Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769) |
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03/25/1999 | WO1999014789A1 Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil |
03/24/1999 | EP0902962A1 Apparatus for plasma jet treatment of substrates |
03/24/1999 | EP0902961A1 Method for treating articles with a plasma jet |
03/24/1999 | CN1211831A Structuring method |
03/23/1999 | US5886473 Surface wave plasma processing apparatus |
03/23/1999 | US5885472 Method for detecting etching endpoint, and etching apparatus and etching system using the method thereof |
03/17/1999 | EP0902461A2 Process for forming structures with high aspect ratio |
03/17/1999 | EP0902456A2 Corrosion-resistant system and method for a plasma etching apparatus |
03/17/1999 | EP0806128B1 Method of selectively removing a metallic layer from a non-metallic substrate |
03/17/1999 | CN1211067A Method for producing structure with large ratio of height and width |
03/11/1999 | WO1999012195A1 Dry etching method |
03/09/1999 | US5880033 Method for etching metal silicide with high selectivity to polysilicon |
03/09/1999 | US5879575 Self-cleaning plasma processing reactor |
03/03/1999 | CN1209651A Structure formation method |
03/03/1999 | CN1209645A High-speed deepth-variable etching method and apparatus thereof |
02/25/1999 | WO1999009587A2 Method of etching copper for semiconductor devices |
02/24/1999 | CN1209201A Ultrasonic sputtering target testing method |
02/23/1999 | US5874705 Method of and apparatus for microwave-plasma production |
02/23/1999 | US5874363 Polycide etching with HCL and chlorine |
02/23/1999 | US5874012 Plasma processing apparatus and plasma processing method |
02/23/1999 | US5874011 Laser-induced etching of multilayer materials |
02/16/1999 | US5872053 Forming electrical connections between levels of a semiconductor device. |
02/09/1999 | US5869400 Method for dry-etching using gaseous bismuth halide compound |
02/09/1999 | US5868897 Device and method for processing a plasma to alter the surface of a substrate using neutrals |
02/09/1999 | US5868854 Method and apparatus for processing samples |
02/09/1999 | US5868849 Surface processing device |
02/09/1999 | US5868848 Plasma processing apparatus |
02/03/1999 | EP0894154A1 RECOVERY OF Mo/Si MULTILAYER COATED OPTICAL SUBSTRATES |
02/02/1999 | US5866485 Borophosphosilicate glass |
02/02/1999 | US5866483 Method for anisotropically etching tungsten using SF6, CHF3, and N2 |
02/02/1999 | US5865938 Wafer chuck for inducing an electrical bias across wafer heterojunctions |
02/02/1999 | US5865937 Broad-band adjustable power ratio phase-inverting plasma reactor |
01/28/1999 | WO1999004425A1 Method for detecting the transition of different materials in semiconductor structures |
01/26/1999 | US5863841 Plasma diffusion control apparatus |
01/21/1999 | WO1999003143A1 Patterned copper etch for micron and submicron features, using enhanced physical bombardment |
01/19/1999 | US5861601 Microwave plasma processing apparatus and method |
01/19/1999 | US5861103 Reactive ion etching producing semiconductor devices |
01/19/1999 | US5861086 Method and apparatus for sputter etch conditioning a ceramic body |
01/13/1999 | EP0889976A1 Showerhead for uniform distribution of process gas |
01/13/1999 | CN1204864A Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing |
01/12/1999 | US5859501 Radio frequency generating systems and methods for forming pulse plasma using gradually pulsed time-modulated radio frequency power |
01/12/1999 | US5858259 Plasma processing apparatus and method |
01/12/1999 | US5858258 Plasma processing method |
01/12/1999 | US5858162 Plasma processing apparatus |
01/07/1999 | EP0889506A2 Etching process |
01/07/1999 | EP0889359A2 Etching method for manufacture of a phase-shift mask |
01/07/1999 | DE19728473A1 Layer structuring by dry etching process |
01/05/1999 | US5855725 Vacuum processing system and method of removing film deposited on inner face of vacuum vessel in the vacuum processing system |
01/05/1999 | US5855685 Plasma enhanced CVD apparatus, plasma enhanced processing apparatus and plasma enhanced CVD method |
12/30/1998 | EP0887836A2 Electronic device fabrication apparatus |
12/30/1998 | EP0886880A1 Method and apparatus for the coating of workpieces |
12/30/1998 | CN1203148A Micro structure and its manufacture method |
12/29/1998 | US5854104 Process for fabricating nonvolatile semiconductor memory device having a ferroelectric capacitor |
12/29/1998 | US5853602 Method of dry etching for patterning refractory metal layer improved in etching rate, anisotropy and selectivity to silicon oxide |
12/29/1998 | US5853523 Plasma-etching electrode plate |
12/29/1998 | US5853521 Multi-cathode electron beam plasma etcher |
12/23/1998 | EP0886311A1 Method for manufacturing semiconductor components |
12/23/1998 | EP0886310A2 Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing |
12/23/1998 | EP0886181A2 Micro structure and its manufacture method |
12/23/1998 | EP0885981A2 Process and apparatus for treating substrates by means of ions produced by low voltage arc discharge |
12/23/1998 | CN1202723A Method for manufacturing semiconductor device having metal silicide film |
12/22/1998 | US5852328 Semiconductor device and method of manufacturing the same |
12/16/1998 | EP0884760A2 Electron-beam excited plasma generator |
12/15/1998 | US5849092 Process for chlorine trifluoride chamber cleaning |
12/10/1998 | WO1998055293A1 Method of forming a silicon layer on a surface |
12/10/1998 | CA2288757A1 Method of forming a silicon layer on a surface |
12/09/1998 | EP0883159A2 Plasma processing apparatus |
12/09/1998 | EP0882812A1 Method of manufacturing member for thin-film formation apparatus and the member for the apparatus |
12/08/1998 | US5847454 Electrically isolated released microstructures |
12/08/1998 | US5846886 Metal film etching method |
12/08/1998 | US5846884 Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing |
12/08/1998 | US5846849 Microstructure and single mask, single-crystal process for fabrication thereof |
12/08/1998 | US5846441 Method for forming a patterned metallic layer in a thin film magnetic head |
12/08/1998 | US5846331 Plasma processing apparatus |
12/02/1998 | EP0881662A1 Plasma processing apparatus and plasma processing method |
12/02/1998 | EP0880694A1 Ultrasonic sputtering target testing method |
12/02/1998 | EP0880369A2 Surface modification of medical implants |
12/02/1998 | CN1200564A Mfg. method of semiconductor device |
12/01/1998 | US5843848 Method of plasma etching |
12/01/1998 | US5843289 Surface modification of medical implants |
12/01/1998 | US5843277 Dry-etch of indium and tin oxides with C2H5I gas |
11/25/1998 | EP0880163A2 Plasma processing method and apparatus |
11/24/1998 | US5840630 FBI etching enhanced with 1,2 di-iodo-ethane |
11/19/1998 | DE19730644C1 Detecting material transition in semiconductor structure |
11/17/1998 | US5837617 Heterojunction compound semiconductor device and method of manufacturing the same |
11/17/1998 | US5837093 Apparatus for performing plain etching treatment |
11/10/1998 | US5835315 Wafer including scribe line grooves for separating thin film heads and process for making the same |
11/03/1998 | US5830807 Successive dry etching of alternating laminate |
11/03/1998 | US5830376 Topographical selective patterns |
11/03/1998 | US5830310 Apparatus and method for detecting end point of post treatment |
10/28/1998 | EP0874251A2 Process for fabricating a device having a hole at an extremity |
10/27/1998 | US5827436 Boron trichloride, chlorine etching gases and an inert gas are used in first step of etching aluminum alloy film using high frequency power, just before underlayer silicon dioxide film is exposed frequency power is lowered |
10/27/1998 | US5827435 Plasma processing method and equipment used therefor |
10/20/1998 | US5824607 Plasma confinement for an inductively coupled plasma reactor |
10/20/1998 | US5824602 Helicon wave excitation to produce energetic electrons for manufacturing semiconductors |
10/14/1998 | EP0871211A2 Plasma treatment method and manufacturing method of semiconductor device |
10/14/1998 | EP0871200A2 Low temperature etch process utilizing power splitting between electrodes in an RF plasma reactor |
10/13/1998 | US5819434 Etch enhancement using an improved gas distribution plate |
10/07/1998 | EP0869546A1 Method for anisotropically etching tungsten using SF6, CHF3, and N2 |
10/07/1998 | EP0868836A1 Fluorine assisted stripping and residue removal in sapphire downstream plasma asher |