Patents
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
04/2005
04/06/2005CN1603949A Photomask, photomask manufacturing method and semiconductor device manufacturing method using photomask
04/06/2005CN1603948A Attenuating phase shift mask blank and photomask
04/06/2005CN1196175C Method of manufacture for transfer mask
04/06/2005CN1196031C Method for error reduction in lithography
04/05/2005US6877151 Photomask visual inspection system
04/05/2005US6876792 Phase mask for forming diffraction grating, and optical fiber and optical waveguide having diffraction grating duplicated using the phase mask
04/05/2005US6876437 Illumination optical system, exposure method and apparatus using the same
04/05/2005US6876092 Substrate provided with an alignment mark, method of designing a mask, computer program, mask for exposing said mark, device manufacturing method, and device manufactured thereby
04/05/2005US6876024 Method and layout for MOS capacitors with phase shifted layers
04/05/2005US6875952 Substrate having repaired metallic pattern and method and device for repairing metallic pattern on substrate
04/05/2005US6875546 Method of patterning photoresist on a wafer using an attenuated phase shift mask
04/05/2005US6875545 Performing a first exposure of the substrate utilizing a x-dipole illumination, and a second exposure of the substrate utilizing a y-dipole illumination; using optical proximity correction
04/05/2005US6875544 Method for the fabrication of three-dimensional microstructures by deep X-ray lithography
04/05/2005US6875543 Writing pattern; reflective multilayer coating
04/05/2005US6874419 Providing customized text and imagery on organic products
03/2005
03/31/2005WO2005029183A2 Method and apparatus for protecting a reticle used in chip production from contamination
03/31/2005WO2005029182A2 Method and apparatus for protecting a reticle used in chip production from contamination
03/31/2005WO2005029181A2 Method and apparatus for compensating for the effects of gravity on a pellicle used for protecting a reticle from contamination
03/31/2005WO2005029180A2 Applications of semiconductor nano-sized particles for photolithography
03/31/2005WO2004088425A3 Contact masks and lithographic patterning methods using said masks
03/31/2005WO2004021049A3 Optical compensation in high numerical aperture photomask inspection systems for inspecting photomasks through thick pellicles
03/31/2005US20050069789 Photomasking
03/31/2005US20050069788 Photomask, photomask manufacturing method and semiconductor device manufacturing method using photomask
03/31/2005US20050069787 Mask blanks and method of producing the same
03/31/2005US20050069786 Stencil mask, production method thereof, exposure apparatus, exposure method and electronic device production method
03/31/2005US20050069785 determining degradation by printing on a wafer with a stepper a mask image of monitor structures located in a transition between clear and opaque regions, one stepping distance apart; measuring the displacement between structures; determining pellicle degradation by dispalcement from each other
03/31/2005US20050069783 masking; selectively coding the spaced regions to define a masked read only memory (ROM) structure that causes optical interference; illumination; development; improved circuit density and reliability; miniaturization; integrated circuits
03/31/2005US20050069782 Each full-depth producing pattern includes an area of UV light-blocking material on a transparent plate that has a smaller dimension equal to or greater than minimum resolvable size; partial-depth producing pattern has an area of UV light-blocking material with smaller dimension less than minimum size
03/31/2005US20050069781 conventional exposure, development and baking processes; photomask includes an array of first and second phase shift regions and a non phase shift region; elimination of side-lobe effects; integrated circuits; photolithography
03/31/2005US20050067103 Interferometer endpoint monitoring device
03/31/2005DE10339888A1 Mask used in photolithographic process for manufacturing integrated circuits, has absorbent layer with more readily-etched layer near substrate
03/31/2005DE10339514A1 Light projection system for use during manufacture of semiconductor elements on substrate has lamp shining light through slit onto mask or reticle scanned in front of lens
03/31/2005DE102004035617A1 Verfahren zur Herstellung von Substraten für Fotomaskenrohlinge Process for the preparation of substrates for photomask blanks
03/30/2005EP1519226A2 Stencil mask, production method thereof, exposure apparatus, exposure method and electronic device production method
03/30/2005EP1518150A2 Method of using an amorphous carbon layer for reticle fabrication
03/30/2005CN1602450A Method and apparatus for image formation
03/30/2005CN1602449A Method of enhancing phase shift masks
03/30/2005CN1602448A Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions
03/30/2005CN1601697A Method of forming light resist pattern by using reflect nearby effect
03/30/2005CN1601387A Self-aligning method for outskirt state phase shifting light shade
03/29/2005US6873720 System and method of providing mask defect printability analysis
03/29/2005US6872510 Photomask having small pitch images of openings for fabricating openings in a semiconductor memory device and a photolithographic method for fabricating the same
03/29/2005US6872508 Exposure method and method of manufacturing semiconductor device
03/29/2005US6872497 Reflective mask for short wavelength lithography
03/29/2005US6872496 Providing transparent substrate; forming first thickness of first aluminum-silicon oxide blanket attenuating phase shifting layer; forming second thickness of second aluminum-silicon oxide blanket attenuating phase shifting
03/29/2005US6872495 Method for fabricating a lithographic reflection mask in particular for the patterning of a semiconductor wafer, and a reflection mask
03/29/2005US6872494 Photomask for efficiently performing simulation and forming suitable resist patterns
03/29/2005US6872320 Maintaining surface to be etched below freezing temperature of phase-change masking material; ejecting in liquid form droplets of phase change masking material in a predetermined pattern; etching surface to remove material; removing mask
03/24/2005WO2005026837A2 Imprint lithographic method, and device and stamp for use in imprint lithography
03/24/2005WO2005026836A2 Laminated photosensitive relief printing original plate and method for producing the relief printing plate
03/24/2005WO2005026706A1 Method for high efficiency multipass article inspection
03/24/2005US20050066300 Method for interlayer and yield based optical proximity correction
03/24/2005US20050064728 Methods for forming a photoresist pattern using an anti-optical proximity effect
03/24/2005US20050064304 Phase shifting for changing the phase of transmitted exposure light, having an optical transmissivity different from the mask substrate; etching the substrate to change the phase of the transmitted light; shielding layer is formed of chromium or molybdenum silicon oxynitride; semiconductor
03/24/2005US20050064303 A pattern of a fine opening provided in the light blocking layer; optical head; for generating light; semiconductor processing for improve in fineness of microlithography
03/24/2005US20050064302 Method and system for forming a mask pattern, method of manufacturing a semiconductor device, system forming a mask pattern on data, cell library and method of forming a photomask
03/24/2005US20050064301 Forming a first fine pattern which has a fine opening, having a size of not more than a wavelength of exposure light; forming a second mask; for use with microprocessing in a short time; microlithography
03/24/2005US20050064300 The light-shielding layer is patterned to form a main pattern and a phantom pattern; eliminate optical proximity effects; substrate with the phantom pattern can be narrower; etched to form trenches in the substrate; photolithographic process to make semiconductor wafer
03/24/2005US20050064299 Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same
03/24/2005US20050064298 Multilayer coatings for EUV mask substrates
03/24/2005US20050064296 Removing the ions from the quartz blank by incineration process
03/24/2005US20050064054 Pattern forming apparatus
03/24/2005US20050063030 Method of hologram exposure, mask for hologram exposure, semiconductor device, and electronic equipment
03/24/2005US20050062947 Near-field exposure apparatus
03/24/2005DE10340611A1 Lithographic mask for making integrated semiconductor circuit by photolithographic process, comprising angular structure element formed by two opaque segments, with adjacent transparent structure at convex section of angular structure
03/24/2005DE10340608A1 Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht Polymer formulation and method for producing a dielectric layer
03/24/2005DE10338019A1 Verfahren zum hochaufgelösten Bearbeiten dünner Schichten mit Elektronenstrahlen A method for high-resolution processing of thin films with electron
03/24/2005DE102004035559A1 Verfahren zur Auswahl von Substraten für Fotomaskenrohlinge Procedures for the selection of substrates for photomask blanks
03/23/2005EP1517180A2 Method of producing a pattern and photomask used in the same
03/23/2005EP1517177A2 Method of producing a pattern and photomask used in the same
03/23/2005EP1516863A1 Ultra low thermal expansion transparent glass-ceramics
03/23/2005EP1516745A1 Photosensitive resin composition for original printing plate capable of being carved by laser
03/23/2005EP1177428B1 Inspection systems performing two-dimensional imaging with line light spots
03/23/2005CN1599883A Photosensitive flexible printing element and method for the production of newspaper flexible printing plates
03/23/2005CN1599029A Template padding method for padding edges of holes on semiconductor masks
03/22/2005US6871338 Semiconductor integrated circuit device and method for designing the same
03/22/2005US6871337 Optimized by determining an appropriate illumination mode based on diffraction orders of the reticle, and the autocorrelation of the projection optic; improved depth of focus
03/22/2005US6870168 Varying feature size in resist across the chip without the artifact of “grid-snapping” from the mask writing tool
03/22/2005US6869738 The serifs or pattern combine to produce an optical proximity correction that reduces corner rounding and increases edge straightness in the resist pattern
03/22/2005US6869736 Halftone phase shift photomask and blank for halftone phase shift photomask
03/22/2005US6869735 Method of pattern layout of a photomask for pattern transfer
03/22/2005US6869734 EUV reflective mask having a carbon film and a method of making such a mask
03/22/2005US6869733 Pellicle with anti-static/dissipative material coating to prevent electrostatic damage on masks
03/22/2005US6869732 Glass substrate for photomasks and preparation method
03/22/2005US6869155 Method and apparatus for masking a workpiece with ink
03/17/2005WO2005024520A2 Phototool coating
03/17/2005WO2005024519A1 Optical proximity effect correction processing method allowing for dummy pattern
03/17/2005WO2005024518A2 Phase shift mask blank with increased uniformity
03/17/2005WO2005023940A2 Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit
03/17/2005WO2005023822A1 Perfluoropolyether amide-linked phosphonates, phosphates, and derivatives thereof
03/17/2005WO2003019626A3 Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask
03/17/2005US20050060682 Resolving phase-shift conflicts in layouts using weighted links between phase shifters
03/17/2005US20050058915 Photomask
03/17/2005US20050058914 Pattern designing method, photomask manufacturing method, resist pattern forming method and semiconductor device manufacturing method
03/17/2005US20050058913 Stencil mask, charged particle irradiation apparatus and the method
03/17/2005US20050058912 First phase shift section and the half tone section are shifted 180 degrees with the second phase shift region; assists in balancing the intensity between light passing thru the first and second phase shift sections
03/17/2005US20050058836 Sublimating process for cleaning and protecting lithography masks
03/17/2005US20050057998 Semiconductor device with loop line pattern structure, method and alternating phase shift mask for fabricating the same
03/17/2005US20050057796 Ultra-broadband UV microscope imaging system with wide range zoom capability
03/17/2005US20050057740 Lithography tool having a vacuum reticle library coupled to a vacuum chamber