Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
06/2002
06/20/2002US20020076490 Variable gas conductance control for a process chamber
06/20/2002US20020076481 Introducing first gas into chamber for reacting with surface of substrate to form layer on substrate, first gas creating first pressure, detecting change in pressure, supplying second gas in response to detection of change in pressure
06/20/2002US20020076367 Plasma processing apparatus
06/20/2002US20020076363 Scaleable inter-digitized tine non-thermal plasma reactor
06/20/2002US20020074946 Microwave plasma generator, method of decomposing organic halide, and system for decomposing organic halide
06/20/2002US20020074939 Charged particle beam apparatus
06/20/2002US20020074524 Magnetically shielded electromagnetic lens assemblies for charged-particle-beam microlithography systems
06/20/2002US20020074519 Electron beam treatment device
06/20/2002US20020074510 Curved I-core
06/20/2002US20020074509 Contaminant collector trap for ion implanter
06/20/2002US20020074506 Multiple numerical aperture electron beam projection lithography system
06/20/2002US20020074496 Tem sample slicing process
06/20/2002US20020074495 Sectored magnetic lens and method of use
06/20/2002US20020074494 Precise, in-situ endpoint detection for charged particle beam processing
06/20/2002US20020074226 Film forming apparatus
06/20/2002US20020073925 Apparatus and method for exposing a substrate to plasma radicals
06/20/2002US20020073924 Gas introduction system for a reactor
06/20/2002US20020073922 Can provide high temperature deposition, heating and efficient cleaning, for forming dielectric films having thickness uniformity, good gap fill capability, high density and low moisture
06/19/2002EP1215947A2 Scaleable inter-digitized tine non-thermal plasma reactor
06/19/2002EP1215717A1 Magnetron plasma processing apparatus
06/19/2002EP1215710A2 Method and apparatus for vacuum processing, semiconductor device manufacturing method and semiconductor device
06/19/2002EP1215709A2 Vacuum processing method
06/19/2002EP1215706A2 Electron beam treatment device
06/19/2002EP1215302A1 Sputtering device and film forming method
06/19/2002EP1214459A1 Pulsed plasma processing method and apparatus
06/19/2002CN1086512C Charged-beam exposure mask and charged-beam exposure method
06/18/2002US6407850 Auto tilt stage
06/18/2002US6407399 Uniformity correction for large area electron source
06/18/2002US6407398 Electron beam exposure apparatus and exposure method
06/18/2002US6407397 Charged particle beam exposure apparatus
06/18/2002US6407388 Corpuscular beam device
06/18/2002US6407387 Particle beam apparatus
06/18/2002US6407384 Energy filter and electron microscope using same
06/18/2002US6407373 Apparatus and method for reviewing defects on an object
06/18/2002US6407001 Integrated circuits
06/18/2002US6406759 Remote exposure of workpieces using a recirculated plasma
06/18/2002US6406599 Magnetron with a rotating center magnet for a vault shaped sputtering target
06/18/2002US6406590 Method and apparatus for surface treatment using plasma
06/18/2002US6406589 Plasma etching in vacuum chamber using sulfur hexafluoride
06/18/2002US6405423 Method for producing vacuum processing chambers
06/13/2002WO2002047135A1 Electron beam exposure system and electron lens
06/13/2002WO2002047131A1 Electron beam exposure system, irradiating position detecting method, and electron detector
06/13/2002WO2002047110A1 Magnetron sputtering apparatus
06/13/2002WO2002047109A2 Arc electrodes for synthesis of carbon nanostructures
06/13/2002WO2002046692A1 A method ad system for measuring in patterned structures
06/13/2002WO2002046489A1 Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
06/13/2002WO2002029849A3 System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber
06/13/2002WO2002027754A3 An apparatus for the backside gas cooling of a wafer in a batch ion implantation system
06/13/2002WO2002025695A3 Tunable focus ring for plasma processing
06/13/2002WO2002015222A3 Use of pulsed voltage in a plasma reactor
06/13/2002WO2001084130A3 A nanotube-based electron emission device and systems using the same
06/13/2002US20020072244 Photo-assisted remote plasma apparatus and method
06/13/2002US20020072240 Plasma etching apparatus with focus ring and plasma etching method
06/13/2002US20020072012 Charged beam exposure method and charged beam exposure apparatus
06/13/2002US20020071998 Forming a reticle by exposing a first portion of a photoresist layer to a first writing pattern, then exposing a second portion of the photoresist to a second writing pattern; photolithography
06/13/2002US20020071996 Lithographic projection apparatus; includes beam shaping device, positioning device for moving the beam, and a sensor dependent on the number of charged particles impinging on a mark region of a mask
06/13/2002US20020071994 Dividing the mask into partial areas, forming partial masks which have apertures with patterns identical with plurality of partial areas, exposing the patterns of masks on a mask substrate by electron beam proximity exposure method
06/13/2002US20020070699 Stage apparatus including non-containing gas bearings and microlithography apparatus comprising same
06/13/2002US20020070672 Electron beam ion source with integral low-temperature vaporizer
06/13/2002US20020070670 Microwave plasma generator, method of decomposing organic halide, and system for decomposing organic halide
06/13/2002US20020070669 Microwave plasma generator, method of decomposing organic halide, and system for decomposing organic halide
06/13/2002US20020070647 Nanostructure plasma source
06/13/2002US20020070361 Gas cluster ion beam size diagnostics and workpiece processing
06/13/2002US20020070357 Magnetron negative ion sputter source
06/13/2002US20020070356 Electron beam proximity exposure apparatus and mask unit therefor
06/13/2002US20020070347 Faraday system for ion implanters
06/13/2002US20020070346 Split magnetic lens for controlling a charged particle beam
06/13/2002US20020070345 Evacuation use sample chamber and circuit pattern forming apparatus using the same
06/13/2002US20020070340 Apparatus for inspection of semiconductor wafers and masks using a low energy electron microscope with two illuminating beams
06/13/2002US20020069971 Plasma processing apparatus and plasma processing method
06/13/2002US20020069970 Temperature controlled semiconductor processing chamber liner
06/13/2002US20020069968 Suspended gas distribution manifold for plasma chamber
06/13/2002US20020069966 Scanning plasma reactor
06/13/2002US20020069827 Allows the quality of milk supplied by each animal to be accurately monitored and also allows the health of the udders of the milked animals to be monitored
06/13/2002US20020069824 Ion implantation system having increased implanter source life
06/13/2002DE10147133A1 Elektronenstrahl-Belichtungsvorrichtung Electron beam exposure apparatus
06/13/2002DE10061798A1 Monochromator for charged particles has Wien filters arranged serially in particle propagation direction, each rotated about optical axis in azimuth by 90 degrees relative to others
06/13/2002DE10058326C1 Induktiv gekoppelte Hochfrequenz-Elektronenquelle mit reduziertem Leistungsbedarf durch elektrostatischen Einschluss von Elektronen Inductively coupled radio-frequency electron source with reduced power consumption by electrostatic confinement of electrons
06/12/2002EP1213749A1 Plasma processing apparatus and method of plasma processing
06/12/2002EP1213744A2 Ion implantation systems and methods
06/12/2002EP1212777A1 Ion beam vacuum sputtering apparatus and method
06/12/2002EP1212775A1 Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof
06/12/2002EP1212692A1 Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
06/12/2002EP1212611A2 Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma
06/12/2002EP0585445B1 Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
06/12/2002CN1353859A Apparatus for improving plasmia distribution and performance in inductively coupled plasma
06/12/2002CN1353445A Method and equipment for radiating ion beam, related method and its equipment
06/12/2002CN1353443A Ion source and its operating method
06/12/2002CN1353442A Apparatus and method for producing indium ion beam
06/12/2002CN1353306A Equipment and method for directly observing water-contained biologic sample in ambient scanning electronic microscope
06/11/2002US6404134 Plasma processing system
06/11/2002US6404115 Particle beam emitting assembly
06/11/2002US6403973 Electron beam exposure method and apparatus and semiconductor device manufactured using the same
06/11/2002US6403972 Methods and apparatus for alignment of ion beam systems using beam current sensors
06/11/2002US6403971 Beam-adjustment methods and apparatus for charged-particle-beam microlithography
06/11/2002US6403969 Ion implantation system and ion implantation method
06/11/2002US6403968 Scanning electron microscope
06/11/2002US6403967 Magnet system for an ion beam implantation system using high perveance beams
06/11/2002US6403958 Method for preparing a sample for a transmission electron microscope
06/11/2002US6403491 Etch method using a dielectric etch chamber with expanded process window