Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
05/2001
05/08/2001US6230071 Depth enhancement of ion sensitized data
05/08/2001US6229609 Scanning near-field optic/atomic force microscope
05/08/2001US6229264 Plasma processor with coil having variable rf coupling
05/08/2001US6229149 Electron beam drawing apparatus and method of the same
05/08/2001US6229148 Ion implantation with programmable energy, angle, and beam current
05/08/2001US6228438 Plasma reactor for the treatment of large size substrates
05/08/2001US6228278 Methods and apparatus for determining an etch endpoint in a plasma processing system
05/08/2001US6228277 Etch endpoint detection
05/08/2001US6228236 Sputter magnetron having two rotation diameters
05/08/2001US6228235 Magnetron for low pressure, full face erosion
05/08/2001US6228229 Method and apparatus for generating a plasma
05/08/2001US6228210 Surface wave coupled plasma etching apparatus
05/08/2001US6228208 Plasma density and etch rate enhancing semiconductor processing chamber
05/08/2001US6228176 Contoured platen design for plasma immerson ion implantation
05/08/2001US6227141 RF powered plasma enhanced chemical vapor deposition reactor and methods
05/07/2001WO2001048790A1 Baffle plate, apparatus for producing the same, method of producing the same, and gas processing apparatus containing baffle plate
05/03/2001WO2001031683A1 Plasma doping system comprising a hollow cathode
05/03/2001WO2001031682A1 Method and apparatus for low voltage plasma doping using dual pulses
05/03/2001WO2001031681A1 Method and apparatus for eliminating displacement current from current measurements in a plasma processing system
05/03/2001WO2001031680A1 Vacuum circuit for a device for treating a receptacle with low pressure plasma
05/03/2001WO2001031679A1 Wide parameter range ion beam scanners
05/03/2001WO2001031403A1 Ionic lithography method, implementing equipment and reticle for such equipment
05/03/2001WO2001031080A2 Electron beam physical vapor deposition apparatus
05/03/2001WO2001004931A3 Method and apparatus for providing uniform gas delivery to substrates in cvd and pecvd processes
05/03/2001US20010000702 Method and apparatus for use with an electron gun employing a thermionic source of electrons
05/03/2001US20010000604 Plasma reactor with antenna of coil conductors of concentric helices offset along the axis of symmetry
05/03/2001DE19951017A1 Verfahren und Vorrichtung zur Plasmabehandlung von Oberflächen Method and apparatus for plasma treatment of surfaces
05/03/2001DE19950083A1 Ferroelectric plasma reactor stabilization device uses ferroelectric barrier inserted between field electrodes and ferroelectric ceramic pellets
05/03/2001CA2388335A1 Vacuum circuit for a device for treating a receptacle with low pressure plasma
05/02/2001EP1096561A2 Method for rapid dechucking of a semiconductor wafer from an electrostatic chuck
05/02/2001EP1096554A1 Plasma processing apparatus
05/02/2001EP1096545A2 Tilted sputtering target with shield to block contaminants
05/02/2001EP1095395A1 Rf matching network with distributed outputs
05/02/2001EP1095394A1 Feedthrough overlap coil
05/02/2001EP1095393A2 System and method to correct for distortion caused by bulk heating in a substrate
05/02/2001EP1095392A1 Double slit-valve doors for plasma processing
05/02/2001EP1095217A1 Plasma vacuum pumping cell
05/02/2001EP1095171A1 Method and apparatus for increasing wafer throughput between cleanings in semiconductor processing reactors
05/02/2001CN1293717A Plasma processing system and method
05/02/2001CN1293451A Charged particle beam photoetching device and photoetching process of charged particle beam
05/02/2001CN1293450A Electron beam exposure method and mask used and electron beam exposure system
05/01/2001US6225747 Charged-particle source, control system and process using gating to extract the charged particle beam
05/01/2001US6225746 Plasma processing system
05/01/2001US6225745 Dual plasma source for plasma process chamber
05/01/2001US6225744 Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil
05/01/2001US6225668 Semiconductor device having a single crystal gate electrode and insulation
05/01/2001US6225637 Electron beam exposure apparatus
05/01/2001US6225628 Scanning electron microscope
05/01/2001US6225627 Focused ion beam system
05/01/2001US6225592 Method and apparatus for launching microwave energy into a plasma processing chamber
05/01/2001US6225025 Fabrication process of a semiconductor device by electron-beam lithography
05/01/2001US6225011 Method for manufacturing semiconductor devices utilizing plurality of exposure systems
05/01/2001US6224726 Cathodic arc coating apparatus
05/01/2001US6224725 Unbalanced magnetron sputtering with auxiliary cathode
05/01/2001US6224724 Physical vapor processing of a surface with non-uniformity compensation
05/01/2001US6224718 Target assembly for ion beam sputter deposition with multiple paddles each having targets on both sides
05/01/2001US6223686 Apparatus for forming a thin film by plasma chemical vapor deposition
05/01/2001US6223684 Film deposition apparatus
04/2001
04/26/2001WO2001029874A1 Planar magnetron sputtering apparatus
04/26/2001WO2001029873A1 Method and apparatus for controlling wafer uniformity using spatially resolved sensors
04/26/2001WO2001029872A1 Particle optical apparatus
04/26/2001WO2001029544A1 Method of determining the charge carrier concentration in materials, notably semiconductors
04/26/2001DE19947932C1 Device for magnetron sputtering has an outer plasma electrode with a first potential arranged between a target and a counter electrode with a second potential
04/26/2001DE19920693C1 Offener UV/VUV-Excimerstrahler und Verfahren zur Oberflächenmodifizierung von Polymeren Open UV / VUV excimer lamp and process for the surface modification of polymers
04/25/2001EP1094691A1 Method for plasma generation by means of capacitive uniform discharges, and device for implementing same
04/25/2001EP1094505A1 Plasma treating device
04/25/2001EP1094496A2 Sputtering chamber shield promoting reliable plasma ignition
04/25/2001EP1094495A2 Sputter magnetron having two rotation diameters
04/25/2001EP1094494A1 Method for plasma generation by means of a capacitive multipolar-barrier discharge, and device for implementing same
04/25/2001EP1094493A2 Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage
04/25/2001EP1094492A1 Procedure for electron microscopic imaging and method for realizing a motion picture video of at least tiny animals
04/25/2001EP1094130A2 Method and apparatus for plasma processing of surfaces
04/25/2001EP1093662A1 Apparatus and method for reducing charge accumulation on a substrate
04/24/2001US6222718 Integrated power modules for plasma processing systems
04/24/2001US6222321 Plasma generator pulsed direct current supply in a bridge configuration
04/24/2001US6222197 Charged-particle-beam pattern-transfer methods and apparatus
04/24/2001US6222196 Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter
04/24/2001US6222195 Charged-particle-beam exposure device and charged-particle-beam exposure method
04/24/2001US6221782 Adjusting DC bias voltage in plasma chamber
04/24/2001US6221221 Apparatus for providing RF return current path control in a semiconductor wafer processing system
04/24/2001US6221217 Physical vapor deposition system having reduced thickness backing plate
04/24/2001US6221202 Efficient plasma containment structure
04/24/2001US6221169 Generating ion beam having fluorine component; directing ion beam toward surface to be cleaned; neutralizing ion beam by; cleaning surface by allowing beam of neutral fluorine atoms to react with contaminants; removing volatile reaction product
04/24/2001US6220914 Method of forming gated photocathode for controlled single and multiple electron beam emission
04/24/2001US6220203 Device for vacuum coating bulk material
04/24/2001US6220201 High density plasma CVD reactor with combined inductive and capacitive coupling
04/24/2001CA2207235C Large-scale, low pressure plasma-ion deposition of diamondlike carbon films
04/19/2001WO2001028300A1 Matching device and plasma processing apparatus
04/19/2001WO2001027970A1 Electric supply unit and a method for reducing sparking during sputtering
04/19/2001WO2001027969A1 Method and apparatus for etching and deposition using micro-plasmas
04/19/2001WO2001027968A1 Determining beam alignment in ion implantation using rutherford back scattering
04/19/2001WO2001027967A1 Method and apparatus for a coaxial optical microscope with focused ion beam
04/19/2001WO2001027964A2 Electron impact ion source
04/19/2001DE19949394A1 Elektrische Versorgungseinheit und Verfahren zur Reduktion der Funkenbildung beim Sputtern Electric power supply unit and method for reducing spark formation in sputtering
04/19/2001DE19929615C1 Vorrichtung und Verwendung der Vorrichtung zur Überwachung von absichtlichen oder unvermeidbaren Schichtabscheidungen A device and use of the device for monitoring of deliberate or unavoidable layer depositions
04/18/2001EP1093154A2 Magnetron with cooling system for substrate processing system
04/18/2001EP1093149A2 Decaborane ion source
04/18/2001EP1092229A1 Multiple coil antenna for inductively-coupled plasma generation systems
04/18/2001EP1092228A2 Electrode for plasma processes and method for manufacture and use thereof
04/18/2001EP1092109A1 Vacuum tight coupling for tube sections