Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
04/2001
04/04/2001CN1064177C High-speed deepth-variable etching method and apparatus thereof
04/03/2001US6211535 Method of manufacturing a semiconductor device
04/03/2001US6210595 Method for producing structures having a high aspect ratio and structure having a high aspect ratio
03/2001
03/28/2001EP1087421A2 Method and apparatus for providing a stable plasma
03/27/2001US6207008 Detecting intensity of light emission; calibration
03/27/2001US6207007 Plasma processing system
03/22/2001WO2001020655A1 Method of plasma etching thin films of difficult to dry etch materials
03/21/2001CN1288584A Plasma treatment for producing electron emitter
03/20/2001US6204170 Method for manufacturing semiconductor device having metal silicide film and metal film in which metal film can be selectively removed
03/15/2001WO2001018858A1 Magnetron plasma processing apparatus
03/13/2001US6200822 Method for detecting the transition between different materials in semiconductor structures
03/13/2001US6199505 Plasma processing apparatus
03/13/2001US6199276 Method for removing a dense ceramic thermal barrier coating from a surface
03/07/2001EP1081749A1 Protective member for inner surface of chamber and plasma processing apparatus
03/07/2001CN1286892A Substrate electrode plasma generator and substance/material processing method
03/06/2001US6199029 Topography simulation method and system of plasma-assisted etching process
03/06/2001US6198601 Thin film magnetic head having non-linear tapered rails
03/06/2001US6198067 Plasma processing device for circuit supports
03/06/2001US6197699 In situ dry cleaning process for poly gate etch
03/06/2001US6196155 Plasma processing apparatus and method of cleaning the apparatus
03/01/2001WO2001015213A1 Method of etching
02/2001
02/28/2001EP1079423A1 Apparatus for gas processing
02/28/2001EP1079004A2 Aluminium-neodymium etch process with hydrogen iodide
02/28/2001CN1062673C Magnetic recording disk for contact recording
02/27/2001US6194680 Microwave plasma processing method
02/27/2001US6193836 Center gas feed apparatus for a high density plasma reactor
02/27/2001US6192898 Method and apparatus for cleaning a chamber
02/21/2001EP1077481A2 Etching aluminium over refractory metal with successive plasmas
02/21/2001EP1076730A1 A method of etching an opening
02/20/2001US6190495 Magnetron plasma processing apparatus
02/14/2001EP1076114A1 Method for removing a dense ceramic thermal barrier coating from a surface
02/13/2001US6187686 High degree of etching selectivity between the platinum layer and the mask layer can thus be achieved thereby reducing sidewall erosion and residue generation.
02/13/2001US6186153 A dry cleaning method to remove film deposits adhering to the inner walls of a semiconductor manufacturing apparatus that result from etching or ion sputtering residue using a two-step plasma treatment using gases of different reactivity
02/06/2001US6184625 Ion beam processing apparatus for processing work piece with ion beam being neutralized uniformly
02/06/2001US6184148 Forming on semiconductor substrate having insulation layer, layer of aluminum copper alloy; forming resist pattern on aluminum alloy layer; etching exposed layer; downstream ashing resist pattern; removing residual chlorine component
02/06/2001US6183940 Method of retaining the integrity of a photoresist pattern
02/06/2001US6183566 UV/halogen metals removal process
01/2001
01/31/2001CN1282107A Wiring and its making method including the described wired semiconductor device and dry etching process
01/31/2001CN1061387C Method for forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cattodes
01/30/2001US6179955 Dry etching apparatus for manufacturing semiconductor devices
01/25/2001WO2001006538A1 Adaptive gcib for smoothing surfaces
01/24/2001EP1071124A2 Dry etching method for forming tungsten wiring in a semiconductor device
01/24/2001EP1071113A2 Plasma reactors for processing semiconductor wafers
01/23/2001US6177354 Method of etching a substrate
01/23/2001US6177147 Process and apparatus for treating a substrate
01/23/2001US6176979 At least two surfaces of electro-conductive material are exposed to the vacuum atmosphere atlest one being inpart covered with a material of lower electroconductivity than the material of surface
01/23/2001US6176967 Reactive ion etch chamber wafer masking system
01/17/2001CN1280631A Apparatus for surface modification of polymer, metal and ceramic materials using ion bean
01/16/2001US6174499 A semiconductor etching apparatus comprising a generator for generating a plasma in the reaction chamber to decompose and chemically activate the freon gas, then made into contact with a reactant to form a reaction product
01/09/2001US6171956 Method for improving the thermal conductivity of metal lines in integrated circuits
01/09/2001US6171662 Method of surface processing
01/09/2001US6171438 Plasma processing apparatus and plasma processing method
01/04/2001WO2001001473A1 A method and apparatus for etching a gold metal layer using a titanium hardmask
01/03/2001EP0828618A4 Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure
01/02/2001US6167835 Two chamber plasma processing apparatus
01/02/2001US6167834 Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
12/2000
12/28/2000WO2000049202A3 Improved etching methods for anisotropic platinum profile
12/27/2000EP1063691A2 A dry-etching method and an equipment for dry-etching
12/27/2000EP1062694A1 Process for copper etch back
12/26/2000US6165376 Work surface treatment method and work surface treatment apparatus
12/26/2000US6165311 Inductively coupled RF plasma reactor having an overhead solenoidal antenna
12/20/2000EP0737256B1 Microwave plasma reactor
12/19/2000US6162323 Plasma processing apparatus
12/12/2000US6159863 Insitu hardmask and metal etch in a single etcher
12/12/2000US6159413 Micro structure and its manufacture method
12/12/2000US6159388 Plasma etching method and plasma etching system for carrying out the same
12/12/2000US6159332 System for etching polysilicon in fabricating semiconductor device
12/12/2000US6159297 Semiconductor process chamber and processing method
12/05/2000US6156666 Etching nickel film on substrate by plasma gas generated by ethching gas containing carbon monoxide and/or carbondioxide, cooling while substrate is being etched
11/2000
11/30/2000DE19923018A1 Plasma treatment apparatus, for strip materials or linked individual flat substrates, comprises a screened rectangular passage with a wound internal conductor enclosing a moving workpiece
11/28/2000US6153897 Heterojunction compound semiconductor device and method of manufacturing the same
11/22/2000EP1054438A2 System and method for cleaning silicon-coated surfaces in an ion implanter
11/21/2000US6149783 Vacuum treatment apparatus
11/21/2000US6148762 Plasma processing apparatus
11/15/2000EP1052689A1 Method for anisotropic etching of copper thin films with a beta-diketone, a beta-ketoimine, or a breakdown product thereof
11/14/2000US6146797 Focused ion beam lithography method with sample inspection through oblique angle tilt
11/14/2000US6146542 Using fluorine, chlorine, and bromine gases
11/14/2000US6146492 Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning method
11/14/2000US6145469 Plasma processing apparatus and processing method
11/09/2000WO2000029640A9 Method for residue-free anisotropic etching of aluminum and its alloys
11/07/2000US6143192 Contacting at least a region of a surface of the ruthenium metal structure or a layer of ruthenium oxide layer with a solution comprising ceric ammonium nitrate
11/07/2000US6143191 Contacting iridium-based material with xenon fluoride etching reagent for sufficient time to etch the deposited iridium-based material from the substrate
11/07/2000US6143129 Inductive plasma reactor
11/07/2000US6142096 Electronic device manufacturing apparatus and method for manufacturing electronic device
11/02/2000EP1048064A1 Etching methods for anisotropic platinum profile
11/02/2000EP1047563A1 Surface modification of medical implants
10/2000
10/31/2000US6140655 Method for water vapor enhanced charged-particle-beam machining
10/26/2000WO2000063955A1 Plasma processing apparatus
10/25/2000EP1047122A2 Method of anisotropic etching of substrates
10/25/2000EP1046186A1 Plasma treatment for producing electron emitters
10/24/2000US6136722 Selectively etching silicon dioxide film through a window of masking film using a fluorocarbon-based etching gas and forming a fluorocarbon polymer film on the masking film
10/24/2000US6136213 Gas polishing method
10/11/2000EP1043424A1 Method for locally removing oxidation and corrosion product from the surface of turbine engine components
10/10/2000US6129046 Substrate processing apparatus
10/05/2000WO2000059024A1 Improved techniques for etching an aluminum neodymium-containing layer
10/05/2000WO2000059018A1 Plasma processing system
10/05/2000WO2000058992A1 Plasma processing method and apparatus with control of rf bias
10/05/2000WO2000058953A2 Reactive ion beam etching method and a thin film head fabricated using the method
10/04/2000EP1041613A1 Etching process
10/04/2000EP0711455B1 Shadow clamp
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