Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
10/2000
10/04/2000CN1268922A Method for forming a silicon layer on a surface
10/03/2000US6127273 Process for anisotropic plasma etching of different substrates
10/03/2000US6127271 Process for dry etching and vacuum treatment reactor
10/03/2000US6125788 Plasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter
09/2000
09/27/2000CN1267905A Dry etching method
09/26/2000US6124211 Cleaning method
09/26/2000CA2182247C Apparatus and method for treatment of substrate surface using plasma focused below orifice leading from chamber into substrate containing area
09/20/2000EP1036210A1 Apparatus for surface modification of polymer, metal and ceramic materials using ion beam
09/13/2000EP1035757A1 Substrate electrode plasma generator and substance/material processing method
09/13/2000EP1035570A2 Dry etching method
09/13/2000CN1266463A Method and apparatus for treating metal surfaces by dry process
09/12/2000US6118122 Ion beam working apparatus
08/2000
08/30/2000EP0586579B1 Microwave plasma processing device
08/29/2000US6109208 Plasma generating apparatus with multiple microwave introducing means
08/24/2000WO2000049651A1 Improved masking methods and etching sequences for patterning electrodes of high density ram capacitors
08/24/2000WO2000049650A1 Iridium etching methods for anisotrophic profile
08/24/2000WO2000049203A1 Method for processing metallic parts with an electric arc and apparatus for realising the same
08/24/2000WO2000049202A2 Improved etching methods for anisotropic platinum profile
08/23/2000EP0748518B1 Method of etching conductive lines without undercutting
08/22/2000US6105534 Apparatus for plasma jet treatment of substrates
08/17/2000DE19904305A1 Convex structure formation involves changing etching removal rate of base material as function of etching time depending on base material
08/16/2000EP0730532B1 Topology induced plasma enhancement for etched uniformity improvement
08/15/2000US6104487 Plasma etching with fast endpoint detector
08/15/2000US6103630 Adding SF6 gas to improve metal undercut for hardmask metal etching
08/15/2000US6103318 Physical deposition, e.g. evaporation, of a mask layer of silicon on a silica substrate, the mask having a thickness of >1 mu m; bombarding the mask layer with ions while depositing to reduce a compressive or tensile stress; etching
08/15/2000US6101970 Plasma processing apparatus
08/08/2000US6099687 Etching system
08/01/2000US6096232 Dry etching system and dry etching method using plasma
08/01/2000US6096161 Dry etching apparatus having means for preventing micro-arcing
08/01/2000US6096160 Helicon wave plasma processing apparatus
07/2000
07/27/2000WO2000044037A1 Method of in-situ etching a hard mask and a metal layer in a single etcher
07/27/2000DE19901002A1 Verfahren zum Strukturieren einer Schicht A method for patterning a layer
07/25/2000US6092786 Gate valve
07/20/2000WO2000042646A1 Method for structuring a layer
07/19/2000CN1054656C Method of cleaning vacuum processing apparatus
07/18/2000US6090719 Dry etching method for multilayer film
07/18/2000US6090718 Dry etching method for semiconductor substrate
07/18/2000US6090210 Multi-zone gas flow control in a process chamber
07/18/2000US6089472 Shower head
07/18/2000US6089181 Plasma processing apparatus
07/12/2000EP0782483B1 Selective removal of material by irradiation
07/11/2000US6088096 End-point detector for plasma etcher
07/11/2000US6087265 Method for removing redeposited veils from etched platinum
07/11/2000US6086777 Tantalum barrier metal removal by using CF4 /o2 plasma dry etch
07/06/2000WO2000038935A1 Local vectorial particle cleaning
07/05/2000EP0902961B1 Method for treating articles with a plasma jet
07/04/2000US6084356 Plasma processing apparatus with a dielectric body in the waveguide
07/04/2000US6083413 Hydrosilation; using halogen compound and organosilicon compound
07/04/2000US6083412 Plasma etch apparatus with heated scavenging surfaces
07/04/2000US6082374 Fluorine assisted stripping and residue removal in sapphire downstream plasma asher
07/04/2000US6082295 Plasma etching chamber for manufacturing semiconductor devices
07/04/2000US6082293 Plasma source
06/2000
06/27/2000US6080679 High-speed soft evacuation process and system
06/27/2000US6080271 Plasma source for generating inductively coupled, plate-shaped plasma, having magnetically permeable core
06/27/2000US6079357 Plasma processing apparatus
06/20/2000US6077788 Method and apparatus for processing samples
06/20/2000US6077787 Method for radiofrequency wave etching
06/20/2000US6077777 Method for forming wires of semiconductor device
06/20/2000US6077450 Method for etching platinum
06/20/2000US6076483 Plasma processing apparatus using a partition panel
06/13/2000US6074519 Plasma etching apparatus having a sealing member coupling an upper electrode to an etching chamber
06/13/2000US6073636 Dry etcher apparatus and method of preventing residual reaction gas from condensing on wafers after etching
06/08/2000WO2000033370A1 Dry etching
06/08/2000WO1999067443A9 Methods for etching an aluminum-containing layer
06/07/2000EP1006761A1 Plasma processor
06/06/2000US6072147 Plasma processing system
06/06/2000US6071829 Method of fabricating semiconductor components
06/06/2000US6070552 Substrate processing apparatus
05/2000
05/31/2000EP1004136A1 Plasma processing apparatus
05/30/2000US6069092 Etching silicon dioxide surface within heated chemical reactor using fluorohydrocarbon plasma generated by applying a radio frequency power to the lower electrode supporting the substrate
05/30/2000US6069035 Techniques for etching a transition metal-containing layer
05/25/2000WO2000029640A1 Method for residue-free anisotropic etching of aluminum and its alloys
05/24/2000EP0832407A4 Passive gas substrate thermal conditioning apparatus and method
05/16/2000US6063236 Vacuum processing system and method of removing film deposited on inner face of vacuum vessel in the vacuum processing system
05/10/2000EP0999472A2 Method and apparatus for dry-etching half-tone phase-shift films, half-tone phase-shift photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereof
05/09/2000US6060836 Plasma generating apparatus and ion source using the same
05/03/2000EP0996974A1 Patterned copper etch for micron and submicron features, using enhanced physical bombardment
05/03/2000EP0996770A1 Method and apparatus for treating metal surfaces by dry process
04/2000
04/27/2000WO2000024048A1 Method of etching patterned layers useful as masking during subsequent etching or for damascene structures
04/27/2000WO2000024046A1 Plasma etching method
04/25/2000US6054391 Masking with titanium
04/25/2000US6054013 Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
04/18/2000US6051866 Microstructures and single mask, single-crystal process for fabrication thereof
04/18/2000US6051150 Plasma etching method and method of manufacturing liquid crystal display panel
04/11/2000US6049661 Method of simulating shape of sample after surface reaction processing, apparatus and recording medium
04/06/2000WO2000019491A1 Method for cleaning a process chamber
04/06/2000WO2000019483A1 Vacuum treatment chamber and method for treating surfaces
04/04/2000US6046546 Stabilizer for switch-mode powered RF plasma
04/04/2000US6046500 Method of controlling the spread of an adhesive on a circuitized organic substrate
04/04/2000US6045667 Process and system for the treatment of substrates using ions from a low-voltage arc discharge
04/04/2000US6045665 Efficiently prevents peeling of deposits formed on the surface of the inner walls of the thin-film formation apparatus and suppresses particle production without contaminating the inside of the thin-film forming device
04/04/2000US6045618 Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
04/04/2000US6044850 Forming photoresist ad wiring
04/04/2000US6044534 Semiconductor device manufacturing machine and method for manufacturing a semiconductor device by using the same manufacturing machine
03/2000
03/30/2000WO2000018198A1 Substrate electrode plasma generator and substance/material processing method
03/29/2000EP0989595A2 Device for processing a surface of a substrate
03/28/2000US6043608 Plasma processing apparatus
03/28/2000US6041733 Plasma processing apparatus protected from discharges in association with secondary potentials
03/28/2000CA2030936C Liquid jet removal of plasma sprayed and sintered coatings
03/22/2000EP0986461A1 Method of forming a silicon layer on a surface
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