Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
01/2002
01/02/2002EP1166321A1 Plasma processor with coil having variable rf coupling
01/02/2002EP1166320A2 Magnetic immersion lense with detection arrangement
01/02/2002EP1166319A1 Multi-electron -beam lithography apparatus with mutually different beam limiting apertures
01/02/2002EP0954620A4 Vapor deposition components and corresponding methods
01/02/2002EP0809718B1 Mechanically joined sputtering target and adapter therefor
01/02/2002EP0702843B1 Device for high energy ion implantation of the low or medium current kind and method for its use
01/02/2002CN1329678A Sputtering apparatus
01/02/2002CN1329338A Method for controlling electrostatic lens and ion implantation device
01/01/2002US6335783 Lithography system
01/01/2002US6335536 Method and apparatus for low voltage plasma doping using dual pulses
01/01/2002US6335535 Method for implanting negative hydrogen ion and implanting apparatus
01/01/2002US6335534 Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
01/01/2002US6335532 Convergent charged particle beam apparatus and inspection method using same
01/01/2002US6335530 Objective lens for scanning electron microscope
01/01/2002US6335293 Systems and methods for two-sided etch of a semiconductor substrate
01/01/2002US6335268 Plasma immersion ion processor for fabricating semiconductor integrated circuits
01/01/2002US6335129 Method for repairing pattern defect, photo mask using the method, and semiconductor device manufacturing method employing the photo mask
01/01/2002US6334983 Processing system
01/01/2002US6334405 Vacuum arc evaporation source and vacuum arc vapor deposition apparatus
12/2001
12/27/2001WO2001099159A2 Reduction of black silicon in deep trench etch
12/27/2001WO2001099145A1 A method for fault identification in a plasma process
12/27/2001WO2001099144A2 Ion implantation uniformity correction using beam current control
12/27/2001WO2001098788A2 Diagnosting reliability of vias by e-beam probing
12/27/2001WO2001098749A1 Ion beam milling system and method for electron microscopy specimen preparation
12/27/2001WO2001098553A1 Pulsed highly ionized magnetron sputtering
12/27/2001WO2001057908A3 A method and apparatus for implanting semiconductor wafer substrates
12/27/2001US20010055649 Coating, modification and etching of substrate surface with particle beam irradiation of the same
12/27/2001US20010055552 Plasma generator, impedance matching unit, radio frequency generator; for gases used in semiconductor manufacturing process
12/27/2001US20010054699 Decaborane ion source
12/27/2001US20010054698 Ion implantation uniformity correction using beam current control
12/27/2001US20010054697 Test method of mask for electron-beam exposure and method of electron-beam exposure
12/27/2001US20010054692 Scanning electron microscope
12/27/2001US20010054690 Electron optical system array, method of fabricating the same, charged-particle beam exposure apparatus, and device manufacturing method
12/27/2001US20010054605 Microwave applicator, plasma processing apparatus having the same, and plasma processing method
12/27/2001US20010054601 Etchant and polymer precursor species contain fluorine (especially CHF3 AND CH2F2), and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material
12/27/2001US20010054551 Increasing electroosmotic flow; reducing electrophoretic mobility; effective concentration of 3-(n-ethyl-n,n-dimethyl-ammonium)propanesulfonate; microfluidics
12/27/2001US20010054484 Plasma processor, cluster tool, and method of controlling plasma
12/27/2001US20010054483 Thermal control apparatus for inductively coupled rf plasma reactor having an overhead solenoidal antenna
12/27/2001US20010054391 Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
12/27/2001US20010054384 Vaporiser for generating feed gas for an arc chamber
12/27/2001US20010054383 Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply
12/27/2001US20010054382 Chemical vapor deposition system
12/27/2001CA2409411A1 Diagnosting reliability of vias by e-beam probing
12/26/2001CN1328695A Workpiece vibration damper
12/25/2001US6333634 Method for measuring radio-frequency current
12/25/2001US6333601 Planar gas introducing unit of a CCP reactor
12/25/2001US6333510 Electron beam exposure or system inspection of measurement apparatus and its method and height detection apparatus
12/25/2001US6333508 Illumination system for electron beam lithography tool
12/25/2001US6333273 Method and apparatus for dry etching
12/25/2001US6333271 Multi-step plasma etch method for plasma etch processing a microelectronic layer
12/25/2001US6333269 Plasma treatment system and method
12/25/2001US6333138 Exposure method utilizing partial exposure stitch area
12/25/2001US6333079 Feeding material gas for film formation into reactor inside of which is kept evacuated; decomposing gas into plasma by using power having high frequency to form deposited film on substrate provided inside reactor
12/25/2001US6332962 Thin-film magnetic recording head manufacture using selective imaging
12/25/2001US6332961 Device and method for detecting and preventing arcing in RF plasma systems
12/25/2001US6332947 Plasma processing apparatus and plasma processing method using the same
12/25/2001US6332425 Surface treatment method and system
12/20/2001WO2001097245A2 Sectored magnetic lens and method of use
12/20/2001WO2001096843A1 Apparatus and method for applying feedback control to a magnetic lens
12/20/2001WO2001024255A3 Interferometric method for endpointing plasma etch processes
12/20/2001WO2000019481A3 Low contamination high density plasma processing chamber and methods for processing a semiconductor substrate
12/20/2001WO1999050878A3 Method for generating a pulsed electron beam and a trigger plasma source for carrying out said method
12/20/2001US20010053605 Apparatus and method for reducing differential sputter rates
12/20/2001US20010053422 Diamond film depositing apparatus and method thereof
12/20/2001US20010052744 Monochrometer for electron beam
12/20/2001US20010052579 Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures
12/20/2001US20010052578 Charged-particle-beam microlithography methods exhibiting reduced thermal deformation of mark-defining member
12/20/2001US20010052577 Electron beam irradiation apparatus, electron beam irradiation method, original disk, stamper, and recording medium
12/20/2001US20010052576 Electron optical system array, method of manufacturing the same, charged-particle beam exposture apparatus, and device manufacturing method
12/20/2001US20010052573 Target mark member, method for manufacturing, and electron beam exposure apparatus thereof
12/20/2001US20010052467 Making thermally stable electromagnetic coil vanes, by photolithographically exposing high resolution, dense wire patterns in copper on both sides of ceramic substrate, plating additional copper and firing to eutectically bond
12/20/2001US20010052458 High frequency sputtering device
12/20/2001US20010052456 Self Ionized Plasma Sputtering
12/20/2001US20010052455 Allows deposition of a uniform layer of pure titanium on a layer of formed titanium nitride, for example; RF energy is supplied to a coil to generate a plasma and a separate DC bias is applied to the coil to control sputtering rate
12/20/2001US20010052394 High density plasma processing apparatus
12/20/2001US20010052393 Vacuum processing apparatus
12/20/2001US20010052350 Method for cleaning interior of etching chamber
12/20/2001US20010052322 Plasma process device
12/20/2001US20010052321 Single-substrate-processing apparatus for semiconductor
12/20/2001US20010052257 Nanotomography
12/20/2001EP1145273A3 Low contamination high density plasma etch chambers and methods for making the same
12/20/2001EP1145269A3 Method for generating a pulsed electron beam and a trigger plasma source for carrying out said method
12/20/2001DE10052889A1 Plasmabearbeitungseinrichtung und Plasmabearbeitungsverfahren für Substrate Plasma processing apparatus and plasma processing method for substrates
12/19/2001EP1164628A2 Processing system and method
12/19/2001EP0865662B1 Mounting a solid state particle detector within a magnetic deflection field
12/19/2001EP0653103B1 Dose modulation and pixel deflection for raster scan lithography
12/19/2001CN1327612A Semiconductor processing equipment having tiled ceramic liner
12/19/2001CN1327486A Apparatus for forming thin film
12/19/2001CN1327083A Ion electroplating apparatus and ion electroplating method
12/19/2001CN1076518C Plasma treating device
12/18/2001US6331754 Inductively-coupled-plasma-processing apparatus
12/18/2001US6331713 Movable ion source assembly
12/18/2001US6331712 Section formation observing method
12/18/2001US6331711 Correction for systematic, low spatial frequency critical dimension variations in lithography
12/18/2001US6331709 Alignment mark detection method, and alignment method, exposure method and device, and device production method making use of the alignment mark detection method
12/18/2001US6331234 Copper sputtering target assembly and method of making same
12/18/2001US6331227 Enhanced etching/smoothing of dielectric surfaces
12/13/2001WO2001095365A1 Film thickness measurement using electron-beam induced x-ray microanalysis
12/13/2001WO2001095364A1 Electron beam generator and method of electron beam irradiation
12/13/2001WO2001095363A1 Method and apparatus for controlling ion implantation during vacuum fluctuation