Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866) |
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07/03/2001 | US6255663 Charged particle beam exposure apparatus and semiconductor device manufacturing method |
07/03/2001 | US6255662 Rutherford backscattering detection for use in Ion implantation |
07/03/2001 | US6255220 Method and apparatus for plasma control |
07/03/2001 | US6254747 Magnetron sputtering source enclosed by a mirror-finished metallic cover |
07/03/2001 | US6254746 Recessed coil for generating a plasma |
07/03/2001 | US6254738 Use of variable impedance having rotating core to control coil sputter distribution |
07/03/2001 | US6254737 Active shield for generating a plasma for sputtering |
07/03/2001 | US6254721 Method and apparatus for processing samples |
07/03/2001 | US6254683 Substrate temperature control method and device |
07/03/2001 | US6254398 Method for initiating a helium alarm particle detector in a dry etching system prior to initiation of the etching process |
07/03/2001 | US6253704 Apparatus and method for pulsed plasma processing of a semiconductor substrate |
07/03/2001 | US6253703 Microwave chemical vapor deposition apparatus |
07/03/2001 | CA2093635C Magnetron sputter coating method and apparatus with rotating magnet cathode |
06/28/2001 | WO2001047009A2 Method and apparatus for detecting the endpoint of a photoresist stripping process |
06/28/2001 | WO2001046993A2 Reduction of plasma charge-induced damage in microfabricated devices |
06/28/2001 | WO2001046990A2 Microwave plasma reactor and method |
06/28/2001 | WO2001046986A1 Semiconductor processing equipment |
06/28/2001 | WO2001046677A2 Irradiating device with highly flexible membrane bellows |
06/28/2001 | WO2001046492A1 Method and system for reducing damage to substrates during plasma processing with a resonator source |
06/28/2001 | WO2001046489A1 Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes |
06/28/2001 | WO2000055388A3 Method and apparatus for arc deposition |
06/28/2001 | WO1999065821A9 Free-standing and aligned carbon nanotubes and synthesis thereof |
06/28/2001 | US20010005537 Recording medium and method of manufacturing same |
06/28/2001 | US20010005119 Ion beam processing apparatus for processing work piece with ion beam being neutralized uniformly |
06/28/2001 | US20010004921 Methods and apparatus for determining an etch endpoint in a plasma processing system |
06/28/2001 | US20010004920 Provides shields for shielding the interior surface of the reactor pumping annulus from the plasma by preventing plasma from flowing through gap between wafer pedestal and the chamber sidewall without obstructing free flow of natural gas |
06/28/2001 | DE19963122A1 Plasma chemical vapor deposition assembly has a cylindrical structure with a waveguide system to couple the microwave energy with a gas feed to coat the interior of plastics containers of all shapes and sizes without modification |
06/28/2001 | DE19956733A1 Verfahren zur Regelung von Sputterprozessen The method for controlling sputtering |
06/28/2001 | DE10052082A1 Verfahren zum Behandeln und Beschichten von Oberflächen aus nichtleitenden, dielektrischen Materialien mittels mokrowellenangeregter Plasmen und Vorrichtung zur Durchführung des Verfahrens A method for treating and coating of surfaces of non-conductive, dielectric materials with plasmas mokrowellenangeregter and apparatus for carrying out the method |
06/27/2001 | EP1111652A1 Quartz insulator for ion implanter beamline components |
06/27/2001 | EP1111651A2 Power supply hardening for ion beam systems |
06/27/2001 | EP1111650A2 A specimen-carrier accessory device for the stereoscopic analysis by scanning electron microscope |
06/27/2001 | EP1111084A1 Pretreatment process for plasma immersion ion implantation |
06/27/2001 | EP1110237A2 Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma output or adjusting the same upwards |
06/27/2001 | EP1110234A1 Device and method for coating substrates in a vacuum |
06/27/2001 | EP1110233A1 Scanning electron beam microscope |
06/27/2001 | EP1110232A1 Automated set up of an energy filtering transmission electron microscope |
06/27/2001 | CN1300875A Plasma treating apparatus |
06/26/2001 | US6252756 Low voltage modular room ionization system |
06/26/2001 | US6252705 Stage for charged particle microscopy system |
06/26/2001 | US6252412 Method of detecting defects in patterned substrates |
06/26/2001 | US6252354 RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
06/26/2001 | US6252344 Electron gun used in an electron beam exposure apparatus |
06/26/2001 | US6252339 Removable bombardment filament-module for electron beam projection systems |
06/26/2001 | US6251793 Particle controlling method for a plasma processing chamber |
06/26/2001 | US6251792 Plasma etch processes |
06/26/2001 | US6251758 Construction of a film on a semiconductor wafer |
06/26/2001 | US6251281 Negative ion filter |
06/26/2001 | US6251242 Magnetron and target producing an extended plasma region in a sputter reactor |
06/26/2001 | US6251241 Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield |
06/26/2001 | US6251218 Ion beam processing apparatus |
06/26/2001 | US6251216 Apparatus and method for plasma processing |
06/26/2001 | US6251187 Gas distribution in deposition chambers |
06/26/2001 | US6250251 Vacuum processing apparatus and vacuum processing method |
06/26/2001 | US6250250 Multiple-cell source of uniform plasma |
06/21/2001 | WO2001045150A1 Pressure control method |
06/21/2001 | WO2001045141A2 Method and apparatus for smoothing thin conductive films by gas cluster ion beam |
06/21/2001 | WO2001045136A1 Method and system for the examination of specimen using a charged particle beam |
06/21/2001 | WO2001045135A2 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates |
06/21/2001 | WO2001045134A2 Method and apparatus for producing uniform process rates |
06/21/2001 | WO2001044802A1 Method for the determination of gaseous chemical components in a process reactor for treating electrical components, in particular wafers |
06/21/2001 | WO2001044540A2 Method and device for monitoring etching chambers |
06/21/2001 | WO2001024220A3 Uniform gas distribution in large area plasma treatment device |
06/21/2001 | WO2000075281A3 Supercritical fluid-assisted nebulization and bubble drying |
06/21/2001 | WO2000073531A3 Copper sputtering target assembly and method of making same |
06/21/2001 | US20010004478 Plasma treatment of titanium nitride formed by chemical vapor deposition |
06/21/2001 | US20010004476 Applying pulse-shape voltage to insulator while insulator is irradiated with electron beam |
06/21/2001 | US20010004185 Charged-particle beam exposure apparatus, exposure system, control method therefor, and device manufacturing method |
06/21/2001 | US20010004047 Confines the high pressure required for ion generation to an ion source and deposits thin films in a low background pressure, in which energetic electrons generated from sputter target biased negative relative to ground are controlled |
06/21/2001 | US20010004000 Plasma reactor with coil antenna of interleaved conductors |
06/21/2001 | DE19961327A1 Unit to generate plasma in receptacle holding sample or component to be treated; has thin-walled electrode connected to generator and arranged in receptacle filled with processing gas to ignite plasma |
06/20/2001 | EP1109230A2 Multijunction photovoltaic cell using a silicon or silicon-germanium substrate |
06/20/2001 | EP1109196A1 Diamond-like coated components in an ion implanter for reducing x-ray emissions |
06/20/2001 | EP1109166A1 Recording medium and method of manufacturing same |
06/20/2001 | EP1108265A1 Plasma reactor with electrode arrangement for providing a grounding path for the plasma, and method of manufacturing the same |
06/20/2001 | EP1108264A1 Method and device for surface processing with plasma at atmospheric pressure |
06/20/2001 | EP1108263A1 Elevated stationary uniformity ring |
06/20/2001 | EP1108216A1 High resolution analytical probe station |
06/20/2001 | EP0832309A4 Cathodic arc cathode |
06/20/2001 | CN1300524A processing system with dual ion sources |
06/20/2001 | CN1300384A Retaining device for photo blanks |
06/20/2001 | CN1300097A Electronic-beam exposing method |
06/20/2001 | CN1300095A Sample positioning method for microscope with scanning probe |
06/19/2001 | US6249000 Scanning probe microscope |
06/19/2001 | US6248642 SIMOX using controlled water vapor for oxygen implants |
06/19/2001 | US6248251 Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma |
06/19/2001 | US6248250 RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
06/19/2001 | US6248223 Sputtering apparatus |
06/19/2001 | US6248220 Radio frequency sputtering apparatus and film formation method using same |
06/19/2001 | US6248219 Efficient sputtering of target within a confined plasma discharge space based upon a ratio of drop of time-averaged electric potential adjacent to electrode surfaces between which a radio frequency plasma discharge is generated |
06/19/2001 | US6248206 Apparatus for sidewall profile control during an etch process |
06/19/2001 | US6247425 Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor |
06/14/2001 | WO2001043282A1 Variable load switchable impedance matching system |
06/14/2001 | WO2001043267A1 Power supply with flux-controlled transformer |
06/14/2001 | WO2001043160A1 Ionizer for gas cluster ion beam formation |
06/14/2001 | WO2001043157A1 Ion implantation ion source, system and method |
06/14/2001 | WO2001043155A1 Hollow electrode for plasma generation |
06/14/2001 | WO2001042526A1 Plasma processing container internal member and production method therefor |
06/14/2001 | US20010003655 Which can correct position of an electron-beam based on an amount of position of the electron beam, while reflecting charge-up of a semiconductor wafer used, obtaining alignment accuracy in superposing |
06/14/2001 | US20010003607 Alternate steps of imp and sputtering process to improve sidewall coverage |