Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
03/2000
03/21/2000US6039835 Etching apparatus and method of etching a substrate
03/14/2000US6037267 Method of etching metallic film for semiconductor devices
03/14/2000US6037264 Method for removing redeposited veils from etched platinum
03/14/2000US6036816 Apparatus for processing a sample having a metal laminate
03/14/2000US6035804 Process chamber apparatus
03/09/2000WO2000013219A1 Apparatus for plasma processing
03/07/2000US6033586 Apparatus and method for surface treatment
03/07/2000US6033582 Irregularly etched medical implant device is provided having random non-uniform relief patterns on the surface; roughened surface amenable to bioadhesion
02/2000
02/29/2000US6031198 Plasma processing method and apparatus
02/29/2000US6030515 Producing an insulating layer only on each of the side walls of a plurality of trenches in a polymer layer; filling using an electroplating process and then removing the polymer layer without removing the insulating layer; short circuiting
02/29/2000US6030486 Magnetically confined plasma reactor for processing a semiconductor wafer
02/22/2000US6028009 Process for fabricating a device with a cavity formed at one end thereof
02/22/2000US6027606 Center gas feed apparatus for a high density plasma reactor
02/22/2000US6027604 Dry etching apparatus having upper and lower electrodes with grooved insulating rings or grooved chamber sidewalls
02/17/2000DE19518185C2 Verfahren zur Agglomeratstrahl-Mikrostrukturierung Process for microstructuring Agglomeratstrahl
02/15/2000US6024885 Process for patterning magnetic films
02/15/2000US6024045 Apparatus for fabricating semiconductor device and method for fabricating semiconductor device
02/08/2000US6022805 Method of fabricating semiconductor device with a multi-layered interconnection structure having a low contact resistance
02/08/2000US6022446 Shallow magnetic fields for generating circulating electrons to enhance plasma processing
02/02/2000EP0977243A2 Plasma etching apparatus using halogen type gas plasma
02/01/2000US6020570 Plasma processing apparatus
01/2000
01/27/2000WO2000004576A1 Method and apparatus for plasma processing
01/19/2000CN2359295Y Small-angle two-sided ion reduction instrument sample stage
01/19/2000CN1241806A Process for patterning conductive line without after-corrosion and apparatus use in process
01/12/2000EP0700524B1 Process for producing surface micromechanical structures
01/11/2000US6013575 Method of selectively depositing a metal film
01/11/2000CA2113111C Antipilferage markers
01/06/2000WO2000001007A1 Plasma processing method
01/06/2000WO2000001003A1 Device and method for plasma processing
01/05/2000EP0968525A1 Uv/halogen metals removal process
01/04/2000US6010919 Method for manufacturing semiconductor devices by use of dry etching
01/04/2000US6010603 Using ions
01/04/2000CA2016893C Apparatus for the continuous etching and aluminum plating of stainless steel strips
12/1999
12/29/1999WO1999067443A1 Methods for etching an aluminum-containing layer
12/28/1999US6008140 Copper etch using HCI and HBr chemistry
12/28/1999US6008139 Method of etching polycide structures
12/28/1999US6008132 Dry etching suppressing formation of notch
12/28/1999US6007672 Dustless process using an electrode having a specific flatess and a camber of the front surface side of the being recessed and the back is projecting; fine patterns for semiconductor wafers for integrated circuits and optical apparatus
12/28/1999US6007671 Having a vacuum chamber where part of an inside wall is silicon oxide; controlling the temperature of the silicon dioxide to prevent hydrogen atoms from deposit and recombining on the internal wall
12/23/1999WO1999066769A1 Plasma processor
12/23/1999WO1999066531A1 Plasma processing apparatus
12/21/1999US6005217 Microwave plasma processing method for preventing the production of etch residue
12/21/1999US6004882 Method for etching Pt film of semiconductor device
12/15/1999EP0964425A2 Apparatus for processing a work piece with a uniformly neutralised ion beam
12/15/1999EP0792571B1 Method and device for measuring ion flow in a plasma
12/14/1999CA2048470C Plasma processing apparatus having an electrode enclosing the space between cathode and anode
12/07/1999US5998297 Method of etching copper or copper-doped aluminum
12/07/1999US5997757 Method of forming connection hole
12/07/1999US5997687 Plasma processing apparatus
12/02/1999WO1999054908A8 Crystalline gas distributor for semiconductor plasma etch chamber
12/01/1999EP0961308A2 Quartz glass member for use in dry etching and dry etching system equipped with the same
11/1999
11/30/1999US5994750 Microstructure and method of forming the same
11/30/1999US5994235 Methods for etching an aluminum-containing layer
11/30/1999US5994234 Multilayer film of polysilicon on semiconductor substrate
11/30/1999US5993678 Device and method for processing a plasma to alter the surface of a substrate
11/30/1999US5993597 Single-crystal or polycrystalline silicon, which has an electric resistance of 0.0001-40 omega cm, whose crystal faces are (100), which is doped with boron or phosphorus, whose surface has been acid etched & vacuum heat treated
11/25/1999DE19919384A1 Verfahren zum Trockenätzen und Vakuumbehandlungsreaktor A method for dry etching and vacuum treatment reactor
11/23/1999US5989928 Method and device for detecting end point of plasma treatment, method and device for manufacturing semiconductor device, and semiconductor device
11/23/1999US5989625 Injecting reactive gas with trifluorocarbon groups which bond chemically with the atoms in the surface of substrate
11/23/1999US5988104 Plasma treatment system
11/18/1999WO1999059198A1 Plasma etching method
11/17/1999CN2349218Y Attached type mask assembly for quasi-molecule laser etching
11/16/1999US5985750 Selectively etching aluminum wires, reforming surface of oxide film beneath wires, forming an organic ingterlayer film
11/16/1999US5983829 Microwave plasma etching apparatus
11/11/1999WO1999057334A1 Method and apparatus for treating metal surfaces by dry process
11/11/1999WO1999057332A1 A method of etching an opening
11/11/1999CA2330998A1 A method of etching an opening
11/11/1999CA2293610A1 Method and apparatus for treating metal surfaces by dry process
11/09/1999US5981904 Tandem cathodic cleaning device for wire
11/09/1999US5980769 Plasma etching method
11/09/1999US5980766 Process optimization in gas phase dry etching
11/04/1999WO1999056309A1 Protective member for inner surface of chamber and plasma processing apparatus
11/02/1999US5976986 Low pressure and low power C12 /HC1 process for sub-micron metal etching
11/02/1999US5976394 Method for dry-etching a platinum thin film
11/02/1999US5976308 High density plasma CVD and etching reactor
10/1999
10/28/1999WO1999054908A1 Crystalline gas distributor for semiconductor plasma etch chamber
10/27/1999EP0951963A2 Wafer flattening process, wafer flattening system, and wafer
10/27/1999EP0951578A1 Precision etching and coating system
10/26/1999US5972161 Dry etcher apparatus for preventing residual reaction gas from condensing on wafers after etching
10/21/1999WO1999053533A1 Apparatus for gas processing
10/19/1999US5968847 Process for copper etch back
10/12/1999US5965042 Method and apparatus for laser marking with laser cleaning
10/07/1999DE19814760A1 Ion beam machining process for surface leveling, shaping or shape correction of mechanical, micromechanical, electronic and high quality optical components
10/05/1999US5961851 Microwave plasma discharge device
10/05/1999US5961773 Plasma processing apparatus and plasma processing method using the same
10/05/1999US5961361 Method for manufacturing electrode plate for plasma processing device
10/05/1999CA2182342C Method for radiofrequency wave etching
09/1999
09/30/1999WO1999029922A8 Apparatus for surface modification of polymer, metal and ceramic materials using ion beam
09/28/1999US5959409 Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method protecting such heated metal surfaces
09/28/1999US5958799 Ion beam machining in presence of water vapor to quickly sputter away portions photoresist and expose photoresist cross-section without damage to underlying integrated circuit substrate material, then analyzing cross section
09/28/1999US5958644 Process to form light-receiving member with outer layer made by alternately forming and etching
09/28/1999US5958265 Substrate holder for a plasma processing system
09/28/1999US5958141 Dry etching device
09/28/1999US5958134 Process equipment with simultaneous or sequential deposition and etching capabilities
09/22/1999EP0721514B1 Magnetically enhanced multiple capacitive plasma generation apparatus and related method
09/21/1999US5955673 Cathode sputtering targets selected by ultrasonic inspection for their low level of particle emission
09/21/1999US5954884 Demetallization substrates with chlorine, radiation
09/16/1999WO1999046812A1 Process for copper etch back
09/14/1999US5952245 Method for processing samples
09/14/1999US5951879 Forming a polysilicon layer on a silicon dioxide layer formed on a silicon substrate, masking, etching, wherein said etching step comprises using a mixed gas of an etching gas and an oxygen gas
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