Patents
Patents for H01J 37 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof (46,866)
01/2009
01/15/2009WO2009007448A2 Magnetron co-sputtering device
01/15/2009WO2008132734A3 Focused ion beam deep nano- patterning method
01/15/2009WO2008123391A3 Apparatus and method for plasma doping
01/15/2009WO2008032856A3 Plasma generator and work processing apparatus provided with the same
01/15/2009US20090014725 Ion doping apparatus, ion doping method, semiconductor device and method of fabricating semiconductor device
01/15/2009US20090014651 Charged particle beam equipments, and charged particle beam microscope
01/14/2009EP2015343A2 High temperature cathode for plasma etching
01/14/2009EP2015342A2 Charged particle beam equipments, and charged particle beam microscope
01/14/2009EP2013894A1 High power impulse magnetron sputtering vapour deposition
01/14/2009EP2013893A2 Methods and systems for trapping ion beam particles and focusing an ion beam
01/14/2009EP1210724B1 Method of determining etch endpoint using principal components analysis of optical emission spectra
01/14/2009CN201181693Y Upper electrode of semiconductor etching equipment
01/14/2009CN201181274Y Wireless controlling mechanism for micro-nano sample under electronic microscope
01/14/2009CN201181273Y Controlling mechanism for micro-nano sample under electronic microscope
01/14/2009CN101346796A Method and installation for the vacuum colouring of a metal strip by means of magnetron sputtering
01/14/2009CN101346795A Method and installation for the vacuum colouring of a metal strip by means of magnetron sputtering
01/14/2009CN101346032A Barometric pressure microwave plasma generation device
01/14/2009CN101346030A Controllable multi-component cathode arc plasma forming apparatus and method
01/14/2009CN101345184A Plasma processing apparatus, gas dispensing device and gas delivery method
01/14/2009CN100452945C Decoupling reactive ion etching chamber containing multiple processing platforms
01/14/2009CN100452944C Plasma processing device
01/13/2009US7476880 Writing a circuit design pattern with shaped particle beam flashes
01/13/2009US7476879 Placement effects correction in raster pattern generator
01/13/2009US7476878 Techniques for reducing effects of photoresist outgassing
01/13/2009US7476877 Wafer charge monitoring
01/13/2009US7476875 Contact opening metrology
01/13/2009US7476872 Method and apparatus for observing inside structures, and specimen holder
01/13/2009US7476869 Gas distributor for ion source
01/13/2009US7476868 Apparatus and method for generating ions of an ion implanter
01/13/2009US7476858 Particle detection auditing system and method
01/13/2009US7476857 Tool-to-tool matching control method and its system for scanning electron microscope
01/13/2009US7476856 Sample dimension-measuring method and charged particle beam apparatus
01/13/2009US7476855 Beam tuning with automatic magnet pole rotation for ion implanters
01/13/2009US7476301 Procedure and device for the production of a plasma
01/08/2009WO2009003552A2 Treatment system for flat substrates
01/08/2009WO2008136029A8 Apparatus for the cold plasma treatment of a continuous web material
01/08/2009WO2008130507A3 Plasma source with segmented magnetron cathode
01/08/2009WO2008014332A3 Methods and apparatuses for directing an ion beam source
01/08/2009US20090008578 Method and apparatus for specimen fabrication
01/08/2009US20090008577 Conformal Doping Using High Neutral Density Plasma Implant
01/08/2009US20090008551 Electron beam apparatus with aberration corrector
01/08/2009US20090008363 Plasma processing apparatus and a plasma processing method
01/08/2009US20090008245 Method for Connecting Magnetic Substance Target to Backing Plate, and Magnetic Substance Target
01/08/2009US20090008033 Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
01/08/2009DE10232179B4 PVD-Verfahren PVD-method
01/08/2009DE102008030052A1 Schreibverfahren mit einem geladenen Teilchenstrahl The writing method using a charged particle beam
01/08/2009DE102004019060B4 Vorrichtung zum Einbringen einer Lichtbogenquelle in eine Beschichtungsanlage für große Substrate oder Bänder Device for inserting an arc source in a coating system for large substrates or tapes
01/08/2009CA2688522A1 Treatment system for flat substrates
01/07/2009EP2012342A2 Hybrid etch chamber with decoupled plasma controls
01/07/2009EP2012341A1 Modular gas ion source
01/07/2009EP2010312A1 Method and apparatus for nanopowder and micropowder production using axial injection plasma spray
01/07/2009EP1856303B1 Single, right-angled end-block
01/07/2009EP1497635A4 Specimen holding apparatus
01/07/2009EP1230667B1 Method and apparatus for controlling the volume of a plasma
01/07/2009EP1214459B1 Pulsed plasma processing method and apparatus
01/07/2009EP1147241B1 Diffusion bonded sputter target assembly and method of making same
01/07/2009CN201177870Y DC combination electric field and ion stream density measuring system
01/07/2009CN101341570A Technique for providing an inductively coupled radio frequency plasma flood gun
01/07/2009CN101340968A Microwave plasma abatement apparatus
01/07/2009CN101339895A Gas distribution device and plasma processing apparatus applying the same
01/07/2009CN100449708C Substrate processing apparatus
01/06/2009US7474604 Electron beam recorder, electron beam irradiation position detecting method and electron beam irradiation position controlling method
01/06/2009US7473913 Gantry system for a particle therapy facility
01/06/2009US7473910 Electron beam lithography apparatus
01/06/2009US7473909 Use of ion induced luminescence (IIL) as feedback control for ion implantation
01/06/2009US7473638 Plasma-enhanced cyclic layer deposition process for barrier layers
01/06/2009US7473332 Method for processing semiconductor
01/02/2009DE112006003519T5 Verfahren und Vorrichtung für Downstream Gasdissoziation Method and apparatus for downstream gas dissociation
12/2008
12/31/2008WO2009002736A2 High voltage insulator for preventing instability in an ion implanter due to triple-junction breakdown
12/31/2008WO2009002692A2 Cathode having electron production and focusing grooves, ion source and related method
12/31/2008WO2009000933A1 Method and device for the treatment of a semiconductor substrate
12/31/2008WO2009000932A1 Method and device for the treatment of a semiconductor substrate
12/31/2008WO2009000930A1 Arrangement and method for processing a substrate
12/31/2008WO2008118738A3 Apparatus and methods of forming a gas cluster ion beam using a low-pressure source
12/31/2008EP2009670A1 Sputtering Device, Magnetron Electrode and Electrode Arrangement
12/31/2008EP2008294A1 Electron-optical corrector for aplanatic imaging systems
12/31/2008EP2007923A1 Etching process
12/31/2008EP1941531B1 Electron-optical corrector for an aplanatic imaging system
12/31/2008EP0871795B1 A scalable helicon wave plasma processing device with a non-cylindrical source chamber
12/31/2008CN101335193A Hybrid etch chamber with decoupled plasma controls
12/31/2008CN101335192A Substrate processing apparatus and shower head
12/31/2008CN101335176A Local ion infusion device and method
12/31/2008CN101333666A Plasma generating method, cleaning method, substrate processing method
12/31/2008CN100447952C Ion doping device, ion doping method and semiconductor device
12/31/2008CN100447935C Apparatus and methods for minimizing arcing in a plasma processing chamber
12/31/2008CN100447934C Vacuum cathode arc straight tube filter
12/31/2008CN100447297C Microwave plasma processing method
12/31/2008CN100447289C Plasma-assisted nitrogen surface treatment
12/30/2008US7471035 Internal conductively-heated cathode
12/30/2008US7470918 Method and apparatus for processing a micro sample
12/30/2008US7470915 Detector system of secondary and backscattered electrons for a scanning electron microscope
12/30/2008US7470901 Charged particle spectrometer and detector therefor
12/30/2008US7470627 Wafer area pressure control for plasma confinement
12/30/2008US7470626 Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
12/30/2008US7470329 Method and system for nanoscale plasma processing of objects
12/30/2008US7469715 Chamber isolation valve RF grounding
12/30/2008US7469654 Plasma processing device
12/30/2008CA2268659C Rectangular cathodic arc source and method of steering an arc spot
12/25/2008US20080318432 Reactor with heated and textured electrodes and surfaces
12/25/2008US20080315464 Method of manufacturing a composite filter media