
04/01/2004US20040063001 Forming anti-reflective coating adjacent to mask substrate; forming absorbing layer; forming a second anti-reflective coating adjacent to the absorbing layer; patterning to form mask pattern; forming photoresist layer over semiconductor
04/01/2004US20040063000 Obtaining data for at least one feature from a layout database; assigning lithographic size identifier to feature; associating twin phase-edge pattern data with the at least one feature; exporting twin phase-edge pattern data to layout
04/01/2004US20040062999 Method for the manufacture of phase shifting masks for EUV lithography
04/01/2004US20040062998 Etched-multilayer phase shifting masks for EUV lithography
03/2004
03/31/2004EP1403663A1 Optical member, process for producing the same, and projection aligner
03/31/2004EP1402963A2 Processing of semiconductor components with dense processing fluids and ultrasonic energy
03/31/2004EP1402316A2 Mask repair with electron beam-induced chemical etching
03/31/2004EP1401923A2 Fluoropolymer compositions comprising a fluor-containing liquid
03/31/2004CN1485769A Motor system for positioning a load
03/31/2004CN1485692A Image display device and projector
03/31/2004CN1485691A Light shield for defining protection ring and method thereof
03/31/2004CN1144265C Electron beam exposure mask and method for making semiconductor device with the same
03/31/2004CN1144264C Mask blank and method of producing mask
03/30/2004US6713883 Mask set for compensating a misalignment between patterns
03/30/2004US6713233 Forming clear fields on a reticle and to reticles formed by electron-beam processing.
03/30/2004US6713231 Method of manufacturing semiconductor integrated circuit devices
03/30/2004US6713218 Covering with lid; sealing from exterior environment
03/30/2004US6713200 Pellicle and method of using the same
03/30/2004US6713136 Pellicle
03/30/2004US6712903 Mask for evaluating selective epitaxial growth process
03/25/2004WO2004025369A2 Method for lithographically structuring a substrate, and lacquer system
03/25/2004WO2004025350A1 Surface-plasmon-generated light source and its use
03/25/2004WO2004006016A3 Mask and manufacturing method using mask
03/25/2004US20040060034 Accelerated layout processing using OPC pre-processing
03/25/2004US20040060033 Mask data processor
03/25/2004US20040058550 Dummy patterns for reducing proximity effects and method of using same
03/25/2004US20040058484 Crystallization apparatus, crystallization method, and phase shifter
03/25/2004US20040058279 For use in electron beam lithography
03/25/2004US20040058255 Substrate topography compensation at mask design: 3D OPC topography anchored
03/25/2004US20040058254 Phase shift mask blank, photo mask blank, and manufacturing apparatus and method of blanks
03/25/2004US20040058253 For use in fabricating semiconductor devices
03/25/2004US20040058252 Providing mask on chromium oxide or chromium mask layer; etching; etching of refractroy metal-silicon-nitride layer using the hard mask in a plasma with a chlorine-containing and/or hydrogen- chloride-containing main gas
03/25/2004US20040057610 Mask defect analysis for both horizontal and vertical processing effects
03/25/2004US20040057030 Reticle-holding pods and methods for holding thin, circular reticles, and reticle-handling systems utilizing same
03/25/2004US20040056215 Electron beam exposure mask, electron beam exposure method, method of fabricating semiconductor device, and electron beam exposure apparatus
03/25/2004US20040055621 Separate sealed pressurized vessels; using critical fluid
03/25/2004DE10333248A1 Optical lithography process for semiconductor chip fabrication, involves exposing photo-resist layer through trim mask to assist in exposing space between features that is defined by phase shifters of phase-shifting mask
03/25/2004DE10241620A1 Lithographic structurization of substrate with electron beam, used for making photo-mask, e.g. of chrome-on-glass type, uses system of electroconductive, water-insoluble lower resist layer and upper layer of electron beam resist
03/24/2004EP1399781A1 Repair of amplitude defects in a multilayer coating
03/24/2004EP1141775B1 Multilayer attenuating phase-shift masks
03/24/2004CN1484281A Using second exposure to assit a PSM exposure in printing tight space adjacent to large feature
03/24/2004CN1484097A Photographic corrosion mfg method for mixing type photo mask
03/23/2004US6711733 System for and method of evaluating mask patterns
03/23/2004US6711732 Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era
03/23/2004US6710855 Projection exposure apparatus and method
03/23/2004US6710851 Multi pattern reticle
03/23/2004US6710847 Exposure method and exposure apparatus
03/23/2004US6710845 Purging gas from a photolithography enclosure between a mask protective device and a patterned mask
03/23/2004US6709807 Process for reducing edge roughness in patterned photoresist
03/23/2004US6709794 Exposure method based on multiple exposure process
03/23/2004US6709793 Method of manufacturing reticles using subresolution test patterns
03/23/2004US6709792 Method for formation of semiconductor device pattern, method for designing photo mask pattern, photo mask and process for photo mask
03/23/2004US6709791 Reducing optical characteristic changes upon irradiation with excimer laser; having protective film containing at least chromium and fluorine
03/23/2004US6709554 Method and apparatus for repairing lithography masks using a charged particle beam system
03/23/2004CA2221906C Optical pellicle mounting system
03/18/2004WO2004023534A1 Alignment method, alignment substrate, production method for alignment substrate, exposure method, exposure system and mask producing method
03/18/2004WO2004023211A2 Exposure method, exposure mask, and exposure apparatus
03/18/2004WO2003077038A3 Reduced striae extreme ultraviolegt lithographic elements, a method of manufacturing the same and a method of measuring striae
03/18/2004US20040054982 Network-based photomask data entry interface and instruction generator for manufacturing photomasks
03/18/2004US20040054633 Method and system for electronic order entry and automatic processing of photomask orders
03/18/2004US20040053169 Process and apparatus for minimizing thermal gradients across an advanced lithographic mask
03/18/2004US20040053145 Optical assist feature for two-mask exposure lithography
03/18/2004US20040053144 Phase shift mask, and exposure method and device manufacturing method using the same
03/18/2004US20040053142 Mask and method for defining a guard ring pattern
03/18/2004US20040053141 First feature of phase shifter is large so the effectiveness of phase shifting is degraded in defining space, degradation of phase shifting and tightness of space cause the space not to print reliabily when exposed alone by phase-shifting mask