Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
06/2002
06/27/2002US20020079057 For etching a specimen laminated on substrate having two or more layers, at least one of which comprises nickel iron or nickel iron cobalt alloy, at below 200 degrees C, rinsing and drying units
06/25/2002US6409891 Low energy plasma cleaning method for cryofilms
06/20/2002WO2002026400A8 Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium
06/20/2002US20020076936 Method of fabricating semiconductor integrated circuit device and the semiconductor integrated circuit device
06/20/2002US20020074313 Carbon-doped hard mask and method of passivating structures during semiconductor device fabrication
06/19/2002EP1215717A1 Magnetron plasma processing apparatus
06/18/2002US6407004 Patterning connector electrode on magnetoresistive substrate
06/13/2002WO2002046483A2 Silver stain removal from dna detection chips by cyanide etching or sonication
06/11/2002US6404134 Plasma processing system
06/11/2002US6402885 Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma
06/06/2002US20020066537 Plasma reactor
06/05/2002EP0889976B1 Apparatus for uniform distribution of plasma
06/04/2002US6399507 Stable plasma process for etching of films
05/2002
05/30/2002WO2001059804A3 Device and method for coupling two circuit components which have different impedances
05/28/2002US6395347 Vapor spraying
05/28/2002US6395157 Method and apparatus for sputter etch conditioning a ceramic body
05/23/2002DE10056162A1 Process for anisotropically etching thin metal foils, e.g. silver foils, comprises repeatedly etching using an oxidizing plasma or reactive gas in a first step as etching component
05/21/2002US6392350 Plasma processing method
05/21/2002US6391789 Dry etching system for patterning target layer at high reproducibility and method of dry etching used therein
05/21/2002US6390018 Microwave plasma treatment apparatus
05/16/2002US20020056829 Ruthenium and ruthenium dioxide removal method and material
05/16/2002US20020056701 Etching, shaping, or patterning layer or films with ceric ammonium nitrate in fabrication of semiconductor systems
05/16/2002US20020056697 Ruthenium and ruthenium dioxide removal method and material
05/15/2002EP1205967A2 Method for water vapour enhanced ion-beam machining
05/14/2002US6387208 Inductive coupling plasma processing apparatus
05/08/2002EP1204134A2 RF plasma processor
05/07/2002US6383942 Dry etching method
05/07/2002US6383938 Method of anisotropic etching of substrates
05/07/2002US6383333 Protective member for inner surface of chamber and plasma processing apparatus
05/07/2002US6382895 Substrate processing apparatus
05/02/2002WO2000049651A9 Improved masking methods and etching sequences for patterning electrodes of high density ram capacitors
05/02/2002EP1200980A1 Adaptive gas cluster ion beam for smoothing surfaces
04/2002
04/30/2002US6380684 Plasma generating apparatus and semiconductor manufacturing method
04/30/2002US6380094 Method for preventing redeposition of etching products onto substrate surfaces during a tungsten re-etching process in the production of LSI circuits
04/30/2002US6379986 Anodizing a bulk aluminum material and then forming a tunnel oxidation film by irradiating oxygen
04/25/2002US20020047541 Plasma processsing method and apparatus thereof
04/23/2002US6377149 Magnetic field generator for magnetron plasma generation
04/23/2002US6376977 Silicon electrode plate
04/23/2002US6376833 Projection having a micro-aperture, probe or multi-probe having such a projection and surface scanner, aligner or information processor comprising such a probe
04/23/2002US6376383 Method for etching silicon layer
04/23/2002US6375790 Adaptive GCIB for smoothing surfaces
04/23/2002US6374832 Performing a dry cleaning process in the etching chamber with oxygen/hydrogen bromide plasma to restore an etching environment in the etching chamber, wherein the etching chamber is free of wafers
04/18/2002WO2002031858A2 Gas distribution apparatus for semiconductor processing
04/18/2002WO2002012585A3 Processing apparatus and cleaning method
04/18/2002US20020045354 Acid resistance glass; smooth surface
04/18/2002US20020043340 Apparatus for processing samples
04/18/2002US20020043339 Apparatus for processing samples
04/18/2002US20020043338 Plasma etching apparatus and plasma etching method
04/16/2002US6372654 Apparatus for fabricating a semiconductor device and method of doing the same
04/11/2002WO2002029848A2 Wafer area pressure control for plasma confinement
04/11/2002WO2002005317A3 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
04/11/2002US20020042206 Plasma etching apparatus and plasma etching method
04/11/2002US20020042205 Gas distribution apparatus for semiconductor processing
04/11/2002US20020042204 Plasma processing apparatus with reduced parasitic capacity and loss in RF power
04/11/2002US20020040766 Etching silicon oxide with fluorohydrocarbon or fluorine; controlling temperature
04/09/2002US6368519 Etching method and a method of manufacturing a magnetic head
04/09/2002US6368518 Using halogen gas
04/09/2002US6368452 Plasma treatment apparatus and method of semiconductor processing
04/04/2002WO2002027755A2 Chamber configuration for confining a plasma
04/04/2002WO2002026400A1 Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium
04/04/2002US20020038691 Plasma processing system
04/04/2002US20020038681 Thin magnetic alloy film; tungsten, hafnium, zirconium, tantalanum alloy
03/2002
03/28/2002WO2002025697A2 Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto
03/28/2002US20020037647 Heating; plasma etching
03/28/2002DE10054969A1 Method for structuring metal layers by lithography and subsequent plasma etching comprises applying the required antireflection layer as a dielectric layer before the reactive ion etching of the uppermost metal layer of several metal layers
03/21/2002US20020033229 Apparatus for etching semiconductor samples and a source for providing a gas by sublimination thereto
03/19/2002US6358361 Plasma processor
03/14/2002US20020029745 Worktable device and plasma processing apparatus for semiconductor process
03/14/2002DE10042098A1 Gasversorgung für Additive Lithographie Gas supply for additives lithography
03/13/2002EP1187187A1 Plasma processing apparatus
03/13/2002EP0886880B1 Method and apparatus for the coating of workpieces
03/12/2002US6355573 Plasma processing method and apparatus
03/12/2002US6354240 Plasma etch reactor having a plurality of magnets
03/07/2002WO2002019375A1 Device, set and method for carrying a gas or a liquid to a surface through a tube
03/07/2002WO2001061750A3 Method of etching a shaped cavity
03/07/2002US20020028582 Accuracy control of etching using plasma
03/07/2002US20020028359 Dry etching method, microfabrication process and dry etching mask
03/06/2002EP1183722A1 Apparatus and method for reducing differential sputter rates
03/06/2002EP1183684A2 Reactive ion beam etching method and a thin film head fabricated using the method
03/06/2002EP0631711B1 System for characterizing ac properties of a processing plasma
03/06/2002CN1080456C High speed ashing method
03/05/2002US6353206 Plasma system with a balanced source
02/2002
02/28/2002US20020025677 Dry etching method and apparatus
02/28/2002US20020025387 Process for the surface activation of materials
02/28/2002US20020024678 End point detector for etching equipment
02/28/2002US20020023896 Plasma etching method and apparatus
02/28/2002US20020023720 Apparatus for processing samples
02/26/2002US6350701 Etching system
02/26/2002US6350699 Method for anisotropic plasma etching using non-chlorofluorocarbon, fluorine-based chemistry
02/21/2002US20020020499 Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor
02/21/2002US20020020498 Plasma processing apparatus and plasma processing method
02/21/2002US20020020494 Plasma processing system and method
02/19/2002US6348689 Focused ion beam apparatus
02/19/2002US6348158 Electron beam is injected into a plasma to a control an electron energy distribution; semiconductor etching
02/14/2002WO2002013249A1 Radial antenna and plasma processing apparatus comprising the same
02/14/2002WO2002012591A1 Method and device for plasma treatment of moving metal substrates
02/14/2002WO2002012585A2 Processing apparatus and cleaning method
02/14/2002CA2423138A1 Method and device for plasma treatment of moving metal substrates
02/13/2002EP1179854A1 Heterojunction compound semiconductor device
02/13/2002EP1179835A2 Improved slit valve door and method of assembling
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