Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
03/2005
03/23/2005EP1516220A1 Modular manipulation system for manipulating a sample under study with a microscope
03/23/2005EP1515700A2 Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process
03/23/2005EP1352411B1 Adjustable conductance limiting aperture for ion implanters
03/23/2005EP1016117B1 Device and method for ion beam etching
03/23/2005EP0970503B1 Gaseous backscattered electron detector for an environmental scanning electron microscope
03/23/2005CN1599946A Merie plasma reactor with showerhead RF electrode tuned to the plasma with arcing suppression
03/23/2005CN1599020A Electronic injector and ion injecting device
03/23/2005CN1194387C High speed simulation method of ion implantation including dose effect
03/22/2005US6871111 Performance evaluation method for plasma processing apparatus
03/22/2005US6870310 Multibeam generating apparatus and electron beam drawing apparatus
03/22/2005US6870173 Electron-beam focusing apparatus and electron-beam projection lithography system employing the same
03/22/2005US6870172 Maskless reflection electron beam projection lithography
03/22/2005US6870171 Exposure apparatus
03/22/2005US6870170 Ion implant dose control
03/22/2005US6870169 Method and apparatus for analyzing composition of defects
03/22/2005US6870161 Apparatus for processing and observing a sample
03/22/2005US6870124 Plasma-assisted joining
03/22/2005US6870123 An accurate controller comprising a circular waveguide with a plurality of slots for radiating uniformity microwaves in radial direction; gas apparatus, gasification, vapor deposition, etching to form grooves on semiconductor discs
03/22/2005US6869676 Alternating first and second layers, the first layer including an individual hard-material layer such as carbides or silicides and the second layer including an individual carbon layer or an individual silicon layer,
03/22/2005US6869509 Comprises electric arc source for vaporizing or sputtering
03/22/2005US6868856 Local and remote gas dissociators coupled to a semiconductor processing chamber
03/22/2005US6868800 Branching RF antennas and plasma processing apparatus
03/17/2005WO2005025281A1 Adaptively plasma source for generating uniform plasma
03/17/2005WO2005024911A2 Unipolar electrostatic quadrupole lens and switching methods for charged beam transport
03/17/2005WO2005024892A2 Coating device and related method
03/17/2005WO2005024891A2 Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates
03/17/2005WO2005024890A1 Charged particle beam energy width reduction system for charged particle beam system
03/17/2005WO2005024889A1 Single stage charged particle beam energy width reduction system for charged particle beam system
03/17/2005WO2005024888A2 Double stage charged particle beam energy width reduction system for charged particle beam system
03/17/2005WO2005024881A2 Particle-optical systems, components and arrangements
03/17/2005WO2005024880A2 Floating mode ion source
03/17/2005WO2005024092A2 Particulate reduction using temperature-controlled chamber shield
03/17/2005WO2004114358A3 Thin magnetron structures for plasma generation in ion implantation systems
03/17/2005WO2004114354A3 A hybrid magnetic/electrostatic deflector for ion implantation systems
03/17/2005WO2004107825A9 Plasma source and plasma processing apparatus
03/17/2005WO2004095498A3 High-density plasma source using excited atoms
03/17/2005WO2004070741A3 Power measurement in a transformer coupled plasma source
03/17/2005WO2004055855B1 Gas distribution apparatus and method for uniform etching
03/17/2005WO2004053943A3 Emittance measuring device for ion beams
03/17/2005US20050058913 Stencil mask, charged particle irradiation apparatus and the method
03/17/2005US20050057165 Methods and apparatus for calibration and metrology for an integrated RF generator system
03/17/2005US20050057164 Coaxial type impedance matching device and impedance detecting method for plasma generation
03/17/2005US20050057137 Ion source, ion implanting device, and manufacturing method of semiconductor devices
03/17/2005US20050056794 Kinematic ion implanter electrode mounting
03/17/2005US20050056784 Structure determination of materials using electron microscopy
03/17/2005US20050056783 Object inspection and/or modification system and method
03/17/2005US20050056777 Method and apparatus for analyzing the composition of an object
03/17/2005US20050056622 Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
03/17/2005US20050056536 Multi-step magnetron sputtering process
03/17/2005US20050056535 Apparatus for low temperature semiconductor fabrication
03/17/2005US20050056534 Back-biased face target sputtering
03/17/2005US20050056370 Pedestal with integral shield
03/17/2005US20050056369 Plasma apparatus and method capable of adaptive impedance matching
03/17/2005DE19757696B4 Simulationsverfahren in einem lithographischen Prozeß Simulation method in a lithographic process
03/17/2005DE10336881A1 Hochfrequenzanregungsanordnung mit einer Begrenzungsschaltung High-frequency excitation system with a limiting circuit
03/17/2005DE10336422A1 Vorrichtung zur Kathodenzerstäubung Apparatus for sputtering
03/16/2005EP1515362A1 Plasma processing system, plasma processing method, plasma film deposition system, and plasma film deposition method
03/16/2005EP1515359A1 Chamber with low electron stimulated desorption
03/16/2005EP1515358A2 Small electron gun
03/16/2005EP1514627A2 Method for removal of surface oxides by electron attachment
03/16/2005EP1514126A1 Sensor and method for measuring a current of charged particles
03/16/2005EP1513963A1 Target and method of diffusion bonding target to backing plate
03/16/2005EP1088331B1 Cleaning process end point determination using throttle valve position
03/16/2005EP1017876B1 Gas injection system for plasma processing apparatus
03/16/2005CN1596458A Plasma processing apparatus
03/16/2005CN1596061A Substrates processing device and processing method thereof
03/16/2005CN1595618A Wafer edge etching apparatus and method
03/16/2005CN1595599A Target disc angle controlling and scanning motion mechanism of ion implantation apparatus
03/16/2005CN1193419C Device for testing defect in semiconductor device and method for using said device
03/16/2005CN1193406C Electronic emission photoetching device using selective-grow carbon nanometer tube and method thereof
03/16/2005CN1193401C High transmission, low energy beamline architecture for ion implanter
03/15/2005US6867859 Inductively coupled plasma spectrometer for process diagnostics and control
03/15/2005US6867422 Apparatus for ion implantation
03/15/2005US6867144 Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield
03/15/2005US6866900 Methods which increase ratio of processed wafers to plasma reaction chamber internal sidewall cleanings while maintaining low particle counts on wafers; sequentially processing, plasma-enhanced deposition of material on wafer
03/15/2005US6866753 Magnetic coils for guiding a plasma produced by a vacuum arc evaporating source to the vicinity of a substrate in a film forming chamber by use of a deflection magnetic field. The vacuum arc vapor deposition apparatus further includes a coil
03/15/2005US6866745 Semiconductor manufacturing apparatus
03/15/2005US6866744 Semiconductor processing apparatus and a diagnosis method therefor
03/10/2005WO2005022623A1 High aspect ratio etch using modulation of rf powers of various frequencies
03/10/2005WO2005022582A1 A method for measuring diffraction patterns from a transmission electron microscopy to determine crystal structures and a device therefor
03/10/2005WO2005022581A2 Particle optical apparatus
03/10/2005WO2005022577A2 Shaped sputter shields for improved ion column operation
03/10/2005WO2004091264A3 High frequency plasma jet source and method for irradiating a surface
03/10/2005WO2004008816A3 Method and device for substrate etching with very high power inductively coupled plasma
03/10/2005US20050054123 Method and apparatus for detecting end point
03/10/2005US20050054029 Method and apparatus for specimen fabrication
03/10/2005US20050053481 Method for differentially pumping endblock seal cavity
03/10/2005US20050052109 Electron beam emitter
03/10/2005US20050052103 Small electron gun
03/10/2005US20050051722 Inspection system, inspection method, and process management method
03/10/2005US20050051721 Sample dimension-measuring method and charged particle beam apparatus
03/10/2005US20050051517 The shutter includes an opening of a predetermined width, and is patterned to form an array of slits with smaller dimensions than the Debye screening length which allows improved interaction while avoiding the ion bombardment of the substrate
03/10/2005US20050051424 Sputtering using an unbalanced magnetron
03/10/2005US20050051423 Method for controlling plasma density or the distribution thereof
03/10/2005US20050051422 Cylindrical magnetron with self cleaning target
03/10/2005US20050051273 Plasma processing apparatus
03/10/2005US20050051272 Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
03/10/2005US20050051271 Plasma immersion ion implantation system including an inductively coupled plasma source having low dissociation and low minimum plasma voltage
03/10/2005US20050051270 Method for monitoring plasma processing apparatus
03/10/2005US20050051269 Vacuum enclosure; plasma discharging; supplying signals; cleaning using fluorine gas