Patents
Patents for G03F 7 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (127,176)
08/2003
08/13/2003EP1334407A2 A method for monitoring line width of electronic circuit patterns
08/13/2003EP1334406A2 Photolithographic mask
08/13/2003EP1334330A1 Position measuring device and method for determining a position
08/13/2003EP1285221A4 In-situ mirror characterization
08/13/2003EP1244559B1 Compressible plate for flexopgraphic printing and method for obtaining same
08/13/2003EP1021747B1 Optical lithography beyond conventional resolution limits
08/13/2003EP1012672B1 A negatively acting photoresist composition based on polyimide precursors
08/13/2003EP0931241B1 Method for correcting measurement errors in a machine measuring co-ordinates
08/13/2003CN1436324A Negative-acting chemically amplified photoresist composition
08/13/2003CN1436323A Method of reducing metal ion content of film-forming resin using liquid/liquid centrifuge
08/13/2003CN1435733A Substrate processing method and device, developing method and method for mfg. semiconductor device
08/13/2003CN1435732A 化学处理装置 Chemical treatment apparatus
08/13/2003CN1435731A 感光性树脂组合物 The photosensitive resin composition
08/13/2003CN1435730A Method for mfg. sensibilization pigment and photosensitive composition therewith
08/13/2003CN1435729A Positive photosensitive resin composition
08/13/2003CN1435728A Nanosize making die using spacer technique
08/13/2003CN1118003C Photoresist scavenger composition
08/13/2003CN1118002C Positive-action dry film photoresist with high resolution ratio
08/12/2003US6606739 Scaling method for a digital photolithography system
08/12/2003US6606738 Analytical model for predicting the operating process window for lithographic patterning techniques based on photoresist trim technology
08/12/2003US6606195 Optical unit and optical instrument having the same
08/12/2003US6606180 Light beam scanning device
08/12/2003US6606159 Optical storage system based on scanning interferometric near-field confocal microscopy
08/12/2003US6606152 Determination of center of focus by diffraction signature analysis
08/12/2003US6606149 Optical system adjusting method for energy beam apparatus
08/12/2003US6606146 Stage device, exposure apparatus incorporating the stage device, and method of using the same
08/12/2003US6606145 Exposure apparatus, microdevice, photomask, and exposure method
08/12/2003US6606144 Projection exposure methods and apparatus, and projection optical systems
08/12/2003US6605816 Reticle and direct lithography writing strategy
08/12/2003US6605815 Irradiating wavelength is selected to be in a region of low absorption by air
08/12/2003US6605814 Apparatus for curing resist
08/12/2003US6605678 Polymer, resist composition and patterning process
08/12/2003US6605516 Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns
08/12/2003US6605502 Isolation using an antireflective coating
08/12/2003US6605481 Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit
08/12/2003US6605417 Using aromatic sulfonic acid
08/12/2003US6605416 Compositions and processes for photogeneration of acid
08/12/2003US6605413 Stabilizing treatment to the photoresist layer while the photoresist layer is immersed in a liquid to change the material properties; crosslinking; photolithographic applications; semiconductor fabrication
08/12/2003US6605412 Resist pattern and method for forming wiring pattern
08/12/2003US6605411 Method for formation of semiconductor device pattern, method for designing photo mask pattern, photo mask and process for photo mask
08/12/2003US6605409 Positive resist composition
08/12/2003US6605408 Resist composition and patterning process
08/12/2003US6605407 For offset printing; imaging element comprises hydrophobic polymer particles in aqueous medium, a substance for converting light into heat, and an inorganic salt; for printing long run lengths on lower quality paper
08/12/2003US6605406 Photosensitive layer includes a polymeric photosensitive resin containing rhodanine-based crosslinkable unit and polyvinyl acetate; abrasion etching the substrate
08/12/2003US6605398 Methods and apparatus for controlling beam blur in charged-particle-beam microlithography
08/12/2003US6605397 Method of preparing pattern data to be used for different exposure methods
08/12/2003US6605394 Exposing a surface of said DUV photoresist to radiation from said direct write continuous wave laser.
08/12/2003US6605392 X-ray mask structure, and X-ray exposure method and apparatus using the same
08/12/2003US6605362 Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
08/12/2003US6605353 Polyimide derived from a dianhydride and diamine having hydroxyl or carboxyl groups, which are modified with a diepoxide or unsaturated group-containing epoxide; curable; heat resistance, dielectric, film-forming
08/12/2003US6605230 Stripping coatings or photoresists from wafer surfaces using mixtures of hydrogen fluoride or ammonium fluoride in sulfuric acid; efficiency
08/12/2003US6605226 Method for increased workpiece throughput
08/12/2003US6604465 Pin registration system for mounting different width printing plates
08/07/2003WO2003065434A1 Method of treating surface, semiconductor device, process for producing semiconductor device, and apparatus for treatment
08/07/2003WO2003065428A1 Image formation state adjustment system, exposure method, exposure apparatus, program, and information recording medium
08/07/2003WO2003065427A1 Exposure device and exposure method
08/07/2003WO2003065384A1 Composition for forming photosensitive dielectric material, and transfer film, dielectric material and electronic parts using the same
08/07/2003WO2003065124A1 Two-layer film and method of forming pattern with the same
08/07/2003WO2003065123A1 Optical element for forming an arc-shaped field
08/07/2003WO2003065122A1 Method of joining a workpiece and a microstructure by light exposure
08/07/2003WO2003065120A2 Microcontact printing
08/07/2003WO2003065119A2 Overlay measurements using periodic gratings
08/07/2003WO2003064977A2 Multiple degree of freedom interferometer
08/07/2003WO2003064968A1 Multiple-pass interferometry
08/07/2003WO2003010602A8 Photosensitive resin composition
08/07/2003WO2002050613A9 Method of curing a photosensitive material using evanescent wave energy
08/07/2003US20030149956 Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography
08/07/2003US20030149955 Rule-based opc evaluating method and simulation base opc model evaluating method
08/07/2003US20030149225 Resin useful for resist, resist composition and pattern forming process using the same
08/07/2003US20030149142 Polyimide precursor, manufacturing method thereof, and resin composition using polyimide precursor
08/07/2003US20030149124 Radiation curable resin composition for making colored three dimensional objects
08/07/2003US20030148910 Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
08/07/2003US20030148904 Cured polymers dissolving compositions
08/07/2003US20030148635 Method of manufacturing integrated circuit
08/07/2003US20030148624 Method for removing resists
08/07/2003US20030148608 Method of manufacturing integrated circuit
08/07/2003US20030148549 Method of manufacturing integrated circuit
08/07/2003US20030148228 Photosensitive composition for manufacturing optical waveguide, production method thereof and polymer optical waveguide pattern formation method using the same
08/07/2003US20030148227 Imageable hydrophilic layer, latent bronsted acid, binder, and acid activated crosslinking agent are heated and developed
08/07/2003US20030148225 Clear aperture of about one millimeter or less are fabricated from a layer of photoresist using a lithographic process to define the optical elements. A deep X- ray source is typically used to expose the photoresist. Exposure and development of
08/07/2003US20030148224 Semiconductor substrate having a photoresist mask formed thereon. The method also includes forming a conformal layer of polymer over the photoresist mask and a portion of the semiconductor substrate not covered by the photoresist mask
08/07/2003US20030148221 Mask for manufacturing semiconductor device and method of manufacture thereof
08/07/2003US20030148220 Technique of exposing a resist using electron beams having different accelerating voltages, and method of manufacturing a photomask using the technique
08/07/2003US20030148219 Silicon resist for photolithography at short exposure wavelengths and process for making photoresists
08/07/2003US20030148218 Printing plate precursor, image forming method employing the same, and printing method
08/07/2003US20030148214 Resins for resists and chemically amplifiable resist compositions
08/07/2003US20030148213 Resist composition
08/07/2003US20030148212 Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
08/07/2003US20030148211 Sulfonium salt and use thereof
08/07/2003US20030148210 One monomer unit represented by following Formula (I): wherein R1, R2, R3, R4 and R5 are the same or different and are each a hydrogen atom or a methyl group; m, p and q each denote an integer of from 0 to 2; and n denotes 0 or 1, where the
08/07/2003US20030148209 Substrate provided thereon with a light- sensitive layer containing a fluoro-aliphatic group-containing copolymer prepared by copolymerizing at least (a) an addition polymerizable monomer having, on a side chain, a
08/07/2003US20030148206 Acid generator capable of generating an acid by irradiation with actinic ray or radiation and having a structure represented by formula (I) defined in the specification and (B) a resin having a monocyclic or polycyclic alicyclic
08/07/2003US20030148198 Evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed on wafers
08/07/2003US20030148194 Vacuum ultraviolet transmitting direct deposit vitrified silicon oxyfluoride lithography glass photomask blanks
08/07/2003US20030148193 Capable of implementing off-axis illumination (OAI), and a method of fabricating the same, are provided. The photomask includes a transparent substrate, a plurality of opaque patterns formed on the front surface of the transparent
08/07/2003US20030147643 Substrate processing apparatus and substrate transferring method
08/07/2003US20030147499 Plasma-type X-ray generators encased in vacuum chambers exhibiting reduced heating of interior components, and microlithography systems comprising same
08/07/2003US20030147161 Form-error-cancelling mirror-support devices and related methods, and microlithography systems comprising same
08/07/2003US20030147155 Optical element holding device
08/07/2003US20030147149 Reflection type projection optical system, exposure apparatus and device fabrication method using the same