C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or

Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
12/2002
12/10/2002	US6491832 Method for processing specimens
12/10/2002	US6490994 Plasma processing apparatus
12/05/2002	US20020179569 Etching a boron trichloride plasma
12/04/2002	CN1383202A Conductor pattern formed by magnetic force
12/03/2002	US6489247 Copper etch using HCl and HBR chemistry
12/03/2002	US6488862 Etched patterned copper features free from etch process residue
11/2002
11/28/2002	WO2001096955A3 A method and apparatus for etching metal layers on substrates
11/27/2002	EP1259979A2 Method of etching a shaped cavity
11/27/2002	CN1381880A Outline-control method for etching metal layer
11/26/2002	US6486073 Method for stripping a photo resist on an aluminum alloy
11/19/2002	US6482746 Computer readable medium for controlling a method of cleaning a process chamber
11/19/2002	US6482745 Etching methods for anisotropic platinum profile
11/14/2002	WO2002091445A1 Coating agent, plasma-resistant component having coating film formed by the coating agent, plasma processing device provided with the plasma-resistant component
11/14/2002	US20020168825 Method for etching metal layer on a scale of nanometers
11/07/2002	WO2002089531A1 Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
11/05/2002	US6475918 Plasma treatment apparatus and plasma treatment method
11/05/2002	US6475335 RF plasma reactor with hybrid conductor and multi-radius dome ceiling
11/05/2002	EP1047563A4 Surface modification of medical implants
10/2002
10/31/2002	WO2002086937A1 Dipole ion source
10/31/2002	WO2002086932A1 Magnetic mirror plasma source
10/31/2002	WO2002086192A1 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
10/31/2002	WO2002086185A1 Penning discharge plasma source
10/31/2002	WO2002029848A3 Wafer area pressure control for plasma confinement
10/31/2002	US20020158044 Magnetically patterning conductors
10/31/2002	US20020157793 Toroidal plasma source for plasma processing
10/29/2002	US6472329 Etching aluminum over refractory metal with successive plasmas
10/29/2002	US6471821 Plasma reactor and method
10/24/2002	US20020153349 Plasma processing method and apparatus
10/24/2002	US20020153242 Method of manufacturing an object in a vacuum recipient
10/24/2002	US20020153104 Plasma etching chamber and method for manufacturing photomask using the same
10/22/2002	US6468916 Etching polymer layer
10/17/2002	US20020148812 Method and apparatus for performing plasma process on particles
10/17/2002	US20020148810 Method for surface treatment of silicon based substrate
10/16/2002	EP0928499B1 Method for detecting the transition of different materials when etching semiconductor structures
10/16/2002	CN1092717C Constraining apparatus for constraining discharge in interaction space
10/15/2002	US6465051 Cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas and applying rf energy to a ceiling electrode in the chamber while not necessarily applying rf energy to the coil antenna
10/15/2002	US6464889 Surface modification of medical implants
10/10/2002	WO2002080248A1 Plasma processing device
10/08/2002	US6461974 High temperature tungsten etching process
10/08/2002	US6461968 Method for fabricating a semiconductor device
10/03/2002	US20020139774 Plasma heating of a substrate with subsequent high temperature etching
10/03/2002	US20020139772 Adaptive GCIB for smoothing surfaces
10/03/2002	US20020139665 Plasma etch reactor and method
09/2002
09/26/2002	US20020137352 Selectively delignifying lignocellulosic materials and bleaching of pulp and dyes using a combination of an oxidative enzyme and a metal complex
09/24/2002	US6454987 Micro structure and its manufacture method
09/24/2002	US6454957 Ruthenium and ruthenium dioxide removal method and material
09/19/2002	US20020132488 Method of etching tantalum
09/19/2002	US20020129900 Method for processing specimens, an apparatus therefor and a method of manufacture of a magnetic head
09/17/2002	US6451214 Etching, shaping, or patterning layers or films with ceric ammonium nitrate in fabrication of semiconductor systems
09/12/2002	US20020125214 Silver stain removal by chemical etching and sonication
09/12/2002	US20020125207 Plasma processing method
09/12/2002	US20020125206 Depositing metal film including an aluminum over a semiconductor substrate, and etching the metal film with a plasma of a gas mixture containing chlorine, boron trichloride and dichloromethane
09/11/2002	EP1239511A1 RF plasma processor
09/11/2002	EP1238419A1 Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
09/11/2002	CN1090816C Treatment unit of gas heat-transfer plasma
09/10/2002	US6448094 Method of detecting etching depth
09/10/2002	US6447691 Method for detecting end point of plasma etching, and plasma etching apparatus
09/10/2002	US6446573 Plasma process device
09/06/2002	WO2002031858A3 Gas distribution apparatus for semiconductor processing
09/05/2002	US20020123200 Plasma processing apparatus
09/03/2002	US6444587 Plasma etching microelectronic layer on substrate within plasma reactor chamber, transferring substrate to load lock chamber integral with plasma reactor chamber, purging load lock chamber with inert gas, removing substrate from chamber
09/03/2002	US6444085 Plasma gases generators cells having semiconductors ceillings and side walls connected to power sources, supports and coils
08/2002
08/29/2002	US20020119670 Plasma etching apparatus and plasma etching method
08/29/2002	US20020119667 Dry etching method
08/29/2002	US20020117473 Capable of becoming rare earth hydroxide in reaction with water vapor; noncracking, nonswelling, nonchipping; disk drives
08/29/2002	US20020117471 Method of plasma heating and etching a substrate
08/27/2002	US6440870 Accuracy control of etching using plasma
08/27/2002	US6440865 Metal layer with an antireflection layer
08/22/2002	WO2002065539A1 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
08/22/2002	US20020113035 Method for forming hole pattern
08/22/2002	DE10104614A1 Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung Plasma system and method for generating a functional coating
08/21/2002	EP1232877A1 Cleaning method for recycling a printing substrate by laser ablation
08/20/2002	US6436304 Plasma processing method
08/14/2002	CN1363719A Treatment of plasma
08/14/2002	CN1363718A Processing apparatus for plasma
08/13/2002	US6433297 Plasma processing method and plasma processing apparatus
08/13/2002	US6432317 Method to produce masking
08/13/2002	US6432261 Plasma etching system
08/13/2002	US6432208 Plasma processing apparatus
08/08/2002	WO2002062114A1 Plasma unit and method for generation of a functional coating
08/08/2002	WO2002027755A3 Chamber configuration for confining a plasma
08/08/2002	US20020104832 Plasma processing apparatus and method
08/06/2002	US6429399 Discharge tube for a local etching apparatus and a local etching apparatus using the discharge tube
08/01/2002	WO2002059882A2 Method for seed layer removal for magnetic heads
07/2002
07/30/2002	US6426302 Useful for continuously producing negative ions in high density and also negative ions can be made incident on the semiconductor substrate to be processed to conduct ashing, etching and cleaning of the substrate to remove impurities
07/25/2002	US20020096493 Dry etching method, microfabrication process and dry etching mask
07/24/2002	EP1225621A1 Method of etching
07/23/2002	US6423644 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
07/23/2002	US6423383 Converting reactive carbon compounds into a gas plasma by resonance using microwaves and magnetic fields, then coating amorphous carbon films on substrates
07/23/2002	US6423177 Apparatus for performing plasma process on particles
07/18/2002	US20020094694 Bombarding in a vacuum a portion of the substrate with a focused particle beam from a particle source, and exposing the substrate to an organic chloride or hydroxide
07/18/2002	US20020093762 Method for seed layer removal for magnetic heads
07/16/2002	US6419995 Treating homogeneously at least a portion of the surface of the material in web form, which is moved over a pair of rolls, with an atmospheric plasma generated by an indirect plasmatron
07/16/2002	US6419845 Overcoating with alumina dielectric; masking
07/16/2002	US6419752 Structuring device for processing a substrate
07/16/2002	US6418941 Method of and apparatus for plasma cleaning of chip-mounted board
07/16/2002	US6418874 Toroidal plasma source for plasma processing
07/10/2002	CN1358327A Method and apparatus for etching gold metal layer using titanium hardmask
07/04/2002	US20020084255 Plasma processing method
07/04/2002	US20020084034 Dry etching apparatus and a method of manufacturing a semiconductor device

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