Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
07/2001
07/03/2001US6255663 Charged particle beam exposure apparatus and semiconductor device manufacturing method
07/03/2001US6255662 Rutherford backscattering detection for use in Ion implantation
07/03/2001US6255220 Method and apparatus for plasma control
07/03/2001US6254747 Magnetron sputtering source enclosed by a mirror-finished metallic cover
07/03/2001US6254746 Recessed coil for generating a plasma
07/03/2001US6254738 Use of variable impedance having rotating core to control coil sputter distribution
07/03/2001US6254737 Active shield for generating a plasma for sputtering
07/03/2001US6254721 Method and apparatus for processing samples
07/03/2001US6254683 Substrate temperature control method and device
07/03/2001US6254398 Method for initiating a helium alarm particle detector in a dry etching system prior to initiation of the etching process
07/03/2001US6253704 Apparatus and method for pulsed plasma processing of a semiconductor substrate
07/03/2001US6253703 Microwave chemical vapor deposition apparatus
07/03/2001CA2093635C Magnetron sputter coating method and apparatus with rotating magnet cathode
06/2001
06/28/2001WO2001047009A2 Method and apparatus for detecting the endpoint of a photoresist stripping process
06/28/2001WO2001046993A2 Reduction of plasma charge-induced damage in microfabricated devices
06/28/2001WO2001046990A2 Microwave plasma reactor and method
06/28/2001WO2001046986A1 Semiconductor processing equipment
06/28/2001WO2001046677A2 Irradiating device with highly flexible membrane bellows
06/28/2001WO2001046492A1 Method and system for reducing damage to substrates during plasma processing with a resonator source
06/28/2001WO2001046489A1 Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes
06/28/2001WO2000055388A3 Method and apparatus for arc deposition
06/28/2001WO1999065821A9 Free-standing and aligned carbon nanotubes and synthesis thereof
06/28/2001US20010005537 Recording medium and method of manufacturing same
06/28/2001US20010005119 Ion beam processing apparatus for processing work piece with ion beam being neutralized uniformly
06/28/2001US20010004921 Methods and apparatus for determining an etch endpoint in a plasma processing system
06/28/2001US20010004920 Provides shields for shielding the interior surface of the reactor pumping annulus from the plasma by preventing plasma from flowing through gap between wafer pedestal and the chamber sidewall without obstructing free flow of natural gas
06/28/2001DE19963122A1 Plasma chemical vapor deposition assembly has a cylindrical structure with a waveguide system to couple the microwave energy with a gas feed to coat the interior of plastics containers of all shapes and sizes without modification
06/28/2001DE19956733A1 Verfahren zur Regelung von Sputterprozessen The method for controlling sputtering
06/28/2001DE10052082A1 Verfahren zum Behandeln und Beschichten von Oberflächen aus nichtleitenden, dielektrischen Materialien mittels mokrowellenangeregter Plasmen und Vorrichtung zur Durchführung des Verfahrens A method for treating and coating of surfaces of non-conductive, dielectric materials with plasmas mokrowellenangeregter and apparatus for carrying out the method
06/27/2001EP1111652A1 Quartz insulator for ion implanter beamline components
06/27/2001EP1111651A2 Power supply hardening for ion beam systems
06/27/2001EP1111650A2 A specimen-carrier accessory device for the stereoscopic analysis by scanning electron microscope
06/27/2001EP1111084A1 Pretreatment process for plasma immersion ion implantation
06/27/2001EP1110237A2 Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma output or adjusting the same upwards
06/27/2001EP1110234A1 Device and method for coating substrates in a vacuum
06/27/2001EP1110233A1 Scanning electron beam microscope
06/27/2001EP1110232A1 Automated set up of an energy filtering transmission electron microscope
06/27/2001CN1300875A Plasma treating apparatus
06/26/2001US6252756 Low voltage modular room ionization system
06/26/2001US6252705 Stage for charged particle microscopy system
06/26/2001US6252412 Method of detecting defects in patterned substrates
06/26/2001US6252354 RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
06/26/2001US6252344 Electron gun used in an electron beam exposure apparatus
06/26/2001US6252339 Removable bombardment filament-module for electron beam projection systems
06/26/2001US6251793 Particle controlling method for a plasma processing chamber
06/26/2001US6251792 Plasma etch processes
06/26/2001US6251758 Construction of a film on a semiconductor wafer
06/26/2001US6251281 Negative ion filter
06/26/2001US6251242 Magnetron and target producing an extended plasma region in a sputter reactor
06/26/2001US6251241 Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield
06/26/2001US6251218 Ion beam processing apparatus
06/26/2001US6251216 Apparatus and method for plasma processing
06/26/2001US6251187 Gas distribution in deposition chambers
06/26/2001US6250251 Vacuum processing apparatus and vacuum processing method
06/26/2001US6250250 Multiple-cell source of uniform plasma
06/21/2001WO2001045150A1 Pressure control method
06/21/2001WO2001045141A2 Method and apparatus for smoothing thin conductive films by gas cluster ion beam
06/21/2001WO2001045136A1 Method and system for the examination of specimen using a charged particle beam
06/21/2001WO2001045135A2 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
06/21/2001WO2001045134A2 Method and apparatus for producing uniform process rates
06/21/2001WO2001044802A1 Method for the determination of gaseous chemical components in a process reactor for treating electrical components, in particular wafers
06/21/2001WO2001044540A2 Method and device for monitoring etching chambers
06/21/2001WO2001024220A3 Uniform gas distribution in large area plasma treatment device
06/21/2001WO2000075281A3 Supercritical fluid-assisted nebulization and bubble drying
06/21/2001WO2000073531A3 Copper sputtering target assembly and method of making same
06/21/2001US20010004478 Plasma treatment of titanium nitride formed by chemical vapor deposition
06/21/2001US20010004476 Applying pulse-shape voltage to insulator while insulator is irradiated with electron beam
06/21/2001US20010004185 Charged-particle beam exposure apparatus, exposure system, control method therefor, and device manufacturing method
06/21/2001US20010004047 Confines the high pressure required for ion generation to an ion source and deposits thin films in a low background pressure, in which energetic electrons generated from sputter target biased negative relative to ground are controlled
06/21/2001US20010004000 Plasma reactor with coil antenna of interleaved conductors
06/21/2001DE19961327A1 Unit to generate plasma in receptacle holding sample or component to be treated; has thin-walled electrode connected to generator and arranged in receptacle filled with processing gas to ignite plasma
06/20/2001EP1109230A2 Multijunction photovoltaic cell using a silicon or silicon-germanium substrate
06/20/2001EP1109196A1 Diamond-like coated components in an ion implanter for reducing x-ray emissions
06/20/2001EP1109166A1 Recording medium and method of manufacturing same
06/20/2001EP1108265A1 Plasma reactor with electrode arrangement for providing a grounding path for the plasma, and method of manufacturing the same
06/20/2001EP1108264A1 Method and device for surface processing with plasma at atmospheric pressure
06/20/2001EP1108263A1 Elevated stationary uniformity ring
06/20/2001EP1108216A1 High resolution analytical probe station
06/20/2001EP0832309A4 Cathodic arc cathode
06/20/2001CN1300524A processing system with dual ion sources
06/20/2001CN1300384A Retaining device for photo blanks
06/20/2001CN1300097A Electronic-beam exposing method
06/20/2001CN1300095A Sample positioning method for microscope with scanning probe
06/19/2001US6249000 Scanning probe microscope
06/19/2001US6248642 SIMOX using controlled water vapor for oxygen implants
06/19/2001US6248251 Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma
06/19/2001US6248250 RF plasma reactor with hybrid conductor and multi-radius dome ceiling
06/19/2001US6248223 Sputtering apparatus
06/19/2001US6248220 Radio frequency sputtering apparatus and film formation method using same
06/19/2001US6248219 Efficient sputtering of target within a confined plasma discharge space based upon a ratio of drop of time-averaged electric potential adjacent to electrode surfaces between which a radio frequency plasma discharge is generated
06/19/2001US6248206 Apparatus for sidewall profile control during an etch process
06/19/2001US6247425 Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor
06/14/2001WO2001043282A1 Variable load switchable impedance matching system
06/14/2001WO2001043267A1 Power supply with flux-controlled transformer
06/14/2001WO2001043160A1 Ionizer for gas cluster ion beam formation
06/14/2001WO2001043157A1 Ion implantation ion source, system and method
06/14/2001WO2001043155A1 Hollow electrode for plasma generation
06/14/2001WO2001042526A1 Plasma processing container internal member and production method therefor
06/14/2001US20010003655 Which can correct position of an electron-beam based on an amount of position of the electron beam, while reflecting charge-up of a semiconductor wafer used, obtaining alignment accuracy in superposing
06/14/2001US20010003607 Alternate steps of imp and sputtering process to improve sidewall coverage