| Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769) |
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| 09/08/2001 | CA2339674A1 Process for the surface activation of materials |
| 09/07/2001 | CA2353490A1 Method and apparatus for low energy electron enhanced etching of substrates in an ac or dc plasma environment |
| 09/06/2001 | US20010019040 Discharge tube for a local etching apparatus and a local etching apparatus using the discharge tube |
| 09/06/2001 | US20010019036 Thin-film patterning method, manufacturing method of thin-film device and manufacturing method of thin-film magnetic head |
| 09/06/2001 | US20010019035 Patterning method using mask and manufacturing method for composite type thin film magnetic head using the patterning method |
| 09/06/2001 | US20010018951 Plasma processing apparatus and plasma processing method |
| 09/05/2001 | EP1130948A1 Inner-electrode plasma processing apparatus and method of plasma processing |
| 09/04/2001 | US6284146 Etching gas mixture for transition metal thin film and method for etching transition metal thin film using the same |
| 08/30/2001 | US20010017524 Plasma processing system |
| 08/30/2001 | US20010017205 Method of substrate temperature control and method of assessing substrate temperature controllability |
| 08/30/2001 | US20010017190 Apparatus of processing a sample surface and method thereof |
| 08/28/2001 | US6280895 Silicon or germanium with light receiver layers |
| 08/23/2001 | WO2001061750A2 Method of etching a shaped cavity |
| 08/22/2001 | EP1126532A2 Method of forming tunnel oxide film |
| 08/22/2001 | EP0951578B1 Precision etching and coating system |
| 08/21/2001 | US6277763 Controlled etching |
| 08/21/2001 | US6277762 Method for removing redeposited veils from etched platinum |
| 08/16/2001 | WO2001059804A2 Device and method for coupling two circuit components which have different impedances |
| 08/16/2001 | US20010014540 Inserting poultry litter into extruder, pushing through constrictions under pressure, grinding, heating through friction and pressure for predetermined time, forcing through tube having predetermined diameter, pelletizing |
| 08/14/2001 | US6273953 Piping system for etch equipment |
| 08/09/2001 | US20010011700 Method of forming a micro-aperture, projection having a micro-aperture, probe or multi-probe having such a projection and surface scanner, aligner or information processor comprising such a probe |
| 08/08/2001 | CN1069439C Surface treatment method and system |
| 08/07/2001 | US6270618 Plasma processing apparatus |
| 08/07/2001 | US6270617 RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
| 08/02/2001 | US20010010939 Method of detecting etching depth |
| 08/02/2001 | US20010010255 Dry etching endpoint detection system |
| 08/02/2001 | US20010010207 Plasma process apparatus |
| 07/31/2001 | US6268700 Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil |
| 07/26/2001 | US20010009249 Patterning the anti-reflection(AR) layer, the metal layer and the glue barrier(G/B) layer to result in a sloped sidewall of the metal layer which has a larger top surface adjacent the AR layer and smaller bottom surface adjacent the G/B layer |
| 07/26/2001 | US20010009248 Metal etching process |
| 07/25/2001 | EP1118105A1 Method for cleaning a process chamber |
| 07/25/2001 | EP1118095A1 Vacuum treatment chamber and method for treating surfaces |
| 07/25/2001 | CN1305221A Stripping method for metallic electrodes of semiconductor device |
| 07/24/2001 | USRE37294 Ion beam process for deposition of highly abrasion-resistant coatings |
| 07/24/2001 | US6265831 Plasma processing method and apparatus with control of rf bias |
| 07/24/2001 | US6265318 Heating the substrate to a temperature greater than about 150 degrees c., and etching the electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising chlorine, argon and bcl3, hbr, or hcl |
| 07/24/2001 | US6264852 Substrate process chamber and processing method |
| 07/19/2001 | US20010008805 Useful for continuously producing negative ions in high density and also negative ions can be made incident on the semiconductor substrate to be processed to conduct ashing, etching and cleaning of the substrate to remove impurities |
| 07/19/2001 | US20010008798 Plasma treatment system and method |
| 07/19/2001 | US20010008173 Plasma etching system |
| 07/19/2001 | US20010008124 Semiconductor substrate holding electrodes in groove; cooling gas |
| 07/17/2001 | US6261962 Method of surface treatment of semiconductor substrates |
| 07/11/2001 | EP1115140A2 Plasma processing apparatus |
| 07/11/2001 | EP1114791A2 Method of forming structure having surface roughness due to nano-sized surface features |
| 07/10/2001 | US6259209 Plasma processing apparatus with coils in dielectric windows |
| 07/10/2001 | US6259105 System and method for cleaning silicon-coated surfaces in an ion implanter |
| 07/05/2001 | US20010006851 Method of forming micro structure having surface roughness due to nano-sized surface features |
| 07/05/2001 | US20010006245 Manufacturing method of semiconductor integrated circuit device |
| 07/03/2001 | US6254721 Method and apparatus for processing samples |
| 07/03/2001 | US6254718 Combined CMP and plasma etching wafer flattening system |
| 06/28/2001 | US20010005119 Ion beam processing apparatus for processing work piece with ion beam being neutralized uniformly |
| 06/28/2001 | US20010005026 Conductive thin film, a capacitor using the same and a method of manufacturing. |
| 06/28/2001 | US20010004920 Provides shields for shielding the interior surface of the reactor pumping annulus from the plasma by preventing plasma from flowing through gap between wafer pedestal and the chamber sidewall without obstructing free flow of natural gas |
| 06/27/2001 | CN1300875A Plasma treating apparatus |
| 06/26/2001 | US6251241 Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield |
| 06/21/2001 | WO2001045152A1 Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen |
| 06/20/2001 | EP1108803A2 Method and apparatus for removing a coating from a passage hole in a metal substrate |
| 06/19/2001 | US6248252 Method of fabricating sub-micron metal lines |
| 06/19/2001 | US6248250 RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
| 06/14/2001 | US20010003272 Method for improving the rate of a plasma enhanced vacuum treatment |
| 06/14/2001 | US20010003271 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
| 06/13/2001 | CN1067177C 静电式夹盘 Electrostatic chuck |
| 06/12/2001 | US6245190 Plasma processing system and plasma processing method |
| 06/05/2001 | US6242347 Method for cleaning a process chamber |
| 06/05/2001 | US6242107 Methods for etching an aluminum-containing layer |
| 05/31/2001 | US20010002336 Local etching the wafer while maintaining a distance between a plasma discharge location and the wafer surface at a predetermined value by using the halogen gas fed inside alumina discharge tube to produce activated etching gas |
| 05/30/2001 | CN1297579A Process for copper etch back |
| 05/29/2001 | US6239036 Apparatus and method for plasma etching |
| 05/29/2001 | US6238587 Method for treating articles with a plasma jet |
| 05/29/2001 | US6238582 Reactive ion beam etching method and a thin film head fabricated using the method |
| 05/29/2001 | US6238512 Plasma generation apparatus |
| 05/24/2001 | US20010001732 Masking a silicon oxide(SiO2) layer on a polysilicon (Si) layer, the SiO2 and Si layer are respectively etched such as with tetrafluoromethane and hydrogen bromide and oxygen, etching fluorocarbon residue such as with chlorine gas |
| 05/22/2001 | US6235171 Vacuum film forming/processing apparatus and method |
| 05/22/2001 | US6235146 Vacuum treatment system and its stage |
| 05/17/2001 | US20010001185 Plasma processing apparatus and method of cleaning the apparatus |
| 05/16/2001 | EP1100119A1 Plasma processing method |
| 05/16/2001 | EP1100115A1 Device and method for plasma processing |
| 05/15/2001 | US6232233 Methods for performing planarization and recess etches and apparatus therefor |
| 05/15/2001 | US6231777 Surface treatment method and system |
| 05/15/2001 | US6231774 Plasma processing method |
| 05/15/2001 | US6231727 Using a vacuum; applying alternating current |
| 05/09/2001 | EP1097257A1 Methods for etching an aluminum-containing layer |
| 05/09/2001 | EP0802988B1 Method of forming diamond-like carbon film (dlc) |
| 05/08/2001 | US6228210 Surface wave coupled plasma etching apparatus |
| 05/01/2001 | US6225233 Semiconductor device manufacturing machine and method for manufacturing a semiconductor device by using THE same manufacturing machine |
| 05/01/2001 | US6225202 Selective etching of unreacted nickel after salicidation |
| 05/01/2001 | US6224677 Gas recovery unit utilizing dual use of gas |
| 04/26/2001 | WO2000058953A3 Reactive ion beam etching method and a thin film head fabricated using the method |
| 04/24/2001 | US6221782 Adjusting DC bias voltage in plasma chamber |
| 04/19/2001 | WO2001027987A1 Dry etching gas |
| 04/17/2001 | US6218196 Etching apparatus, etching method, manufacturing method of a semiconductor device, and semiconductor device |
| 04/17/2001 | US6217785 Scavenger for fluorine in the electromagnetically coupled planar plasma apparatus improves the etching of oxides with fluorohydrocarbon etchants with respect to the selectivity of etching of the oxide, gives improved anisotropy |
| 04/17/2001 | US6217703 Plasma processing apparatus |
| 04/17/2001 | US6217661 Plasma processing apparatus and method |
| 04/11/2001 | EP1090891A1 Method of manufacturing metal foil/ceramics joining material and metal foil laminated ceramic substrate |
| 04/10/2001 | US6215188 Low temperature aluminum reflow for multilevel metallization |
| 04/10/2001 | US6214725 Etching first film of stacked film with first etching gas including chlorine, etching second film with compound gas containing chlorine atom mixed with additive gas to improve corrosion resistance of aluminum-copper alloy film |
| 04/10/2001 | US6214720 Plasma process enhancement through reduction of gaseous contaminants |
| 04/10/2001 | US6214161 Method and apparatus for anisotropic etching of substrates |
| 04/05/2001 | WO2001024248A1 Hydrocarbon gases for anisotropic etching of metal-containing layers |