Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
03/2000
03/29/2000EP0989202A1 Power supply device for sputtering and sputtering device using the same
03/29/2000EP0988647A1 Shaped shadow projection for an electron beam column
03/29/2000EP0988646A1 Methods and apparatus for improving resolution and reducing noise in an image detector for an electron microscope
03/29/2000EP0988407A1 Method for producing coated workpieces, uses and installation for the method
03/29/2000CN1249012A Method of multifunctional surface treatment, and device for implementing same
03/29/2000CN1248809A Ionization system for low-voltage modularized room
03/29/2000CN1248640A Cathode sputterion device with permanent magnet structure
03/28/2000US6043608 Plasma processing apparatus
03/28/2000US6043607 Apparatus for exciting a plasma in a semiconductor wafer processing system using a complex RF waveform
03/28/2000US6043499 Charge-up prevention method and ion implanting apparatus
03/28/2000US6043497 Photo-imprinting stand for the making of Bragg gratings
03/28/2000US6043491 Scanning electron microscope
03/28/2000US6043490 Vibration cancellation system for a charged particle beam apparatus
03/28/2000US6043489 Positron source
03/28/2000US6042738 Pattern film repair using a focused particle beam system
03/28/2000US6042706 Ionized PVD source to produce uniform low-particle deposition
03/28/2000US6042700 In first interval, sputtering material primarily from first disk-shaped target onto workpiece, in second interval sputtering from second ring-shaped target which is coil coupling radio frequency energy
03/28/2000US6042687 Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
03/28/2000US6042686 Power segmented electrode
03/28/2000US6041734 Use of an asymmetric waveform to control ion bombardment during substrate processing
03/28/2000US6041733 Plasma processing apparatus protected from discharges in association with secondary potentials
03/23/2000WO2000016385A1 Plasma reactor
03/23/2000WO2000016373A1 Target array for an arc vapor deposition chamber
03/23/2000WO2000016372A1 High energy electron diffraction apparatus
03/23/2000WO2000016371A1 Beam-utilizing equipment
03/23/2000WO2000016370A1 Electron beam aperture element with beam shielding
03/23/2000WO2000016367A1 Ac glow plasma discharge device having an electrode covered with apertured dielectric
03/23/2000WO2000015867A1 A method and apparatus for launching microwave energy into a plasma processing chamber
03/23/2000WO2000015544A1 Aperture in a semiconductor material, and the production and use thereof
03/23/2000WO2000003064A9 Gas distributor plate for a processing apparatus
03/23/2000WO1999066529A9 Transmission electron microscope ccd camera
03/23/2000DE19926601A1 Aperture, e.g. for a scanning probe microscopy sensor element, particle sieve or liquid or gas dosing and-or injection matrix, is produced by etching through an oxide layer in a depression exposed by semiconductor wafer back face etching
03/23/2000CA2344402A1 Ac glow plasma discharge device having an electrode covered with apertured dielectric
03/22/2000EP0987929A2 Ionization system
03/22/2000EP0986777A1 Lithography system
03/22/2000CN1248299A Power supply unit for sputtering device
03/22/2000CN1248298A Power supply device for sputtering and sputtering device using the same
03/22/2000CN1248061A Ion dosing device and method for ion-beam injector
03/22/2000CN1247986A Method for measuring distribution of charged particle beam and its relative method
03/21/2000US6040587 Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band
03/21/2000US6040583 Electron beam exposure method using a moving stage
03/21/2000US6040582 Ion beam focuser for an ion implanter analyzer
03/21/2000US6040576 Energy filter, particularly for an electron microscope
03/21/2000US6040095 Mask having measurement marks throughout the area of an e-beam projection mask on a grid of struts extending between sub-field membrane mask areas, the marks having been applied concurrently with patterning sub-field membrane mask areas
03/21/2000US6039855 Target for the sputtering cathode of a vacuum coating apparatus and method for its manufacture
03/21/2000US6039849 Method for the manufacture of electronic components
03/21/2000US6039848 Magnetron sputtering system uses a backing plate assembly having an insulating spacer ring coupled between and hermetically sealed to the backing plate and an extender ring
03/21/2000US6039847 A material of ions is sputtered with cesium ions to generate negative ions and, negative ions are accelerated and mass-separated to obtain a negative ion beam and material of thin film is sputtered with negative ion to form a thin film
03/21/2000US6039836 Focus rings
03/21/2000US6039834 Apparatus and methods for upgraded substrate processing system with microwave plasma source
03/21/2000US6039000 Focused particle beam systems and methods using a tilt column
03/16/2000WO2000014768A1 Electromagnetic field generator and method of operation
03/16/2000WO2000014767A1 Quadrupole device for projection lithography by means of charged particles
03/16/2000WO2000014766A1 Projection lithography device utilizing charged particles
03/16/2000WO2000014765A1 Scanning electron beam microscope
03/16/2000WO2000014519A1 Chemical analysis of defects using electron appearance spectroscopy
03/16/2000WO2000014365A1 Free-wheeling lock
03/16/2000WO2000003301A3 Exposure device having a planar motor
03/16/2000WO1999062097A9 Dissolution stage for an environmental scanning electron microscope
03/16/2000DE19842477A1 Electron beam irradiation of e.g. cable insulation and extrusions in continuous production employs synchronous electromagnetic redirection of scanned beam to promote exceptionally-uniform crossfire irradiation field
03/16/2000DE19839872A1 Measuring system used for micro-characterization of the near-surface region of the solid samples has an integral electron filter between the sample and detector
03/16/2000DE19839871A1 Manipulator zur Positionierung von Proben in Apparaturen und Kammern Manipulator for positioning specimens in apparatus and chambers
03/15/2000EP0986092A1 Electron multiplier
03/15/2000EP0986091A2 Time of flight energy measurement apparatus for an ion beam implanter
03/15/2000EP0985742A2 Plasma jet chemical vapor deposition system having a plurality of distribution heads
03/15/2000EP0984865A1 Diamond marking
03/15/2000EP0865716B1 A high-frequency plasma process wherein the plasma is excited by an inductive structure in which the phase and anti-phase portions of the capacitive currents between the inductive structure and the plasma are balanced
03/14/2000US6038018 Substrate inspecting apparatus, substrate inspecting system having the same apparatus and substrate inspecting method
03/14/2000US6038015 Electron-beam-projection-exposure apparatus with integrated mask inspection and cleaning portions
03/14/2000US6037601 Electron beam illumination device, and exposure apparatus with electron beam illumination device
03/14/2000US6037589 Electron beam device
03/14/2000US6037587 Chemical ionization source for mass spectrometry
03/14/2000US6036878 Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
03/14/2000US6036877 Plasma reactor with heated source of a polymer-hardening precursor material
03/14/2000US6036828 Apparatus for steering the arc in a cathodic arc coater
03/14/2000US6036821 Enhanced collimated sputtering apparatus and its method of use
03/14/2000US6036816 Apparatus for processing a sample having a metal laminate
03/14/2000US6035868 Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber
03/14/2000US6035805 Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment
03/14/2000CA2039581C Thermally stable magnetic deflection assembly and method of making same
03/09/2000WO2000013203A1 Plasma reactor with electrode arrangement for providing a grounding path for the plasma, and method of manufacturing the same
03/09/2000WO2000013202A1 Method and device for surface processing with plasma at atmospheric pressure
03/09/2000WO2000013201A1 Device and method for coating substrates in a vacuum
03/09/2000WO2000013200A1 Electron microscope
03/09/2000WO2000013030A1 High resolution analytical probe station
03/09/2000WO2000012446A1 Plasma-resistant member and plasma treatment apparatus using the same
03/09/2000DE19915767A1 Method of operating raster microscope involves continuously counting pulses, converting summation signal into analogue image signal corresponding to rate of quantized signals from specimen
03/08/2000EP0984075A1 Film deposition apparatus or artificial lattice multi-layered film
03/08/2000EP0983826A2 Manipulator for positioning probes in apparatuses and in chambers
03/08/2000EP0983608A2 Aluminum deposition shield
03/08/2000EP0983605A1 Plasma processing apparatus
03/08/2000EP0983394A1 Method and apparatus for low pressure sputtering
03/08/2000EP0640963B1 Recording and reproducing method and apparatus using a scanning probe
03/07/2000US6035113 Electron beam proximity correction method for hierarchical design data
03/07/2000US6034376 Electron-beam exposure system and a method applied therein
03/07/2000US6034375 Method of aligning a semiconductor substrate with a base stage and apparatus for doing the same
03/07/2000US6034346 Method and apparatus for plasma processing apparatus
03/07/2000US6033973 Using a halogen fluoride
03/07/2000US6033587 Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma
03/07/2000US6033586 Apparatus and method for surface treatment