G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849)
12/2004
12/02/2004	WO2004104700A1 Pattern dimension correction device and method, photo mask, and test photo mask
12/02/2004	WO2004104699A1 Correction of pattern dimension
12/02/2004	WO2004103671A1 Method of decorating surface of mold and mold
12/02/2004	US20040243967 Semiconductor design layout pattern formation method and graphic pattern formation unit
12/02/2004	US20040243320 Visual inspection and verification system
12/02/2004	US20040242820 preparing transparent films at 157 nm; solutions of perfluorodioxole polymers with stable, nonionic end groups in perfluorinated solvents are sintered and pelletized for infrared spectrum analysis
12/02/2004	US20040241596 Forming a resist film on a substrate; exposing an element formation region of resist film at a first exposure amount able to develop resist film via a mask; exposing an unexposed region other than the element formation region; developing resist film
12/02/2004	US20040241595 Detecting at least one parameter for the characterization of the mask,automatically selecting a stored correction data record from a correction database; measuring optical properties of a structure of the mask using a measuring system; combining measurement results; storing a measurement data record
12/02/2004	US20040241592 Irradiating light onto a member having a modulation profile smaller than the wavelength of irradiated light and forming a distribution of optical near-field corresponding to surface of said member; introducing material gas to be used for a photochemical reaction; causing photochemical reaction
12/02/2004	US20040241559 Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks
12/02/2004	US20040241558 Focus detection structure
12/02/2004	US20040241557 Mask, mask blank, photosensitive material therefor and fabrication thereof
12/02/2004	US20040241556 Pattern transferable onto image-receiving substrate when exposed to ultraviolet radiation in lithography; phase shifting; plasma enhanced chemically vapor deposited boro-germano-silicate photosensitive films from tetramethoxygermanium
12/02/2004	US20040241555 Photoresist layer is exposed with a mask; setting transmittance of side-lobe region lower than transmittance of intermediate region.
12/02/2004	US20040241554 Substrate having first index of refraction and level of transmittance to a wavelength of light; second portions of substrate are impregnated with dope; opaque layer rising above planar upper surface; image resolution
12/02/2004	US20040239908 Encapsulation; reacting anionic and cationic polymers; crosslinking using an aldehyde
12/02/2004	US20040239844 Generation of pattern data free from any overlapping or excessive separation of dot patterns adjacent to each other
12/02/2004	US20040238969 Bump structure of a scattering reflective board and method for manufacturing the bump structure
12/02/2004	US20040238759 Stencil mask for ion implantation
12/02/2004	US20040238502 Method for suppressing energy spikes of a partially-coherent beam using triangular end-regions
12/02/2004	DE10320679A1 Process for treating a workpiece, especially a substrate for a mask for producing semiconductor elements, comprises using water in a super-critical state
12/01/2004	EP1482374A2 Method of generating mask distortion data, exposure method and method of producing semiconductor device
12/01/2004	EP1482366A2 Maskless lithography using spatial light modulators
12/01/2004	EP1482365A2 Method for the generation of variable pitch nested lines and/or contact holes using fixed size pixels for direct-write lithographic systems
12/01/2004	EP1481288A2 Reduced striae extreme ultraviolet lithographic elements, a method of manufacturing the same and a method of measuring striae
12/01/2004	CN1552000A Removable optical pellicle
12/01/2004	CN1551310A Method for manufacturing semiconductor, electrooptical device, integrated circuit and electronic device
12/01/2004	CN1551169A 电子束记录衬底 Electron beam recorder substrate
12/01/2004	CN1550906A Method for the generation of variable pitch nested lines and/or contact holes using fixed size pixels for direct-write lithographic systems
12/01/2004	CN1550902A Pattern generator mirror configurations
12/01/2004	CN1550900A Method and apparatus for providing optical proximity correction features to a reticle pattern for optical lithography
12/01/2004	CN1550890A Method for manufacturing lithographic pringting apparatus and equipment
11/2004
11/30/2004	US6826742 Semiconductor device, designing method thereof, and recording medium storing semiconductor designing program
11/30/2004	US6826442 Processing system including exposure apparatus, reticle stocker having sealing member with first and second gates, controller for controlling atmosphere in interior of sealing member, path for transferring reticle to and from stocker
11/30/2004	US6825939 Method and measuring arrangement for detecting an object
11/30/2004	US6825913 Microlithography; illumination system provides polarized light and magnesium fluoride is oriented with crystal principal axis in direction of optical axis
11/30/2004	US6825468 Fine stencil structure correction device
11/30/2004	US6824958 Preparing a plurality of first photomasks including one or more resist masks; and transferring each pattern of said photomasks onto a second photomask by reduced projection exposure.
11/30/2004	US6824937 Method and system for determining optimum optical proximity corrections within a photolithography system
11/30/2004	US6824933 Mask for manufacturing semiconductor devices, method for fabricating the same, and exposure method for the same
11/30/2004	US6824932 Self-aligned alternating phase shift mask patterning process
11/30/2004	US6824931 Verification photomask
11/30/2004	US6824930 Ultraviolet and vacuum ultraviolet transparent polymer compositions and their uses
11/25/2004	WO2004102645A1 Exposure method, mask, semiconductor device manufacturing method, and semiconductor device
11/25/2004	WO2004034424A3 A method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability
11/25/2004	US20040234900 Method and apparatus for producing rectangular contact holes utilizing side lobe formation
11/25/2004	US20040234897 Water soluble negative tone photoresist
11/25/2004	US20040234890 Hydrophilic water swelling particles in nonaqeuos solvent; lithography printing plates
11/25/2004	US20040234870 Mask blank for use in EUV lithography and method for its production
11/25/2004	US20040234869 sub-wavelength features which have a depth corresponding to an etch depth of primary features on the mask, but which produce an effective phase shift of about 60 to 120 degrees; duty cycle of 50%; photolithography
11/25/2004	US20040234868 Novel modification of mask blank to avoid charging effect
11/25/2004	US20040233535 Optical device with enhanced mechanical stability operating in the extreme ultraviolet and lithography mask comprising such a device
11/25/2004	US20040233504 Optical element with full complex modulation
11/25/2004	US20040233411 Projection exposure apparatus and method
11/25/2004	US20040233410 Projection exposure apparatus and method
11/25/2004	US20040232313 System and method for lithography process monitoring and control
11/25/2004	US20040231971 Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank
11/25/2004	DE10319370A1 Verfahren zum Erfassen und Kompensieren von Lageverschiebungen bei photolithographischen Maskeneinheiten und Vorrichtung zur Durchführung des Verfahrens A method for detecting and compensating for positional shifts in photolithographic mask units, and apparatus for carrying out the method
11/25/2004	DE102004014244A1 Winkelige Phasenform für eine verminderte Beeinträchtigung des Layouts Angular phase form of decreased degradation of the layout
11/24/2004	EP1480263A1 Method of treating surface, semiconductor device, process for producing semiconductor device, and apparatus for treatment
11/24/2004	EP1480081A2 Use of water soluble negative tone photoresist for producing closely spaced contact holes
11/24/2004	EP1480078A1 Method for coating a substrate for EUV lithography and substrate with photoresist layer
11/24/2004	EP1480077A2 Device and process for manufacturing embossed substrates
11/24/2004	EP1478976A1 Critical dimension control using full phase and trim masks
11/24/2004	EP1164431B1 Pellicle
11/24/2004	CN1549954A Fluoropolymer-coated photomasks for photolithography
11/24/2004	CN1549054A Microimage producing process
11/24/2004	CN1549053A Optical hood for reducing lens aberration and pattern shifting and method
11/24/2004	CN1177352C Exposure mask and its mfg. method
11/23/2004	US6823503 Method and apparatus for creating a phase-shifting mask for a photolithographic process
11/23/2004	US6822669 Method and multibeam scanning device for the ablation of flexo printing plates by laser engraving
11/23/2004	US6821711 Manufacturing method of a phase-shift mask, method of forming a resist pattern and manufacturing method of a semiconductor device
11/23/2004	US6821693 Method for adjusting a multilevel phase-shifting mask or reticle
11/23/2004	US6821690 Photomask and method for forming micro patterns of semiconductor device using the same
11/23/2004	US6821689 Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
11/23/2004	US6821688 Focus ion beams; accuracy detection, repair defects
11/23/2004	US6821687 Photo mask for fabricating semiconductor device having dual damascene structure
11/23/2004	US6821686 Method of defect repairing in graytone part in graytone mask
11/23/2004	US6821685 Block mask making method, block mask and exposure apparatus
11/23/2004	US6821683 Miniaturization, high density semiconductor patterns
11/23/2004	US6821682 Repairing defects in a multilayer coating that is deposited onto a reticle blank used in an extreme ultraviolet lithography
11/23/2004	US6820551 Method and system for electronically generating exposure scale for laser imaging devices
11/18/2004	WO2004099879A2 Method of detecting relative position of exposure mask and object to be exposed, alignment method, and exposure method using the same
11/18/2004	WO2004099875A2 Etching of chromium layers on photomasks utilizing high density plasma and low frequency rf bias
11/18/2004	US20040230939 Calculating method, verification method, verification program and verification system for edge deviation quantity, and semiconductor device manufacturing method
11/18/2004	US20040230937 Creating photolithographic masks
11/18/2004	US20040230936 Selective promotion for resolution enhancement techniques
11/18/2004	US20040230883 Method, system, apparatus and program for programming defect data for evaluation of reticle inspection apparatus
11/18/2004	US20040229472 Exposure mask pattern formation method, exposure mask, and semiconductor device production method employing the exposure mask
11/18/2004	US20040229410 Pattern forming method, method of manufacturing thin film transistor substrate, method of manufacturing liquid crystal display and exposure mask
11/18/2004	US20040229169 produce small features on a reticle with precise critical dimensions, using a technique suitable to a variety of energy sources; uses resist and transfer layers over a workpiece substrate
11/18/2004	US20040229138 Exposure method for correcting line width variation in a photomask
11/18/2004	US20040229137 Method for correcting characteristics of attenuated phase-shift mask
11/18/2004	US20040229136 Photo mask blank and photo mask
11/18/2004	US20040229135 Multiple exposure method for circuit performance improvement
11/18/2004	US20040229134 Phase-shift mask
11/18/2004	US20040229133 Method of optical proximity correction design for contact hole mask
11/18/2004	US20040229132 Mechanized retractable pellicles and methods of use
11/18/2004	US20040229131 Photomask pattern
11/18/2004	US20040229130 Configuring an array of micro-mirrors in a deep ultraviolet maskless photolithography system by generating an ideal mask layout representative of image characteristics associated with a desired image; next, an equivalent mask is produced in accordance with an average intensity of the ideal mask layout

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