Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424)
08/2003
08/07/2003US20030148545 Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory
08/07/2003US20030146469 Semiconductor memory cell and method of forming same
08/07/2003US20030146452 Using selective deposition to form phase-change memory cells
08/07/2003US20030146427 Intermetallic of germanium, selenium diffused with silver
08/06/2003CN1117401C Two-terminal type non-linear element manufacturing method thereofand liquid crystal display panel
07/2003
07/31/2003US20030143782 Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
07/30/2003EP1331675A1 Integrated resistive element, phase-change memory element including said resistive element, and method of manufacture thereof
07/29/2003US6601219 Electronic apparatus and manufacturing method for an electronic apparatus
07/24/2003US20030138669 Information recording medium and method for producing the same
07/24/2003US20030137869 Programmable microelectronic device, structure, and system and method of forming the same
07/23/2003EP1329958A1 Electronic device having controllable conductance
07/17/2003US20030134136 Varying the infrared spectrum of a silicon dioxide thin film derived from a silsesquioxane resin comprising directing a beam of infrared radiation to a metal-film-metal device and monitoring the variation in current applied; switches; panes
07/10/2003US20030128919 Device integrated antenna for use in resonant and non-resonant modes and method
07/10/2003US20030127700 High speed electron tunneling device and applications
07/10/2003US20030127669 Controllable ovanic phase-change semiconductor memory device
07/10/2003US20030127664 Method for forming conductors in semiconductor devices
07/10/2003US20030127641 Method for fabricating a metal-oxide electron tunneling device for solar energy conversion
07/09/2003EP1326158A2 Second-layer phase change memory array on top of a logic device
07/09/2003CN1428775A Information recording medium and its mfg. method
07/08/2003US6589714 Providing a conductive material; forming a silylated photoresist sidewall spacer over portion; removing a portion of conductive material to form a raised portion; forming a programmable resistance material adjacent to raised portion
07/03/2003WO2003054887A1 A programmable conductor random access memory and a method for writing thereto
07/03/2003US20030122170 Adhesion layer for a polymer memory device and method therefor
07/03/2003US20030122166 Phase change material memory device
07/03/2003US20030122162 Method for forming conductors in semiconductor devices
07/03/2003US20030122156 Programmable resistance memory element and method for making same
07/02/2003EP1324326A1 Information recording medium and method for producing the same
07/02/2003EP0972284B1 Electric or electronic component and application as non volatile memory and device with surface acoustic waves
07/02/2003EP0894323B1 Multibit single cell memory having tapered contact
07/01/2003US6586761 Phase change material memory device
06/2003
06/26/2003WO2003052815A2 Electrode structure for use in an integrated circuit
06/26/2003US20030117831 Programmable conductor random access memory and a method for writing thereto
06/26/2003US20030116794 Elevated pore phase-change memory
06/19/2003WO2003050872A1 Nonvolatile memory
06/18/2003CN1424720A Information recording medium and production thereof
06/17/2003US6579760 Self-aligned, programmable phase change memory
06/11/2003EP1318552A1 Small area contact region, high efficiency phase change memory cell and fabrication method thereof
06/11/2003EP0888618B1 Second-layer phase change memory array on top of a logic device
06/05/2003US20030104685 Electrical and thermal contact for use in semiconductor devices and methods for fabricating the same
06/03/2003US6572974 Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
05/2003
05/30/2003WO2003044878A2 Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same
05/30/2003WO2003044802A2 Complementary bit pcram (programmable conductor ram) and method of operation
05/27/2003US6570224 Quantum-size electronic devices and operating conditions thereof
05/27/2003US6569705 Metal structure for a phase-change memory device
05/22/2003US20030096497 Electrode structure for use in an integrated circuit
05/22/2003US20030095426 Complementary bit PCRAM sense amplifier and method of operation
05/22/2003US20030094652 Modified contact for programmable devices
05/20/2003US6566700 Carbon-containing interfacial layer for phase-change memory
05/14/2003EP1310954A2 Method and system for storing and retrieving data
05/14/2003CN1417782A Additional energy source of memory equipment for atom splitting memory
05/13/2003US6563555 Anodic oxidation using ethylene glycol electrolyte in water solvent
05/13/2003US6563220 Method for forming conductors in semiconductor devices
05/13/2003US6563185 High speed electron tunneling device and applications
05/13/2003US6563164 Compositionally modified resistive electrode
05/13/2003US6563156 Memory elements and methods for making same
05/08/2003WO2003038831A1 Carbon-containing interfacial layer for phase-change memory
05/07/2003EP1307931A2 Memory element and method for production of a memory element
05/02/2003EP1306904A2 Controlled conduction device
05/01/2003WO2003036736A2 Tunable cantilever apparatus and method for making same
05/01/2003WO2003036735A2 Programmable surface control devices and method of making same
05/01/2003US20030082908 Phase change material memory device
05/01/2003US20030081532 Supplementary energy sources for atomic resolution storage memory devices
05/01/2003US20030080427 Multiple layer phase-change memory
05/01/2003CA2465277A1 Programmable surface control devices and method of making same
04/2003
04/24/2003US20030075778 Programmable resistance memory element and method for making same
04/23/2003EP0946975B1 A device and method for fabricating a small area of contact between electrodes
04/17/2003WO2003032392A2 Programmable microelectronic device, structure, and system, and method of forming the same
04/17/2003US20030073295 Carbon-containing interfacial layer for phase-change memory
04/17/2003US20030073262 Reducing leakage currents in memories with phase-change material
04/17/2003US20030072195 Semiconductor memory device and fabrication method
04/17/2003US20030071289 Multiple layer phase-change memory
04/17/2003US20030071255 Forming a trench using the tapered electrode as a mask for a self-aligned trench etch to electrically separate adjacent wordlines
04/15/2003US6548397 Electrical and thermal contact for use in semiconductor devices
04/10/2003WO2002084729A3 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring
04/10/2003US20030068862 Integrated circuit device and fabrication using metal-doped chalcogenide materials
04/10/2003US20030068861 Integrated circuit device and fabrication using metal-doped chalcogenide materials
04/08/2003US6545903 Self-aligned resistive plugs for forming memory cell with phase change material
04/08/2003US6545287 Mutlilayer; substrate, dielectric, passageway through dielectric and electrode deposit
04/03/2003WO2003028124A1 Electric device comprising solid electrolyte
03/2003
03/26/2003EP1296377A2 A method for fabricating a small area of contact between electrodes
03/20/2003WO2003023875A2 Phase change material memory device
03/20/2003US20030053350 Memory device
03/20/2003US20030052351 Reducing shunts in memories with phase-change material
03/20/2003US20030052330 Providing a first electrode layer and an overlying chalcogenide material; plating a conductive metal onto the chalcogenide to form diffusion layer, diffusing metal ions into chalcogenide to form resistance variable material
03/19/2003EP1044452B1 Programmable sub-surface aggregating metallization structure and method of making same
03/18/2003US6534784 Metal-oxide electron tunneling device for solar energy conversion
03/18/2003US6534780 Semiconductors
03/18/2003US6534368 Integrated circuit memory cell having a small active area and method of forming same
03/18/2003US6534326 Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin films
03/13/2003WO2003021693A2 Elevated pore phase-change memory
03/13/2003WO2003021692A2 Mutliple layer phase-change memory
03/13/2003WO2003020998A2 Integrated circuit device and fabrication using metal-doped chalcogenide materials
03/13/2003US20030049912 Method of forming chalcogenide comprsing devices and method of forming a programmable memory cell of memory circuitry
03/13/2003US20030047773 Agglomeration elimination for metal sputter deposition of chalcogenides
03/13/2003US20030047772 Agglomeration elimination for metal sputter deposition of chalcogenides
03/13/2003US20030047765 Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
03/13/2003US20030047762 Phase change material memory device
03/13/2003US20030047727 Defining a pore of a phase-change memory; selectively depositing a lower electrode in pore
03/11/2003US6531391 Method of fabricating a conductive path in a semiconductor device
03/06/2003WO2003019691A2 Manufacturing of non-volatile resistance variable devices and programmable memory cells
03/06/2003US20030045054 Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device
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