Patents
Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
02/2005
02/03/2005US20050026090 Method for high aspect ratio pattern transfer
02/03/2005US20050026086 Photolithographic techniques for producing angled lines
02/03/2005US20050026053 Photolithography; semiconductors, integrated circuits; detecting defects
02/03/2005US20050026052 Contact layouts; phase shifting; rotation ; photolithography; integrated circuits
02/03/2005US20050026050 Exposure mask and mask pattern production method
02/03/2005US20050026049 Method for forming an opening on an alternating phase shift mask
02/03/2005US20050026048 Proximity correcting lithography mask blanks
02/03/2005US20050026047 comprises line-shaped features and ladder-shaped assists; improved image contrast, resolution, and uniformity
02/03/2005US20050026046 Multilayer reflective extreme ultraviolet lithography mask blanks
02/03/2005US20050026045 consists of a mask barrier and a set of contact barriers; mask barrier surrounds a mask formed on a reticle, while the contact barriers are affixed between the mask and contact spots on a reticle
02/03/2005US20050025959 Hard pellicle and fabrication thereof
02/03/2005US20050025351 Method for inspecting a defect in a photomask, method for manufacturing a semiconductor device and method for producing a photomask
02/03/2005US20050025279 Non absorbing reticle and method of making same
02/03/2005US20050024622 Exposure mask and method for divisional exposure
02/03/2005DE10330907A1 Vorrichtung und Verfahren zum Bearbeiten einer Maskenvorlage für die Halbleiterherstellung Apparatus and method for processing a mask pattern for semiconductor manufacturing
02/03/2005DE10330467A1 Verfahren zur Erstellung von alternierenden Phasenmasken Process for the preparation of alternating phase masks
02/02/2005EP1503403A1 Reticle and optical characteristic measuring method
02/02/2005EP1502153A2 Photolithography mask comprising absorber/phase-shifter elements
02/02/2005EP1410095A4 Optical element with full complex modulation
02/02/2005EP0941865B1 Process film, process ink, and platemaking method and system using the film
02/02/2005CN1575437A Method for obtaining elliptical and rounded shapes using beam shaping
02/02/2005CN1574364A Memory array with loop line pattern structure and fabricating method thereof
02/02/2005CN1574223A Photomask, pattern formation method using photomask and mask data creation method for photomask
02/02/2005CN1574217A Semiconductor design layout pattern formation method and graphic pattern formation unit
02/02/2005CN1573561A Maskless lithography systems and methods utilizing spatial light modulator arrays
02/02/2005CN1573558A Light mask manufacturing method capable of avoiding electron beam offset due to charge effect
02/02/2005CN1573557A Method for removing shading defects of light mask and semiconductor device manufacturing method thereof
02/02/2005CN1573554A Method of optical proximity correction design for contact hole mask
02/02/2005CN1573541A Method for coating a substrate for EUV lithography and substrate with photoresist layer
02/02/2005CN1573540A Water soluble negative photoresist and method for forming photoresist pattern
02/02/2005CN1573538A Attenuated phase shifting mask having embedded bi-layer structure for and method for making same
02/02/2005CN1187655C Retaining device for photo blanks
02/01/2005US6851103 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography
02/01/2005US6850858 Method and apparatus for calibrating a metrology tool
02/01/2005US6850676 Optical fiber block photo mask for loss reduction
02/01/2005US6850321 Dual stage defect region identification and defect detection method and apparatus
02/01/2005US6849937 Variable rotational assignment of interconnect levels in integrated circuit fabrication
02/01/2005US6849540 Method of fabricating semiconductor integrated circuit device and method of producing a multi-chip module that includes patterning with a photomask that uses metal for blocking exposure light and a photomask that uses organic resin for blocking exposure light
02/01/2005US6849393 Phase shifting lithographic process
02/01/2005US6849391 Alkali-soluble novolak resin and a photosensitive compound having a naphthoquinone diazide group; absorption coefficient alpha of the photoresist for an exposure light falls in the range of 0.5<alpha</=7
02/01/2005US6849365 Two multilayer layers cover the substrate, one is construction layer, the other is destructive layer, because the interaction of the two multilayer layers, yields the desired local absorption of the radiation on mask; photolithography
02/01/2005US6849364 Mask for fabricating semiconductor components
02/01/2005US6849363 Method for repairing a photomask, method for inspecting a photomask, method for manufacturing a photomask, and method for manufacturing a semiconductor device
02/01/2005US6849308 Method of forming a masking pattern on a surface
02/01/2005US6848277 Projection lithography photomasks and method of making
01/2005
01/27/2005WO2005008754A1 Flare measurement method, exposure method, and flare measurement mask
01/27/2005WO2005008747A2 Methods and systems for inspection of wafers and reticles using designer intent data
01/27/2005WO2005008548A1 Method of transmitting cad data to a wafer inspection system
01/27/2005WO2005008335A2 Method for analysing objects in microlithography
01/27/2005WO2004106580B1 Mask retaining device
01/27/2005US20050022150 Optical proximity correction method
01/27/2005US20050020083 Method of making photomask blank substrates
01/27/2005US20050019708 Phase-shifting mask and method of forming pattern using the same
01/27/2005US20050019703 Photocatalysts; color filters
01/27/2005US20050019678 Method of selecting photomask blank substrates
01/27/2005US20050019677 quadrangular, which has a pair of strip-like regions with a 2 mm edge portion excluded at each end; good surface flatness at the time of wafer exposure
01/27/2005US20050019676 Method of selecting photomask blank substrates
01/27/2005US20050019675 Lithographic apparatus, device manufacturing method, and mask
01/27/2005US20050019674 Suppress the loading effect and achieve a high CD (critical dimension) accuracy when forming a highly accurate pattern by dry etching; photomask blank having, on the light-transmissive substrate, a chromium film, an etching mask film having a resistance against etching of the chromium film, and a resist
01/27/2005US20050019673 Attenuated film with etched quartz phase shift mask
01/27/2005US20050016468 Compensation frame for receiving a substrate
01/27/2005US20050016445 Method for producing diamond film
01/27/2005DE10332059A1 Analysis of microlithography objects, especially masks using aerial image measurement systems, whereby a detected image is corrected using a transfer function correction filter
01/27/2005DE10327613A1 Formation of preferably square hole on an alternating phase mask useful in electronics for the lithographic structuring of contact planes in preparation of integrated circuits, and in semiconductor technology
01/26/2005EP1500974A2 A method, program product and apparatus of simultaneous optimization for na-sigma exposure settings and scattering bars opc using a device layout
01/26/2005EP1500718A1 Method for producing diamond film
01/26/2005EP0898732B1 Black-and-white photothermographic and thermographic elements comprising 3-heteroaromatic-substituted acrylonitrile compounds as co-developers
01/26/2005CN1570760A Correction for optical proximity effect of contact hole, mask and semiconductor device manufacturing method
01/25/2005US6848096 Apparatus for correcting data of layout pattern
01/25/2005US6847434 Method and apparatus for a pellicle frame with porous filtering inserts
01/25/2005US6846598 Overcoating with photoresist forming light shielding patterns; transferring pattern
01/25/2005US6846597 Photomask inspecting method
01/25/2005US6846596 Design of integrated circuits; photolithography; calibration
01/25/2005US6846595 Method of improving photomask geometry
01/20/2005WO2004065287A3 A method of patterning photoresist on a wafer using a transmission mask with a carbon layer
01/20/2005US20050015233 Method for computing partially coherent aerial imagery
01/20/2005US20050015165 Semiconductor production system
01/20/2005US20050014076 Method of generating mask distortion data, exposure method and method of producing semiconductor device
01/20/2005US20050014075 Phase edge darkening binary masks
01/20/2005US20050014074 Generating mask patterns for alternating phase-shift mask lithography
01/20/2005US20050013972 Large-size substrate
01/20/2005US20050013927 Manufacturing method for display device
01/20/2005US20050011862 Method and apparatus for dry-etching half-tone phase-shift films, half-tone phase-shift photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereof
01/20/2005US20050011377 Methods and systems for providing an image on an organic product
01/19/2005EP1498936A1 Reflection type mask blank and reflection type mask and production methods for them
01/19/2005EP1498775A2 Large-size substrate for photolithographic applications
01/19/2005EP1498750A1 Reflection element of exposure light and production method therefor, mask, exposure system, and production method of semiconductor device
01/19/2005EP1498262A1 Method and apparatus for producing a screen printing stencil and a screen with a stencil
01/19/2005EP1497699A1 Attenuated embedded phase shift photomask blanks
01/19/2005EP1194803B1 Broad band ultraviolet catadioptric imaging system
01/19/2005CN1567088A X-ray mask and quartz ring ultraviolet solidifying apparatus and method for using
01/19/2005CN1185684C Method of preparing charged particle beam drawing data
01/19/2005CN1185549C Optical nearby correcting method based on contact hole model
01/19/2005CN1185512C Optical film
01/18/2005US6845497 Method for fabrication of patterns and semiconductor devices
01/18/2005US6844272 Correction of localized shape errors on optical surfaces by altering the localized density of surface or near-surface layers
01/18/2005US6844235 Reticle repeater monitor wafer and method for verifying reticles
01/18/2005US6844123 System for production of large area display panels with improved precision
01/18/2005US6844119 Alternately laminating, on a transparent substrate, thin layers made of tintanium nitride and thin layers made of silicon nitride to form multilayered semi-transmission film, heating the film at 300 degree C. or higher
01/18/2005US6844118 Photolithography; forming semiconductors