Patents
Patents for G03F 7 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (127,176)
11/2003
11/11/2003US6645898 Method for purification of lens gases used in photolithography
11/11/2003US6645881 Method of forming coating film, method of manufacturing semiconductor device and coating solution
11/11/2003US6645880 Treating solution applying method
11/11/2003US6645874 Delivery of dissolved ozone
11/11/2003US6645856 Method for manufacturing a semiconductor device using half-tone phase-shift mask to transfer a pattern onto a substrate
11/11/2003US6645851 Method of forming planarized coatings on contact hole patterns of various duty ratios
11/11/2003US6645793 Manufacturing method and manufacturing device of microstructure
11/11/2003US6645744 Using baths to which are added a biogenic catalyst (in particular, an enzyme) which selectively acts (etching) upon a preselectable thin layer; less expensive and environmentally friendly; thermally controlled; photoresists
11/11/2003US6645707 First exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the
11/11/2003US6645703 Methods of photo-processing photoresist
11/11/2003US6645702 Treat resist surface to prevent pattern collapse
11/11/2003US6645701 Exposure method and exposure apparatus
11/11/2003US6645700 Aqueous alkaline developing system for alkaline-developable lithographic printing plates and a method for its use are disclosed. The developing system comprises one or more water-soluble suppressors of the following structure: R1(CHOH)nR2
11/11/2003US6645699 Processing a lithographic printing plate while it is mounted in a plate-setter or a printing press, without risk of damaging or contaminating electrooptical components
11/11/2003US6645698 Photoresist compositions comprising a resin binder having acid labile blocking groups requiring an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon
11/11/2003US6645697 Photopolymerizable composition and photopolymerizable lithographic printing plate
11/11/2003US6645696 Photoimageable composition
11/11/2003US6645695 Crosslinked polymeric particles and a photoactive component, wherein the polymeric particles comprise cleavable group(s); free of surfactant; forming relief images
11/11/2003US6645694 Pattern formation material and pattern formation method
11/11/2003US6645693 Resist composition
11/11/2003US6645692 Mixture of acid generator, binder and surfactant
11/11/2003US6645689 Copolymer for use in coating compositions for printing plate precursors, the copolymer comprising units A, B, and a unit C comprising a cyclic terminal urea group, wherein unit A is present in an amount of about 5 to about 50 mol %
11/11/2003US6645684 Error reduction in semiconductor processes
11/11/2003US6645683 Control system and methods for photolithographic processes
11/11/2003US6645682 Thinner for rinsing photoresist and method of treating photoresist layer
11/11/2003US6645678 Semiconductor wafer undergoes two exposures using different masks
11/11/2003US6645677 Preparation of patterned reticles to be used as masks in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a masking layer on a reticle. The methods and devices
11/11/2003US6645676 Electron beam exposure mask, electron beam exposure method, method of fabricating semiconductor device, and electron beam exposure apparatus
11/11/2003US6645553 Recording material matting process
11/11/2003US6644855 Stage device, exposure apparatus, device manufacturing method and movement guidance method
11/11/2003US6644324 Laser discharge chamber passivation by plasma
11/06/2003WO2003092256A2 Projection method and projection system comprising an optical filtering process
11/06/2003WO2003092063A1 Thin-film processing device
11/06/2003WO2003092057A1 Exposure system and device manufacturing method
11/06/2003WO2003092056A1 Exposure apparatus and device fabrication method using the same
11/06/2003WO2003092055A1 Substrate treatment apparatus
11/06/2003WO2003091806A1 Method for removing photoresist
11/06/2003WO2003091805A1 Method, device and computer program product for lithography
11/06/2003WO2003091804A1 Method for producing microhole structures
11/06/2003WO2003091377A1 Non-corrosive cleaning compositions for removing etch residues
11/06/2003WO2003091376A1 Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
11/06/2003WO2003091175A1 Synthetic quartz glass for optical member, projection exposure device, and projection exposure method
11/06/2003WO2003091022A1 Stabilized infrared-sensitive polymerizable systems
11/06/2003WO2003090985A1 Device and method for transferring a pattern to a substrate
11/06/2003WO2003090955A1 Method and apparatus for production of a cast component
11/06/2003WO2003090942A1 Composition and method for removing photoresist materials from elelectronic components
11/06/2003WO2003090792A2 Method and apparatus for treating a substrate with an ozone-solvent solution iii
11/06/2003WO2003078976A3 Excimer laser inspection system
11/06/2003WO2003054630A3 Device and method for modifying the surface of a workpiece using photonic radiation
11/06/2003WO2003038875A3 Method for photolithographic structuring by means of a carbon hard mask layer which has a diamond-like hardness and is deposited by means of a plasma method
11/06/2003WO2003038386A3 Real-time component monitoring and replenishment system for multicomponent fluids
11/06/2003WO2003021727A3 Line selected f2 two chamber laser system
11/06/2003WO2003010605A3 Pattern generation method and apparatus using cached cells of hierarchical data
11/06/2003WO2002077716A3 Scanning probe based lithographic alignment
11/06/2003WO2002077484A3 Method and device for vibration control
11/06/2003WO2002044814A3 Photoresist compositions comprising bases and surfactants for microlithography
11/06/2003US20030208728 Method and system for simulating resist and etch edges
11/06/2003US20030207959 Compositions and methods for use in three dimensional model printing
11/06/2003US20030207587 Semiconductor constructions; and methods of forming semiconductor constructions
11/06/2003US20030207577 Polishing polymer surfaces on nonporous CMP pads
11/06/2003US20030207563 Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization
11/06/2003US20030207554 Method for making semiconductor device
11/06/2003US20030207521 Manufacturing use of photomasks with an opaque pattern comprising an organic layer photoabsorptive to exposure light with wavelengths exceeding 200 nm
11/06/2003US20030207215 Optical devices made from radiation curable fluorinated compositions
11/06/2003US20030207213 An apparatus and method for providing gross location, planarization, and mechanical restraint to one or more electronic components such as semiconductor dice to be subjected to stereolithographic processing. A double platen
11/06/2003US20030207212 Optics device is provided using one or more layers of an optically-transparent polymer resist having a viscosity between 2,000 and 100,000 centipoise or that is otherwise sufficient to allow stacking of one or more layers of the
11/06/2003US20030207209 6Planarizing an ink jet heater chip. The resin formulation includes a multifunctional epoxy component, a difunctional epoxy component, a silane coupling agent, an aryl sulfonium salt photoinitiator, and a non-photoreactive solvent. The
11/06/2003US20030207208 Intermediate layer composition for three-layer resist process and pattern formation method using the same
11/06/2003US20030207207 Structure employs a dual hardmask technique in a dual damascene process. The method includes using amorphous carbon as a first hardmask layer capable of being etched by a second etch process, and a second hardmask layer capable of being
11/06/2003US20030207205 Provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such
11/06/2003US20030207204 A photopolymerizable composition comprising a polymer having a radical polymerizable group and a unit represented by the following formula (I): wherein Q1 represents a cyano group or COX2; X1 and X2 each independently represent -R- or a halogen
11/06/2003US20030207202 Copolymer comprising repeating units derived from (A) at least one fluoroalkyl (meth) acrylate image-forming composition, a presensitized plate useful for preparing a lithographic printing plate or a photo resist composition comprising the
11/06/2003US20030207201 Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method
11/06/2003US20030207200 Phenolic/alicyclic copolymers and photoresists
11/06/2003US20030207199 Adhesion promoting polymeric materials and planographic printing elements containing them
11/06/2003US20030207198 Laser addressable thermal transfer imaging element with an interlayer
11/06/2003US20030207196 Method which comprises the steps of feeding an image receptor sheet and a plural number of thermal transfer sheets from a recording medium cassette, superposing the image receptor layer of the image receptor sheet upon the image formation
11/06/2003US20030207195 Acid and alkali etching resistant protective layer; image formation of microelectronic device
11/06/2003US20030207185 Interleaf paper superimposed thereon and/or an original plate for making a dummy plate carrying an interleaf paper superimposed thereon are processed in a plate-setter provided with an automatic interleaf paper-removing mechanism and an
11/06/2003US20030207183 Manufacturing method of a phase-shift mask, method of forming a resist pattern and manufacturing method of a semiconductor device
11/06/2003US20030207181 Mask includes a mask substrate and mask patterns arranged on the mask substrate such that a critical dimension (CD), represented by the width of each of the mask patterns, and a phase of the mask patterns have a size proportional to a SINC
11/06/2003US20030207139 A high-quality protective film for a dry film resist is provided. A film of a polyethylene is used as the protective film, the polyethylene being prepared by pressurizing ethylene with use of an ultra-high pressure compressor and
11/06/2003US20030207029 Polymeric material film upon a wafer rotatably mounted within a spin coater; the wafer having a surface, including the following steps. A first step of rotating the wafer on an axis perpendicular to the wafer surface while applying a
11/06/2003US20030206340 Reflective spectral filtering of high power extreme ultra-violet radiation
11/06/2003US20030206337 Exposure apparatus for irradiating a sensitized substrate
11/06/2003US20030206320 Holographic media with a photo-active material for media protection and inhibitor removal
11/06/2003US20030206303 Overlay alignment mark design
11/06/2003US20030206298 Overlay measurements using zero-order cross polarization measurements
11/06/2003US20030206289 Imaging optical system evaluation method, imaging optical system adjustment method, exposure apparatus and exposure method
11/06/2003US20030206283 Method of manufacturing a device by employing a lithographic apparatus including a sliding electron-optical element
11/06/2003US20030206282 Projection exposure methods and apparatus, and projection optical systems
11/06/2003US20030206281 Maskless lithography with sub-pixel resolution
11/06/2003US20030206280 Optical apparatus and exposure apparatus incorporating the apparatus
11/06/2003US20030205749 Localized masking for semiconductor structure development
11/06/2003US20030205658 Use of a conductive layer allows patterning of the masking layer using electron beam pattern generators. The substrate is etched using the patterned masking layer to produce a template.
11/06/2003US20030205657 Use of a conductive layer allows patterning of the masking layer using electron beam pattern generators. The substrate is etched using the patterned masking layer to produce a template.
11/06/2003US20030205563 Method and system for precisely positioning a waist of a material-processing laser beam to process microstructures within a laser-processing site
11/06/2003US20030205328 Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
11/06/2003US20030205196 Substrate processing apparatus and substrate processing method
11/05/2003EP1359613A2 Method of fabricating high density sub-lithographic features on a substrate