Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
03/2003
03/18/2003US6535785 Gas apparatus comprising power sources, detectors, display screens and controllers for modulating power amplitude, cycles and frequency
03/18/2003US6535781 Apparatus for modifying coordinates
03/18/2003US6535779 Apparatus and method for endpoint control and plasma monitoring
03/18/2003US6534922 Plasma processing apparatus
03/18/2003US6534775 Electrostatic trap for particles entrained in an ion beam
03/18/2003US6534766 Charged particle beam system and pattern slant observing method
03/18/2003US6534423 Use of inductively-coupled plasma in plasma-enhanced chemical vapor deposition reactor to improve film-to-wall adhesion following in-situ plasma clean
03/18/2003US6534007 Optoelectronic detector; completion of plasma cleaning chemical vapor deposition chamber
03/18/2003US6533910 Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
03/18/2003US6533908 Device and method for coating substrates in a vacuum utilizing an absorber electrode
03/18/2003US6533907 Method of producing amorphous silicon for hard mask and waveguide applications
03/18/2003US6533894 RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
03/13/2003WO2003021644A1 Chamber shields for a plasma chamber
03/13/2003WO2003021630A1 Method and apparatus for tuning ion implanters
03/13/2003WO2003021186A1 Method for measuring dimensions of sample and scanning electron microscope
03/13/2003WO2003021002A1 Apparatus and method for plasma processing
03/13/2003WO2003002990A3 Using scatterometry to develop real time etch image
03/13/2003WO2002084713A3 Occluding beamline ion implanter
03/13/2003WO2002084701A3 Plasma reactor electrode
03/13/2003WO2002082499A3 Conductive collar surrounding semiconductor workpiece in plasma chamber
03/13/2003WO2002063654A3 System and method for amplifying an angle of divergence of a scanned ion beam
03/13/2003WO2002061787A3 Method and apparatus having pin electrode for surface treatment using capillary discharge plasma
03/13/2003WO2002019366A3 Cold cathode ion beam deposition apparatus with segregated gas flow
03/13/2003WO2002003763B1 Vacuum plasma processor apparatus and method
03/13/2003US20030049937 Apparatus and method for surface treatment to substrate
03/13/2003US20030049558 Vacuum processing method, vacuum processing apparatus, semiconductor device manufacturing method and semiconductor device
03/13/2003US20030049468 Gas impervious protective coatings; vapor vacuum deposition
03/13/2003US20030049372 Vapor deposition; gas flow; controlling heaters; monitoring temperature; uniformity
03/13/2003US20030048427 Electron beam lithography system having improved electron gun
03/13/2003US20030047691 Directing electron beam activated etchant gas toward excess material defect on photolithography mask; directing electron beam toward defect to activate electron beam activated etchant gas near impact point of beam to remove defect
03/13/2003US20030047689 Holder support device
03/13/2003US20030047682 Detecting apparatus and device manufacturing method
03/13/2003US20030047536 Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma
03/13/2003US20030047449 Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
03/13/2003US20030047443 For providing sputtered atoms for deposition on a substrate
03/13/2003US20030047442 Creating an electric discharge in a starting gas between two exciting electrodes to which is applied an electric supply voltage, so that the discharge excites at least a portion of the gaseous constituents of the starting gas
03/13/2003US20030047282 Surface processing apparatus
03/13/2003US20030047140 Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
03/13/2003US20030047138 Spiral gas flow plasma reactor
03/13/2003US20030047137 Apparatus for evaluating plasma polymerized polymer layer using uv spectrometer
03/13/2003US20030046976 Gas analyzing method and gas analyzer for semiconductor treater
03/12/2003EP1291900A2 Apparatus for detecting a fine geometry on a surface of a sample and method of manufacturing a semiconductor device
03/12/2003EP1291680A2 Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations
03/12/2003EP1291077A2 Microwave reactor and method for controlling reactions of activated molecules
03/12/2003EP1290927A2 Integrated resonator and amplifier system
03/12/2003EP1290926A1 High frequency plasma source
03/12/2003EP1290714A1 Scanning electron microscope
03/12/2003EP1290685A1 Electron-beam lithography
03/12/2003EP1290500A1 Active reticle, method for making same, ion projecting lithography method using same and equipment therefor
03/12/2003EP1290430A1 Apparatus for inspection of semiconductor wafers and masks using a low energy electron microscope with two illuminating beams
03/12/2003EP0922122B1 Plasma cvd system with an array of microwave plasma electrodes and plasma cvd process
03/12/2003CN1402830A Precision stage
03/12/2003CN1402322A Monitoring system and method for monitoring process condition change by electron beam
03/12/2003CN1103113C Electrode assembly and method for assembly and method for treating wafer using same
03/11/2003US6532161 Power supply with flux-controlled transformer
03/11/2003US6531942 Method of cooling an induction coil
03/11/2003US6531811 Liquid metal ion source and method for producing the same
03/11/2003US6531786 Durable reference marks for use in charged-particle-beam (CPB) microlithography, and CPB microlithography apparatus and methods comprising same
03/11/2003US6531698 Particle-optic illuminating and imaging system with a condenser-objective single field lens
03/11/2003US6531697 Method and apparatus for scanning transmission electron microscopy
03/11/2003US6531251 Calculating exposure dose at specified regions of the sensitive substrate to determine expected proximity effects at the specified regions; mathematical equations; making microelectronics
03/11/2003US6531069 Reactive Ion Etching chamber design for flip chip interconnections
03/11/2003US6531031 Plasma etching installation
03/11/2003US6531030 Inductively coupled plasma etching apparatus
03/11/2003US6531029 Vacuum plasma processor apparatus and method
03/11/2003US6530342 Large area plasma source
03/11/2003US6530341 Deposition apparatus for manufacturing thin film
03/06/2003WO2003019639A1 Treating device using treating gas, and method of operating the same
03/06/2003WO2003019636A1 Production method and production device for semiconductor device
03/06/2003WO2003019635A1 Method and system for single ion implantation
03/06/2003WO2003019633A1 Method of surface-processing components of vacuum processing device
03/06/2003WO2003019624A2 Dielectric barrier discharge process for depositing silicon nitride film on substrates
03/06/2003WO2003019613A1 Method and apparatus for improved ion bunching in an ion implantation system
03/06/2003WO2003019612A1 Split double gap buncher and method for ion bunching in an ion implantation system
03/06/2003WO2003019611A1 Particle beam detector comprising means for determining the beam-profile and dosage
03/06/2003WO2003019163A1 Method for determining the structure of a polyatomic molecule.
03/06/2003WO2003018870A2 Device for reactive plasma treatment of substrates and method for the use thereof
03/06/2003WO2003018867A1 Semiconductor processing using an efficiently coupled gas source
03/06/2003WO2003018185A2 Method of producing powder with composite grains and the device for carrying out said method
03/06/2003WO2002092873A3 Relationship to other applications and patents
03/06/2003WO2002078044A3 Method of processing a surface of a workpiece
03/06/2003WO2002078042A3 Neutral particle beam processing apparatus
03/06/2003WO2002075772A3 Simultaneous flooding and inspection for charge control in an electron beam inspection machine
03/06/2003WO2002071438A3 Capillary discharge plasma apparatus and method for surface treatment using the same
03/06/2003WO2002058102A3 Adjustable conductance limiting aperture for ion implanters
03/06/2003US20030046013 Voltage current sensor with high matching directivity
03/06/2003US20030045012 Liquid crystal mixtue of polar compounds with positive dielectric anisotropy comprising fluorobenzene derivatives
03/06/2003US20030044697 Methods and apparatus for correcting the proximity effect in a charged-particle-beam microlithography system and devices manufactured from the same
03/06/2003US20030043358 Methods for determining focus and astigmatism in charged-particle-beam microlithography
03/06/2003US20030043357 Vacuum chamber having instrument- mounting bulkhead exhibiting reduced deformation in response to pressure differential, and energy-beam systems comprising same
03/06/2003US20030042921 High resolution analytical probe station
03/06/2003US20030042899 Method and instrument for measuring a magnetic field, a method for measuring a current waveform, and method for measuring an electric field
03/06/2003US20030042832 Processor and method for processing
03/06/2003US20030042434 Multiple electron beam lithography system with multiple beam modulated laser illumination
03/06/2003US20030042433 Methods for determining a pattern on a microlithography reticle to minimize proximity effects in pattern elements in chips located on substrate
03/06/2003US20030042432 Method for molecular nitrogen implantation dosage monitoring
03/06/2003US20030042427 Method and apparatus for tuning ion implanters
03/06/2003US20030042411 Positive and negative ion beam merging system for neutral beam production
03/06/2003US20030042227 Apparatus and method for tailoring an etch profile
03/06/2003US20030042131 Vapor deposition of films; high density plasma