Patents for G03F 1 - Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof (24,849) |
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06/28/2005 | US6911285 Sidelobe correction for attenuated phase shift masks |
06/28/2005 | US6911284 Photomask and method for manufacturing the photomask |
06/28/2005 | US6911283 Thin film coupled to a first end of the frame; stress reduction |
06/23/2005 | WO2005057438A2 Flagging reticle layout data |
06/23/2005 | WO2005057282A1 Method and device for creating print data, program for creating print data, and computer-readable recording medium containing the program |
06/23/2005 | US20050138598 Method for providing layout design and photo mask |
06/23/2005 | US20050138597 Method and apparatus for optimizing fragmentation of boundaries for optical proximity correction (OPC) purposes |
06/23/2005 | US20050138596 Gradient method of mask edge correction |
06/23/2005 | US20050136582 Method and device for automated layer generation for double-gate FinFET designs |
06/23/2005 | US20050136341 Designing and forming the auxiliary pattern according to the density function so as to prevent local or global variations between the desired critical dimension (CD) and actual CD from occurring |
06/23/2005 | US20050136340 Lithographic apparatus and methods, patterning structure and method for making a patterning structure, device manufacturing method, and device manufactured thereby |
06/23/2005 | US20050136339 A before-correction pattern edge defining step, a deviated position setting step, an edge selecting step, a correcting step, after-correction pattern edge defining step |
06/23/2005 | US20050136338 Using a photomask that can prevent critical dimension biases of pattern images of different pattern densities while forming a circuit pattern |
06/23/2005 | US20050136337 Method for forming wires of sub-micron-order scale |
06/23/2005 | US20050136336 Photomasks having offset aperatures that mitigates anisotropic optical diffraction, improves illumination and focusing, photolithography |
06/23/2005 | US20050136334 Device manufacturing method and mask for use therein |
06/23/2005 | US20050134866 Pattern-producing method for semiconductor device |
06/23/2005 | US20050134840 Dual stage defect region identification and defect detection method and apparatus |
06/23/2005 | DE10353798A1 Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske A method for generating a mapping error-avoiding mask layout for a mask |
06/23/2005 | DE10352639A1 Verfahren zur dynamischen Kontrolle eines Reticles A method for dynamic control of a reticle |
06/23/2005 | DE10351972A1 Determining optical influence of mask layer of lithographic mask involves measuring geometric dimensions of first and second test structures and determining phase shift and/or absorption of mask layer by comparing them |
06/23/2005 | DE10351607A1 Arrangement for projecting pattern on photo mask onto semiconductor wafer has supporting substrate surface with filter structure so more of perpendicularly incident light beam is reflected than of beam incident at inclination angle |
06/23/2005 | DE102004049735A1 Mask for microlithographic projection exposure apparatus, has pattern of opaque structures applied on support, where intermediate spaces between bar-like structures of opaque structures are filled with dielectric material |
06/22/2005 | EP1544680A2 Feature optimisation using interference mapping lithography |
06/22/2005 | EP1543451A2 Method and system for context-specific mask writing |
06/22/2005 | EP1543384A2 Composition which forms an electrically-conducting protective coat and a method for structuring a photoresist using the protective layer |
06/22/2005 | CN1630032A Design pattern correction method, mask producing method and semiconductor device producing method |
06/22/2005 | CN1630031A Pattern-producing method for semiconductor device |
06/22/2005 | CN1629735A Feature optimization using enhanced interference mapping lithography |
06/22/2005 | CN1629730A Method for executing model-based optical proximity correction |
06/22/2005 | CN1207631C Correction method of photomask and mfg. method of semiconductor element |
06/21/2005 | US6910203 Photomask and method for qualifying the same with a prototype specification |
06/21/2005 | US6909774 Apparatus and methods for surficial milling of selected regions on surfaces of multilayer-film reflective mirrors as used in X-ray optical systems |
06/21/2005 | US6909501 Pattern inspection apparatus and pattern inspection method |
06/21/2005 | US6908716 Disposable hard mask for photomask plasma etching |
06/21/2005 | US6908715 Multi-layer, attenuated phase-shifting mask |
06/21/2005 | US6908714 Absorber layer for EUV |
06/21/2005 | US6908713 EUV mask blank defect mitigation |
06/21/2005 | CA2329511C Apparatus for producing printing plates |
06/16/2005 | WO2005054950A2 Method for creating a control command for a mask writing device |
06/16/2005 | WO2005054336A1 Pellicle and novel fluorinated polymer |
06/16/2005 | WO2005054119A2 Methods and devices for fabricating three-dimensional nanoscale structures |
06/16/2005 | US20050132322 Mask evaluating method, mask evaluating system, method of manufacturing mask and computer program product |
06/16/2005 | US20050132310 Method for optimizing a number of kernels used in a sum of coherent sources for optical proximity correction in an optical microlithography process |
06/16/2005 | US20050130410 Contact hole printing by packing and unpacking |
06/16/2005 | US20050130074 Method for the manufacture of micro structures |
06/16/2005 | US20050130049 generating a laser beam, changing a phase of the laser beam to smooth the brightness distribution, applying the smoothed beam to the photomask, acquiring an image of the photomask using a sensor while the laser beam and the photomask are relatively moved, examining the image for defects |
06/16/2005 | US20050130048 Electro-optic device substrate and method for manufacturing the same electro-optic device and method for manufacturing the same, photomask, and electronic device |
06/16/2005 | US20050130047 Method for printability enhancement of complementary masks |
06/16/2005 | US20050130046 Subjecting the chrome-containing layer of a photomask to a wet etch process using deionized water and ozone; length of exposure is directly proportional to the degree of adjustment desired |
06/16/2005 | US20050130045 Exposing mask and production method therefor and exposing method |
06/16/2005 | US20050128473 Method and apparatus for article inspection including speckle reduction |
06/16/2005 | US20050128462 Holding system, exposure apparatus, and device manufacturing method |
06/16/2005 | US20050128398 Method for designing mask and fabricating panel |
06/16/2005 | US20050127356 Test mask structure |
06/16/2005 | US20050127307 Methods and devices for evaluating beam blur in subfields projection-exposed by a charged-particle-beam microlithography apparatus |
06/16/2005 | DE10224953B4 Verfahren zur Beseitigung von Phasenkonfliktzentren bei alternierenden Phasenmasken sowie Verfahren zur Herstellung von alternierenden Phasenmasken A method for removing phase conflict centers on alternating phase masks and process for producing alternating phase masks |
06/15/2005 | EP1542265A1 Mask and production method therefor and production method for semiconductor device |
06/15/2005 | EP1542073A2 Patterning method |
06/15/2005 | EP1542072A2 Method to produce a pattern layout of a photomask |
06/15/2005 | EP1540665A2 Photolithography mask repair |
06/15/2005 | EP1540418A2 Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask |
06/15/2005 | EP1539386A2 Manipulating device for photomasks that provides possibilities for cleaning and inspection of photomasks |
06/15/2005 | CN1628382A Test wafer and method for investigating elecrostatic discharge induced wafer defects |
06/15/2005 | CN1628324A Method and system for detecting defects |
06/15/2005 | CN1627187A Extraction method of dangerous patterns, program and mfg. method of semiconductor |
06/15/2005 | CN1627185A Phase shifting mask without Cr film layer, its mfg. method, and fabricating method for semiconductor |
06/15/2005 | CN1206573C Photomask containing non-linear optical material layer |
06/14/2005 | US6907596 Mask data generating apparatus, a computer implemented method for generating mask data and a computer program for controlling the mask data generating apparatus |
06/14/2005 | US6906783 System for using a two part cover for protecting a reticle |
06/14/2005 | US6906305 System and method for aerial image sensing |
06/14/2005 | US6905899 Methods for forming a photoresist pattern using an anti-optical proximity effect |
06/14/2005 | US6905802 Writing exposure to blanket photoresist; overlapping patterns; attenuation phase shifting |
06/14/2005 | US6905801 Lithography; masking absorber anisotropic etching; reflective multilayer; forming ruthenium layer then absorber |
06/09/2005 | WO2005008335A3 Method for analysing objects in microlithography |
06/09/2005 | WO2005003863A3 Device and method for processing a mask pattern used for the production of semiconductors |
06/09/2005 | US20050125765 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography |
06/09/2005 | US20050125764 Method for producing a mask layout avoiding imaging errors for a mask |
06/09/2005 | US20050125178 Apparatus for correcting a plurality of exposure tools, method for correcting a plurality of exposure tools, and method for manufacturing semiconductor device |
06/09/2005 | US20050125164 Method for dynamically monitoring a reticle |
06/09/2005 | US20050124078 Mask pattern correction method, semiconductor device manufacturing method, mask manufacturing method and mask |
06/09/2005 | US20050123845 Method of adjusting deviation of critical dimension of patterns |
06/09/2005 | US20050123841 an electromagnetic waveform comprising a computer program for producing a mask set including a phase shifting mask and a corresponding trim mask; semiconductors; integrated circuits |
06/09/2005 | US20050123840 Opaque pattern consists of electrically conductive material; has a higher diffraction efficiency for projection wavelength polarised parallel to the structures than for projection light of the same wavelength polarised perpendicular; intermediate spaces filled withliquid and solid dielectrics |
06/09/2005 | US20050123839 Photo mask capable of improving resolution by utilizing polarization of light and method of manufacturing the same |
06/09/2005 | US20050123838 Clear field annular type phase shifting mask |
06/09/2005 | US20050123837 Photomask features with interior nonprinting window using alternating phase shifting |
06/09/2005 | US20050121628 Pattern size correcting device and pattern size correcting method |
06/09/2005 | DE4420409B4 Photomaske mit Mustern zur Verringerung der erforderlichen Lichtleistung eines Steppers Photomask patterns to reduce the required light output of a stepper |
06/09/2005 | DE19534132B4 Lichtannäherungs-Korrekturverfahren Light proximity correction method |
06/09/2005 | DE102004053563A1 Photomaske und Verfahren zum Bilden eines Musters Photo mask and method for forming a pattern |
06/09/2005 | DE10115290B4 Herstellungsverfahren für eine Photomaske für eine integrierte Schaltung und entsprechende Photomaske Manufacturing method of a photomask for an integrated circuit and corresponding photomask |
06/08/2005 | EP1221072B1 Contact hole production by means of crossing sudden phase shift edges of a single phase mask |
06/08/2005 | CN1625796A Reticle and optical characteristic measuring method |
06/08/2005 | CN1624590A Measuring method and correction method for illumination irregularity of exposure device |
06/07/2005 | US6904587 Target pattern for manufacturing integrated circuits |
06/07/2005 | US6903821 Inspection method, apparatus and system for circuit pattern |
06/07/2005 | US6902868 Method of manufacturing integrated circuit |
06/07/2005 | US6902854 Scatter bar is applied on a mask to image the main structure from the mask onto a substrate by exposure; correction value for the OPC is selected in dependence upon a spacing between two parts of the main structure |
06/07/2005 | US6902852 Pattern transfer method using a mask and half tone mask |