Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
12/2005
12/22/2005DE102004026111A1 Solid electrolyte memory cell production method for semiconductor memories involves doping solid electrolyte material with dopant and then irradiating cell with suitable ions or ion beam either partly or completely
12/22/2005DE102004026109A1 Semiconductor memory includes tellurium-based, fast-growth phase-change material with specified linear crystallization velocity and cubic structure
12/22/2005DE102004026002A1 Semiconductor assembly for non-volatile memories has solid electrolyte memory cell structure parallel to main surface of semiconductor substrate and has reactive electrode and inert electrode separated in single-stage manner
12/21/2005EP1607232A1 Phase variation recording material and information recording medium
12/20/2005CA2269857C Memory element with energy control mechanism
12/15/2005US20050275433 Low-current and high-speed phase-change memory devices and methods of driving the same
12/15/2005US20050275106 Electronic isolation device
12/15/2005US20050275064 System and method for forming a bipolar switching PCMO film
12/15/2005US20050275003 Crosspoint structure semiconductor memory device, and manufacturing method thereof
12/15/2005US20050274942 Nanoscale programmable structures and methods of forming and using same
12/13/2005US6974965 Agglomeration elimination for metal sputter deposition of chalcogenides
12/08/2005US20050270826 Semiconductor memory device and method for producing a semiconductor memory device
12/08/2005US20050270821 Semiconductor device and manufacturing method for same
12/08/2005US20050269667 Process for manufacturing integrated resistor and phase-change memory element including this resistor
12/08/2005US20050269566 Programmable structure, an array including the structure, and methods of forming the same
12/08/2005DE102004022604A1 Sublithographic contact structure is formed by producing primary and secondary contacts and providing sublithographic dimensions by chemical reaction
12/07/2005EP1196924A4 Method of programming phase-change memory element
12/07/2005CN1706046A Switching element, switching element driving method, rewritable logic integrated circuit and memory element
12/06/2005US6972430 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
12/06/2005US6972429 Chalcogenide random access memory and method of fabricating the same
12/06/2005US6972428 Programmable resistance memory element
12/06/2005US6972427 Switching device for reconfigurable interconnect and method for making the same
12/06/2005US6972239 Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin films
12/06/2005US6972238 Oxygen content system and method for controlling memory resistance properties
12/01/2005US20050266686 Method of substrate surface treatment for RRAM thin film deposition
12/01/2005US20050266635 Graded GexSe100-x concentration in PCRAM
12/01/2005US20050265215 Phase-change recording material used for information recording medium and informatin recording medium employing it
12/01/2005US20050263823 Phase-change memory device having a barrier layer and manufacturing method
12/01/2005DE102005018344A1 Schaltvorrichtung für rekonfigurierbare Zwischenverbindung und Verfahren zum Herstellen derselben Switching device for reconfigurable interconnect and method of making same
11/2005
11/30/2005CN1702883A Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
11/29/2005US6969869 Programmable resistance memory element with indirect heating
11/29/2005US6969867 Field effect chalcogenide devices
11/29/2005US6969866 Electrically programmable memory element with improved contacts
11/29/2005US6969301 Filling plugs through chemical mechanical polish
11/24/2005WO2005112118A1 Semiconductor memory
11/24/2005US20050260857 Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma
11/24/2005US20050260839 Non-volatile resistance switching memory
11/24/2005DE102005003675A1 CBRAM memory cell comprises a metallic material incorporated in or deposited on a matrix-host material, and a memory cell having a memory switching mechanism based on the variation of the metallic material
11/22/2005US6967865 Low-current and high-speed phase-change memory devices and methods of driving the same
11/22/2005US6967344 Multi-terminal chalcogenide switching devices
11/22/2005US6967118 Process for creating Metal-Insulator-Metal devices
11/17/2005US20050255665 Manufacturing method of a contact structure and phase change memory cell with elimination of double contacts
11/17/2005DE102004020297A1 Verfahren zur Herstellung resistiv schaltender Speicherbauelemente A process for producing resistive switching memory devices
11/17/2005DE102004019862A1 Sub-lithographic contact structure used in a memory cell in a semiconductor component comprises an insulating layer with a through hole arranged between contact electrodes, and a resistance changing layer
11/17/2005DE102004018715B3 Speicherzelle zum Speichern einer Information, Speicherschaltung sowie Verfahren zum Herstellen einer Speicherzelle Memory cell for storing information, memory circuit and method for fabricating a memory cell
11/17/2005DE102004014487A1 Speicherbauelement mit in isolierendes Material eingebettetem, aktiven Material Memory device having embedded in insulating material, active material
11/16/2005CN1698204A Non-volatile memory and method for manufacturing same
11/16/2005CN1698203A Memory element and storage device using this
11/16/2005CN1697195A Memory element and memory device
11/16/2005CN1697081A Memory device
11/15/2005US6964879 Method of fabricating a contact
11/10/2005WO2005106955A1 Storage element
11/10/2005WO2004081617B1 Chalcogenide glass constant current device, and its method of fabrication and operation
11/10/2005US20050250281 Method for manufacturing resistively switching memory devices
11/10/2005US20050247922 Phase random access memory with high density
11/10/2005US20050247921 Memory device using multi-layer with a graded resistance change
11/08/2005US6963893 Methods of factoring and modular arithmetic
11/03/2005US20050245039 PCMO thin film with resistance random access memory (RRAM) characteristics
11/03/2005US20050243633 Memory circuit and method for providing an item of information for a prescribed period of time
11/03/2005US20050243630 Memory cell with an asymmetrical area
11/03/2005US20050243596 Memory cell for storing an information item, memory circuit and method for producing a memory cell
11/03/2005US20050242338 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
11/03/2005US20050242337 Switching device for reconfigurable interconnect and method for making the same
11/03/2005DE10297772T5 Modifzierter Kontakt für Programmierbare Bauelemente Modifzierter contact for programmable devices
11/02/2005CN1691334A Memory device using multi-layer with a graded resistance change
11/01/2005US6961258 Pore structure for programmable device
10/2005
10/27/2005WO2005101539A1 Layered resistance variable memory device and method of fabrication
10/27/2005WO2005101420A1 Thin film memory device having a variable resistance
10/27/2005US20050239262 PCMO thin film with memory resistance properties
10/27/2005US20050237834 Memory device and method of making the same
10/27/2005US20050236691 Semiconductor device and manufacturing method for the same
10/27/2005DE102004014965A1 Memory cell production method for a non-volatile memory cell has a solid-state electrolyte area as a memory element activated by building in a fundamental rule
10/26/2005CN1689172A Electric device comprising phase change material
10/20/2005WO2005098958A1 Method for producing a pcm memory element and corresponding pcm memory element
10/19/2005EP1587137A1 Deposition process for non-volatile resistance switching memory
10/19/2005EP1171920A4 Electrically programmable memory element with improved contacts
10/18/2005US6955992 One mask PT/PCMO/PT stack etching process for RRAM applications
10/18/2005US6955940 Method of forming chalcogenide comprising devices
10/13/2005WO2005096380A1 Semiconductor device and driving method of the same
10/13/2005WO2005045935A3 Sidewall formation for high density polymer memory element array
10/13/2005US20050227496 Phase change memory elements and methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contact
10/13/2005US20050227177 Insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer
10/13/2005US20050226067 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
10/13/2005US20050226062 Memory element and storage device using this
10/13/2005US20050226036 Memory device and storage apparatus
10/13/2005US20050226029 Programmable microelectronic devices and methods of forming and programming same
10/11/2005US6953720 Methods for forming chalcogenide glass-based memory elements
10/06/2005WO2005093839A2 Electric device comprising phase change material
10/06/2005US20050219901 Non-volatile memory structure
10/05/2005CN1677525A Information recording medium and method for manufacturing the same
09/2005
09/29/2005WO2004081617A3 Chalcogenide glass constant current device, and its method of fabrication and operation
09/29/2005US20050215009 Methods of forming phase-change memory devices
09/29/2005US20050213368 Memory array of a non-volatile RAM
09/29/2005US20050212037 Semiconductor memory cell, method for fabricating it and semiconductor memory device
09/29/2005US20050212024 Memory device with an active material embedded in an insulating material
09/29/2005US20050212022 Memory cell having an electric field programmable storage element, and method of operating same
09/29/2005DE102004011430A1 Halbleiterspeicherzelle, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung A semiconductor memory cell, process for their preparation and the semiconductor memory device
09/28/2005EP1580762A2 Memory cell having an electric field programmable storage element, and method of operating same
09/28/2005EP1579266A2 Thin planar switches and their applications
09/27/2005US6950331 Organic bistable device and organic memory cells
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