G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
11/2004
11/18/2004	US20040229129 Reducing charging effects in photolithography reticle manufacturing
11/18/2004	US20040227945 Wafer, exposure mask, method of detecting mark and method of exposure
11/18/2004	US20040227921 Lithography simulation method, mask pattern correction method, and susbtrate topography correction method
11/18/2004	US20040227919 Projection exposure apparatus and method
11/18/2004	US20040227917 Photomask for exposure to optical near-field, method of controlling optical near-field intensity distribution using the same, pattern preparing method and pattern preparing apparatus
11/18/2004	US20040226814 Electron beam processing for mask repair
11/18/2004	DE10318847A1 Integrated circuit having two circuit parts on the same wafer made using specific first and second exposure masks from sets of masks specific to that circuit part
11/18/2004	DE102004013459A1 Verfahren zur Herstellung einer reflektierenden Maske und Verfahren zur Herstellung eines Halbleiterbauelements A process for producing a reflective mask and method for manufacturing a semiconductor device
11/17/2004	CN1547762A System and method for identifying dummy features on a mask layer
11/17/2004	CN1547682A An integrated circuit using a reflective mask
11/17/2004	CN1547681A Reticle and optical characteristic measuring method
11/16/2004	US6819399 Exposure mask for fabricating liquid crystal display and method for exposing substrate in fabricating liquid crystal display using the mask
11/16/2004	US6818910 Writing methodology to reduce write time, and system for performing same
11/16/2004	US6818515 Method for fabricating semiconductor device with loop line pattern structure
11/16/2004	US6818480 Method of forming a pattern of a semiconductor device and photomask therefor
11/16/2004	US6818389 Utilizes a mask including dense repetitive structures of features that result in a wide array of fine densely populated features on the exposed substrate film.
11/16/2004	US6818385 Phase shifting circuit manufacture method and apparatus
11/16/2004	US6818384 Methods of fabricating microelectronic features by forming intermixed layers of water-soluble resins and resist materials
11/16/2004	US6818362 Photolithography reticle design
11/16/2004	US6818361 Photomasking
11/16/2004	US6818360 Runtime feedback, facilitates improved mask fabrication as compared to conventional systems
11/16/2004	US6818359 Subarray area is defined by densely patterned subarray features, and the at least one periphery area is defined by open areas
11/16/2004	US6818358 Method of extending the areas of clear field phase shift generation
11/16/2004	US6818357 For imaging/patterning a semiconductor wafer, formed via selective etching; photoresists; offset printing
11/16/2004	US6817211 Vacuum ultraviolet transmitting direct deposit vitrified silicon oxyfluoride lithography glass photomask blanks
11/11/2004	WO2004097521A1 Optical proximity effect correction verification method
11/11/2004	WO2004097519A2 Method and mark for metrology of phase errors on phase shift masks
11/11/2004	WO2004066358A3 Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same
11/11/2004	US20040225993 Apparatus for evaluating lithography process margin simulating layout pattern of semiconductor device
11/11/2004	US20040225488 System and method for examining mask pattern fidelity
11/11/2004	US20040224526 Method of producing a reflection type mask blank, method of producing a reflection type mask, and method of producing a semiconductor device
11/11/2004	US20040224508 Apparatus and method for cleaning a substrate using a homogenized and non-polarized radiation beam
11/11/2004	US20040224243 comprises silicon substrate with aperture, silicon oxide film formed on surface, single crystal silicon layer with aperture (for passing exposure beam) formed on film, and stress controlling layer for decreasing warping and high positioning precision; photomasks/photoresists
11/11/2004	US20040224242 forming focus monitor marks and exposure monitor marks on semiconductor wafers/liquid crystal displays, to measure effective exposure
11/11/2004	US20040224241 Thin film transistor array panel, manufacturing method thereof, and mask therefor
11/11/2004	US20040224240 Method of forming and testing a phase shift mask
11/11/2004	US20040224239 steps of mapping a first phase onto a first mask, mapping a second phase onto a second mask, and mapping a trim onto the first mask or second mask (or both)
11/11/2004	US20040224238 maintenance of photomasks by coating photoresist layers on masks, then aligning using optical projectors, exposing and developing; microelectronics
11/11/2004	US20040224237 photomasks/photoresists; scanning electron microscopy; microelectronics
11/11/2004	US20040224236 comprises photoresists/pattern blocking; for production of integrated circuits;
11/11/2004	US20040223206 Optical lithography using both photomask surfaces
11/11/2004	US20040222386 Method for detecting and compensating for positional displacements in photolithographic mask units and apparatus for carrying out the method
11/11/2004	US20040222354 System and method for lithography process monitoring and control
11/11/2004	DE10318562A1 Anordnung zur Inspektion von Objekten, insbesondere von Masken in der Mikrolithographie Arrangement for the inspection of objects, in particular of masks in microlithography
11/11/2004	DE10318560A1 Anordnung zur Inspektion von Objekten, insbesondere von Masken in der Mikrolithographie Arrangement for the inspection of objects, in particular of masks in microlithography
11/11/2004	DE10317893A1 Maskierungsanordnung und Verfahren zum Herstellen von integrierten Schaltungsanordnungen Masking arrangement and method for producing integrated circuit arrangements
11/11/2004	DE10317792A1 Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung Mask blank for use in the EUV lithography and a process for its preparation
11/11/2004	DE102004006586A1 Photomaskenrohling, Photomaske sowie Verfahren und Vorrichtung zu deren Herstellung A photomask blank, a photomask and method and apparatus for the preparation thereof
11/10/2004	EP1475664A2 Mask, mask blank, and methods of producing these
11/10/2004	EP1475663A2 Mask blank for use in EUV-lithography and its process of manufacture
11/10/2004	EP1474542A1 Aperture masks for circuit fabrication
11/10/2004	CN2655294Y Digital holograph twice exposure phase difference amplifier
11/10/2004	CN1544308A Soft lithography and tearing technology for colloid crystal microprocessing of pattern
11/09/2004	US6816233 Continuous multivalued half-tone mask
11/09/2004	US6815148 Prevents dimensional errors caused by the difference in the resist film thickness, which is ascribed to a level-difference portion of an underlying layer.
11/09/2004	US6815128 Box-in-box field-to-field alignment structure
11/04/2004	WO2004095399A2 Providing cutomized text and imagery on organic products
11/04/2004	WO2004095136A2 Arrangement for inspecting objects, especially masks in microlithography
11/04/2004	WO2004038504A3 Nanometer-scale engineered structures, methods and apparatus for fabrication thereof, and applications to mask repair, enhancement, and fabrication
11/04/2004	WO2004027684A3 Photolithography mask repair
11/04/2004	WO2003096121A3 Photolithography mask comprising absorber/phase-shifter elements
11/04/2004	WO2003019626A9 Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask
11/04/2004	US20040221255 Dissection of edges with projection points in a fabrication layout for correcting proximity effects
11/04/2004	US20040221254 Mixed mode optical proximity correction
11/04/2004	US20040219465 Silicon wafer with hole pattern; metal coating as ion beams barrier, heat dissipation; controlling thickness
11/04/2004	US20040219441 Photomask for focus monitoring, method of focus monitoring, unit for focus monitoring and manufacturing method for a unit
11/04/2004	US20040219439 Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device
11/04/2004	US20040219438 Multilayer; transparent substrate with light shielding layout pattern; uniform etching of channels
11/04/2004	US20040219437 EUV (extreme ultraviolet lithography) is transmitted onto reflection mask at grazing incident angle to develop a pattern image to a photoresist layer on surface of wafer; shape is dependent on plurality of reflective regions; controlling surface roughness and defects
11/04/2004	US20040219436 computers and/or software used for adjustment photomasks during fabrication integrated circuits
11/04/2004	US20040219435 Projecting light through a photomask using an optical projection system, sub-resolution features in clear areas adjacent to lines and spaces reduce transparency of the clear areas reduce light scattering and flare, greater degree of defocus in the pattern, less resist stripping
11/04/2004	US20040218185 Position sensor, method for detecting horizontal and vertical position, alignment apparatus including position sensor, and method for horizontal and vertical alignment
11/04/2004	US20040217435 Mask and method for making the same, and method for making semiconductor device
11/04/2004	DE102004014953A1 Verfahren zur Herstellung eines Glassubstrats für einen Maskenrohling und Verfahren zur Herstellung eines Maskenrohlings A process for producing a glass substrate for a mask blank and process for the production of a mask blank
11/03/2004	EP1473598A2 Lithographic apparatus, device manufacturing methods, mask and method of characterising a mask and/or pellicle
11/03/2004	EP1473596A2 Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
11/03/2004	EP1472575A2 Radiation patterning tools, and methods of forming radiation patterning tools
11/03/2004	CN1542563A Image setting apparatus having drum simulating supports
11/03/2004	CN1542553A Lithographic apparatus, device manufacturing methods, mask and method of characterising a mask and/or pellicle
11/03/2004	CN1542026A Amorphous perfluorinated polymers
11/03/2004	CN1174286C Diazo-contg. photosensitive meterial
11/02/2004	US6813759 Adjusting trim without reducing image contrast or process window size
11/02/2004	US6813756 Method of automatic layout design for LSI, mask set and semiconductor integrated circuit manufactured by automatic layout design method, and recording medium storing automatic layout design program
11/02/2004	US6813058 Method and apparatus for personalization of semiconductor
11/02/2004	US6813044 Narrow band, anisotropic stochastic halftone patterns and methods of creating and using the same
11/02/2004	US6812477 Integrated circuit identification
11/02/2004	US6812474 Pattern generation method and apparatus using cached cells of hierarchical data
11/02/2004	US6812473 Electron beam drawing mask blank, electron beam drawing mask, and method of manufacturing the same
11/02/2004	US6812155 Pattern formation method
11/02/2004	US6811959 Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks
11/02/2004	US6811954 Semiconductor integrated circuit device and method of manufacturing the same, and method of manufacturing masks
11/02/2004	US6811945 Method of producing pattern-formed structure and photomask used in the same
11/02/2004	US6811939 Focus monitoring method, focus monitoring system, and device fabricating method
11/02/2004	US6811936 Silicon oxygen fluoride (siof) membrane that can be used as a pellicle for radiation wavelengths of approximately 157 nanometers, does not degrade after use in a 157 nm lithographic system and can sustain normal handling
11/02/2004	US6811935 Includes identifying features for which phase shifting can be applied, automatically mapping the phase shifting regions for implementation of such features, resolving phase conflicts, applying sub-resolution assist features
11/02/2004	US6811934 Field correction of overlay error
11/02/2004	US6811933 Variation in light intensity; high density images; photolithography
11/02/2004	US6811932 Method and system for determining flow rates for contact formation
11/02/2004	US6811931 Photomask original form having layer for protecting film surface and method for preparing the same, and protective layer-forming liquid for photomask original form
10/2004
10/28/2004	WO2004093178A1 Method for etching chromium thin film and method for producing photomask

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