Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
01/2004
01/29/2004US20040016402 Methods and apparatus for monitoring plasma parameters in plasma doping systems
01/29/2004DE10230929A1 Verfahren zum elektronenmikroskopischen Beobachten einer Halbleiteranordnung und Vorrichtung hierfür A method for electron microscopic observation of a semiconductor device and apparatus therefor
01/29/2004CA2493279A1 Plasma reactor for carrying out gas reactions and method for the plasma-supported reaction of gases
01/28/2004EP1385193A2 Objective lens for an electron microscopy system, and electron microscopy system
01/28/2004EP1385192A2 Device working with beams of charged particles
01/28/2004EP1384395A1 Production of nanocrystal beams
01/28/2004EP1384257A2 Ionized pvd with sequential deposition and etching
01/28/2004EP1114201B1 Device and method for the vacuum plasma processing of objects
01/28/2004CN1471727A Etching of high aspect ratio features in a substrate
01/28/2004CN1470947A Proximity effect correction method of electronic beam exposure and use thereof
01/28/2004CN1136011C Method and apparatus for inactivating contaminants inbiological fluid
01/27/2004US6683425 Null-field magnetron apparatus with essentially flat target
01/27/2004US6683320 Through-the-lens neutralization for charged particle beam system
01/27/2004US6683317 Electrically insulating vacuum coupling
01/27/2004US6683316 Apparatus for correlating an optical image and a SEM image and method of use thereof
01/27/2004US6683311 Deployable particle collector for space particle instruments
01/27/2004US6683307 Scanning type charged particle beam microscope
01/27/2004US6682637 Magnetron sputter source
01/27/2004US6682634 Apparatus for sputter deposition
01/27/2004US6682630 Uniform gas distribution in large area plasma source
01/27/2004US6682627 Process chamber having a corrosion-resistant wall and method
01/22/2004WO2004008816A2 Method and device for substrate etching with very high power inductively coupled plasma
01/22/2004WO2004008508A1 Exposure transfer mask and exposure transfer mask pattern exchange method
01/22/2004WO2004008502A2 Multirate processing for metrology of plasma rf source
01/22/2004WO2004008479A2 Vacuum sputtering cathode
01/22/2004WO2004008478A2 Cathode for vacuum sputtering treatment machine
01/22/2004WO2004008477A2 Heating jacket for plasma etching reactor, and etching method using same
01/22/2004WO2004008476A1 Controlling the characteristics of ribbon-shaped implanter ion-beams
01/22/2004WO2004008475A1 Ion beam device and ion beam processing method, and holder member
01/22/2004WO2004008255A2 Method and apparatus for measuring critical dimensions with a particle beam
01/22/2004WO2004007791A1 Target support assembly
01/22/2004WO2003058671A3 Target end station for the combinatory ion implantation and method of ion implantation
01/22/2004US20040014325 Plasma etching equipment
01/22/2004US20040013949 Electron beam exposure-use mask and electron beam exposure method
01/22/2004US20040013820 Method for making films utilizing a pulsed laser for ion injection and deposition
01/22/2004US20040012765 Electron beam exposure apparatus and semiconductor device manufacturing method
01/22/2004US20040012320 Process for structural modification of surfaces by treatment with an atomic or molecular gaseous medium excited to metastable level
01/22/2004US20040012319 Rf loaded line type capacitive plasma source for broad range of operating gas pressure
01/22/2004US20040011966 Energy beam exposure method and exposure apparatus
01/22/2004US20040011964 Focused ion beam apparatus
01/22/2004US20040011959 Scanning electron microscope
01/22/2004US20040011770 Method of and structure for controlling electrode temperature
01/22/2004US20040011641 For forming a high density thin film; efficiency
01/22/2004US20040011640 Using electric field for partially ionizing process gas; accelerating ionized gas toward target region, ejecting target constituents and partially depositing ejected target constituents on substrate region; generating magnetic field
01/22/2004US20040011467 Materials and gas chemistries for processing systems
01/22/2004US20040011466 Plasma processing apparatus
01/22/2004US20040011465 Plasma Processing apparatus
01/22/2004US20040011464 Promotion of independence between degree of dissociation of reactive gas and the amount of ionization of dilutant gas via diverse gas injection
01/22/2004US20040011291 Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes and nanotubes thus obtained
01/22/2004US20040011290 Apparatus and process for forming deposited film
01/22/2004US20040011289 Laser CVD device and laser CVD method
01/21/2004EP1383359A2 Method and arrangement for treating a substrate with an atmospheric pressure glow plasma (APG)
01/21/2004EP1383158A2 Charged-particle beam lens
01/21/2004EP1383157A2 Electron beam exposure apparatus and semiconductor device manufacturing method
01/21/2004EP1382711A1 Arc evaporator with a powerful magnetic guide for targets having a large surface area
01/21/2004EP1382411A2 Method of measuring the intensity profile of an electron beam, particularly of a beam of an electron beam processing device, and/or measuring of an optics for an electron beam and/or adjusting of an optics for an electron beam, measuring structure for such a method and electron beam processing device
01/21/2004EP1123558B1 Schottky emitter having extended life
01/21/2004EP0692138B1 Reactive dc sputtering system
01/21/2004CN1469200A Electronic photoetching equipment with pattern emitter
01/21/2004CN1135910C Method and apparatus for trigger-igniting CVD plasma
01/21/2004CN1135603C Charged particle beam photoetching device and photoetching process of charged particle beam
01/21/2004CN1135569C Method for measuring distribution of charged particle beam and its relative method
01/20/2004US6680481 Mark-detection methods and charged-particle-beam microlithography methods and apparatus comprising same
01/20/2004US6680474 Semiconductor calibration wafer with no charge effect
01/20/2004US6680455 Plasma resistant quartz glass jig
01/20/2004US6679981 Inductive plasma loop enhancing magnetron sputtering
01/20/2004US6679976 System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals
01/20/2004US6679675 Method and apparatus for processing wafers
01/20/2004US6678932 Fixture for assembling parts of a device such as a Wien filter
01/15/2004WO2004006320A1 Plasma processing apparatus
01/15/2004WO2004006319A1 Plasma processing equipment
01/15/2004WO2004006307A1 Electron beam exposure method and system therefor
01/15/2004WO2004006298A2 Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters
01/15/2004WO2004006285A1 Method and apparatus for non-invasive measurement and analysis of plasma parameters
01/15/2004WO2004006284A1 Method and apparatus for non-invasive measurement and analys of semiconductor plasma parameters
01/15/2004WO2004006283A1 Adjustable implantation angle workpiece support structure for an ion beam implanter
01/15/2004WO2004006280A2 Method and apparatus for reducing cross contamination of species during ion impl antation
01/15/2004WO2004006189A1 Imaging apparatus and method
01/15/2004WO2004005574A2 Rotary target and method for onsite mechanical assembly of rotary target
01/15/2004WO2003065766A3 Heating in a vacuum atmosphere in the presence of a plasma
01/15/2004WO2003062862A3 Phase transition thermometer for use in microcalorimeter for detecting x-rays
01/15/2004WO2003056601A3 Apparatus and method for treating a workpiece using plasma generated from microwave radiation
01/15/2004WO2003026364A8 Plasma processor coil
01/15/2004US20040009617 Plasma etching apparatus and plasma etching method
01/15/2004US20040008336 Method and system of determining chamber seasoning condition by optical emission
01/15/2004US20040008330 Electrostatically driven lithography
01/15/2004US20040007985 Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions
01/15/2004US20040007984 Multirate processing for metrology of plasma rf source
01/15/2004US20040007680 Electron beam lithography apparatus using a patterned emitter
01/15/2004US20040007679 Rotating beam ion implanter
01/15/2004US20040007678 Adjustable implantation angle workpiece support structure for an ion beam implanter
01/15/2004US20040007560 Method for predicting consumption of consumable part, method for predicting deposited-film thickness, and plasma processor
01/15/2004US20040007455 Arc-coating process with rotating cathodes
01/15/2004US20040007326 Wafer probe for measuring plasma and surface characteristics in plasma processing enviroments
01/15/2004US20040007247 Plasma film-forming apparatus and cleaning method for the same
01/15/2004US20040007182 Plasma processing apparatus
01/15/2004DE10043748B4 Zylinderförmiges Sputtertarget, Verfahren zu seiner Herstellung und Verwendung Cylindrical sputtering target, process for its preparation and use
01/14/2004EP1381257A2 Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions
01/14/2004EP1381074A2 Method and apparatus for observing a semiconductor device using an electron microscope
01/14/2004EP1381073A1 Aberration-corrected charged-particle optical apparatus