Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
02/2003
02/06/2003US20030025088 Charged particle beam exposure system and method
02/06/2003US20030025087 Apparatus for correlating an optical image and a SEM image and method of use thereof
02/06/2003US20030025085 Low-aberration deflectors for use in charged-particle-beam optical systems, and methods for fabricating such deflectors
02/06/2003US20030025076 Electron-optical system with einzel lens and inspection method using the same
02/06/2003US20030025075 Scanning confocal electron microscope
02/06/2003US20030024907 Pulsing intelligent RF modulation controller
02/06/2003US20030024900 Variable aspect ratio plasma source
02/06/2003US20030024899 Exposure method utilizing optical proximity corrected exposure patterns, an apparatus for generating optical proximity corrected exposure data, and an exposure apparatus for optical proximity corrected exposure data
02/06/2003US20030024807 A gas supply provides a chemically reactive molecular gas to an ion source that generates a divergent ion current directed at a target.
02/06/2003US20030024647 Plasma processing apparatus
02/06/2003US20030024646 Plasma etching apparatus and plasma etching method
02/06/2003US20030024643 Plasma etching system and method
02/06/2003US20030024642 Method and apparatus for processing semiconductor substrates
02/06/2003US20030024478 Surface processing apparatus
02/05/2003CN1395814A Apparatus for fixing electrode in plasma polymerizing apparatus
02/04/2003US6515426 Ion beam processing apparatus and method of operating ion source therefor
02/04/2003US6515409 Charged-particle beam exposure apparatus, exposure system, control method therefor, and device manufacturing method
02/04/2003US6515408 Ion beam apparatus and a method for neutralizing space charge in an ion beam
02/04/2003US6515381 Cantilever stage
02/04/2003US6515292 A photocathode electron projector is formed with a sample attached to an anode and a patterned quartz mask attached to a cathode. The quartz mask is patterned with Au-Pd layers that emit electrons when illuminated by ultraviolet light that is
02/04/2003US6515291 Electron beam drawing apparatus and method of the same
02/04/2003US6515290 Bulk gas delivery system for ion implanters
02/04/2003US6515288 Vacuum bearing structure and a method of supporting a movable member
02/04/2003US6515287 Sectored magnetic lens and method of use
02/04/2003US6514866 Chemically enhanced focused ion beam micro-machining of copper
02/04/2003US6514582 Quartz glass member for use in dry etching and dry etching system equipped with the same
02/04/2003US6514390 Induction coupled plasma (ICP) generators, for coating semiconductor wafers by coupling electromagnetic energy and magnetically shielding targets; noncontamination
02/04/2003US6514377 Apparatus for and method of processing an object to be processed
02/04/2003US6514376 Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
02/04/2003US6514375 Dry etching endpoint detection system
02/04/2003US6514347 Apparatus and method for plasma treatment
02/04/2003US6513452 Adjusting DC bias voltage in plasma chamber
02/04/2003CA2279229C Method and apparatus to produce large inductive plasma for plasma processing
01/2003
01/30/2003WO2003009363A1 Plasma processor and plasma processing method
01/30/2003WO2003008662A2 Bypass set up for integration of remote optical endpoint for cvd chambers
01/30/2003WO2003008659A2 Collimated sputtering of cobalt
01/30/2003WO2003008656A2 Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles
01/30/2003WO2002073652A3 Methods and apparatus for oxygen implantation
01/30/2003WO2002054835A3 Addition of power at selected harmonics of plasma processor drive frequency
01/30/2003WO2002054442A3 Ion beam collimating system
01/30/2003WO2002037524A3 Bi mode ion implantation with non-parallel ion beams
01/30/2003WO2002019387A3 Transmission line based inductively coupled plasma source with stable impedance
01/30/2003WO2001001442A9 A plasma reaction chamber component having improved temperature uniformity
01/30/2003US20030022512 Plasma etching method
01/30/2003US20030022511 Plasma ashing process
01/30/2003US20030022078 A selected region(in which a gate electrode of transistor, a contact or via hole is formed) is selected from the pattern, and when a minute shape is present in selected region, the selected region is redivided into a pluralilty of ractangles
01/30/2003US20030022077 Wafer is located in a plane where spherical aberrations of the projection column reduce a negative defocussing effect caused by chromatic aberrations in the projection column
01/30/2003US20030021910 Plasma vapor deposition using microwaves
01/30/2003US20030021909 Method and device for coating substrates
01/30/2003US20030020411 Plasma processing apparatus and method of controlling chemistry
01/30/2003US20030020016 Scanning particle mirror microscope
01/30/2003US20030020015 Charge amount measurement method, shift value measurement method of charged beam, charge amount measuring device and shift value measuring device of charged beam
01/30/2003US20030019850 Surface modification process on metal dentures, products produced thereby, and the incorporated system thereof
01/30/2003US20030019839 Maintenance method and system for plasma processing apparatus etching and apparatus
01/30/2003US20030019745 Oblique deposition apparatus
01/30/2003US20030019740 A target body with a mirror-symmetrical, concavely constructed atomization surface and a magnetic circuit arrangement operable to generate a magnetic field over the surface; stable plasma discharge
01/30/2003US20030019739 Multilayer film deposition apparatus, and method and apparatus for manufacturing perpendicular-magnetic-recording media
01/30/2003US20030019584 Chuck assembly of etching apparatus for preventing byproducts
01/30/2003US20030019582 Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
01/30/2003US20030019581 Rf bias control in plasma deposition and etch systems with multiple rf power sources
01/30/2003US20030019580 Method of and apparatus for tunable gas injection in a plasma processing system
01/30/2003US20030019579 Dry etching apparatus for manufacturing semiconductor devices
01/29/2003EP1280192A2 Device for forming nanostructures on the surface of a semiconductor wafer by means of ion beams
01/29/2003EP1280184A2 Inspecting system for particle-optical imaging of an object, deflection device for charged particles and method for operating the same
01/29/2003EP1279183A2 A nanotube-based electron emission device and systems using the same
01/29/2003EP1278825A2 Methods of producing membrane vesicles
01/29/2003EP0933803B1 Method of plasma treatment
01/29/2003EP0914670B1 Cathode arc source
01/29/2003CN1394351A Liner for semiconductor etching chamber
01/29/2003CN1393860A Electronic beam recording apparatus and electronic beam recording method
01/29/2003CN1393691A Electronic microscope with high time resolution
01/28/2003US6512237 Charged beam exposure method and charged beam exposure apparatus
01/28/2003US6512235 Nanotube-based electron emission device and systems using the same
01/28/2003US6512228 Scanning electron microscope
01/28/2003US6512227 Method and apparatus for inspecting patterns of a semiconductor device with an electron beam
01/28/2003US6511917 Plasma treatment apparatus and method
01/28/2003US6511608 Plasma processing method
01/28/2003US6511585 Enhanced macroparticle filter and cathode arc source
01/28/2003US6511584 Configuration for coating a substrate by means of a sputtering device
01/28/2003US6511577 Reduced impedance chamber
01/28/2003US6511575 Treatment apparatus and method utilizing negative hydrogen ion
01/28/2003US6511048 Electron beam lithography apparatus and pattern forming method
01/28/2003US6510755 Slide apparatus and its stage mechanism for use in vacuum
01/23/2003WO2003007358A1 Plasma reactor for manufacturing electronic components
01/23/2003WO2003007330A1 Sample electrification measurement method and charged particle beam apparatus
01/23/2003WO2003007329A1 Sample chamber device for an electron microscope
01/23/2003WO2003007328A1 Device for reducing the impact of distortions in a microscope
01/23/2003WO2003007327A2 Shallow-angle interference process and apparatus for determining real-time etching rate
01/23/2003WO2003007326A2 Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing
01/23/2003WO2002057507A9 Method for making a film by pulsed laser ablation
01/23/2003WO2002043905A3 A method and apparatus for the production of metal powder granules by electric discharge
01/23/2003US20030017709 System for, and method of, etching a surface on a wafer
01/23/2003US20030017401 Stencil reticles for use in charged-particle-beam microlithography, and pattern-determination methods for such reticles
01/23/2003US20030016035 Direct detection of dielectric etch system magnet driver and coil malfunctions
01/23/2003US20030015965 Inductively coupled plasma reactor
01/23/2003US20030015671 Apparatus for assisting backside focused ion beam device modification
01/23/2003US20030015661 Radioactive electron emitting microchannel plate
01/23/2003US20030015505 Apparatus and method for sterilization of articles using capillary discharge atmospheric plasma
01/23/2003US20030015421 Collimated sputtering of cobalt
01/23/2003US20030015293 Apparatus for plasma treatment