Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
10/2002
10/31/2002WO2001059807A9 In-situ probe for optimizing electron beam inspection and metrology based on surface potential
10/31/2002US20020162088 Charged particle beam exposure system using aperture mask in semiconductor manufacture
10/31/2002US20020161534 Method and apparatus for inspecting a substrate
10/31/2002US20020160620 Method for producing coated workpieces, uses and installation for the method
10/31/2002US20020160311 Charged particle beam exposure apparatus, device manufacturing method, and charged particle beam applied apparatus
10/31/2002US20020160125 Pulsed plasma processing method and apparatus
10/31/2002US20020160124 Vacuum processing method
10/31/2002US20020159216 Vacuum plasma processor and method of operating same
10/31/2002US20020158616 Power supply with flux-controlled transformer
10/31/2002US20020158213 Ion implantation apparatus and insulating bushing therefor
10/31/2002US20020158200 Electron microscope equipped with x-ray spectrometer
10/31/2002US20020158199 Semiconductor inspection system
10/31/2002US20020158198 Charged particle beam apparatus
10/31/2002US20020157945 Apparatus for applying thin layers to a substrate
10/31/2002US20020157793 Toroidal plasma source for plasma processing
10/31/2002US20020157609 Vacuum arc vapor deposition apparatus and vacuum arc vapor deposition method
10/31/2002US20020157608 Performance evaluation method for plasma processing apparatus
10/31/2002DE10210006A1 Charged particle generator, produces electric field between discharging electrode and free end of charged particle generating electrode
10/31/2002DE10120405A1 Vorrichtung zur Erzeugung eines Niedertemperatur-Plasmas An apparatus for generating a low temperature plasma
10/31/2002DE10119058A1 Instabilities detecting method for HF-excited plasma, especially in semiconductor manufacture, requires detection of stray field from plasma outside of containment chamber
10/30/2002EP1253621A2 Low temperature plasma generating device
10/30/2002EP1253620A2 Ion beam scanning method and apparatus
10/30/2002EP1253619A2 Charged particle beam exposure apparatus and device manufacturing method using same
10/30/2002EP1253216A1 Method and apparatus for sequential plasma treatment
10/30/2002EP1252822A2 Microwave CVD method for deposition of robust barrier coatings
10/30/2002EP1252647A1 Impedance adapted microwave energy coupling device
10/30/2002EP1252646A1 Method for detecting geometrical-optical aberrations
10/30/2002EP1252359A1 Improved reactor with heated and textured electrodes and surfaces
10/30/2002EP1252358A1 System and method for depositing inorganic/organic dielectric films
10/30/2002EP1252357A1 Conical sputtering target
10/30/2002EP1105547A4 Dual collimator physical-vapor deposition apparatus
10/30/2002CN1377509A High transmission, low energy beamline architecture for ion implanter
10/30/2002CN1376927A Broadband design of detecting analytic system
10/30/2002CN1376906A Magnetic scanning detector and probe thereof
10/29/2002US6472881 Liquid metal ion source and method for measuring flow impedance of liquid metal ion source
10/29/2002US6472822 Pulsed RF power delivery for plasma processing
10/29/2002US6472674 Electron beam exposure system and method of manufacturing devices using the same
10/29/2002US6472673 Lithographic method for producing an exposure pattern on a substrate
10/29/2002US6472672 Electron beam exposure apparatus and its control method
10/29/2002US6472663 Electron microscope
10/29/2002US6472123 Photolithography devices such as reticles and semiconductor masks, clear fields by electron-beam processing; exposing a first portion of a photoresist layer over said preform with an electron beam in accordance with a first writing pattern
10/29/2002US6471836 Sputtering apparatus
10/29/2002US6471831 Apparatus and method for improving film uniformity in a physical vapor deposition system
10/29/2002US6471830 Integrated circuit metallization and collimated deposition; real time variable antenna positioning relative to target and substrate; antenna is not consumed; enhanced ionization; uniformity; data storage thin film heads, flat panel displays
10/29/2002US6471821 Plasma reactor and method
10/29/2002US6471435 Flexural joint
10/29/2002US6470823 Apparatus and method for forming a deposited film by a means of plasma CVD
10/24/2002WO2002084724A1 Method for surface treatment and system for fabricating semiconductor device
10/24/2002WO2002084719A1 Electron beam exposing device and exposure method
10/24/2002WO2002084713A2 Occluding beamline ion implanter
10/24/2002WO2002084703A1 Magnetron sputtering system
10/24/2002WO2002084702A2 Sputtering deposition apparatus and method for depositing surface films
10/24/2002WO2002084701A2 Plasma reactor electrode
10/24/2002WO2002084700A1 Inductively coupled plasma control with external magnetic material
10/24/2002WO2002084699A1 Apparatus and method for controlling the voltage applied to an electrostatic shield used in a plasma generator
10/24/2002WO2002084698A1 Inductively coupled plasma source with controllable power distribution
10/24/2002WO2002084697A1 Detection of backscattered electrons from a substrate
10/24/2002WO2002084696A1 Electron beam generator and electron beam aligner
10/24/2002WO2002083976A1 Apparatus and method for epitaxial sputter deposition of multi-compound magnetic epilayers with high deposition rate
10/24/2002WO2002083975A1 Apparatus and method for epitaxial sputter deposition of epilayers and high quality films
10/24/2002WO2002003419A3 Device for forming nanostructures on the surface of a semiconductor wafer by means of ion beams
10/24/2002US20020155714 Antireflectivity coating; using oxygen, chlorine, hydrogen bromide gas mixtures
10/24/2002US20020155644 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
10/24/2002US20020155635 Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes
10/24/2002US20020154279 Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
10/24/2002US20020153496 Control of exposure in charged-particle-beam microlithography based on beam-transmissivity of the reticle
10/24/2002US20020153495 Magnetically shielded enclosures for housing charged-particle-beam systems
10/24/2002US20020153494 Apparatus and methods for reducing coulombic blur in charged-particle-beam microlithography
10/24/2002US20020153493 Ion source vaporizer
10/24/2002US20020153484 Transmission electron microscope equipped with energy filter
10/24/2002US20020153483 Detector optics for electron beam inspection system
10/24/2002US20020153350 Method for preventing contamination in a plasma process chamber
10/24/2002US20020153349 Plasma processing method and apparatus
10/24/2002US20020153247 Apparatus and method for coating substrates
10/24/2002US20020153242 Method of manufacturing an object in a vacuum recipient
10/24/2002US20020153104 Plasma etching chamber and method for manufacturing photomask using the same
10/24/2002US20020153103 Plasma treatment apparatus
10/24/2002US20020152960 Thin-film disposition apparatus
10/24/2002DE10119533A1 Process for controlling a plasma in a magnetron sputtering process comprises locally influencing the plasma using screens arranged along a magnetron track
10/24/2002DE10114022C1 Microwave oven comprises a cylindrical hollow chamber, a gas discharge vessel arranged longitudinal and parallel to a longitudinal edge, and a device which reflects microwaves
10/23/2002EP1251547A1 Cylindrical magnetron shield structure
10/23/2002EP1204984A4 Electron beam shielding apparatus and methods for shielding electron beams
10/23/2002EP0993604B1 Method for detecting an element in a sample
10/22/2002US6469919 Power supplies having protection circuits
10/22/2002US6469775 Photolithographic device is registered to the wafer-in-process to prevent radiant energy from being directly transmitted into the photoresist material overlaying the vias.
10/22/2002US6469448 Inductively coupled RF plasma source
10/22/2002US6469309 Vacuum sealed specimen holder support with motion damping means
10/22/2002US6468925 Plasma enhanced chemical vapor deposition process
10/22/2002US6468404 Apparatus and method for reducing redeposition in a physical vapor deposition system
10/22/2002US6468388 Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate
10/22/2002US6468387 Apparatus for generating a plasma from an electromagnetic field having a lissajous pattern
10/22/2002US6468386 Gas delivery system
10/22/2002US6468385 Apparatus and method for preventing etch chamber contamination
10/22/2002CA2222369C Endcap for indirectly heated cathode of ion source
10/17/2002WO2002082861A1 Rf power process apparatus and methods
10/17/2002WO2002082518A1 An apparatus and a method for forming a pattern using a crystal structure of material
10/17/2002WO2002082499A2 Conductive collar surrounding semiconductor workpiece in plasma chamber
10/17/2002WO2002082498A1 Plasma processing apparatus and method comprising a thermally isolated showerhead
10/17/2002WO2002082497A1 Device and method for controlling focussed electron beams
10/17/2002WO2002082496A2 Method and system for controlling beam scanning in an ion implantation device