Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
04/1998
04/01/1998EP0833367A2 Inductively coupled plasma reactor with symmetrical parallel multiple coils having a common RF terminal
04/01/1998EP0832407A1 Passive gas substrate thermal conditioning apparatus and method
04/01/1998EP0801606A4 Cleaning method
04/01/1998EP0677595B1 Device for the vacuum-plasma treatment of articles
03/1998
03/31/1998US5733419 Electrodes, counterelectrodes, plasma discharge
03/31/1998US5733405 Plasma processing apparatus
03/26/1998DE19637194A1 Gasgemisch und Verfahren zum Trockenätzen von Metallen, insbesondere Kupfer, bei niedrigen Temperaturen Gas mixture and process for dry etching of metals, in particular copper, at low temperatures
03/25/1998EP0831516A2 Device and method for processing a plasma to alter the surface of a substrate using neutrals
03/25/1998CN1177204A Etching method
03/25/1998CN1177169A Method for forming patterned metallic layer in thin film magnetic head
03/25/1998CN1177168A Surface modification of magnetic heads
03/24/1998US5730808 Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates
03/19/1998WO1998011276A1 Gas mixture and method of dry etching metals, in particular copper, at low temperatures
03/18/1998EP0828618A1 Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure
03/18/1998CN1176486A Surface wave plasma processing apparatus
03/17/1998US5728608 Sulfur hexafluoride and chlorine
03/17/1998US5728227 Method for removing a diffusion coating from a nickel base alloy
03/10/1998US5726067 Method of and apparatus for monitoring etching by-products
03/10/1998US5725677 Dry cleaning process for cleaning a surface
03/04/1998EP0827182A2 Surface wave plasma processing apparatus
03/04/1998CN1174898A Low pressure and low power Cl2/HCl process for sub-micron metal etching
02/1998
02/28/1998CA2214250A1 Device for cathodic cleaning of wire
02/18/1998EP0824269A2 Method for etching an Al metallization by a C12/HC1 based plasma
02/17/1998US5719073 Microstructures and single mask, single-crystal process for fabrication thereof
02/17/1998US5718796 Vapor phase etching in vessel which also contains an endpoint detector
02/12/1998WO1998006128A1 Dry etching method and device used for the same
02/12/1998WO1998006126A1 Method and device for dry etching
02/11/1998EP0823726A1 Process for plasma enhanced anisotropic etching of metals, metal oxides and their mixtures
02/11/1998EP0823279A2 Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors
02/10/1998US5717294 For processing a target surface of a substrate
02/10/1998US5716485 Electrode designs for controlling uniformity profiles in plasma processing reactors
02/10/1998US5716484 Contaminant reduction improvements for plasma etch chambers
02/04/1998EP0822584A2 Method of surface treatment of semiconductor substrates
02/04/1998EP0822572A1 Method and apparatus for plasma treatment of a surface
02/03/1998US5714031 Topology induced plasma enhancement for etched uniformity improvement
01/1998
01/28/1998EP0821396A2 Method and apparatus for measuring etch uniformity of a semiconductor
01/28/1998EP0821085A1 Apparatus for introducing gas into a rapid thermal processing chamber
01/28/1998EP0821084A1 Multi-zone gas flow control in a process chamber
01/28/1998EP0820641A1 Method for water vapor enhanced charged-particle-beam machining
01/27/1998US5711850 Plasma processing apparatus
01/27/1998US5711849 Process optimization in gas phase dry etching
01/21/1998EP0820093A1 Etching organic antireflective coating from a substrate
01/21/1998EP0820087A2 RF plasma reactor with hybrid conductor and multi-radius dome ceiling
01/21/1998CN1170777A Apparatus and method of preventing residual reaction gas from dry etcher
01/20/1998US5709784 Process and apparatus for workpiece coating
01/20/1998US5709519 Plasma processing apparatus
01/15/1998WO1998001899A1 Cleaning gas
01/13/1998US5707487 Method of manufacturing semiconductor device
01/08/1998WO1998000859A1 Method and apparatus for etching a semiconductor wafer
01/08/1998WO1998000858A1 Plasma etch reactor and method
01/08/1998DE19727253A1 Multiple or single junction photovoltaic device especially solar cell
01/08/1998CA2259976A1 Plasma etch reactor and method
01/08/1998CA2259972A1 Method and apparatus for etching a semiconductor wafer
01/07/1998EP0817256A1 A wafer chuck for inducing an electrical bias across wafer heterojunctions
01/07/1998EP0817237A2 Methods and apparatus for treating workpieces with plasmas
01/07/1998EP0817236A2 Plasma etching electrode and process for production thereof
01/07/1998EP0741909A4 Methods for improving semiconductor processing
01/06/1998US5705443 Etching method for refractory materials
01/06/1998US5705081 Etching method
01/06/1998US5705080 Plasma-inert cover and plasma cleaning process
12/1997
12/31/1997CN1169094A Plasma source
12/30/1997US5702564 Flow rate of chlorine plasma is reduced during high density chlorine plasma etching of conductive pattern when the conductive material is substantially removed from the open field
12/30/1997US5702562 Monitoring simultaneously plasma emission wavelengths and emission intensities; calculating etching rate and selectivity ratio of etched film and base film
12/30/1997US5702530 Distributed microwave plasma reactor for semiconductor processing
12/29/1997EP0814501A2 Method for etching metal silicide with high selectivity to polysilicon
12/29/1997EP0814500A2 Method for etching polycide structures
12/29/1997EP0814495A2 Adjusting DC bias voltage in plasma chamber
12/29/1997EP0814179A1 Method for removing a diffusion coating from a nickel base alloy
12/29/1997EP0813930A2 Method for repairing a nickel base superalloy article
12/24/1997CN1168535A Plasma etching method in manufacturing process of semiconductor device
12/18/1997DE19654178A1 Verfahren zur Plasmaätzung bei der Herstellung eines Halbleiterbauelements A method of plasma etching in the manufacture of a semiconductor device
12/17/1997EP0813227A2 RF plasma processors
12/16/1997US5698928 Thin film piezoelectric arrays with enhanced coupling and fabrication methods
12/16/1997US5698473 From high energy plasma and densified in presence of oxygen to form highly planar interlevel dielectric
12/16/1997US5698113 Two step dry etching process first removes sio2 overlay with fluorine-containing gas, then removes mo/si layers with chlorine-containing gas
12/16/1997US5698071 Etching aftertreatment under vacuum
12/10/1997EP0811704A1 Surface modification of magnetic heads
12/10/1997EP0799557A4 High frequency induction plasma method and apparatus
12/10/1997CA2207154A1 Inductively coupled source for deriving substantially uniform plasma flux
12/09/1997US5695602 Process of etching silicon nitride layer by using etching gas containing sulfur hexafluoride, hydrogen bromide and oxygen
12/09/1997US5695570 Purification by covering with water, radiating with ultraviolet light, drainage, drying with nitrogen
12/09/1997US5695569 Removal of metal contamination
12/09/1997US5695566 Apparatus and method for plasma-processing
12/04/1997WO1997046057A1 Plasma treatment apparatus and plasma treatment method
12/04/1997WO1997045857A1 Apparatus for plasma jet treatment of substrates
12/04/1997WO1997045856A1 Method for treating articles with a plasma jet
12/03/1997EP0810816A1 Balanced source for plasma system
12/03/1997EP0507885B1 A low frequency inductive rf plasma reactor
12/03/1997CN1166864A Method of forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cathodes
12/02/1997US5693238 Method for improving the rate of a plasma enhanced vacuum treatment
12/02/1997US5693234 Method for producing at least one recess in a surface of a substrate apparatus for carrying out the said method and use of the product thus obtained
12/02/1997US5693182 Method for damage etching the back side of a semiconductor disk having a protected front side
12/02/1997US5693180 Ion milling with silicon tetrachloride and chloride gas mixture
12/02/1997US5693179 Contaminant reduction improvements for plasma etch chambers
11/1997
11/26/1997EP0809283A2 Method of treating wafers
11/26/1997EP0809274A1 Apparatus and method for manufacturing an electronic device
11/26/1997EP0808918A2 Plasma processing apparatus and processing method
11/26/1997EP0594714B1 Antipilferage markers
11/26/1997CN1166145A Selective removal of material by irradiation
11/25/1997US5690050 Plasma treating apparatus and plasma treating method
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