| Patents for H01L 45 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (8,424) |
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| 03/29/2000 | CN1050937C Electrically erasable memory elements characterized by reduced current and improved thermal stability |
| 03/23/2000 | WO2000015882A2 Method for switching the properties of perovskite materials |
| 03/16/2000 | WO1999067798A3 Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates |
| 02/29/2000 | US6031287 Contact structure and memory element incorporating the same |
| 01/19/2000 | EP0972284A1 Electric or electronic component and application as non volatile memory and device with surface acoustic waves |
| 01/18/2000 | US6015977 Integrated circuit memory cell having a small active area and method of forming same |
| 01/05/2000 | EP0968536A1 Semiconductor memory devices |
| 12/29/1999 | WO1999067798A2 Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates |
| 12/14/1999 | US6002140 Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
| 11/30/1999 | US5994748 Two-terminal nonlinear device, method for manufacturing the same, and liquid-crystal display panel |
| 11/09/1999 | US5981316 Positioning atoms at preferential locations according periodic potentials on the platform to form chains of atoms where chain behaves as one of a conductor, semiconductor or insulator based on atomic spacing between atoms of each chain |
| 10/28/1999 | WO1999054128A1 Memory element with memory material comprising phase-change material and dielectric material |
| 10/28/1999 | CA2324927A1 Memory element with memory material comprising phase-change material and dielectric material |
| 10/26/1999 | US5973335 Semiconductor memory devices with amorphous silicon alloy |
| 10/13/1999 | EP0843901A4 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 10/06/1999 | EP0947005A1 Composite memory material comprising a mixture of phase-change memory material and dielectric material |
| 10/06/1999 | EP0946975A2 A method for fabricating a small area of contact between electrodes |
| 09/14/1999 | US5952671 Small electrode for a chalcogenide switching device and method for fabricating same |
| 09/08/1999 | EP0939957A2 Programmable metallization cell structure and method of making same |
| 09/01/1999 | EP0938731A1 Memory element with energy control mechanism |
| 08/26/1999 | WO1999028914A3 Programmable sub-surface aggregating metallization structure and method of making same |
| 08/25/1999 | EP0858614A4 Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels |
| 08/25/1999 | CN1226990A Programmable metallization cell and method of making |
| 08/24/1999 | US5942790 Charge effect transistor and a method for manufacturing the same |
| 08/11/1999 | EP0786151A4 Liquid crystal display with threshold switching device |
| 08/05/1999 | WO1999039394A1 X-y addressable electric microswitch arrays and sensor matrices employing them |
| 08/05/1999 | CA2319548A1 X-y addressable electric microswitch arrays and sensor matrices employing them |
| 08/03/1999 | US5933365 Memory element with energy control mechanism |
| 07/07/1999 | CN1044046C Electrically erasable phase change memory |
| 06/22/1999 | US5914893 Programmable metallization cell structure and method of making same |
| 06/22/1999 | CA2158959C Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 06/16/1999 | EP0749638B1 Semiconductor memory devices and methods of producing such |
| 06/10/1999 | WO1999028914A2 Programmable sub-surface aggregating metallization structure and method of making same |
| 05/19/1999 | EP0894323A4 Multibit single cell memory having tapered contact |
| 04/29/1999 | WO1999021235A1 Semiconductor memory devices |
| 04/20/1999 | US5896312 Programmable metallization cell structure and method of making same |
| 03/16/1999 | US5883683 Nonlinear device |
| 03/16/1999 | US5883419 Ultra-thin MO-C film transistor |
| 03/10/1999 | EP0901169A1 Controlled conduction device |
| 03/09/1999 | US5879960 Manufacturing method of thin film diode for liquid crystal display device |
| 03/09/1999 | US5879955 Applying layer of first material to substrate, removing portion of layer, applying fixed layer of second material, applying second layer of first material, removing fixed layer to define pores |
| 02/11/1999 | WO1999007027A1 Thin-film two-terminal elements, method of production thereof, and liquid crystal display |
| 02/03/1999 | EP0894323A1 Multibit single cell memory having tapered contact |
| 02/02/1999 | US5867234 Manufacturing method of mim nonlinear device, mim nonlinear device, and liquid crystal display device |
| 01/19/1999 | US5861672 Nonlinear resistance element, manufacturing fabrication method thereof, and liquid crystal display device |
| 01/07/1999 | EP0888618A1 Second-layer phase change memory array on top of a logic device |
| 12/23/1998 | WO1998058385A1 Memory element with energy control mechanism |
| 12/23/1998 | CN1041364C Tannel diode and storing element with such tannel diode |
| 10/22/1998 | WO1998036446A3 A method for fabricating a small area of contact between electrodes |
| 10/21/1998 | EP0793861B1 Tunnel-effect component and method of manufacturing thereof |
| 10/20/1998 | US5825046 Composite memory material comprising a mixture of phase-change memory material and dielectric material |
| 10/14/1998 | EP0870215A1 Active-matrix lcd and the like, and their manufacture |
| 10/08/1998 | WO1998044498A1 Electric or electronic component and application as non volatile memory and device with surface acoustic waves |
| 09/29/1998 | US5814527 Semiconductor fabrication for computers with ultra-small pores |
| 08/20/1998 | WO1998036446A2 A method for fabricating a small area of contact between electrodes |
| 08/19/1998 | EP0858614A1 Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels |
| 08/18/1998 | US5795458 Manufacturing method of thin film diode for liquid crystal display device |
| 08/04/1998 | US5789277 Method of making chalogenide memory device |
| 07/15/1998 | CN1187631A Two-terminal type non-linear element, manufacturing method thereof and liquid crystal display panel |
| 07/14/1998 | US5781256 Nonlinear resistance element and fabrication method thereof in which tungsten atoms are distributed continuously within the insulating film |
| 06/30/1998 | US5773933 Broadband traveling wave amplifier with an input stripline cathode and an output stripline anode |
| 06/10/1998 | EP0846343A1 Electrically erasable memory elements characterized by reduced current and improved thermal stability |
| 06/02/1998 | US5761115 Programmable metallization cell structure and method of making same |
| 05/27/1998 | EP0843901A1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 05/26/1998 | US5757446 Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels |
| 05/07/1998 | WO1998019350A1 Composite memory material comprising a mixture of phase-change memory material and dielectric material |
| 05/07/1998 | CA2269856A1 Composite memory material comprising a mixture of phase-change memory material and dielectric material |
| 04/29/1998 | EP0791229A4 Atomic chain circuit network and method |
| 04/09/1998 | WO1998014823A1 Active-matrix lcd and the like, and their manufacture |
| 03/31/1998 | US5734452 Two-terminal non-linear resistive device and a method for producing the same in which nickel or iron is an impurity in the zinc sulfide layer |
| 03/31/1998 | US5733661 Metal oxide containing ions of an organic carboxylic acid salt and/or ions of an inorganic oxoacid salt |
| 02/05/1998 | WO1997048032A3 Programmable metallization cell and method of making |
| 02/03/1998 | US5714768 Second-layer phase change memory array on top of a logic device |
| 12/18/1997 | WO1997048032A2 Programmable metallization cell and method of making |
| 12/02/1997 | US5694146 Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels |
| 11/11/1997 | US5687112 Multibit single cell memory element having tapered contact |
| 10/30/1997 | WO1997040499A1 Multibit single cell memory having tapered contact |
| 10/28/1997 | US5682041 Alternating an electroconductive compound and dielectric compound |
| 09/10/1997 | EP0793861A1 Seco process |
| 09/09/1997 | US5665978 Nonlinear element and bistable memory device |
| 09/02/1997 | US5663020 Display apparatus having a two-terminal device including a zinc sulfide layer and a method for producing the same |
| 08/27/1997 | EP0791229A1 Atomic chain circuit network and method |
| 08/05/1997 | US5654207 Multilayer; electrode, thin film of tantalum doped with nitrogen; anodized oxide film; another electrode |
| 07/30/1997 | EP0786151A1 Liquid crystal display with threshold switching device |
| 07/30/1997 | EP0694214A4 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 07/08/1997 | US5646559 Single-electron tunnelling logic device |
| 06/24/1997 | US5642212 Switching device includes two terminal element having first and second electrodes; improved quality, contrast |
| 05/14/1997 | CN1149932A Method for producing metal-insulator-metal nonlinear element, metal-insulator-metal nonlinear element and liquid crystal display device |
| 05/09/1997 | WO1997016766A1 Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels |
| 05/01/1997 | WO1997015954A1 Second-layer phase change memory array on top of a logic device |
| 04/16/1997 | EP0768722A1 Method of making an electronic switching element |
| 03/19/1997 | EP0763861A1 Nonlinear mim device, production thereof and liquid crystal display device |
| 02/27/1997 | WO1997007550A1 Electrically erasable memory elements characterized by reduced current and improved thermal stability |
| 02/13/1997 | WO1997005665A1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 01/21/1997 | US5596522 Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
| 01/21/1997 | US5596432 Liquid crystal display having illuminated nonlinear resistance elements |
| 12/31/1996 | USRE35416 Active matrix liquid crystal display device and method for production thereof |
| 12/27/1996 | EP0749638A1 Semiconductor memory devices and methods of producing such |
| 12/03/1996 | US5581091 Anodizing a metal substrate in acid bath |
| 11/27/1996 | EP0744777A1 Nonlinear element and bistable memory device |