Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
04/2008
04/16/2008CN100382249C Method and apparatus for process control in time division multiplexed TDM etch processes
04/16/2008CN100382239C Method for electrically discharging substrate, substrate processing apparatus and program
04/16/2008CN100382230C Silicon electrode and its production method, method for producing silicon parts and processing semiconductor wafer
04/16/2008CN100382226C Ion implantation method and apparatus
04/16/2008CN100381799C Method and apparatus for endpoint detection using partial least squares
04/15/2008US7359305 Electron beam recorder and electron beam irradiation position detecting method
04/15/2008US7358511 Plasma doping method and plasma doping apparatus
04/15/2008US7358510 Ion implanter with variable scan frequency
04/15/2008US7358509 Ion implanter, and angle measurement apparatus and beam divergence measurement apparatus for ion implanter
04/15/2008US7358495 Standard reference for metrology and calibration method of electron-beam metrology system using the same
04/15/2008US7358492 Apparatus, method, and computer program product for deconvolution analysis
04/15/2008US7358193 Apparatus for forming nanoholes and method for forming nanoholes
04/15/2008US7358192 Method and apparatus for in-situ film stack processing
04/15/2008US7356900 Manipulator needle portion repairing method
04/10/2008WO2008042585A2 Multi-purpose electrostatic lens for an ion implanter system
04/10/2008WO2008042128A1 Improved plasma electrode
04/10/2008WO2008042094A2 New and improved beam line architecture for ion implanter
04/10/2008WO2008010718A3 Method for sample preparation for cryoelectron microscopy (cem), microreactor and loading platform
04/10/2008WO2008008159A3 Electron induced chemical etching and deposition for circuit repair
04/10/2008WO2008005461A3 Sputter target assemblies having a controlled solder thickness
04/10/2008WO2008003526A3 Method and software for irradiating a target volume with a particle beam and device implementing same
04/10/2008WO2007136722A3 New and improved ion source
04/10/2008WO2007101133A3 Active damping of high speed scanning probe microscope components
04/10/2008WO2006099759A3 Vacuum plasma generator
04/10/2008WO2006099758A3 Method for operating a pulsed arc source
04/10/2008DE10352144B4 Vakuumbeschichtungsanlage zum Beschichten von längserstreckten Substraten Vacuum coating plant for coating elongate substrates
04/10/2008DE10260610B4 Vorrichtung und Verfahren zum Ausbilden von Mustern Apparatus and method for forming patterns
04/10/2008DE102006043900A1 Plasma arrangement i.e. plasma-lamination device, for laminating e.g. DVD, has control circuit actuating switching unit during occurrence of electric arc or breakdown over outlet and current flow remains over unit during and after actuation
04/10/2008DE102005061687B4 Verfahren und Vorrichtung zur Abstandsmessung sowie Verwendung des Verfahrens und der Vorrichtung zur Topographiebestimmung Method and apparatus for distance measurement and use of the method and apparatus for determining the topography
04/09/2008EP1909314A1 Processing method an apparatus for removing oxide film
04/09/2008EP1909095A1 X-ray photoelectron spectroscopy analysis system for surface analysis and method therefor
04/09/2008EP1909092A2 Sample supporting mesh and method of observing a rubber slice
04/09/2008EP1908091A1 Method and device for multi-cathode-pvd-coating and substrate having pvd-coating
04/09/2008EP1908090A1 Method for the production of magnetron-coated substrates and magnetron sputter source
04/09/2008EP1803144B1 An end-block for a rotatable target sputtering apparatus
04/09/2008EP1299897B1 Detector for variable pressure areas and an electron microscope comprising a corresponding detector
04/09/2008EP1035757B1 Substrate electrode plasma generator and substance/material processing method
04/09/2008CN101159217A Leak detection barrel of ion implanter
04/09/2008CN100380606C 等离子体处理系统 The plasma processing system
04/09/2008CN100380605C Plasma processing apparatus and method, and electrode plate for plasma processing apparatus
04/09/2008CN100380582C Mask and producing method, producing method for semiconductor device with this mask
04/09/2008CN100380564C Method and apparatus for an improved baffle plate in a plasma processing system
04/09/2008CN100379893C Matching box, vacuum device using the same and vacuum processing method
04/08/2008USRE40221 Object observation apparatus and object observation
04/08/2008US7355379 Coaxial type impedance matching device and impedance detecting method for plasma generation
04/08/2008US7355334 Electron beam generator device having carbon nanotube structure with a crosslinked network structure
04/08/2008US7355188 Technique for uniformity tuning in an ion implanter system
04/08/2008US7355186 Charged particle beam device with cleaning unit and method of operation thereof
04/08/2008US7355177 Electron beam device
04/08/2008US7355174 Charged particle beam emitting device and method for adjusting the optical axis
04/08/2008US7355171 Method and apparatus for process monitoring and control
04/08/2008US7354778 Method for determining the end point for a cleaning etching process
04/08/2008US7354525 Specimen surface processing apparatus and surface processing method
04/08/2008US7354501 Upper chamber for high density plasma CVD
04/08/2008US7354500 Mask and apparatus using it to prepare sample by ion milling
04/08/2008US7354482 Film deposition device
04/03/2008WO2008038684A1 Electron source
04/03/2008WO2008037959A1 A method of implanting a substrate and an ion implanter for performing the method
04/03/2008WO2008017304A3 Ecr plasma source
04/03/2008WO2008010959A9 Beam ablation lithography
04/03/2008WO2008002403A3 Scan pattern for an ion implanter
04/03/2008WO2007145355A3 Ion beam irradiating apparatus, and method of producing semiconductor device
04/03/2008WO2007143110A3 Dose close loop control for ion implantation
04/03/2008WO2007142912A3 Non-uniform ion implantation
04/03/2008WO2007111822A3 A method of ion beam control for glitch recovery
04/03/2008US20080079447 Semiconductor device test method and semiconductor device tester
04/03/2008US20080078959 Method for controlling charge amount of ion beam and a wafer applied in the method
04/03/2008US20080078958 Method for controlling charge amount of ion beam and a wafer applied in the method
04/03/2008US20080078957 Methods for beam current modulation by ion source parameter modulation
04/03/2008US20080078956 Broad beam ion implantation architecture
04/03/2008US20080078955 Methods for rapidly switching off an ion beam
04/03/2008US20080078954 Beam line architecture for ion implanter
04/03/2008US20080078953 Technique for improving ion implantation throughput and dose uniformity
04/03/2008US20080078952 Technique for improving ion implantation based on ion beam angle-related information
04/03/2008US20080078951 Multi-purpose electrostatic lens for an ion implanter system
04/03/2008US20080078950 Implanting with improved uniformity and angle control on tilted wafers
04/03/2008US20080078949 Technique for improved ion beam transport
04/03/2008US20080078947 Beam shot position correction coefficient computation/updating technique for ultrafine pattern fabrication using variable shaped beam lithography
04/03/2008US20080078933 Electron Beam Exposure or System Inspection Or Measurement Apparatus And Its Method And Height Detection Apparatus
04/03/2008US20080078249 Probe system, ultrasound system and method of generating ultrasound
04/03/2008DE19730993B4 Vakuumbeschichtungsvorrichtung zum allseitigen Beschichten von Substraten durch Rotation der Substrate im Partikelstrom Vacuum coater for coating substrates on all sides by rotating the substrates in the particle flow
04/03/2008DE10241433B4 Steuerschaltung zum Steuern einer Elektronenemissionsvorrichtung Control circuit for controlling an electron emission device
04/03/2008DE102006058098B3 Cathode for scanning electron microscope, has wire section split up at end that is divided into two parts attached to electrodes, and pointed radiating region formed at another end of wire section
04/03/2008DE102006027820B4 Kammeranordnung zur Verwendung bei der Elektronenstrahlbearbeitung Chamber assembly for use in the electron beam treatment
04/02/2008EP1906439A2 Etching method and semiconductor device fabrication method
04/02/2008EP1906433A1 Plasma discharge film-forming apparatus and method
04/02/2008EP1815493B1 Vacuum processing chamber for very large area substrates
04/02/2008CN101155460A Frequency monitoring to detect plasma process abnormality
04/02/2008CN101153855A Sample bench
04/02/2008CN100378924C Plasma etching reactor
04/02/2008CN100378923C Magnetron plasma processing apparatus
04/02/2008CN100378920C Ion mixing device and porous electrode for ion mixing device
04/02/2008CN100378915C Method for measuring parallel beam injection angle
04/02/2008CN100378245C Sputtering apparatus
04/01/2008USH2212 Method and apparatus for producing an ion-ion plasma continuous in time
04/01/2008US7353141 Method and system for monitoring component consumption
04/01/2008US7351986 Method and apparatus for reducing cross contamination of species during ion implantation
04/01/2008US7351984 Controlling the characteristics of implanter ion-beams
04/01/2008US7351983 Focused ion beam system
04/01/2008US7351971 Charged-particle beam instrument and method of detection