Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
01/1998
01/08/1998WO1998000859A1 Method and apparatus for etching a semiconductor wafer
01/08/1998WO1998000858A1 Plasma etch reactor and method
01/08/1998WO1998000853A1 Detector devices
01/08/1998WO1998000577A1 Method and apparatus for flowing gases into a manifold at high potential
01/08/1998WO1998000576A1 Apparatus and method for high density plasma chemical vapor deposition
01/08/1998DE19641584C1 Vacuum coating device for application of substrate thin-film layers
01/08/1998DE19627170A1 Masked ion beam lithography arrangement
01/08/1998CA2259976A1 Plasma etch reactor and method
01/08/1998CA2259973A1 Plasma etch reactor and method for emerging films
01/08/1998CA2259972A1 Method and apparatus for etching a semiconductor wafer
01/07/1998EP0817237A2 Methods and apparatus for treating workpieces with plasmas
01/07/1998EP0817236A2 Plasma etching electrode and process for production thereof
01/07/1998EP0817235A1 A scanning electron microscope
01/07/1998EP0815936A2 Device for gas excitation
01/07/1998EP0815583A1 A stress cell for a scanning probe microscope
01/07/1998EP0688469B1 Method of triggering gas discharges
01/06/1998US5705931 Method for determining absolute plasma parameters
01/06/1998US5705080 Plasma-inert cover and plasma cleaning process
01/06/1998US5705042 Sputter coating
01/06/1998US5705019 Plasma processing apparatus
12/1997
12/31/1997CN1169094A Plasma source
12/30/1997US5703376 Multi-level resolution lithography
12/30/1997US5703375 Method and apparatus for ion beam neutralization
12/30/1997US5703373 Alignment fiducial for improving patterning placement accuracy in e-beam masks for x-ray lithography
12/30/1997US5703372 For use in an ion implanter
12/30/1997US5703361 Circuit scanning device and method
12/30/1997US5702621 Filling the inter-electrode space with inorganic pellets, supplying a pulse current to form a glass
12/30/1997US5702573 Method and apparatus for improved low pressure collimated magnetron sputter deposition of metal films
12/30/1997US5702562 Monitoring simultaneously plasma emission wavelengths and emission intensities; calculating etching rate and selectivity ratio of etched film and base film
12/30/1997US5702530 Distributed microwave plasma reactor for semiconductor processing
12/29/1997EP0814495A2 Adjusting DC bias voltage in plasma chamber
12/29/1997EP0814494A2 Ion beam machining method and device thereof
12/29/1997EP0814176A2 Method and apparatus for depositing diamond film
12/29/1997EP0813745A1 Electron beam pattern-writing column
12/29/1997EP0725975A4 Detection system for measuring high aspect ratio
12/29/1997EP0680384A4 Microwave energized process for the preparation of high quality semiconductor material.
12/29/1997EP0667921A4 Microwave apparatus for depositing thin films.
12/29/1997EP0555339B1 Magnetron sputter coating method and apparatus with rotating magnet cathode
12/24/1997WO1997049268A1 Circuit for reversing polarity on electrodes
12/24/1997WO1997049267A1 A.c. plasma processing system
12/24/1997WO1997049116A1 Gas delivery systems for particle beam processing
12/24/1997WO1997049111A1 Method and apparatus for ion and charged particle focusing
12/24/1997CN1168422A Microwave plasma processing apparatus and method therefor
12/24/1997CA2258649A1 Gas delivery systems for particle beam processing
12/23/1997US5701381 Mounting arrangement for a probe tip of a scanning force or tunneling microscope
12/23/1997US5701014 Projection lithography apparatus
12/23/1997US5701013 Wafer metrology pattern integrating both overlay and critical dimension features for SEM or AFM measurements
12/23/1997US5700741 Plasma purge method for plasma process particle control
12/23/1997US5700604 For transferring images or patterns onto a radiation sensitive substrate, for printing integrated circuits, accuracy
12/23/1997US5700326 Microwave plasma processing apparatus
12/18/1997WO1997047781A1 Reactive magnetron sputtering apparatus and method
12/18/1997DE19725156A1 Electron microscopy system for sample appraisal and process observation using common sample table
12/18/1997DE19646120A1 Micromechanical sensor for atomic force or scanning tunnelling microscope
12/18/1997CA2254354A1 Reactive magnetron sputtering apparatus and method
12/17/1997EP0813231A1 Electron beam lithography
12/17/1997EP0813227A2 RF plasma processors
12/17/1997EP0813226A2 Device and method for electron beam evaporation
12/17/1997EP0812368A1 Reactive sputtering process
12/16/1997US5699266 Method and apparatus for automatically recognizing repeated shapes for data compaction
12/16/1997US5698859 Method and device for proximity-effect correction
12/16/1997US5698856 Specimen holder for electron microscope
12/16/1997US5698082 Method and apparatus for coating substrates in a vacuum chamber, with a system for the detection and suppression of undesirable arcing
12/16/1997US5698062 Plasma treatment apparatus and method
12/16/1997US5698039 Process for cleaning a substrate using a barrier discharge
12/16/1997US5698036 Plasma processing apparatus
12/16/1997US5698035 Corrosion/shock and electrical resistance; improve thermoconductivity; consists of atleast one of zrconium bromide and titanium bromide, boron nitride and aluminum nitride
12/16/1997US5697751 Wafer transfer apparatus and method
12/16/1997CA2103770C Plasma-enhanced magnetron-sputtered deposition of materials
12/11/1997WO1997047028A1 High flown vacuum chamber including equipment modules such as plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
12/11/1997WO1997047023A1 Spin-split scanning electron microscope
12/11/1997WO1997047022A1 Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
12/11/1997WO1997046730A1 Temperature controlling method and apparatus for a plasma processing chamber
12/11/1997DE19622607A1 Sputter cathode
12/11/1997DE19622606A1 Sputter cathode
12/11/1997DE19622605A1 Sputter cathode
12/10/1997EP0812001A2 Cathodic sputtering device
12/10/1997EP0812000A2 Dose modification proximity effect compensation (PEC) technique for electron beam lithography
12/10/1997EP0811999A2 Scanning microscope
12/10/1997EP0811238A1 Reactive sputtering device
12/10/1997EP0811237A1 Deposition apparatus
12/10/1997EP0811236A2 Filtered cathodic arc source
12/10/1997EP0799557A4 High frequency induction plasma method and apparatus
12/10/1997CA2207154A1 Inductively coupled source for deriving substantially uniform plasma flux
12/09/1997US5696428 Apparatus and method using optical energy for specifying and quantitatively controlling chemically-reactive components of semiconductor processing plasma etching gas
12/09/1997US5696382 Ion-implanter having variable ion beam angle control
12/09/1997US5695832 Vacuum deposition; forming plasma
12/09/1997US5695660 Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
12/09/1997US5695597 Plasma reaction apparatus
12/07/1997CA2206232A1 Method and apparatus for depositing diamond film
12/04/1997WO1997046057A1 Plasma treatment apparatus and plasma treatment method
12/04/1997WO1997045857A1 Apparatus for plasma jet treatment of substrates
12/04/1997WO1997045856A1 Method for treating articles with a plasma jet
12/04/1997WO1997045855A1 Highly tetrahedral amorphous carbon films and methods for their production
12/04/1997WO1997045834A1 Recording media having protective overcoats of highly tetrahedral amorphous carbon and methods for their production
12/03/1997EP0810816A1 Balanced source for plasma system
12/03/1997EP0810641A2 Process for etching defective zones on the circumference of semiconductor substrate and etching apparatus
12/03/1997EP0810630A2 Low volume gas distribution assembly for a chemical downstream etch tool
12/03/1997EP0810629A1 Electron beam apparatus
12/03/1997EP0810628A2 Source for generating large surface pulsed ion and electron beams
12/03/1997EP0810624A1 Method and apparatus for ion formation in an ion implanter