Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866) |
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01/02/2002 | EP1166321A1 Plasma processor with coil having variable rf coupling |
01/02/2002 | EP1166320A2 Magnetic immersion lense with detection arrangement |
01/02/2002 | EP1166319A1 Multi-electron -beam lithography apparatus with mutually different beam limiting apertures |
01/02/2002 | EP0954620A4 Vapor deposition components and corresponding methods |
01/02/2002 | EP0809718B1 Mechanically joined sputtering target and adapter therefor |
01/02/2002 | EP0702843B1 Device for high energy ion implantation of the low or medium current kind and method for its use |
01/02/2002 | CN1329678A Sputtering apparatus |
01/02/2002 | CN1329338A Method for controlling electrostatic lens and ion implantation device |
01/01/2002 | US6335783 Lithography system |
01/01/2002 | US6335536 Method and apparatus for low voltage plasma doping using dual pulses |
01/01/2002 | US6335535 Method for implanting negative hydrogen ion and implanting apparatus |
01/01/2002 | US6335534 Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes |
01/01/2002 | US6335532 Convergent charged particle beam apparatus and inspection method using same |
01/01/2002 | US6335530 Objective lens for scanning electron microscope |
01/01/2002 | US6335293 Systems and methods for two-sided etch of a semiconductor substrate |
01/01/2002 | US6335268 Plasma immersion ion processor for fabricating semiconductor integrated circuits |
01/01/2002 | US6335129 Method for repairing pattern defect, photo mask using the method, and semiconductor device manufacturing method employing the photo mask |
01/01/2002 | US6334983 Processing system |
01/01/2002 | US6334405 Vacuum arc evaporation source and vacuum arc vapor deposition apparatus |
12/27/2001 | WO2001099159A2 Reduction of black silicon in deep trench etch |
12/27/2001 | WO2001099145A1 A method for fault identification in a plasma process |
12/27/2001 | WO2001099144A2 Ion implantation uniformity correction using beam current control |
12/27/2001 | WO2001098788A2 Diagnosting reliability of vias by e-beam probing |
12/27/2001 | WO2001098749A1 Ion beam milling system and method for electron microscopy specimen preparation |
12/27/2001 | WO2001098553A1 Pulsed highly ionized magnetron sputtering |
12/27/2001 | WO2001057908A3 A method and apparatus for implanting semiconductor wafer substrates |
12/27/2001 | US20010055649 Coating, modification and etching of substrate surface with particle beam irradiation of the same |
12/27/2001 | US20010055552 Plasma generator, impedance matching unit, radio frequency generator; for gases used in semiconductor manufacturing process |
12/27/2001 | US20010054699 Decaborane ion source |
12/27/2001 | US20010054698 Ion implantation uniformity correction using beam current control |
12/27/2001 | US20010054697 Test method of mask for electron-beam exposure and method of electron-beam exposure |
12/27/2001 | US20010054692 Scanning electron microscope |
12/27/2001 | US20010054690 Electron optical system array, method of fabricating the same, charged-particle beam exposure apparatus, and device manufacturing method |
12/27/2001 | US20010054605 Microwave applicator, plasma processing apparatus having the same, and plasma processing method |
12/27/2001 | US20010054601 Etchant and polymer precursor species contain fluorine (especially CHF3 AND CH2F2), and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material |
12/27/2001 | US20010054551 Increasing electroosmotic flow; reducing electrophoretic mobility; effective concentration of 3-(n-ethyl-n,n-dimethyl-ammonium)propanesulfonate; microfluidics |
12/27/2001 | US20010054484 Plasma processor, cluster tool, and method of controlling plasma |
12/27/2001 | US20010054483 Thermal control apparatus for inductively coupled rf plasma reactor having an overhead solenoidal antenna |
12/27/2001 | US20010054391 Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
12/27/2001 | US20010054384 Vaporiser for generating feed gas for an arc chamber |
12/27/2001 | US20010054383 Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply |
12/27/2001 | US20010054382 Chemical vapor deposition system |
12/27/2001 | CA2409411A1 Diagnosting reliability of vias by e-beam probing |
12/26/2001 | CN1328695A Workpiece vibration damper |
12/25/2001 | US6333634 Method for measuring radio-frequency current |
12/25/2001 | US6333601 Planar gas introducing unit of a CCP reactor |
12/25/2001 | US6333510 Electron beam exposure or system inspection of measurement apparatus and its method and height detection apparatus |
12/25/2001 | US6333508 Illumination system for electron beam lithography tool |
12/25/2001 | US6333273 Method and apparatus for dry etching |
12/25/2001 | US6333271 Multi-step plasma etch method for plasma etch processing a microelectronic layer |
12/25/2001 | US6333269 Plasma treatment system and method |
12/25/2001 | US6333138 Exposure method utilizing partial exposure stitch area |
12/25/2001 | US6333079 Feeding material gas for film formation into reactor inside of which is kept evacuated; decomposing gas into plasma by using power having high frequency to form deposited film on substrate provided inside reactor |
12/25/2001 | US6332962 Thin-film magnetic recording head manufacture using selective imaging |
12/25/2001 | US6332961 Device and method for detecting and preventing arcing in RF plasma systems |
12/25/2001 | US6332947 Plasma processing apparatus and plasma processing method using the same |
12/25/2001 | US6332425 Surface treatment method and system |
12/20/2001 | WO2001097245A2 Sectored magnetic lens and method of use |
12/20/2001 | WO2001096843A1 Apparatus and method for applying feedback control to a magnetic lens |
12/20/2001 | WO2001024255A3 Interferometric method for endpointing plasma etch processes |
12/20/2001 | WO2000019481A3 Low contamination high density plasma processing chamber and methods for processing a semiconductor substrate |
12/20/2001 | WO1999050878A3 Method for generating a pulsed electron beam and a trigger plasma source for carrying out said method |
12/20/2001 | US20010053605 Apparatus and method for reducing differential sputter rates |
12/20/2001 | US20010053422 Diamond film depositing apparatus and method thereof |
12/20/2001 | US20010052744 Monochrometer for electron beam |
12/20/2001 | US20010052579 Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures |
12/20/2001 | US20010052578 Charged-particle-beam microlithography methods exhibiting reduced thermal deformation of mark-defining member |
12/20/2001 | US20010052577 Electron beam irradiation apparatus, electron beam irradiation method, original disk, stamper, and recording medium |
12/20/2001 | US20010052576 Electron optical system array, method of manufacturing the same, charged-particle beam exposture apparatus, and device manufacturing method |
12/20/2001 | US20010052573 Target mark member, method for manufacturing, and electron beam exposure apparatus thereof |
12/20/2001 | US20010052467 Making thermally stable electromagnetic coil vanes, by photolithographically exposing high resolution, dense wire patterns in copper on both sides of ceramic substrate, plating additional copper and firing to eutectically bond |
12/20/2001 | US20010052458 High frequency sputtering device |
12/20/2001 | US20010052456 Self Ionized Plasma Sputtering |
12/20/2001 | US20010052455 Allows deposition of a uniform layer of pure titanium on a layer of formed titanium nitride, for example; RF energy is supplied to a coil to generate a plasma and a separate DC bias is applied to the coil to control sputtering rate |
12/20/2001 | US20010052394 High density plasma processing apparatus |
12/20/2001 | US20010052393 Vacuum processing apparatus |
12/20/2001 | US20010052350 Method for cleaning interior of etching chamber |
12/20/2001 | US20010052322 Plasma process device |
12/20/2001 | US20010052321 Single-substrate-processing apparatus for semiconductor |
12/20/2001 | US20010052257 Nanotomography |
12/20/2001 | EP1145273A3 Low contamination high density plasma etch chambers and methods for making the same |
12/20/2001 | EP1145269A3 Method for generating a pulsed electron beam and a trigger plasma source for carrying out said method |
12/20/2001 | DE10052889A1 Plasmabearbeitungseinrichtung und Plasmabearbeitungsverfahren für Substrate Plasma processing apparatus and plasma processing method for substrates |
12/19/2001 | EP1164628A2 Processing system and method |
12/19/2001 | EP0865662B1 Mounting a solid state particle detector within a magnetic deflection field |
12/19/2001 | EP0653103B1 Dose modulation and pixel deflection for raster scan lithography |
12/19/2001 | CN1327612A Semiconductor processing equipment having tiled ceramic liner |
12/19/2001 | CN1327486A Apparatus for forming thin film |
12/19/2001 | CN1327083A Ion electroplating apparatus and ion electroplating method |
12/19/2001 | CN1076518C Plasma treating device |
12/18/2001 | US6331754 Inductively-coupled-plasma-processing apparatus |
12/18/2001 | US6331713 Movable ion source assembly |
12/18/2001 | US6331712 Section formation observing method |
12/18/2001 | US6331711 Correction for systematic, low spatial frequency critical dimension variations in lithography |
12/18/2001 | US6331709 Alignment mark detection method, and alignment method, exposure method and device, and device production method making use of the alignment mark detection method |
12/18/2001 | US6331234 Copper sputtering target assembly and method of making same |
12/18/2001 | US6331227 Enhanced etching/smoothing of dielectric surfaces |
12/13/2001 | WO2001095365A1 Film thickness measurement using electron-beam induced x-ray microanalysis |
12/13/2001 | WO2001095364A1 Electron beam generator and method of electron beam irradiation |
12/13/2001 | WO2001095363A1 Method and apparatus for controlling ion implantation during vacuum fluctuation |