Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
05/2005
05/05/2005US20050093022 Spacer chalcogenide memory device
05/05/2005US20050092983 Sidewall formation for high density polymer memory element array
05/04/2005CN1613157A Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same
05/03/2005US6888745 Nonvolatile memory device
05/03/2005US6888155 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
05/03/2005US6887523 Method for metal oxide thin film deposition via MOCVD
04/2005
04/27/2005CN1610950A Carbon-containing interfacial layer for phase-change memory
04/26/2005US6885602 Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor
04/26/2005US6885021 Adhesion layer for a polymer memory device and method therefor
04/21/2005DE10297692T5 Haftmaterial für programmierbare Vorrichtung Pressure sensitive programmable device
04/19/2005US6881623 Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
04/19/2005US6881603 Phase change material memory device
04/19/2005US6881466 Information recording medium and method for producing the same
04/14/2005WO2005034244A2 Current controlling device
04/14/2005WO2004100217B1 Field effect chalcogenide devices
04/14/2005US20050079727 One mask PT/PCMO/PT stack etching process for RRAM applications
04/14/2005US20050077515 Programmable resistance memory element with threshold switching material
04/13/2005EP1523003A1 Ultra-high density data storage device using phase change diode memory cells and methods of fabrication thereof
04/12/2005US6878618 Compositionally modified resistive electrode
04/12/2005US6878569 Agglomeration elimination for metal sputter deposition of chalcogenides
04/07/2005US20050074933 Phase change material memory device
03/2005
03/31/2005WO2005029585A1 Phase-change film for semiconductor non-volatile memory and sputtering target for forming such phase-change film
03/31/2005US20050068804 Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range
03/31/2005US20050067612 Current controlling device
03/31/2005US20050067611 Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof
03/30/2005CN1602550A Nonvolatile memory
03/29/2005US6873538 Programmable conductor random access memory and a method for writing thereto
03/29/2005US6872963 Programmable resistance memory element with layered memory material
03/24/2005WO2005027134A2 Multiple bit chalcogenide storage device
03/24/2005US20050062132 Electrically programmable memory element
03/24/2005US20050062087 Chalcogenide phase-change non-volatile memory, memory device and method for fabricating the same
03/24/2005US20050062074 Spacer chalcogenide memory method
03/24/2005CA2538142A1 Multiple bit chalcogenide storage device
03/23/2005CN1599090A Chalcogenide phase change type nonvolatility memory body and its memory element manufacturing method
03/23/2005CN1599068A Phase transformation micro, nano electronic memory device and manufacturing method
03/22/2005US6869883 Forming phase change memories
03/22/2005US6869841 Carbon-containing interfacial layer for phase-change memory
03/17/2005WO2005024839A1 Storage location having an ionic conduction storage mechanism and method for the production thereof
03/17/2005US20050059187 Non-volatile memory structure
03/17/2005US20050058941 Information recording medium and method for manufacturing the same
03/17/2005US20050056910 Non-volatile memory structure
03/16/2005EP1439583A9 Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
03/15/2005US6867996 Single-polarity programmable resistance-variable memory element
03/15/2005US6867425 Lateral phase change memory and method therefor
03/15/2005US6867114 Methods to form a memory cell with metal-rich metal chalcogenide
03/15/2005US6867064 Method to alter chalcogenide glass for improved switching characteristics
03/10/2005US20050054207 Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
03/10/2005US20050054119 Buffered-layer memory cell
03/10/2005US20050052915 Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
03/10/2005US20050051901 Memory device with discrete layers of phase change memory material
03/08/2005US6864522 Memory device
03/08/2005US6864521 Method to control silver concentration in a resistance variable memory element
03/08/2005US6864503 Spacer chalcogenide memory method and device
03/08/2005US6864500 Programmable conductor memory cell structure
03/08/2005US6864111 Column-row addressable electric microswitch arrays and sensor matrices employing them
03/03/2005US20050045919 Semiconductor device
03/03/2005US20050045915 Phase changeable layers including protruding portions in electrodes thereof and methods of forming same
03/03/2005US20050045864 Non-volatile memory
03/02/2005EP1511085A2 Asymmetric crystalline structure memory cell
03/02/2005CN1588664A Characterization emthod for convertable phase change material electric property
03/02/2005CN1588637A Process for preparing nano electronic phase change storage
03/02/2005CN1588613A Process for preparing nano phase change storage device unit
03/02/2005CN1191635C Microelectronic device for storing information and method thereof
03/01/2005US6861267 Reducing shunts in memories with phase-change material
02/2005
02/24/2005WO2005017906A1 Multilayered phase change memory
02/24/2005US20050042862 Small electrode for chalcogenide memories
02/24/2005US20050042799 Pore structure for programmable device
02/24/2005US20050041464 Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor
02/24/2005US20050040482 EPIR device and semiconductor devices utilizing the same
02/24/2005US20050040455 Non-volatile multi-stable memory device and methods of making and using the same
02/24/2005US20050040136 Anisotropically etching a chalconideof germanium tellerium sulfide with a chlorine-containing gas in a vacuum chamber at controllable rates with selectivity to both the etch mask and the etch stop layer; phototlithography with reduced nonvolatile etch byproducts; semiconductors; computers
02/22/2005US6859389 Phase change-type memory element and process for producing the same
02/22/2005US6859382 Memory array of a non-volatile ram
02/22/2005US6858482 Method of manufacture of programmable switching circuits and memory cells employing a glass layer
02/22/2005US6858465 Elimination of dendrite formation during metal/chalcogenide glass deposition
02/22/2005US6858277 Information recording medium and method for manufacturing the same
02/17/2005US20050037520 Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer
02/17/2005US20050035342 Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths, and a method of making same
02/16/2005EP1507297A2 Method for obtaining reversible resistance switches in a PCMO thin film deposited on a highly crystallized seed layer
02/16/2005EP1507288A2 High temperature annealing of spin coated Pr(1-x)Ca(x)MnO3 thin film for RRAM application
02/16/2005CN1581435A High temperature annealing of spin coated Pr(1-x)ca(x)Mno3 thin film for RRAM application
02/16/2005CN1581372A Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer
02/15/2005US6856002 Graded GexSe100-x concentration in PCRAM
02/10/2005US20050032374 Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells
02/10/2005US20050032319 Controlling the location of conduction breakdown in phase change memories
02/10/2005US20050032307 Damascene phase change memory
02/10/2005US20050032269 Forming planarized semiconductor structures
02/10/2005US20050030814 Data read circuit for use in a semiconductor memory and a method thereof
02/10/2005US20050030800 Multilayered phase change memory
02/10/2005US20050029587 Method and apparatus for forming an integrated circuit electrode having a reduced contact area
02/10/2005US20050029504 Reducing parasitic conductive paths in phase change memories
02/10/2005US20050029503 Lateral phase change memory
02/10/2005US20050029502 Processing phase change material to improve programming speed
02/09/2005EP1504334A1 Methods of computing with digital multistate phase change materials
02/09/2005CN1578848A Integrated circuit device and fabrication using metal-doped chalcogenide materials
02/09/2005CN1577548A Information recording medium and method for producing the same
02/03/2005WO2005011011A1 Etching method for making chalcogenide memory elements
02/03/2005WO2004100217A3 Field effect chalcogenide devices
02/03/2005US20050026433 Integrated circuit device and fabrication using metal-doped chalcogenide materials
02/03/2005US20050024933 Process for manufacturing device having selector transistors for storage elements and memory device fabricated thereby
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