Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
03/1999
03/25/1999WO1999014789A1 Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil
03/24/1999EP0902962A1 Apparatus for plasma jet treatment of substrates
03/24/1999EP0902961A1 Method for treating articles with a plasma jet
03/24/1999CN1211831A Structuring method
03/23/1999US5886473 Surface wave plasma processing apparatus
03/23/1999US5885472 Method for detecting etching endpoint, and etching apparatus and etching system using the method thereof
03/17/1999EP0902461A2 Process for forming structures with high aspect ratio
03/17/1999EP0902456A2 Corrosion-resistant system and method for a plasma etching apparatus
03/17/1999EP0806128B1 Method of selectively removing a metallic layer from a non-metallic substrate
03/17/1999CN1211067A Method for producing structure with large ratio of height and width
03/11/1999WO1999012195A1 Dry etching method
03/09/1999US5880033 Method for etching metal silicide with high selectivity to polysilicon
03/09/1999US5879575 Self-cleaning plasma processing reactor
03/03/1999CN1209651A Structure formation method
03/03/1999CN1209645A High-speed deepth-variable etching method and apparatus thereof
02/1999
02/25/1999WO1999009587A2 Method of etching copper for semiconductor devices
02/24/1999CN1209201A Ultrasonic sputtering target testing method
02/23/1999US5874705 Method of and apparatus for microwave-plasma production
02/23/1999US5874363 Polycide etching with HCL and chlorine
02/23/1999US5874012 Plasma processing apparatus and plasma processing method
02/23/1999US5874011 Laser-induced etching of multilayer materials
02/16/1999US5872053 Forming electrical connections between levels of a semiconductor device.
02/09/1999US5869400 Method for dry-etching using gaseous bismuth halide compound
02/09/1999US5868897 Device and method for processing a plasma to alter the surface of a substrate using neutrals
02/09/1999US5868854 Method and apparatus for processing samples
02/09/1999US5868849 Surface processing device
02/09/1999US5868848 Plasma processing apparatus
02/03/1999EP0894154A1 RECOVERY OF Mo/Si MULTILAYER COATED OPTICAL SUBSTRATES
02/02/1999US5866485 Borophosphosilicate glass
02/02/1999US5866483 Method for anisotropically etching tungsten using SF6, CHF3, and N2
02/02/1999US5865938 Wafer chuck for inducing an electrical bias across wafer heterojunctions
02/02/1999US5865937 Broad-band adjustable power ratio phase-inverting plasma reactor
01/1999
01/28/1999WO1999004425A1 Method for detecting the transition of different materials in semiconductor structures
01/26/1999US5863841 Plasma diffusion control apparatus
01/21/1999WO1999003143A1 Patterned copper etch for micron and submicron features, using enhanced physical bombardment
01/19/1999US5861601 Microwave plasma processing apparatus and method
01/19/1999US5861103 Reactive ion etching producing semiconductor devices
01/19/1999US5861086 Method and apparatus for sputter etch conditioning a ceramic body
01/13/1999EP0889976A1 Showerhead for uniform distribution of process gas
01/13/1999CN1204864A Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
01/12/1999US5859501 Radio frequency generating systems and methods for forming pulse plasma using gradually pulsed time-modulated radio frequency power
01/12/1999US5858259 Plasma processing apparatus and method
01/12/1999US5858258 Plasma processing method
01/12/1999US5858162 Plasma processing apparatus
01/07/1999EP0889506A2 Etching process
01/07/1999EP0889359A2 Etching method for manufacture of a phase-shift mask
01/07/1999DE19728473A1 Layer structuring by dry etching process
01/05/1999US5855725 Vacuum processing system and method of removing film deposited on inner face of vacuum vessel in the vacuum processing system
01/05/1999US5855685 Plasma enhanced CVD apparatus, plasma enhanced processing apparatus and plasma enhanced CVD method
12/1998
12/30/1998EP0887836A2 Electronic device fabrication apparatus
12/30/1998EP0886880A1 Method and apparatus for the coating of workpieces
12/30/1998CN1203148A Micro structure and its manufacture method
12/29/1998US5854104 Process for fabricating nonvolatile semiconductor memory device having a ferroelectric capacitor
12/29/1998US5853602 Method of dry etching for patterning refractory metal layer improved in etching rate, anisotropy and selectivity to silicon oxide
12/29/1998US5853523 Plasma-etching electrode plate
12/29/1998US5853521 Multi-cathode electron beam plasma etcher
12/23/1998EP0886311A1 Method for manufacturing semiconductor components
12/23/1998EP0886310A2 Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
12/23/1998EP0886181A2 Micro structure and its manufacture method
12/23/1998EP0885981A2 Process and apparatus for treating substrates by means of ions produced by low voltage arc discharge
12/23/1998CN1202723A Method for manufacturing semiconductor device having metal silicide film
12/22/1998US5852328 Semiconductor device and method of manufacturing the same
12/16/1998EP0884760A2 Electron-beam excited plasma generator
12/15/1998US5849092 Process for chlorine trifluoride chamber cleaning
12/10/1998WO1998055293A1 Method of forming a silicon layer on a surface
12/10/1998CA2288757A1 Method of forming a silicon layer on a surface
12/09/1998EP0883159A2 Plasma processing apparatus
12/09/1998EP0882812A1 Method of manufacturing member for thin-film formation apparatus and the member for the apparatus
12/08/1998US5847454 Electrically isolated released microstructures
12/08/1998US5846886 Metal film etching method
12/08/1998US5846884 Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing
12/08/1998US5846849 Microstructure and single mask, single-crystal process for fabrication thereof
12/08/1998US5846441 Method for forming a patterned metallic layer in a thin film magnetic head
12/08/1998US5846331 Plasma processing apparatus
12/02/1998EP0881662A1 Plasma processing apparatus and plasma processing method
12/02/1998EP0880694A1 Ultrasonic sputtering target testing method
12/02/1998EP0880369A2 Surface modification of medical implants
12/02/1998CN1200564A Mfg. method of semiconductor device
12/01/1998US5843848 Method of plasma etching
12/01/1998US5843289 Surface modification of medical implants
12/01/1998US5843277 Dry-etch of indium and tin oxides with C2H5I gas
11/1998
11/25/1998EP0880163A2 Plasma processing method and apparatus
11/24/1998US5840630 FBI etching enhanced with 1,2 di-iodo-ethane
11/19/1998DE19730644C1 Detecting material transition in semiconductor structure
11/17/1998US5837617 Heterojunction compound semiconductor device and method of manufacturing the same
11/17/1998US5837093 Apparatus for performing plain etching treatment
11/10/1998US5835315 Wafer including scribe line grooves for separating thin film heads and process for making the same
11/03/1998US5830807 Successive dry etching of alternating laminate
11/03/1998US5830376 Topographical selective patterns
11/03/1998US5830310 Apparatus and method for detecting end point of post treatment
10/1998
10/28/1998EP0874251A2 Process for fabricating a device having a hole at an extremity
10/27/1998US5827436 Boron trichloride, chlorine etching gases and an inert gas are used in first step of etching aluminum alloy film using high frequency power, just before underlayer silicon dioxide film is exposed frequency power is lowered
10/27/1998US5827435 Plasma processing method and equipment used therefor
10/20/1998US5824607 Plasma confinement for an inductively coupled plasma reactor
10/20/1998US5824602 Helicon wave excitation to produce energetic electrons for manufacturing semiconductors
10/14/1998EP0871211A2 Plasma treatment method and manufacturing method of semiconductor device
10/14/1998EP0871200A2 Low temperature etch process utilizing power splitting between electrodes in an RF plasma reactor
10/13/1998US5819434 Etch enhancement using an improved gas distribution plate
10/07/1998EP0869546A1 Method for anisotropically etching tungsten using SF6, CHF3, and N2
10/07/1998EP0868836A1 Fluorine assisted stripping and residue removal in sapphire downstream plasma asher
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