Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
09/2000
09/27/2000CN1267898A 电极 Electrode
09/26/2000US6124927 Method to protect chamber wall from etching by endpoint plasma clean
09/26/2000US6124599 Electron beam exposure system and method of manufacturing devices using the same
09/26/2000US6124598 Pattern exposure method and system
09/26/2000US6124596 Charged-particle-beam projection apparatus and transfer methods
09/26/2000US6124003 Film depositing method and film depositing apparatus
09/26/2000US6123814 Producing substrates with optical layers, sputtering targets, rotation
09/26/2000US6123805 Discharge electrode and process chamber of dry etching facility for manufacturing semiconductor devices
09/26/2000US6123802 Method and apparatus for preventing plasma formation
09/26/2000US6123791 Dielectric windows supported on walls, ceramics, pedestals. power sources and gas introducing assembly
09/26/2000US6123775 Reaction chamber component having improved temperature uniformity
09/26/2000CA2182247C Apparatus and method for treatment of substrate surface using plasma focused below orifice leading from chamber into substrate containing area
09/21/2000WO2000055894A1 Plasma processing apparatus and method of maintaining the same
09/21/2000WO2000055884A1 Sterilization by a low energy electron beam
09/21/2000WO2000055690A2 A compact photoemission source, field and objective lens arrangement for high throughput electron beam lithography
09/21/2000WO2000055388A2 Method and apparatus for arc deposition
09/21/2000WO2000054899A1 A method for a repetitive ion beam processing with a by carbon containing ion beam
09/21/2000WO2000022648A9 Ionized metal plasma source, comprising a centrally arranged additional rf coil
09/21/2000WO2000022647A9 Coil and coil feedthrough
09/21/2000DE19911046A1 Plasma unit for controlling etching, sputtering off or structuring surfaces and/or generating of surface coatings; controls plasma intensity within given time over substrate and varies substrate voltage over given time
09/21/2000CA2329539A1 A compact photoemission source, field and objective lens arrangement for high throughput electron beam lithography
09/20/2000EP1037255A2 Scanning wheel for ion implantation process chamber
09/20/2000EP1037254A2 Low energy ion implantation device
09/20/2000EP1037253A2 Automation of beam control in scanning electron microscope systems
09/20/2000EP1037252A2 Energy filter
09/20/2000EP1036214A1 Mixed frequency cvd process and apparatus
09/20/2000EP1036210A1 Apparatus for surface modification of polymer, metal and ceramic materials using ion beam
09/20/2000EP1036207A2 Device for processing workpieces in low pressured plasma
09/20/2000EP0823944A4 Sputtering device
09/19/2000US6122035 Lithographic system and method for exposing a target utilizing unequal stepping distances
09/19/2000US6121625 Charged particle beam lithography apparatus for forming pattern on semi-conductor
09/19/2000US6121623 Parallel radiation detector
09/19/2000US6120660 Removable liner design for plasma immersion ion implantation
09/19/2000US6120656 Topographically precise thin film coating system
09/19/2000US6120640 Etch resistant protective coating on aluminum substrate part
09/19/2000US6120610 Plasma etch system
09/19/2000US6120606 Gas vent system for a vacuum chamber
09/14/2000WO2000038213A3 Physical vapor deposition of semiconducting and insulating materials
09/14/2000WO2000018980A8 An in-line sputter deposition system
09/14/2000DE19910786A1 Magnetron cathode used in atomizing target, includes sealed liquid cooling system to prevent former corrosive damage, in construction dispensing with costly special fasteners
09/13/2000EP1035561A2 Refractory coated component for use in thin film deposition and method for making
09/13/2000EP1035560A1 Rotatable workpiece support including cylindrical workpiece support surfaces for an ion beam implanter
09/13/2000EP1034557A1 Radiofrequency gaseous detection device (rf-gdd)
09/13/2000EP1034377A1 Differential pumping via core of annular supersonic jet
09/13/2000EP0811237B1 Deposition apparatus
09/13/2000EP0795196B1 Particle-optical apparatus comprising a fixed diaphragm for the monochromator filter
09/12/2000US6118218 Steady-state glow-discharge plasma at atmospheric pressure
09/12/2000US6118129 Method and system for exposing an exposure pattern on an object by a charged particle beam which is shaped into a plurality of beam elements
09/12/2000US6118128 Alignment mark for electron beam lithography
09/12/2000US6118123 Electron probe microanalyzer
09/12/2000US6118122 Ion beam working apparatus
09/12/2000US6118121 Probe scanning mechanism for a scanning probe microscope
09/12/2000US6117349 Composite shadow ring equipped with a sacrificial inner ring
09/12/2000US6117348 Real time monitoring of plasma etching process
09/12/2000US6117281 A magnetron sputtering target is formed with radially extending grooves to reduce particle contamination during sputtering, which attract redeposited material for resputtering during early stages fine particle nucleation
09/12/2000US6117279 Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition
09/12/2000US6117245 Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
09/12/2000US6116187 Thin film forming apparatus
09/12/2000US6116186 Apparatus for cooling a plasma generator
09/12/2000US6116185 Gas injector for plasma enhanced chemical vapor deposition
09/12/2000CA2190086C An electron jet vapor deposition system
09/08/2000WO2000052973A2 Plasma reactor having a helicon wave high density plasma source
09/08/2000WO2000052734A1 Method and apparatus for ionized physical vapor deposition
09/08/2000WO2000052733A1 Schottky and field emission electron guns with enhanced angular intensity
09/08/2000WO2000052732A2 Active species control with time-modulated plasma
09/08/2000WO2000052731A2 Goniometer
09/08/2000WO2000052730A1 Liquid metal ion source and method for measuring flow impedance of liquid metal ion source
09/08/2000WO2000052221A1 Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
09/08/2000CA2363470A1 Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
09/06/2000EP1033741A2 Charged-particle beam lithography system
09/06/2000EP1033738A1 Device for the electrostatic deflection of a particle beam
09/06/2000EP1033068A1 Plasma processing apparatus having rotating magnets
09/06/2000EP1032944A1 Planar magnetron with moving magnet assembly
09/06/2000EP1032943A2 Method for producing plasma by microwave irradiation
09/06/2000EP0880793B1 Large area uniform ion beam formation
09/06/2000EP0830706B1 Selective cross-link scanning system
09/05/2000US6114811 Electromagnetic high-frequency apparatus with a transmission wall having antennas
09/05/2000US6114709 Electron-beam transfer-exposure apparatus and method
09/05/2000US6114708 Electron-beam exposure apparatus and exposure method
09/05/2000US6114695 Scanning electron microscope and method for dimension measuring by using the same
09/05/2000US6114681 Automatic focus control method and automatic focus control system having in focus and out of focus states detection
09/05/2000US6114252 Plasma processing tools, dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
09/05/2000US6113761 Copper sputtering target assembly and method of making same
09/05/2000US6113760 Power supply apparatus for sputtering and a sputtering apparatus using the power supply apparatus
09/05/2000US6113754 Sputtering apparatus having a target backing plate equipped with a cooling line and sputtering method using the same
09/05/2000US6113752 Sputtering
09/05/2000US6113736 Gas ring apparatus for semiconductor etching
09/05/2000US6113735 Distributed system and code for control and automation of plasma immersion ion implanter
09/05/2000US6113731 Magnetically-enhanced plasma chamber with non-uniform magnetic field
09/05/2000US6113701 Semiconductor device, manufacturing method, and system
09/05/2000US6113056 Workpiece vibration damper
09/05/2000US6112697 RF powered plasma enhanced chemical vapor deposition reactor and methods
09/05/2000US6112695 Apparatus for plasma deposition of a thin film onto the interior surface of a container
09/05/2000CA2073236C Process and apparatus for the ignition of cvd plasmas
08/2000
08/31/2000DE19906960A1 Forming metal structures in NM range on conductive surfaces of substrates for miniature electronic components
08/31/2000DE19906054A1 Rapid-closing high vacuum valve for use in particle accelerators or ion implantation apparatus has closing plate operated by electronically detonated propelling charge or detonator pellet
08/31/2000DE10000362A1 Detecting structured substrates defects involves scanning charged particle beam over substrate with optical column stationary w.r.t. surface, comparing detected images with reference
08/30/2000EP1030745A1 All-surface biasable and/or temperature-controlled electrostatically-shielded rf plasma source
08/30/2000EP0586579B1 Microwave plasma processing device
08/30/2000CN1265222A Method and appts. for ionized sputtering of materials