Patents
Patents for G03F 7 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (127,176)
12/2002
12/26/2002US20020197545 X-ray transmission film is held by the holding frame with an even step-like structure defined at its peripheral portion.
12/26/2002US20020197543 Identifying cutting areas for phase shift regions based upon characteristics of said pattern; assigning phase values to phase shift windows in the phase shift regions by cutting the phase shift regions in selected ones of the cutting areas
12/26/2002US20020197542 Phase error monitor pattern and application
12/26/2002US20020197539 Photolithography method for fabricating thin film
12/26/2002US20020197496 Polyester film as support for dry film resist
12/26/2002US20020197400 Spin-coater with self-cleaning cup and method of using
12/26/2002US20020197079 Non-water-based resist stripping liquid management apparatus and non-water-based resist stripping liquid management method
12/26/2002US20020196968 Review work supporting system
12/26/2002US20020196896 Exposure method, exposure apparatus, X-ray mask, semiconductor device and microstructure
12/26/2002US20020196831 Gas discharge laser with means for removing gas impurities
12/26/2002US20020196830 Laser chamber insulator with sealed electrode feedthrough
12/26/2002US20020196629 Illumination apparatus, illumination-controlling method, exposure apparatus, device fabricating method
12/26/2002US20020196550 Catadioptric objective
12/26/2002US20020196533 Catadioptric optical system and exposure apparatus having the same
12/26/2002US20020196473 Method of automated setting of imaging and processing parameters
12/26/2002US20020196448 Interferometer system and lithographic step-and-scan apparatus provided with such a system
12/26/2002US20020196421 Stage device, exposure apparatus and method
12/26/2002US20020196420 Near-field exposure system selectively applying linearly polarized exposure light to exposure mask
12/26/2002US20020196419 Illumination apparatus, exposure apparatus, and device fabricating method using the same
12/26/2002US20020196418 Scanning exposure in which an object and pulsed light are moved relatively, exposing a substrate by projecting a pattern on a mask onto the substrate with pulsed light from a light source, light sources therefor, and methods of manufacturing
12/26/2002US20020196417 Projection exposure method and apparatus
12/26/2002US20020196416 Projection exposure method and apparatus
12/26/2002US20020195539 Focus monitoring method, focus monitoring apparatus, and method of manufacturing semiconductor device
12/26/2002US20020195419 Antireflective hard mask compositions
12/26/2002US20020195200 Gas assisted method for applying resist stripper and gas-resist stripper combinations
12/26/2002US20020195013 Printing method of planographic printing plate and planographic printing plate processed by this method
12/25/2002CN1387676A Improved apparatus and method for integrated circuit planarization
12/25/2002CN1387675A Method for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidifcation
12/25/2002CN1387673A Method and apparatus for supercritical processing of multiple workpieces
12/25/2002CN1387636A UV-absorbing support layers and flexographic printing elements comprising same
12/25/2002CN1387232A Photoetch process with multiple dosages and regional exposure
12/25/2002CN1387090A Method for removing anticorrosive additive material
12/25/2002CN1387089A Method for decreasing optical near effect error in photoetch process
12/25/2002CN1386818A Composition contg. azacyclic compound and glycol for grain decoration of resin material, removal of stain and removal of resin material
12/25/2002CN1386635A Imaging device for generating multiple image points in one projection line
12/25/2002CN1097210C Light sensitive composition contg. arylhydrazo dye
12/25/2002CN1097091C Cleaning agent article for cleaning photoresist during mfg. semiconductor
12/25/2002CN1097073C 聚合物组合物和抗蚀材料 Polymer composition and a resist material
12/25/2002CN1097057C Borate photoinitiators obtained from polyboranes
12/24/2002US6499007 Parameter editing method and semiconductor exposure system
12/24/2002US6499003 Method and apparatus for application of proximity correction with unitary segmentation
12/24/2002US6498803 Narrow band excimer or molecular fluorine laser with adjustable bandwidth
12/24/2002US6498801 Solid state laser for microlithography
12/24/2002US6498685 Maskless, microlens EUV lithography system
12/24/2002US6498649 Pattern reading apparatus
12/24/2002US6498640 Method to measure alignment using latent image grating structures
12/24/2002US6498635 Forming liquid crystal-on-silicon display and optical interference layers of silicon oxide and nitride; metallization of semiconductor wafers; photolithography
12/24/2002US6498401 Alignment mark set and method of measuring alignment accuracy
12/24/2002US6498352 Method of exposing and apparatus therefor
12/24/2002US6498351 Illumination system for shaping extreme ultraviolet radiation used in a lithographic projection apparatus
12/24/2002US6498350 Crash prevention in positioning apparatus for use in lithographic projection apparatus
12/24/2002US6498349 Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy
12/24/2002US6498226 Prepared from a cycloaliphatic diamine, especially adamantanediamine, and a cycloaliphatic fused ring dianhydride; heat resistance, low dielectric constant, and high transparency.
12/24/2002US6498106 Prevention of defects formed in photoresist during wet etching
12/24/2002US6498087 Method of increasing the conductivity of a transparent conductive layer
12/24/2002US6497996 Fine pattern forming method
12/24/2002US6497994 Photolithographic process for the formation of a one-piece needle
12/24/2002US6497993 Forming apertures in dielectric layers on semiconductor substrates by photoresist removal
12/24/2002US6497992 Process for manufacturing semiconductor integrated circuit device
12/24/2002US6497989 Method of manufacturing a planographic printing plate
12/24/2002US6497987 Photosensitive lithocholate derivative and chemically amplified photoresist composition containing the same
12/24/2002US6497982 Method for suppressing optical proximity effect bias within a wafer
12/24/2002US6497981 Method of forming color filter array
12/24/2002US6497048 Resist-dispenser nozzle calibration tool and method thereof
12/20/2002WO2002000756A1 Insulating resin composition, adhesive resin composition and adhesive sheeting
12/20/2002CA2413759A1 Resin composition for insulation material, resin composition for adhesive and adhesion sheet
12/19/2002WO2002102122A1 Star pinch x-ray and extreme ultraviolet photon source
12/19/2002WO2002101804A1 Exposure device, device manufacturing method, and temperature stabilization flow passage device
12/19/2002WO2002101802A1 Electron beam exposure system, electron beam exposing method, and method for fabricating semiconductor element
12/19/2002WO2002101801A1 Device ande method for predicting circuit pattern transfer characteristics and device and method for providing exposure system performance information and information outputting system and information outputting method
12/19/2002WO2002101602A1 Apparatus and methods for modeling process effects and imaging effects in scanning electron microscopy
12/19/2002WO2002101469A1 Method of processing lithographic printing plate precursors
12/19/2002WO2002101468A2 Design and layout of phase shifting photolithographic masks
12/19/2002WO2002101467A1 Method of forming thick resist pattern
12/19/2002WO2002101466A2 Exposure control for phase shifting photolithographic masks
12/19/2002WO2002101465A2 Phase conflict resolution for photolithographic masks
12/19/2002WO2002101464A2 Optical proximity correction for phase shifting photolithographic masks
12/19/2002WO2002101463A1 Patterning compositions using e-beam lithography and structures and devices made thereby
12/19/2002WO2002100903A1 Oxime ester photoinitiators having a combined structure
12/19/2002WO2002077712A3 Photoresist composition
12/19/2002WO2002073245A3 High power incoherent light source with laser array
12/19/2002WO2002067292A3 Semiconductor package and method of preparing same
12/19/2002WO2000043731A9 Multiple alignment mechanisms near shared processing device
12/19/2002US20020194576 Method of evaluating the exposure property of data to wafer
12/19/2002US20020193901 Exposure apparatus and method
12/19/2002US20020193622 For use as additives in chemical amplification photolithography, photoresists
12/19/2002US20020193542 Photosensitive polymer and chemically amplified photoresist composition containing the same
12/19/2002US20020192983 Method for fabricating organic thin film
12/19/2002US20020192945 Method of forming wiring structure by using photo resist having optimum development rate
12/19/2002US20020192693 Apparatus for polymer synthesis
12/19/2002US20020192684 Arrays for detecting nucleic acids
12/19/2002US20020192602 Forming nesting contour on a fiber optic array; nesting a surface of non-planar article against contour; exposing photoresist optically connected to proximal optical fiber surface within contours; developing; etching
12/19/2002US20020192601 Producing a film by using an organic solvent solution containing as essential components a thermoplastic resin, a photopolymerizable monomer and a photopolymerization initiator, exposing the film to light and developing the film
12/19/2002US20020192598 Defining multiple position-measurement marks on the reticle; using a reticle-inspection device detecting respective positional coordinates of marks on the reticle; mounting reticle in the microlithography apparatus and detecting
12/19/2002US20020192597 Method of manufacturing photopolymer plates
12/19/2002US20020192596 Photosensitive resin composition and color filter
12/19/2002US20020192595 Multi-layered resist structure and manufacturing method of semiconductor device
12/19/2002US20020192594 High etch rates as well as good light-absorbing properties
12/19/2002US20020192593 Used as chemically amplified resist, exhibits high sensitivity, resolution, radiation transmittance, and surface smoothness, and is free from the problem of partial insolublization during overexposure
12/19/2002US20020192592 Negative-working resist composition for electron beams or X-rays