Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
07/2000
07/11/2000US6087668 Charged-particle-beam projection method and apparatus
07/11/2000US6087667 Charged-particle-beam (CPB) lithography apparatus, evaluation method, and CPB source
07/11/2000US6087659 Apparatus and method for secondary electron emission microscope
07/11/2000US6087615 Ion source for an ion beam arrangement
07/11/2000US6087614 Plasma treating device
07/11/2000US6087052 Charged particle beam exposure method utilizing subfield proximity corrections
07/11/2000US6086962 Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
07/11/2000US6086727 Movable flux regulator disposed between target and wafer for partially blocking portion of target material from being deposited on said wafer during deposition of target material, wherein movable flux regulator is tiltable in x,y, and z-axis
07/11/2000US6086710 Surface treatment apparatus
07/11/2000US6085688 Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor
07/06/2000WO2000039838A2 Method for igniting a plasma inside a plasma processing reactor
07/06/2000WO2000039837A1 Perforated plasma confinement ring in plasma reactors
07/06/2000WO2000039836A1 Sem for transmission operation with a location-sensitive detector
07/06/2000WO2000039569A1 Nanotomography
07/06/2000WO2000039355A1 Method and device for coating substrates by means of bipolar pulse magnetron sputtering and the use thereof
07/06/2000DE19860779A1 Method for monitoring Faraday cups in ion implantation includes loopback device and interlock signals
07/06/2000DE19860474A1 Verfahren und Einrichtung zum Beschichten von Substraten mittels bipolarer Puls-Magnetron-Zerstäubung Method and apparatus for coating substrates with bipolar pulsed magnetron sputtering
07/06/2000DE19860010A1 Surface cleaning method for low temperature microscopy and spectroscopy uses glow discharge of argon gas
07/05/2000EP1017091A2 A processing method of silicon wafer and a processing apparatus
07/05/2000EP1017085A2 Semiconductor device manufacturing apparatus employing vacuum system
07/05/2000EP1016134A1 Plasma reactor for passivating a substrate
07/05/2000EP1016123A1 Atom probe
07/05/2000EP1016122A1 Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
07/05/2000EP1016121A1 Vapour deposition coating apparatus
07/05/2000EP1016120A1 Resistive heating of power coil to reduce transient heating/start up effects
07/05/2000EP1016119A1 Apparatus for sputtering ionized material in a medium to high density plasma
07/05/2000EP1016118A1 Apparatus and method for improved scanning efficiency in an ion implanter
07/05/2000EP1016117A1 Device and method for ion beam etching
07/05/2000EP1016116A2 Apparatus for improving etch uniformity and methods therefor
07/05/2000EP1015843A1 Lever arm for a scanning microscope
07/05/2000EP1015657A1 Apparatus and method for sputtering a magnetron target
07/05/2000EP0902961B1 Method for treating articles with a plasma jet
07/04/2000USRE36760 Method and apparatus for altering material using ion beams
07/04/2000US6084356 Plasma processing apparatus with a dielectric body in the waveguide
07/04/2000US6084241 Method of manufacturing semiconductor devices and apparatus therefor
07/04/2000US6084240 Ion implanter
07/04/2000US6084239 Electron microscope
07/04/2000US6084238 Scanning electron microscope
07/04/2000US6083412 Plasma etch apparatus with heated scavenging surfaces
07/04/2000US6083365 Method for forming a thin film and apparatus for the same
07/04/2000US6083364 Magnetron sputtering apparatus for single substrate processing
07/04/2000US6083363 Apparatus and method for uniform, low-damage anisotropic plasma processing
07/04/2000US6083361 Reactive gas atoms that react with the sputter particles released from the target produce a compound from the particle atoms and the reactive gas atoms that has a lower sticking characteristic to the side walls of the hole semiconductor
07/04/2000US6083359 Relative displacement between the surface of the target and the substrate surface to be coated such that the entirety of the surface of the target is constantly located opposite the surface of said substrate during sputtering
07/04/2000US6083356 Method and device for pre-treatment of substrates
07/04/2000US6083355 Electrodes for plasma treater systems
07/04/2000US6083344 Multi-zone RF inductively coupled source configuration
07/04/2000US6083068 Field emission device and method of fabricating the same
07/04/2000US6082374 Fluorine assisted stripping and residue removal in sapphire downstream plasma asher
07/04/2000US6082295 Plasma etching chamber for manufacturing semiconductor devices
07/04/2000US6082294 Method and apparatus for depositing diamond film
07/04/2000US6082293 Plasma source
06/2000
06/29/2000WO2000038214A1 Cathode having variable magnet configuration
06/29/2000WO2000038213A2 Physical vapor deposition of semiconducting and insulating materials
06/29/2000DE4032918C2 Vorrichtung zur Beaufschlagung eines Materials mit einem Elektronenstrahl Apparatus for subjecting a material to an electron beam
06/29/2000DE19963308A1 Erzeugungsvorrichtung für geladene Teilchen Generating charged particle device
06/29/2000DE19960314A1 Ionenstrahl-Bearbeitungsvorrichtung und Verfahren zum Betreiben einer Ionenquelle für diese An ion beam processing apparatus and method for operating an ion source for this
06/29/2000DE19859877A1 Nanotomographie Nanotomography
06/28/2000EP1014763A2 Compact helical resonator coil for ion implanter linear accelerator
06/28/2000EP1014761A1 Duct piece for gas treatment device and device comprising such a duct piece
06/28/2000EP1014422A1 Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
06/28/2000EP1014077A2 Method of determining the structure of polycristaline solid samples
06/28/2000EP1013792A1 Power supply unit for sputtering device
06/28/2000EP1012869A1 Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
06/28/2000EP1012868A2 Ion accelerator for use in ion implanter
06/28/2000EP1012867A1 Electron detectors
06/28/2000EP1012866A1 Method for eliminating first, second and third-order axial image deformations during correction of the third-order spherical aberration in electron optical systems
06/28/2000EP1012865A1 Method and apparatus for controlling a workpiece in a vacuum chamber
06/28/2000EP1012863A1 Glow plasma discharge device
06/28/2000EP1012861A1 Cathode structure and electron gun for cathode ray tubes
06/28/2000EP1012587A1 Charged particle analysis
06/27/2000US6081414 Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
06/27/2000US6081318 Installation for fabricating double-sided photomask
06/27/2000US6081113 Cantilever magnetic force sensor for magnetic force microscopy having a magnetic probe coated with a hard-magnetic material
06/27/2000US6080986 Secondary ion mass spectrometer with aperture mask
06/27/2000US6080679 High-speed soft evacuation process and system
06/27/2000US6080292 Monitoring apparatus for plasma process
06/27/2000US6080287 Sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall
06/27/2000US6080286 Opening trigger gas feed system to increase flow rate of discharge gas into vacuum chamber and to attain constant pressure in chamber immediately before discharge is detected, closing trigger when sputtering is detected, reopening
06/27/2000US6080284 Magnetron sputtering method employing a thin film manufacturing apparatus including in the sputtering portion of the vacuum chamber a multi-apertured partition separating film forming chamber from cathode chamber
06/27/2000US6080271 Plasma source for generating inductively coupled, plate-shaped plasma, having magnetically permeable core
06/27/2000US6080270 Compact microwave downstream plasma system
06/27/2000US6079426 Method and apparatus for determining the endpoint in a plasma cleaning process
06/27/2000US6079358 Apparatus for forming thin film
06/27/2000US6079357 Plasma processing apparatus
06/27/2000US6079356 Reactor optimized for chemical vapor deposition of titanium
06/27/2000US6079355 Alignment aid for an electrode plate assembly
06/27/2000CA2001805C Method and apparatus for sputter coating stepped wafers
06/22/2000WO2000036632A2 Inductive coil assembly
06/22/2000WO2000036631A1 Plasma processing apparatus
06/22/2000WO2000036630A1 Particle-optical apparatus involving detection of auger electrons
06/22/2000WO2000036395A1 Magnetic resonance exchange interaction force microscope and method for measuring exchange interaction force using the same
06/22/2000CA2256847A1 Particle-free cathodic arc carbon ion source
06/21/2000EP1010194A1 Vacuum sputtering apparatus
06/20/2000US6078382 Charged-particle-beam projection-optical system
06/20/2000US6078055 Proximity lithography device
06/20/2000US6078054 Charged particle beam optical system
06/20/2000US6078046 Apparatus for measuring electron beam intensity and electron microscope comprising the same
06/20/2000US6078045 Process for analysis of a sample
06/20/2000US6078044 Probe scanning apparatus