Patents for C23F 4 - Processes for removing metallic material from surfaces, not provided for in group or (4,769)
05/2003
05/15/2003WO2002101113A9 Method and device for treating a substrate
05/14/2003EP0748260B1 Ion beam process for deposition of highly abrasion-resistant coatings
05/14/2003CN1108630C Method for manufacturing semiconductor device having metal silicide film
05/13/2003US6562186 Apparatus for plasma processing
05/08/2003WO2003038153A1 Process for low temperature, dry etching, and dry planarization of copper
05/08/2003WO2003003404A3 Process chamber components having textured internal surfaces and method of manufacture
05/08/2003US20030086840 To apply plasma processing on a substrate such as a semiconductor
05/08/2003US20030085197 Etching method and apparatus
05/07/2003EP1307607A1 Method and device for plasma treatment of moving metal substrates
05/06/2003US6558507 Plasma processing apparatus
05/01/2003WO2003036704A1 Method and apparatus for the etching of photomask substrates using pulsed plasma
05/01/2003US20030080091 Method of processing a sample surface having a masking material and an anti-reflective film using a plasma
04/2003
04/29/2003US6554952 Method and apparatus for etching a gold metal layer using a titanium hardmask
04/29/2003US6554205 Gas polishing method, gas polishing nozzle and polishing apparatus
04/24/2003WO2003034463A2 Tunable multi-zone gas injection system
04/24/2003US20030077856 Semiconductor device manufacturing method
04/22/2003US6551447 Inductive plasma reactor
04/17/2003WO2003032434A1 Plasma production device and method and rf driver circuit
04/17/2003WO2002025697A3 Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto
04/17/2003US20030070620 Tunable multi-zone gas injection system
04/17/2003CA2463528A1 Plasma production device and method and rf driver circuit
04/15/2003US6548414 Method of plasma etching thin films of difficult to dry etch materials
04/15/2003US6547978 Method of heating a semiconductor substrate
04/10/2003WO2003029521A1 Method for removing at least one area of a layer of a component consisting of metal or a metal compound
04/09/2003EP1300875A1 Plasma processing device
04/09/2003EP1299904A2 Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
04/08/2003US6544894 Method of producing chromium mask
04/03/2003US20030064590 Method of plasma etching platinum
04/02/2003EP1298230A1 Process for removing corrosion products from metallic parts
04/01/2003US6541380 Plasma etching process for metals and metal oxides, including metals and metal oxides inert to oxidation
04/01/2003US6540930 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
03/2003
03/27/2003WO2002101113B1 Method and device for treating a substrate
03/27/2003US20030060048 Chemically enhanced focused ion beam micro-machining of copper
03/27/2003US20030059720 Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
03/27/2003US20030057182 Window for allowing end point of etching process to be detected and etching device comprising the same
03/26/2003EP1296353A2 Apparatus for surface modification of polymer, metal and ceramic materials using ion beam
03/26/2003CN1405857A Plasma etching device using plasma confining device
03/25/2003US6538387 Substrate electrode plasma generator and substance/material processing method
03/25/2003US6537462 Ruthenium and ruthenium dioxide removal method and material
03/25/2003US6537460 Method for detecting an end point of etching in a plasma-enhanced etching process
03/25/2003US6537417 Apparatus for processing samples
03/25/2003US6537415 Apparatus for processing samples
03/20/2003US20030052079 Etching of a specimen, such as a laminated film containing nickel iron alloy, at a high rate and temperature
03/18/2003US6534416 Control of patterned etching in semiconductor features
03/18/2003US6533534 Manufacturing flat active display screens by increased rate of plasma enhanced chemical vapor deposition method and thereby lowering for coating treatment exposure to ion impact
03/18/2003US6532796 Method of substrate temperature control and method of assessing substrate temperature controllability
03/13/2003WO2003021659A1 Methods and apparatus for etching metal layers on substrates
03/13/2003US20030049937 Apparatus and method for surface treatment to substrate
03/13/2003US20030049934 Methods and apparatus for etching metal layers on substrates
03/12/2003EP1290495A2 A method and apparatus for etching metal layers on substrates
03/12/2003CN1102962C Laser shock peening using low energy laser
03/06/2003WO2003019639A1 Treating device using treating gas, and method of operating the same
03/06/2003WO2003019629A2 Process for charged particle beam micro-machining of copper
03/06/2003WO2002046483A3 Silver stain removal from dna detection chips by cyanide etching or sonication
03/06/2003US20030045113 Fabrication method of semiconductor integrated circuit device
03/05/2003EP1289003A1 Plasma processing apparatus
02/2003
02/27/2003US20030038688 Device and method for coupling two circuit components which have different impedances
02/27/2003US20030038113 Process for charged particle beam micro-machining of copper
02/26/2003CN1399316A Post-treatment process of dry etched metal film and integral etching and photoresist-eliminating system
02/26/2003CN1398782A One-dimensional hydrogen-storing carbon nano-material etched via microwave plasma and its prepn process
02/25/2003US6524432 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
02/20/2003US20030036282 Etching end point judging device
02/13/2003US20030030144 Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
02/11/2003US6517670 Etching and cleaning apparatus
02/06/2003US20030026917 Process chamber components having textured internal surfaces and method of manufacture
02/06/2003US20030024646 Plasma etching apparatus and plasma etching method
02/04/2003US6514866 Chemically enhanced focused ion beam micro-machining of copper
02/04/2003US6514582 Quartz glass member for use in dry etching and dry etching system equipped with the same
02/04/2003US6514375 Dry etching endpoint detection system
02/04/2003US6513452 Adjusting DC bias voltage in plasma chamber
01/2003
01/30/2003US20030022494 Plasma etching process for metals and metal oxides relates inert to oxidation
01/30/2003US20030021910 Plasma vapor deposition using microwaves
01/30/2003US20030019841 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
01/29/2003EP0880694B1 Ultrasonic sputtering target testing method
01/28/2003US6511584 Configuration for coating a substrate by means of a sputtering device
01/23/2003US20030015287 Inner wall protection member for chamber and plasma procressing apparatus
01/21/2003US6508913 Gas distribution apparatus for semiconductor processing
01/21/2003US6508199 Plasma processing apparatus
01/15/2003EP1274499A1 Apparatus and process for the abatement of semiconductor manufacturing effluents containing fluorine gas
01/14/2003US6506686 Plasma processing apparatus and plasma processing method
01/09/2003WO2003003404A2 Process chamber components having textured internal surfaces and method of manufacture
01/07/2003US6503367 Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma
01/07/2003US6503364 Plasma processing apparatus
01/02/2003US20030003757 Method of etching tungsten or tungsten nitride in semiconductor structures
01/02/2003US20030003374 Generating a plasma of a processing gas comprising carbon monoxide and a chlorine containing gas, and etching exposed portions of the metal layer of a metal photomask
01/02/2003US20030000646 Plasma reactor
12/2002
12/31/2002US6500314 Precise control and increased density range of the plasma
12/31/2002US6499492 Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning
12/26/2002US20020195422 Absorbing halogen gas onto exposed surface, removing , then etching/milling; semiconductors
12/19/2002WO2002101113A1 Method and device for treating a substrate
12/19/2002WO2002086932B1 Magnetic mirror plasma source
12/19/2002US20020190657 Wafer area pressure control for plasma confinement
12/18/2002EP1267396A2 Magnetically patterning conductors
12/18/2002EP1046186B1 Plasma treatment for producing electron emitters
12/18/2002CN1096313C Method and device for selective removal of material by irradiation
12/12/2002WO2002086937B1 Dipole ion source
12/12/2002DE10126986A1 Treating, e.g. etching, a substrate in an electric arc vaporizing device comprises adjusting the metal ion density per target by partially covering the target
12/10/2002US6492774 Wafer area pressure control for plasma confinement
12/10/2002US6492280 Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls
12/10/2002US6492068 Etching method for production of semiconductor devices
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