| Patents for G03F 7 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (127,176) |
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| 09/06/2002 | WO2002069037A2 Attenuated embedded phase shift photomask blanks |
| 09/06/2002 | WO2002068527A2 NOVEL β-OXO COMPOUNDS AND THEIR USE IN PHOTORESIST |
| 09/06/2002 | WO2002068525A1 Positive photodefinable composition of polycarboxylic acid, phenolic and thermocurable resins |
| 09/06/2002 | WO2002068350A1 Oxygen doping of silicon oxyfluoride glass |
| 09/06/2002 | WO2002031011A3 Fractionation of resins using a static mixer and a liquid-liquid centrifuge |
| 09/06/2002 | WO2002013226A3 Spatial light modulator driven photocathode source electron beam pattern generator |
| 09/06/2002 | WO2001011733A9 High pulse rate pulse power system with fast rise time and low leakage current |
| 09/06/2002 | CA2438730A1 Semiconductor developing agent |
| 09/05/2002 | US20020124235 Method of forming mask for charged particle beam exposure and processing program of pattern data for forming mask for charged particle beam exposure |
| 09/05/2002 | US20020123586 Semiconductors; improved etch selectivity; preventing undercutting; lithography |
| 09/05/2002 | US20020123245 Used to prevent the exposure light for exposing the resist from reflecting at a film lying under the resist |
| 09/05/2002 | US20020123241 Process for forming pattern and method for producing liquid crystal display apparatus employing process for forming pattern |
| 09/05/2002 | US20020123227 Intermediate transfer layers for nanoscale pattern transfer and nanostructure formation |
| 09/05/2002 | US20020123168 Apparatus and methods for blocking highly scattered charged particles in a patterned beam in a charged-particle-beam microlithography system |
| 09/05/2002 | US20020123012 For simultaneously imaging at least two reticles onto a substrate; lithographic system |
| 09/05/2002 | US20020123011 Heating apparatus for a substrate to be processed with a coating film |
| 09/05/2002 | US20020123010 Providing on substrate a layer of a negative photoresist comprising a polymer having methacrylate recurring groups; imagewise exposing layer to irradiation; developing photoresist by removing portions of layer not exposed |
| 09/05/2002 | US20020123009 Coating a carrier with a photosensitive material, exposure of the material to radiation, and physical transfer of the exposed material to a substrate |
| 09/05/2002 | US20020123005 For adding to solid resin |
| 09/05/2002 | US20020123003 Laser engravable flexographic printing element and a method for forming a printing plate from the element |
| 09/05/2002 | US20020123001 For producing offset printing plates; dimensionally stable |
| 09/05/2002 | US20020122995 Lithographic template and method of formation and use |
| 09/05/2002 | US20020122994 Identifying features in layout to be defined using phase shifting, placing shifter shapes to edges of of features; assigning phase to shifter shapes according to phase dependencies and costs to create a of phase shifters; refining |
| 09/05/2002 | US20020122918 Multiple wavelength photolithography for preparing multilayer microstructures |
| 09/05/2002 | US20020122873 Providing tip comprising internal cavity having external opening; loading cavity with a deposition compound; subjecting tip to driving force to deliver compound through external opening to be deposited on substrate |
| 09/05/2002 | US20020122670 Developing method and developing apparatus |
| 09/05/2002 | US20020122453 Annealed copper alloy electrodes for fluorine containing gas discharge lasers |
| 09/05/2002 | US20020122449 Gas laser apparatus for lithography |
| 09/05/2002 | US20020122255 Method of manufacturing diffractive optical element |
| 09/05/2002 | US20020122237 Method and apparatus for spatial light modulation |
| 09/05/2002 | US20020122187 Structure for lithographic focus control features |
| 09/05/2002 | US20020122164 Lithographic objective having a first lens group including only lenses having a positive refractive power |
| 09/05/2002 | US20020122163 Position Detecting method optical characteristic measuring method and unit, exposure apparatus, and device manufacturing method |
| 09/05/2002 | US20020122162 Wavefront aberration measurement method and projection exposure apparatus |
| 09/05/2002 | US20020121615 Methods and devices for detecting and canceling magnetic fields external to a charged-particle-beam (CPB) optical system, and CPB microlithography apparatus and methods comprising same |
| 09/05/2002 | US20020121504 Electron beam irradiation system and electron beam irradiation method |
| 09/05/2002 | US20020121341 Corrugated liner sections, preferably made of a thermoplastic material such as polyethylene, detachably assembled within ditch |
| 09/05/2002 | US20020121287 Method for removing organic material from a substrate and for oxidizing oxidizable material thereon |
| 09/05/2002 | US20020121206 Lithographic printing method and lithographic printing apparatus thereof |
| 09/05/2002 | DE10145075A1 To rinse out the closed interior of a projection lens, for semiconductor lithography, the interior is flushed with a mixture of inert gases with a refractive index matching the refractive index of air |
| 09/05/2002 | DE10113612A1 Sub-objective for illumination system has two lens groups, second lens group with at least first lens with negative refractive index and at least second lens with positive refractive index |
| 09/05/2002 | DE10106399C1 Verfahren zur Herstellung von Schaltungsträgern mit groben Leiterstrukturen und mindestens einem Bereich mit feinen Leiterstrukturen A process for producing circuit carriers with conductor structures and at least one rough area with fine conductor structures |
| 09/04/2002 | EP1237046A2 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs |
| 09/04/2002 | EP1237045A2 Lithographic mask handling |
| 09/04/2002 | EP1237044A2 Lithographic tool with dual isolation system and method for configuring the same |
| 09/04/2002 | EP1237043A2 Projection optical system, projection exposure apparatus, and projection exposure method |
| 09/04/2002 | EP1237042A2 Bottom anti-reflective coat forming composition for lithography |
| 09/04/2002 | EP1237034A2 Optical system with electronic spot size control and focus control optics |
| 09/04/2002 | EP1236745A2 Silicon-containing polymer, resist composition and patterning process |
| 09/04/2002 | EP1236569A2 Positive type image-forming material and planographic printing plate precursor |
| 09/04/2002 | EP1235863A1 Additive composition for increasing the storage stability of ethylenically unsaturated resins |
| 09/04/2002 | EP1075672B1 Protection of lithographic components from particle contamination |
| 09/04/2002 | EP0960074A4 Method for determining laser-induced compaction in fused silica |
| 09/04/2002 | EP0843841B1 Stripping composition |
| 09/04/2002 | EP0784232B1 Photosensitive composition and photosensitive rubber plate |
| 09/04/2002 | EP0782719B1 Protective mask for pellicle |
| 09/04/2002 | CN1367884A Antireflective coating for photoresist compositions |
| 09/04/2002 | CN1367878A Fluoride lens crystal for optical microlithography systems |
| 09/04/2002 | CN1367407A Substrate treatment device and method |
| 09/04/2002 | CN1367086A Support device for lithographic printing plate, its making method and lithographic printing original plate |
| 09/04/2002 | CN1090342C Chemically-reinforced photoetching glue |
| 09/04/2002 | CN1090341C Colour scanner |
| 09/04/2002 | CN1090340C Rewinder |
| 09/04/2002 | CN1090200C Circuit substrate, circuit-formed suspension substrate, and prodn. method thereof |
| 09/04/2002 | CN1090199C Process for producing polyamide based on dicarboxylic acid and diamine |
| 09/04/2002 | CN1090103C Stamp materials and method how to make stamp materials |
| 09/04/2002 | CN1090102C Direct electrostatic printing method and apparatus |
| 09/03/2002 | US6446252 Photomask method for making the same capacitor cell area near outmost cell arrays |
| 09/03/2002 | US6445667 Optical servo writing |
| 09/03/2002 | US6445516 Lens system, in particular projection lens system in semiconductor lithography |
| 09/03/2002 | US6445515 Optical element housing or mounting connector |
| 09/03/2002 | US6445510 Optical imaging device, in particular lens system, with at least one system diaphragm |
| 09/03/2002 | US6445453 Scanning interferometric near-field confocal microscopy |
| 09/03/2002 | US6445443 Lithography system including mechanism for setting optimal process parameters and method of operating the same |
| 09/03/2002 | US6445442 Projection-microlithographic device |
| 09/03/2002 | US6445441 Exposure apparatus, semiconductor manufacturing apparatus, and semiconductor manufacturing method |
| 09/03/2002 | US6445440 Motion feed-through into a vacuum chamber and its application in lithographic projection apparatuses |
| 09/03/2002 | US6445439 EUV reticle thermal management |
| 09/03/2002 | US6445432 Color liquid crystal display panel |
| 09/03/2002 | US6445354 Aperture coupled slot array antenna |
| 09/03/2002 | US6445093 Planar motor with linear coil arrays |
| 09/03/2002 | US6444995 Focussing method and system of exposure apparatus |
| 09/03/2002 | US6444807 Substituted phthalocyanine |
| 09/03/2002 | US6444588 Providing inorganic silicon oxynitride antireflective coating material layer on substrate assembly surface, using layer in photolithographic process, thermally treating layer to reduce etch rate |
| 09/03/2002 | US6444483 A full area of a semiconductor integrated circuit is divided into unit areas, a mask data file for use in a beam exposure system or an inspection apparatus is produced based on cad data of the full area, full-area header information in which a |
| 09/03/2002 | US6444410 Hard bake is performed at a temperature lower than a glass transition temperature of the photoresist layer. the photoresist layer is thus able to reflow, so that the profile can be modified. or alternatively, the hard bake step can be |
| 09/03/2002 | US6444409 Scrubbing unit |
| 09/03/2002 | US6444408 Polymerizable monomers having silicon containing groups that are transparent; and ethylenically unsaturated group are provided. and images |
| 09/03/2002 | US6444406 Method for forming photoresist pattern and manufacturing method of magnetoresistive effect thin-film magnetic head |
| 09/03/2002 | US6444402 Method of fabricating a semiconductor device including steps of patterning a resist to form a first mask pattern, transferring said first mask pattern to an underlying layer of material, block-out masking a portion of said first mask |
| 09/03/2002 | US6444399 Methods for achieving reduced effects of overlayer and subfield-stitching errors in charged-particle-beam microlithography, and device manufacturing methods comprising such microlithography methods |
| 09/03/2002 | US6444398 Method for manufacturing a semiconductor wafer using a mask that has several regions with different scattering ability |
| 09/03/2002 | US6444397 Amplification; photolithography patterning |
| 09/03/2002 | US6444396 Ester compounds, polymers, resist composition and patterning process |
| 09/03/2002 | US6444395 Pattern formation material and method |
| 09/03/2002 | US6444394 Chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the |
| 09/03/2002 | US6444391 Contain a water-soluble azide compound which serves as a photocrosslinking agent and poly(n-vinylacetamide) that is photocrosslinkable in the presence of the water-soluble azide compound |
| 09/03/2002 | US6444378 Waterborne photoresists for use in manufacture of printed circuit boards |
| 09/03/2002 | US6444375 Increasing integration of semiconductor devices via narrowing the width of the pattern formed in the mask pattern and the distance between; photolithography; semiconductors; integrated circuits |
| 09/03/2002 | US6444374 Dividing the mask into partial areas, forming partial masks which have apertures with patterns identical with plurality of partial areas, exposing the patterns of masks on a mask substrate by electron beam proximity exposure method |