Patents
Patents for G03F 7 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (127,176)
08/2002
08/28/2002CN1366211A Printing ink composition used for welding protective layer
08/28/2002CN1366206A Liquid crystal display equipment array substrate and its making method
08/28/2002CN1089951C Solid photographic device and manufacture of same
08/28/2002CN1089907C 光敏树脂组合物 The photosensitive resin composition
08/27/2002US6442182 Device for on-line control of output power of vacuum-UV laser
08/27/2002US6442181 Extreme repetition rate gas discharge laser
08/27/2002US6441975 Device for the low-deformation support of an optical element and method for the low-deformation support of the optical element
08/27/2002US6441963 Multi-layered mirror
08/27/2002US6441886 Illumination optical system and exposure apparatus having the same
08/27/2002US6441885 Low thermal distortion extreme-UV lithography reticle
08/27/2002US6441884 Projection exposure apparatus
08/27/2002US6441883 Method and apparatus to reduce bias between dense and sparse photoresist patterns
08/27/2002US6441514 Magnetically positioned X-Y stage having six degrees of freedom
08/27/2002US6441383 Charged particle beam lithography apparatus for forming pattern on semi-conductor
08/27/2002US6441359 Near field optical scanning system employing microfabricated solid immersion lens
08/27/2002US6441351 Heating device, method for evaluating heating device and pattern forming method
08/27/2002US6441244 Benzophenones and the use thereof as photoinitiators
08/27/2002US6441115 Photosensitive polymer
08/27/2002US6440874 High throughput plasma resist strip process for temperature sensitive applications
08/27/2002US6440871 Layer of ozonated water on the photoresist; directing at least one gas other than ozone toward the semiconductor device so as to move said layer of ozonated water across the photoresist; nitrogen, air, and gaseous hydrochloric acid
08/27/2002US6440759 Method of measuring combined critical dimension and overlay in single step
08/27/2002US6440667 Analysis of target molecules using an encoding system
08/27/2002US6440647 Resist stripping process
08/27/2002US6440646 Positive resist composition suitable for lift-off technique and pattern forming method
08/27/2002US6440642 Dielectric composition
08/27/2002US6440639 High-aspect ratio resist development using safe-solvent mixtures of alcohol and water
08/27/2002US6440638 Method and apparatus for resist planarization
08/27/2002US6440637 Electron beam lithography method forming nanocrystal shadowmasks and nanometer etch masks
08/27/2002US6440636 Polymeric compound and resin composition for photoresist
08/27/2002US6440635 Having both negative and positive characteristics with wider exposure dosage windows; glycoluril powderlink? crosslinker
08/27/2002US6440634 Microfabrication of integrated circuits, deep uv lithography; phenylsulfonate salts of sulfonium or iodinium cations
08/27/2002US6440633 Which can be directly inscribed based on digital signals of a computer or the like by using an infrared laser; polycarbons with pendant onium groups
08/27/2002US6440632 Forming pattern; exposure to light
08/27/2002US6440622 Energized light sources deliver signals that are compared, then error signal is delivered in response to detecting significant difference between signals; for notification of the need for maintanence/servicing
08/27/2002US6440621 Method of detecting film defects using chemical exposure of photoresist films
08/27/2002US6440620 Electron beam lithography focusing through spherical aberration introduction
08/27/2002US6440616 Suited for use in setting a focus condition of a projection aligner on the occasion of manufacturing a semiconductor device or a liquid crystal display device, etc.
08/27/2002US6440612 Field correction of overlay error
08/27/2002US6440519 Fast cure speed and superior adhesion under high temperature-high humidity conditions and metal corrosion properties
08/27/2002US6440340 Colored articles and compositions and methods for their fabrication
08/27/2002US6440326 Photoresist removing composition
08/27/2002US6440262 Resist mask having measurement marks for measuring the accuracy of overlay of a photomask disposed on semiconductor wafer
08/27/2002US6440253 Method to facilitate processing of three dimensional substrates
08/27/2002US6440218 Coating solution applying method and apparatus
08/22/2002WO2002065822A1 Method for producing wirings with rough conducting structures and at least one area with fine conducting structures
08/22/2002WO2002065545A2 Overlay alignment metrology using diffraction gratings
08/22/2002WO2002065538A2 Post chemical-mechanical planarization (cmp) cleaning composition
08/22/2002WO2002065519A1 Holding device, holding method, exposure device, and device manufacturing method
08/22/2002WO2002065513A2 Photoresist strip with 02 and nh3 for organosilicate glass applications
08/22/2002WO2002065482A2 Collector with an unused area for lighting systems having a wavelength of ≤ 193 nm
08/22/2002WO2002065217A1 Method for the production of a printing plate using the dual-feed technology
08/22/2002WO2002065215A2 Process for roll-to-roll manufacture of a display by synchronized photolithographic exposure on a substrate web
08/22/2002WO2002065214A1 Dose control in response to stepper optical paramaters
08/22/2002WO2002065213A1 Refractive index regulation for maintaining optical imaging performance
08/22/2002WO2002065212A1 Resist composition
08/22/2002WO2002065183A1 Lens-barrel, exposure device, and method of manufacturing device
08/22/2002WO2002037538A3 Amorphous carbon layer for improved adhesion of photoresist
08/22/2002WO2002035287A3 Edge bead remover for thick film photoresists
08/22/2002WO2002025375A3 Pinhole defect repair by resist flow
08/22/2002WO2002021212A3 Fluorinated phenolic polymers and photoresist compositions comprising same
08/22/2002WO2002017019A3 Oxime sulfonate and n-oxyimidosulfonate photoacid generators and photoresists comprising same
08/22/2002WO2002012350A3 Photoinitiated reactions
08/22/2002WO2002006901A3 Photoresist composition for deep uv and process thereof
08/22/2002US20020116697 Methods for calculating, correcting, and displaying segmented reticle patterns for use in charged-particle-beam microlithography, and screen editors utilizing such methods
08/22/2002US20020115874 Acid-decomposable ester compound suitable for use in resist material
08/22/2002US20020115821 Polymer, resist composition and patterning process
08/22/2002US20020115807 Polymer, resist composition and patterning process
08/22/2002US20020115741 Alkali-soluble resin,such as a phenolic resin, that has been modified with aniline or an aniline derivative
08/22/2002US20020115739 Bisphenol type epoxyacrylate resin; (meth)acrylic acid copolymer modified by reaction with glycidyl (meth)acrylate; thermosetting resin; reactive diluent; photoinitiator
08/22/2002US20020115309 Heat-resistant core and a core covering comprising a carbon based yarn. The knitted garment is heat treated to at least partially decompose the carbon based yarn to form activated charcoal
08/22/2002US20020115025 Apparatus for removing photoresist film
08/22/2002US20020115024 Apparatus for removing photoresist film
08/22/2002US20020115023 Method for forming micropatterns
08/22/2002US20020115022 Developer/rinse formulation to prevent image collapse in resist
08/22/2002US20020115021 A lithographic system for an integrated circuit includes a computer and a configurable mask which is coupled to the computer and allows light to be transmitted in the pattern controlled by a control signal from the computer
08/22/2002US20020115020 Exposing photoresists using an electron beam exposure apparatus having a variable beam-shaping system
08/22/2002US20020115019 Photosensitive flexographic printing element having at least two IR-ablative layers
08/22/2002US20020115018 A positive resist formulation consists of nitrile containing tert-amine compound, an organic solvent and a base resin having an acidic functional group which is protected with an acid labile group, a photoacid generator
08/22/2002US20020115017 Negative resist containing a polysilsesquioxane polymer with pendant fused rings and sites for reaction with a crosslinking agent, an acid-sensitive glycolurils ascrosslinking agent, and a radiation sensitive generator
08/22/2002US20020115016 Method of fabricating a high aspect ratio microstructure
08/22/2002US20020115014 Imageable photoresist laminate
08/22/2002US20020115004 A phase shift reticle and a trim reticle, reticle stage scans the two reticles across an illumination field, image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage
08/22/2002US20020115003 Seed layer is formed of a chromium material containing atleast one of oxygen, nitrogen and carbon, disposed between the transparent substrate and the light-shielding film or the antireflective film
08/22/2002US20020115002 Template for room temperature, low pressure micro-and nano-imprint lithography
08/22/2002US20020114969 Covercoats to protect the circuitry
08/22/2002US20020114966 Handling efficiency under day light fluorescent lamps, sensitivity
08/22/2002US20020114567 System and method for high resolution optical imaging, data storage, lithography, and inspection
08/22/2002US20020114370 Injection seeded F2 laser with line selection and discrimination
08/22/2002US20020114089 Reduction objective for extreme ultraviolet lithography
08/22/2002US20020113967 Inspection method, apparatus and system for circuit pattern
08/22/2002US20020113959 Method and apparatus for inspecting resist pattern
08/22/2002US20020113954 Focusing-device for the radiation from a light source
08/22/2002US20020113953 Method of adjusting projection optical apparatus
08/22/2002US20020113790 Imaging simulation method and imaging simulation system using the same and recording medium programmed with the simulation method
08/22/2002US20020113218 Method and apparatus for positioning substrate and the like
08/22/2002US20020113035 Method for forming hole pattern
08/22/2002US20020112824 Pellicle mounting apparatus
08/22/2002US20020112784 Maintains flatness of photomask improving overlay accuracy; blowing gas flow; semiconductors; photolithography
08/22/2002US20020112739 Minimal distance between ultraviolet radiator and substrate while irradiating in translational or rotational movement achieves intense and uniform illumination
08/22/2002US20020112662 System for separating and recovering waste fluid and spin coater