Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
02/2007
02/08/2007US20070029188 Rectangular filtered vapor plasma source and method of controlling vapor plasma flow
02/08/2007US20070028841 Method and apparatus for depositing material on a substrate
02/08/2007US20070028839 Method and apparatus for an improved deposition shield in a plasma processing system
02/08/2007DE4412902B4 Verfahren zur plasmaunterstützten, chemischen Dampfabscheidung und Vakuumplasmakammer A method for plasma-enhanced, chemical vapor deposition and vacuum plasma chamber
02/08/2007DE112005000660T5 Methoden und Systeme zum Messen einer Eigenschaften eines Substrats oder zur Vorbereitung eines Substrats zur Analyse Methods and systems for measuring properties of a substrate or the preparation of a substrate for analysis
02/08/2007DE102006036296A1 Stencil mask for defining the irradiation region of charged particles on a substrate, comprises primary and secondary layers, and a number of holes
02/08/2007DE102005040297B3 Micro-channel plate used in a portable miniaturized electron microscope comprises micro-pores completely penetrated by a dielectric support layer which is held as a freely supported membrane in a semiconductor substrate
02/07/2007EP1750366A2 High reliability RF generator architecture
02/07/2007EP1750294A1 Plasma etching apparatus
02/07/2007EP1749901A2 Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
02/07/2007EP1749306A2 Vacuum plasma processor including control in response to dc bias voltage
02/07/2007EP1749115A2 Apparatus for directing plasma flow to coat internal passageways
02/07/2007EP1273027B1 Reaction chamber with at least one hf feedthrough
02/07/2007EP1230666B1 Plasma processing systems and method therefor
02/07/2007EP1009199B1 Method for controlling plasma processor
02/07/2007CN2867790Y Plasma generation device
02/07/2007CN2867585Y Ion implantation apparatus wafer transmission control system
02/07/2007CN2867584Y Magnetic quadripolar lens
02/07/2007CN2866522Y Vacuum lock differential air extraction system
02/07/2007CN1910726A Gas distribution plate assembly for plasma reactors
02/07/2007CN1910725A Projection electron microscope, electron microscope, specimen surface observing method, and micro device producing method
02/07/2007CN1909193A Plasma etching apparatus
02/07/2007CN1909186A Processing chamber, flat display device production device, plasma treatment method using same
02/07/2007CN1909147A Emitter for an ion source and method of producing same
02/07/2007CN1299226C System and method for monitoring and controlling gas plasma processing
02/06/2007US7173268 Method of measuring pattern dimension and method of controlling semiconductor device process
02/06/2007US7173263 Optical switching in lithography system
02/06/2007US7173262 Charged particle beam exposure apparatus, charged particle beam exposure method and device manufacturing method
02/06/2007US7173261 Image noise removing method in FIB/SEM complex apparatus
02/06/2007US7173259 Automatically aligning objective aperture for a scanning electron microscope
02/06/2007US7173253 Object-moving method, object-moving apparatus, production process and produced apparatus
02/06/2007US7172839 Preventing surface damage; coarse focused ion etching followed by gas assisted electron beam removal of thin film contaminated with gallium
02/06/2007US7172790 Depositing multiple uniform, homogeneous thin film layers; mixing core material with plasmochemical treatment gas and passing through reactor
02/06/2007US7172675 Observation window of plasma processing apparatus and plasma processing apparatus using the same
02/06/2007US7171919 Diamond film depositing apparatus using microwaves and plasma
02/01/2007WO2007013869A1 Dose cup located near bend in final energy filter of serial implanter for closed loop dose control
02/01/2007WO2007013802A1 Maskless lithography system with improved reliability
02/01/2007WO2007013398A1 Electron beam device
02/01/2007WO2006133291A3 Transmission ion miscroscope
02/01/2007WO2006133038A3 Particulate prevention in ion implantation
02/01/2007US20070026649 Plasma Doping Method and Plasma Doping Apparatus
02/01/2007US20070026161 Magnetic mirror plasma source and method using same
02/01/2007US20070025610 Method and apparatus for inspecting a substrate
02/01/2007US20070023701 Device and method for milling of material using ions
02/01/2007US20070023700 Manufacturing method of semiconductor device
02/01/2007US20070023699 Rotating irradiation apparatus
02/01/2007US20070023698 Ion implanting apparatus and method
02/01/2007US20070023697 Controlling the characteristics of implanter ion-beams
02/01/2007US20070023696 Nonuniform ion implantation apparatus and method using a wide beam
02/01/2007US20070023695 Systems and methods for implant dosage control
02/01/2007US20070023683 Vacuum processing apparatus and vacuum processing method
02/01/2007US20070023674 Ion beam measuring method and ion implanting apparatus
02/01/2007US20070023672 Apparatus and method for controlling the beam current of a charged particle beam
02/01/2007US20070023659 Method for measuring diffraction patterns from a transmission electron microscopy to determine crystal structures and a device therefor
02/01/2007US20070023657 Charged particle beam apparatus
02/01/2007US20070023654 Charged particle beam application system
02/01/2007US20070023652 Electron beam detection device and electron tube
02/01/2007US20070023393 polysilicon layer has at least one doped region, is provided, substrate is placed in a processing chamber, an etchant gas is provided into the processing chamber comprises N2, SF6, and at least one of CHF3 and CH2F2. The etching gas is transformed to a plasma to etch the polysilicone
02/01/2007US20070023282 Deflection magnetic field type vacuum arc vapor deposition device
02/01/2007DE19844882B4 Vorrichtung zur Plasma-Prozessierung mit In-Situ-Überwachung und In-Situ-Überwachungsverfahren für eine solche Vorrichtung An apparatus for plasma processing with in-situ monitoring and in-situ monitoring method for such a device
02/01/2007DE102004059607A1 Regulation of gas discharge phenomena and plasma, on deposition of thin layers by sputtering, uses a separate control of the current density and energy
01/2007
01/31/2007EP1748465A2 Plasma etching apparatus
01/31/2007EP1747572A2 Mass spectrometer
01/31/2007EP1747571A1 Method for the production of a disk-shaped workpiece based on a dielectric substrate, and vacuum processing system therefor
01/31/2007EP1221175B1 Electric supply unit and a method for reducing sparking during sputtering
01/31/2007CN1906753A System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
01/31/2007CN1906752A Stress free etch processing in combination with a dynamic liquid meniscus
01/31/2007CN1906751A System and method for stress free conductor removal
01/31/2007CN1906729A Compact, distributed inductive element for large scale inductively-coupled plasma sources
01/31/2007CN1906728A Ion beam apparatus
01/31/2007CN1906725A Ion source with modified gas delivery
01/31/2007CN1906324A Ion implantation method and ion implantation device
01/31/2007CN1906026A Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
01/31/2007CN1905135A Plasma etching apparatus
01/31/2007CN1298198C Inductively coupled plasma generator having lower aspect ratio
01/31/2007CN1298027C 等离子体处理装置 Plasma processing apparatus
01/31/2007CN1298024C Wafer self rotary device of strong stream oxygen ion injector
01/30/2007US7171038 Method and apparatus for inspecting a substrate
01/30/2007US7171035 Alignment mark for e-beam inspection of a semiconductor wafer
01/30/2007US7170771 Method of reading a data bit including detecting conductivity of a volume of alloy exposed to an electron beam
01/30/2007US7170070 Ion implanters having an arc chamber that affects ion current density
01/30/2007US7170056 Methodology and apparatus for leakage detection
01/30/2007US7170027 Microwave plasma processing method
01/30/2007US7169625 Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring
01/30/2007US7169271 Magnetron executing planetary motion adjacent a sputtering target
01/30/2007US7169256 Plasma processor with electrode responsive to multiple RF frequencies
01/30/2007US7169255 Plasma processing apparatus
01/30/2007US7169254 Plasma processing system and apparatus and a sample processing method
01/25/2007WO2007009804A1 Charged particle beam exposure system and beam manipulating arrangement
01/25/2007WO2007009634A1 Method and device for multi-cathode-pvd-coating and substrate having pvd-coating
01/25/2007WO2005108646A3 Rotary target locking ring assembly
01/25/2007US20070022401 Method of correcting mask pattern and correcting apparatus thereof
01/25/2007US20070020937 Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
01/25/2007US20070020776 Method and apparatus for wall film monitoring
01/25/2007US20070018112 Apparatus for generating a plurality of beamlets
01/25/2007US20070018101 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
01/25/2007US20070017636 Plasma source and plasma processing apparatus
01/25/2007CA2615235A1 Method and device for multi-cathode-pvd-coating and substrate having pvd-coating
01/24/2007EP1746630A1 Charged particle beam exposure system and beam manipulating arrangement
01/24/2007EP1746629A1 Field emitter arrangement and method of cleansing an emitting surface of a field emitter