Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769) |
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04/04/2001 | CN1064177C High-speed deepth-variable etching method and apparatus thereof |
04/03/2001 | US6211535 Method of manufacturing a semiconductor device |
04/03/2001 | US6210595 Method for producing structures having a high aspect ratio and structure having a high aspect ratio |
03/28/2001 | EP1087421A2 Method and apparatus for providing a stable plasma |
03/27/2001 | US6207008 Detecting intensity of light emission; calibration |
03/27/2001 | US6207007 Plasma processing system |
03/22/2001 | WO2001020655A1 Method of plasma etching thin films of difficult to dry etch materials |
03/21/2001 | CN1288584A Plasma treatment for producing electron emitter |
03/20/2001 | US6204170 Method for manufacturing semiconductor device having metal silicide film and metal film in which metal film can be selectively removed |
03/15/2001 | WO2001018858A1 Magnetron plasma processing apparatus |
03/13/2001 | US6200822 Method for detecting the transition between different materials in semiconductor structures |
03/13/2001 | US6199505 Plasma processing apparatus |
03/13/2001 | US6199276 Method for removing a dense ceramic thermal barrier coating from a surface |
03/07/2001 | EP1081749A1 Protective member for inner surface of chamber and plasma processing apparatus |
03/07/2001 | CN1286892A Substrate electrode plasma generator and substance/material processing method |
03/06/2001 | US6199029 Topography simulation method and system of plasma-assisted etching process |
03/06/2001 | US6198601 Thin film magnetic head having non-linear tapered rails |
03/06/2001 | US6198067 Plasma processing device for circuit supports |
03/06/2001 | US6197699 In situ dry cleaning process for poly gate etch |
03/06/2001 | US6196155 Plasma processing apparatus and method of cleaning the apparatus |
03/01/2001 | WO2001015213A1 Method of etching |
02/28/2001 | EP1079423A1 Apparatus for gas processing |
02/28/2001 | EP1079004A2 Aluminium-neodymium etch process with hydrogen iodide |
02/28/2001 | CN1062673C Magnetic recording disk for contact recording |
02/27/2001 | US6194680 Microwave plasma processing method |
02/27/2001 | US6193836 Center gas feed apparatus for a high density plasma reactor |
02/27/2001 | US6192898 Method and apparatus for cleaning a chamber |
02/21/2001 | EP1077481A2 Etching aluminium over refractory metal with successive plasmas |
02/21/2001 | EP1076730A1 A method of etching an opening |
02/20/2001 | US6190495 Magnetron plasma processing apparatus |
02/14/2001 | EP1076114A1 Method for removing a dense ceramic thermal barrier coating from a surface |
02/13/2001 | US6187686 High degree of etching selectivity between the platinum layer and the mask layer can thus be achieved thereby reducing sidewall erosion and residue generation. |
02/13/2001 | US6186153 A dry cleaning method to remove film deposits adhering to the inner walls of a semiconductor manufacturing apparatus that result from etching or ion sputtering residue using a two-step plasma treatment using gases of different reactivity |
02/06/2001 | US6184625 Ion beam processing apparatus for processing work piece with ion beam being neutralized uniformly |
02/06/2001 | US6184148 Forming on semiconductor substrate having insulation layer, layer of aluminum copper alloy; forming resist pattern on aluminum alloy layer; etching exposed layer; downstream ashing resist pattern; removing residual chlorine component |
02/06/2001 | US6183940 Method of retaining the integrity of a photoresist pattern |
02/06/2001 | US6183566 UV/halogen metals removal process |
01/31/2001 | CN1282107A Wiring and its making method including the described wired semiconductor device and dry etching process |
01/31/2001 | CN1061387C Method for forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cattodes |
01/30/2001 | US6179955 Dry etching apparatus for manufacturing semiconductor devices |
01/25/2001 | WO2001006538A1 Adaptive gcib for smoothing surfaces |
01/24/2001 | EP1071124A2 Dry etching method for forming tungsten wiring in a semiconductor device |
01/24/2001 | EP1071113A2 Plasma reactors for processing semiconductor wafers |
01/23/2001 | US6177354 Method of etching a substrate |
01/23/2001 | US6177147 Process and apparatus for treating a substrate |
01/23/2001 | US6176979 At least two surfaces of electro-conductive material are exposed to the vacuum atmosphere atlest one being inpart covered with a material of lower electroconductivity than the material of surface |
01/23/2001 | US6176967 Reactive ion etch chamber wafer masking system |
01/17/2001 | CN1280631A Apparatus for surface modification of polymer, metal and ceramic materials using ion bean |
01/16/2001 | US6174499 A semiconductor etching apparatus comprising a generator for generating a plasma in the reaction chamber to decompose and chemically activate the freon gas, then made into contact with a reactant to form a reaction product |
01/09/2001 | US6171956 Method for improving the thermal conductivity of metal lines in integrated circuits |
01/09/2001 | US6171662 Method of surface processing |
01/09/2001 | US6171438 Plasma processing apparatus and plasma processing method |
01/04/2001 | WO2001001473A1 A method and apparatus for etching a gold metal layer using a titanium hardmask |
01/03/2001 | EP0828618A4 Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure |
01/02/2001 | US6167835 Two chamber plasma processing apparatus |
01/02/2001 | US6167834 Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
12/28/2000 | WO2000049202A3 Improved etching methods for anisotropic platinum profile |
12/27/2000 | EP1063691A2 A dry-etching method and an equipment for dry-etching |
12/27/2000 | EP1062694A1 Process for copper etch back |
12/26/2000 | US6165376 Work surface treatment method and work surface treatment apparatus |
12/26/2000 | US6165311 Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
12/20/2000 | EP0737256B1 Microwave plasma reactor |
12/19/2000 | US6162323 Plasma processing apparatus |
12/12/2000 | US6159863 Insitu hardmask and metal etch in a single etcher |
12/12/2000 | US6159413 Micro structure and its manufacture method |
12/12/2000 | US6159388 Plasma etching method and plasma etching system for carrying out the same |
12/12/2000 | US6159332 System for etching polysilicon in fabricating semiconductor device |
12/12/2000 | US6159297 Semiconductor process chamber and processing method |
12/05/2000 | US6156666 Etching nickel film on substrate by plasma gas generated by ethching gas containing carbon monoxide and/or carbondioxide, cooling while substrate is being etched |
11/30/2000 | DE19923018A1 Plasma treatment apparatus, for strip materials or linked individual flat substrates, comprises a screened rectangular passage with a wound internal conductor enclosing a moving workpiece |
11/28/2000 | US6153897 Heterojunction compound semiconductor device and method of manufacturing the same |
11/22/2000 | EP1054438A2 System and method for cleaning silicon-coated surfaces in an ion implanter |
11/21/2000 | US6149783 Vacuum treatment apparatus |
11/21/2000 | US6148762 Plasma processing apparatus |
11/15/2000 | EP1052689A1 Method for anisotropic etching of copper thin films with a beta-diketone, a beta-ketoimine, or a breakdown product thereof |
11/14/2000 | US6146797 Focused ion beam lithography method with sample inspection through oblique angle tilt |
11/14/2000 | US6146542 Using fluorine, chlorine, and bromine gases |
11/14/2000 | US6146492 Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning method |
11/14/2000 | US6145469 Plasma processing apparatus and processing method |
11/09/2000 | WO2000029640A9 Method for residue-free anisotropic etching of aluminum and its alloys |
11/07/2000 | US6143192 Contacting at least a region of a surface of the ruthenium metal structure or a layer of ruthenium oxide layer with a solution comprising ceric ammonium nitrate |
11/07/2000 | US6143191 Contacting iridium-based material with xenon fluoride etching reagent for sufficient time to etch the deposited iridium-based material from the substrate |
11/07/2000 | US6143129 Inductive plasma reactor |
11/07/2000 | US6142096 Electronic device manufacturing apparatus and method for manufacturing electronic device |
11/02/2000 | EP1048064A1 Etching methods for anisotropic platinum profile |
11/02/2000 | EP1047563A1 Surface modification of medical implants |
10/31/2000 | US6140655 Method for water vapor enhanced charged-particle-beam machining |
10/26/2000 | WO2000063955A1 Plasma processing apparatus |
10/25/2000 | EP1047122A2 Method of anisotropic etching of substrates |
10/25/2000 | EP1046186A1 Plasma treatment for producing electron emitters |
10/24/2000 | US6136722 Selectively etching silicon dioxide film through a window of masking film using a fluorocarbon-based etching gas and forming a fluorocarbon polymer film on the masking film |
10/24/2000 | US6136213 Gas polishing method |
10/11/2000 | EP1043424A1 Method for locally removing oxidation and corrosion product from the surface of turbine engine components |
10/10/2000 | US6129046 Substrate processing apparatus |
10/05/2000 | WO2000059024A1 Improved techniques for etching an aluminum neodymium-containing layer |
10/05/2000 | WO2000059018A1 Plasma processing system |
10/05/2000 | WO2000058992A1 Plasma processing method and apparatus with control of rf bias |
10/05/2000 | WO2000058953A2 Reactive ion beam etching method and a thin film head fabricated using the method |
10/04/2000 | EP1041613A1 Etching process |
10/04/2000 | EP0711455B1 Shadow clamp |